Searcharxiv⌕ Search

arXiv subjects

Kentaro Nomura

Publications and source records attributed to Kentaro Nomura.

At least 109 records · Page 6Linked to original sources

Disorder-induced metal-insulator transitions in three-dimensional topological insulators and superconductors

We discuss the effects of disorder in time-reversal invariant topological insulators and superconductors in three spatial dimensions. For three-dimensional topological insulator in symplectic (AII) symmetry class, the phase diagram in the presence of disorder and a mass term, which drives a transition between trivial and topological insulator phases, is computed numerically by the transfer matrix method. The numerics is supplemented by a field theory analysis (the large-$N_f$ expansion where $N_f$ is the number of valleys or Dirac cones), from which we obtain the correlation length exponent, and several anomalous dimensions at a non-trivial critical point separating a metallic phase and a Dirac semi-metal. A similar field theory approach is developed for disorder-driven transitions in symmetry class AIII, CI, and DIII. For these three symmetry classes, where topological superconductors are characterized by integer topological invariant, a complementary description is given in terms of the non-linear sigma model supplemented with a topological term which is a three-dimensional analogue of the Pruisken term in the integer quantum Hall effect.

cond-mat.mes-hall↗

Disorder-Induced Multiple Transition involving Z2 Topological Insulator

Effects of disorder on two-dimensional Z2 topological insulator are studied numerically by the transfer matrix method. Based on the scaling analysis, the phase diagram is derived for a model of HgTe quantum well as a function of disorder strength and magnitude of the energy gap. In the presence of sz non-conserving spin-orbit coupling, a finite metallic region is found that partitions the two topologically distinct insulating phases. As disorder increases, a narrow-gap topologically trivial insulator undergoes a series of transitions; first to metal, second to topological insulator, third to metal, and finally back to trivial insulator. We show that this multiple transition is a consequence of two disorder effects; renormalization of the band gap, and Anderson localization. The metallic region found in the scaling analysis corresponds roughly to the region of finite density of states at the Fermi level evaluated in the self-consistent Born approximation.

cond-mat.mes-hall↗

Surface quantized anomalous Hall current and magneto-electric effect in magnetically disordered topological insulators

We study theoretically the role of quenched magnetic disorder at the surface of a topological insulator by numerical simulation and scaling analysis. It is found that all the surface states are localized while the transverse conductivity is quantized to be $\pm {{e^2} \over {2 h}}$ as long as the Fermi energy is within the bulk gap. This greatly facilitates the realization of the topological magnetoelectric effect proposed by Qi {\it et al.} (Phys. Rev. B\textbf{78}, 195424 (2008)) with the surface magnetization direction being controlled by the simultaneous application of magnetic and electric fields .

cond-mat.mes-hall↗

Theory of electric polarization in multi-orbital Mott insulators

The interaction between the electric field, E, and spins in multi-orbital Mott insulators is studied theoretically. We find a generic dynamical coupling mechanism, which works for all crystal lattices and which does not involve relativistic effects. The general form of the coupling is -T_ab E_a e_b, where e is the `internal' electric field originating from the dynamical Berry phase of electrons and T_ab is a tensor determined by lattice symmetry. We discuss several effects of this interaction: (i) an unusual electron spin resonance induced by an oscillating electric field, (ii) the displacement of spin textures in an applied electric field, and (iii) the resonant absorption of circularly polarized light by Skyrmions, magnetic bubbles, and magnetic vortices.

cond-mat.str-el↗

Electric charging of magnetic textures on the surface of a topological insulator

A three-dimensional topological insulator manifests gapless surface modes, described by two-dimensional Dirac equation. We study magnetic textures, such as domain walls and vortices, in a ferromagnetic thin film deposited on a three-dimensional topological insulator. It is shown that these textures can be electrically charged, ascribed to the proximity effect with the Dirac surface states. We derive a general relation between the electric and the magnetic charges. As a physical consequence, we discuss domain wall motion driven by an applied electric field, which promises magnetic devices with high thermal efficiency.

