arXiv subjects

Koji Muraki

Publications and source records attributed to Koji Muraki.

At least 37 records · Page 2Linked to original sources

arXiv2021

Screening effects of superlattice doping on the mobility of GaAs two-dimensional electron system revealed by in-situ gate control

We investigate the screening effects of excess electrons in the doped layer on the mobility of a GaAs two-dimensional electron system (2DES) with a modern architecture using short-period superlattice (SL) doping. By controlling the density of excess electrons in the SL with a top gate while keeping the 2DES density constant with a back gate, we are able to compare 2DESs with the same density but different degrees of screening using one sample. Using a field-penetration technique and circuit-model analysis, we determine the density of states and excess electron density in the SL, quantities directly linked to the screening capability. The obtained relation between mobility and excess electron density is consistent with the theory taking into account the screening by the excess electrons in the SL. The quantum lifetime determined from Shubnikov-de Haas oscillations is much lower than expected from theory and did not show a discernible change with excess electron density.

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arXiv2020

Quantized charge fractionalization at quantum Hall Y junctions in the disorder-dominated regime

Fractionalization is a phenomenon where an elementary excitation partitions into several pieces. This picture explains non-trivial transport through a junction of one-dimensional edge channels defined by topologically distinct quantum Hall states, for example, a hole-conjugate state at Landau-level filling factor $ν$ = 2/3. Here we employ a time-resolved scheme to identify an elementary fractionalization process; injection of charge q from a non-interaction region into an interacting and scattering region of one-dimensional channels results in the formation of a collective excitation with charge $(1-\textit{r})\textit{q}$ by reflecting fractionalized charge $\textit{rq}$. The fractionalization factors, $\textit{r}$ = 0.34$\pm$0.03 for $ν$ = 2/3 and $\textit{r}$ = 0.49$\pm$0.03 for $ν$ = 2, are consistent with the quantized values of 1/3 and 1/2, respectively, which are expected in the disorder dominated regime. The scheme can be used for generating and transporting fractionalized charges with a well-defined time course along a well-defined path.

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arXiv2020

On-chip coherent frequency-domain THz spectroscopy for electrical transport

We developed a coherent frequency-domain THz spectroscopic technique on a coplanar waveguide in the ultrabroad frequency range from 200 MHz to 1.6 THz based on continuous wave (CW) laser spectroscopy. Optical beating created by mixing two frequency-tunable CW lasers is focused on photoconductive switches to generate and detect high-frequency current in a THz circuit. In contrast to time-domain spectroscopy, our frequency-domain spectroscopy enables unprecedented frequency resolution of 10 MHz without using complex building blocks of femtosecond laser optics. Furthermore, due to the coherent nature of the photomixing technique, we are able to identify the origin of multiple reflections in the time domain using the Hilbert analysis and inverse Fourier transform. These results demonstrate that the advantages of on-chip coherent frequency-domain spectroscopy, such as its broadband, frequency resolution, usability, and time-domain accessibility, provide a unique capability for measuring ultrafast electron transport in integrated THz circuits.

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arXiv2020

Determination of $g$-factor in InAs two-dimensional electron system by capacitance spectroscopy

We determine the effective $g$-factor ($|g^\ast|$) of a two-dimensional electron gas (2DEG) using a new method based on capacitance spectroscopy. The capacitance-voltage profile of a 2DEG in an InAs/AlGaSb quantum well measured in an in-plane magnetic field shows a double-step feature that indicates the Zeeman splitting of the subband edge. The method allows for simultaneous and independent determination of $|g^\ast|$ and effective mass $m^\ast$. Data suggest that the biaxial tensile strain in the InAs layer has considerable impacts on both $m^\ast$ and $g^\ast$. Our method provides a means to determine $|g^\ast|$ that is complementary to the commonly used coincidence technique.

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arXiv2019

Ballistic hot-electron transport in a quantum Hall edge channel defined by a double gate

Ballistic transport of hot electrons in a quantum Hall edge channel is attractive for studying electronic analog of quantum optics, where the edge potential profile is an important parameter that governs the charge velocity and scattering by longitudinal-optical (LO) phonons. Here we use a parallel double gate to control the electric field of the edge potential, and investigate the ballistic length of the channel by using hot-electron spectroscopy. The ballistic length is significantly enhanced by reducing the LO phonon scattering rate in the tailored potential.

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arXiv2019

Active spatial control of terahertz graphene plasmons by tailoring carrier density profile

Graphene offers a possibility for actively controlling plasmon confinement and propagation by tailoring its spatial conductivity pattern. However, implementation of this concept has been hampered because uncontrollable plasmon reflection is easily induced by inhomogeneous dielectric environment. In this work, we demonstrate full electrical control of plasmon reflection/transmission at electronic boundaries induced by a zinc-oxide-based dual gate, which is designed to minimize the dielectric modulation. Using Fourier-transform infrared spectroscopy, we show that the plasmon reflection can be varied continuously with the carrier density difference between the adjacent regions. By utilizing this functionality, we show the ability to control size, position, and frequency of plasmon cavities. Our approach can be applied to various types of plasmonic devices, paving the way for implementing a programmable plasmonic circuit.

physics.app-ph↗

arXiv2019

Two-step breakdown of a local v = 1 quantum Hall state

We report quantum Hall effect breakdown of a local filling factor v_local = 1 state formed in a bulk v_bulk = 2 system in an AlGaAs/GaAs heterostructure. When a finite source-drain bias is applied across the local system, the breakdown occurs in two steps. At low bias, quantized conductance through the v_local = 1 system breaks down due to inter-edge electron tunneling. At high bias, the incompressibility of the v_local = 1 system breaks down because the spin gap closes. The two steps are resolved by combining measurements of resistively detected nuclear magnetic resonance and shot noise, which allows one to evaluate electron spin polarization in the local system and spin-dependent charge transport through the system, respectively.

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arXiv2019

Charge equilibration in integer and fractional quantum Hall edge channels in a generalized Hall-bar device

Charge equilibration between quantum-Hall edge states can be studied to reveal geometric structure of edge channels not only in the integer quantum Hall (IQH) regime but also in the fractional quantum Hall (FQH) regime particularly for hole-conjugate states. Here we report on a systematic study of charge equilibration in both IQH and FQH regimes by using a generalized Hall bar, in which a quantum Hall state is nested in another quantum Hall state with different Landau filling factors. This provides a feasible way to evaluate equilibration in various conditions even in the presence of scattering in the bulk region. The validity of the analysis is tested in the IQH regime by confirming consistency with previous works. In the FQH regime, we find that the equilibration length for counter-propagating $δν$ = 1 and $δν$ = -1/3 channels along a hole-conjugate state at Landau filling factor $ν$ = 2/3 is much shorter than that for co-propagating $δν$ = 1 and $δν$ = 1/3 channels along a particle state at $ν$ = 4/3. The difference can be associated to the distinct geometric structures of the edge channels. Our analysis with generalized Hall bar devices would be useful in studying edge equilibration and edge structures.

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arXiv2019

Spectroscopic study on hot-electron transport in a quantum Hall edge channel

Hot electron transport in a quantum Hall edge channel of an AlGaAs/GaAs heterostructure is studied by investigating the energy distribution function in the channel. Ballistic hot-electron transport, its optical-phonon replicas, weak electron-electron scattering, and electron-hole excitation in the Fermi sea are clearly identified in the energy spectra. The optical-phonon scattering is analyzed to evaluate the edge potential profile. We find that the electron-electron scattering is significantly suppressed with increasing the hot-electron's energy well above the Fermi energy. This can be understood with suppressed Coulomb potential with longer distance for higher energy. The results suggest that the relaxation can be suppressed further by softening the edge potential. This is essential for studying non-interacting chiral transport over a long distance.