cond-mat.mes-hall↗

Field-induced Kosterlitz-Thouless transition in the N=0 Landau level of graphene

At the charge neutral point, graphene exhibits a very unusual high resistance metallic state and a transition to a complete insulating phase in a strong magnetic field. We propose that the current carriers in this state are the charged vortices of the XY valley pseudospin order-parameter, a situation which is dual to a conventional thin superconducting film. We study energetics and the stability of this phase in the presence of disorder.

cond-mat.mes-hall↗

Weak (anti-)localization in doped Z_2-topological insulator

Localization properties of the doped Z_2-topological insulator are studied by weak localization theory. The disordered Kane-Mele model for graphene is taken as a prototype, and analyzed with attention to effects of the topological mass term, inter-valley scattering, and the Rashba spin-orbit interaction. The known tendency of graphene to anti-localize in the absence of inter-valley scattering between K and K' points is naturally placed as the massless limit of Kane-Mele model. The latter is shown to have a unitary behavior even in the absence of magnetic field due to the topological mass term. When inter-valley scattering is introduced, the topological mass term leaves the system in the unitary class, whereas the ordinary mass term, which appears if A and B sublattices are inequivalent, turns the system to weak localization. The Rashba spin-orbit interaction in the presence of K-K' scattering drive the system to weak anti-localization in sharp contrast to the ideal graphene case.

cond-mat.mes-hall↗

Fractional Quantum Hall Effects in Graphene and Its Bilayer

Single-layer and Bilayer of graphene are new classes of two-dimensional electron systems with unconventional band structures and valley degrees of freedom. The ground states and excitations in the integer and fractional quantum Hall regimes are investigated on torus and spherical geometries with the use of the density matrix renormalization group (DMRG) method. At nonzero Landau level indices, the ground states at effective filling factors 1, 1/3, 2/3 and 2/5 are valley polarized both in single-layer and bilayer graphenes. We examine the elementary charge excitations which could couple with the valley degrees of freedom (so called valley skyrmions). The excitation gaps are calculated and extrapolated to the thermodynamic limit. The largest excitation gap at effective filling 1/3 is obtained in bilayer graphene, which is a good candidate for experimental observation of fractional quantum Hall effect.

cond-mat.str-el↗

Anti-localization of graphene under substrate electric field

A simple criterion is provided how the (anti-)localization properties of graphene are determined in the presence of inter-valley scattering, Kane-Mele topological mass term, and Rashba spin-orbit interaction (SOI). A set of (pseudo) time-reversal operations show that the number of effective internal degrees of freedom, such as spin and pseudo-spins distinguishing the sublattice and the valley, is the crucial parameter for localization. It is predicted that perpendicular electric field due to gate voltage of the substrate drives the system to anti-localization by enhancing the Rashba SOI.

cond-mat.mes-hall↗

Coupled charge and valley excitations in graphene quantum Hall ferromagnets

Graphene is a two-dimensional carbon material with a honeycomb lattice and Dirac-type low-energy spectrum. In a strong magnetic field, where Coulomb interactions dominate against disorder broadening, quantum Hall ferromagnetic states realize at integer fillings. Extending the quantum Hall ferromagnetism to the fractional filling case of massless Dirac fermions, we study the elementally charge excitations which couple with the valley degrees of freedom (so-called valley skyrmions). With the use of the density matrix renomalization group (DMRG) method, the excitation gaps are calculated and extrapolated to the thermodynamic limit. These results exhibit numerical evidences and criterions of the skyrmion excitations in graphene.

cond-mat.mes-hall↗

Quantum Hall Effect of Massless Dirac Fermions in a Vanishing Magnetic Field

The effect of strong long-range disorder on the quantization of the Hall conductivity $σ_{xy}$ in graphene is studied numerically. It is shown that increasing Landau-level mixing progressively destroys all plateaus in $σ_{xy}$ except the plateaus at $σ_{xy}=\mp e^2/2h$ (per valley and per spin). The critical state at the charge-neutral Dirac point is robust to strong disorder and belongs to the universality class of the conventional plateau transitions in the integer quantum Hall effect. We propose that the breaking of time-reversal symmetry by ripples in graphene can realize this quantum critical point in a vanishing magnetic field.

cond-mat.mes-hall↗

Quantum Hall Ferromagnetism in Graphene

Graphene is a two-dimensional carbon material with a honeycomb lattice and Dirac-like low-energy excitations. When Zeeman and spin-orbit interactions are neglected its Landau levels are four-fold degenerate, explaining the $4 e^2/h$ separation between quantized Hall conductivity values seen in recent experiments. In this paper we derive a criterion for the occurrence of interaction-driven quantum Hall effects near intermediate integer values of $e^2/h$ due to charge gaps in broken symmetry states.

cond-mat.mes-hall↗

Topological delocalization of two-dimensional massless Dirac fermions

The beta function of a two-dimensional massless Dirac Hamiltonian subject to a random scalar potential, which e.g., underlies the theoretical description of graphene, is computed numerically. Although it belongs to, from a symmetry standpoint, the two-dimensional symplectic class, the beta function monotonically increases with decreasing $g$. We also provide an argument based on the spectral flows under twisting boundary conditions, which shows that none of states of the massless Dirac Hamiltonian can be localized.

cond-mat.mes-hall↗

Domain Formation in v=2/3 Fractional Quantum Hall Systems

We study the domain formation in the v=2/3 fractional quantum Hall systems basing on the density matrix renormalization group (DMRG) analysis. The ground-state energy and the pair correlation functions are calculated for various spin polarizations. The results confirm the domain formation in partially spin polarized states, but the presence of the domain wall increases the energy of partially spin polarized states and the ground state is either spin unpolarized state or fully spin polarized state depending on the Zeeman energy. We expect coupling with external degrees of freedom such as nuclear spins is important to reduce the energy of partially spin polarized state.

cond-mat.mes-hall↗

Quantum transport of massless Dirac fermions in graphene

Motivated by recent graphene transport experiments, we have undertaken a numerical study of the conductivity of disordered two-dimensional massless Dirac fermions. Our results reveal distinct differences between the cases of short-range and Coulomb randomly distributed scatterers. We speculate that this behavior is related to the Boltzmann transport theory prediction of dirty-limit behavior for Coulomb scatterers.

cond-mat.mes-hall↗

Gap evolution in nu=1/2 bilayer quantum Hall systems

Fractional quantum Hall states in bilayer system at total filling fraction $ν=1/2$ are examined numerically under some ranges of the layer separation and interlayer tunneling. It is shown that the ground state changes continuously from two-component state to one-component state as the interlayer tunneling rate is increased, while the lowest excited state changes discontinuously. This fact explains observed unusual behavior of the activation energy which reveals upward cusp as a function of interlayer tunneling. Some trial wave functions for the ground state and quasihole states are inspected.

cond-mat.mes-hall↗

Evolution of $nu=1$ Bilayer Quantum Hall Ferromagnet

The natures of the ground state in a $ν_{\rm T}=1$ bilayer quantum Hall system at a variety of layer spacing are investigated. At small layer separations the system exhibits spontaneous interlayer phase coherence. It is claimed that the Halperin's (1,1,1) state is not relevant in the incompressible regime near the incompressible to compressible transition point in which the Josephson-like effect was observed. The two-particle correlation function shows the deflated correlation hole at this regime. An effective model that can give a good approximation to the ground state is proposed. A connection to the modified composite fermion theory is discussed.

cond-mat.mes-hall↗

Pairing symmetry transitions in the even-denominator FQHE system

Transitions from a paired quantum Hall state to another quantum Hall state in bilayer systems are discussed in the framework of the edge theory. Starting from the edge theory for the Haldane-Rezayi state, it is shown that the charging effect of a bilayer system which breaks the SU(2) symmetry of the pseudo-spin shifts the central charge and the conformal dimensions of the fermionic fields which describe the pseudo-spin sector in the edge theory. This corresponds to the transition from Haldane-Rezayi state to Halperin's 331 state, or singlet d-wave to triplet p-wave ABM type paired state in the composite fermion picture. Considering interlayer tunneling, the tunneling rate-capacitance phase diagram for the $ν=5/2$ paired bilayer system is discussed.

cond-mat.mes-hall↗