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arXiv2018

Coupling between Quantum Hall Edge Channels on Opposite Sides of a Hall Bar

We investigate the coupling between quantum Hall (QH) edge channels (ECs) located at opposite sides of a 50-um-wide Hall bar by exciting a charged wavepacket in one EC and detecting time-dependent current in the other EC. In a QH state, the current shows a peak followed by a dip, demonstrating the existence of capacitive coupling across the incompressible two-dimensional electron system (2DES). The observed magnetic field dependence of the amplitude and time delay of the current suggests that the capacitance is affected by the presence of localized states. We also show that the dominant manner of the coupling changes gradually as the system changes between the QH and non-QH states.

cond-mat.str-el↗

arXiv2018

Signatures of a non-thermal metastable state in copropagating quantum Hall edge channels

A Tomonaga-Luttinger (TL) liquid is known as an integrable system, in which a non-equilibrium many-body state survives without relaxing to a thermalized state. This intriguing characteristic is tested experimentally in copropagating quantum Hall edge channels at bulk filling factor nu = 2. The unidirectional transport allows us to investigate the time evolution by measuring the spatial evolution of the electronic states. The initial state is prepared with a biased quantum point contact, and its spatial evolution is measured with a quantum-dot energy spectrometer. We find strong evidences for a non-thermal metastable state in agreement with the TL theory before the system relaxes to thermal equilibrium with coupling to the environment.

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arXiv2017

Charge Fractionalization in Artificial Tomonaga-Luttinger Liquids with Controlled Interaction Strength

We investigate charge fractionalizations in artificial Tomonaga-Luttinger liquids (TLLs) composed of two capacitively coupled quantum Hall edge channels (ECs) in graphene. The interaction strength of the artificial TLLs can be controlled through distance W between the ECs. We show that the fractionalization ratio r and the TLL mode velocity v vary with W. The experimentally obtained relation between v and r follows a unique function predicted by the TLL theory. We also show that charged wavepackets are reflected back and forth multiple times at both ends of the TLL region.

cond-mat.str-el↗

arXiv2017

Waveform measurement of charge- and spin-density wave packets in a Tomonaga-Luttinger liquid

In contrast to a free electron system, a Tomonaga-Luttinger (TL) liquid in a one dimensional (1D) electron system hosts charge and spin excitations as independent entities. When an electron wave packet is injected into a TL liquid, it transforms into wave packets carrying either charge or spin that propagate at different group velocities and move away from each other. This process, known as spin-charge separation, is the hallmark of TL physics. While the existence of these TL eigenmodes has been identified in momentum- or frequency-resolved measurements, their waveforms, which are a direct manifestation of 1D electron dynamics, have been long awaited to be measured. In this study, we present a time domain measurement for the spin-charge-separation process in an asymmetric chiral TL liquid comprising quantum Hall (QH) edge channels. We measure the waveforms of both charge and spin excitations by combining a spin filter with a time-resolved charge detector. Spatial separation of charge- and spin-wave packets over a distance exceeding 200 um was confirmed. In addition, we found that the 1D electron dynamics can be controlled by tuning the electric environment. These experimental results provide fundamental information about non-equilibrium phenomena in actual 1D electron systems.

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arXiv2016

Engineering quantum spin Hall insulators by strained-layer heterostructures

Quantum spin Hall insulators (QSHIs), also known as two-dimensional topological insulators, have emerged as an unconventional class of quantum states with insulating bulk and conducting edges originating from nontrivial inverted band structures, and have been proposed as a platform for exploring spintronics applications and exotic quasiparticles related to the spin-helical edge modes. Despite theoretical proposals for various materials, however, experimental demonstrations of QSHIs have so far been limited to two systems--HgTe/CdTe and InAs/GaSb--both of which are lattice-matched semiconductor heterostructures. Here we report transport measurements in yet another realization of a band-inverted heterostructure as a QSHI candidate--InAs/In$_{x}$Ga$_{1-x}$Sb with lattice mismatch. We show that the compressive strain in the In$_{x}$Ga$_{1-x}$Sb layer enhances the band overlap and energy gap. Consequently, high bulk resistivity, two orders of magnitude higher than for InAs/GaSb, is obtained deep in the band-inverted regime. The strain also enhances bulk Rashba spin-orbit splitting, leading to an unusual situation where the Fermi level crosses only one spin branch for electronlike and holelike bands over a wide density range. These properties make this system a promising platform for robust QSHIs with unique spin properties and demonstrate strain to be an important ingredient for tuning spin-orbit interaction.

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arXiv2016

Single-edge transport in an InAs/GaSb quantum spin Hall insulator

We report transport measurements in a single edge channel of an InAs/GaSb quantum spin Hall insulator, where the conduction occurs through only one pair of counterpropagating edge modes. By using a specific sample design involving highly asymmetric current paths, we electrically isolate a single edge channel of the two-dimensional topological insulator from the other edge. This enables us to probe a single edge by multiterminal measurements. Both two-terminal and four-terminal resistances show a nearly quantized plateau around $h/e^2$ for a 4-$μ$m-long edge, indicating quasiballistic transport. Our approach is advantageous in that it allows us to gain insight into a microscopic region from local measurements.

cond-mat.mes-hall↗

arXiv2016

Evaluation of Disorder Introduced by Electrolyte Gating through Transport Measurements in Graphene

We evaluate the degree of disorder in electrolyte gating devices through the transport measurements in graphene. By comparing the mobility in ion- and standard metal-gated devices, we show that the deposition of the ionic liquid introduces charged impurities with a density of approximately $6\times 10^{12}$ cm$^{-2}$; setting the upper limit of the mobility in graphene to 3000 cm$^2$/Vs. At higher temperature, phonons in the ionic liquid further reduce the mobility, making its upper limit 2000 cm$^2$/Vs at room temperature. Since the degree of disorder is independent of the base material, these results are valuable towards understanding disorder effects in general devices using electrolyte gating.

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arXiv2016

Andreev reflection and bound state formation in a ballistic two-dimensional electron gas probed by a quantum point contact

We study coherent transport and bound-state formation of Bogoliubov quasiparticles in a high-mobility In$_{0.75}%$Ga$_{0.25}$As two-dimensional electron gas (2DEG) coupled to a superconducting Nb electrode by means of a quantum point contact (QPC) as a tunable single-mode probe. Below the superconducting critical temperature of Nb, the QPC shows a single-channel conductance greater than the conductance quantum $2e^{2}/h$ at zero bias, which indicates the presence of Andreev-reflected quasiparticles, time-reversed states of the injected electron, returning back through the QPC. The marked sensitivity of the conductance enhancement to voltage bias and perpendicular magnetic field suggests a mechanism analogous to reflectionless tunneling--a hallmark of phase-coherent transport, with the boundary of the 2DEG cavity playing the role of scatters. When the QPC transmission is reduced to the tunneling regime, the differential conductance vs bias voltage probes the single-particle density of states in the proximity area. Measured conductance spectra show a double peak within the superconducting gap of Nb, demonstrating the formation of Andreev bound states in the 2DEG. Both of these results, obtained in the open and closed geometries, underpin the coherent nature of quasiparticles, i.e., phase-coherent Andreev reflection at the InGaAs/Nb interface and coherent propagation in the ballistic 2DEG.

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arXiv2015

Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure

We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front and back gate voltages. Temperature dependence of the longitudinal resistance peak shows the energy gap opening in the bulk region with increasing gate electric field. The suppression of bulk conduction and the transition to a topological insulator are confirmed by nonlocal resistance measurements using a dual lock-in technique, which allows us to rigorously compare the voltage distribution in the sample for different current paths without the influence of time-dependent resistance fluctuations.

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