arXiv subjects

Koji Muraki

Publications and source records attributed to Koji Muraki.

53 records · Page 3Linked to original sources

arXiv2015

Shot-noise evidence of fractional quasiparticle creation in a local fractional quantum Hall state

We have experimentally identified fractional quasiparticle creation in a tunneling process through a local fractional quantum Hall (FQH) state. The local FQH state is prepared in a low-density region near a quantum point contact (QPC) in an integer quantum Hall (IQH) system. Shot-noise measurements reveal a clear transition from elementary-charge tunneling at low bias to fractional-charge tunneling at high bias. The fractional shot noise is proportional to T1(1 ? T1) over a wide range of T1, where T1 is the transmission probability of the IQH edge channel. This binomial distribution indicates that fractional quasiparticles emerge from the IQH state to be transmitted through the local FQH state. The study of this tunneling process will enable us to elucidate the dynamics of Laughlin quasiparticles in FQH systems.

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arXiv2013

Cooperative Lifting of Spin Blockade in a Three-Terminal Triple Quantum Dot

We report measurements of multi-path transport through a triple quantum dot (TQD) in the few-electron regime using a GaAs three-terminal device with a separate lead attached to each dot. When two paths reside inside the transport window and are simultaneously spin-blockaded, the leak currents through both paths are significantly enhanced. We suggest that the transport processes in the two paths cooperate to lift the spin blockade. Fine structures in transport spectra indicate that different kinds of cooperative mechanisms are involved, depending on the details of the three-electron spin states governed by the size of exchange splitting relative to nuclear spin fluctuations. Our results indicate that a variety of correlation phenomena can be explored in three-terminal TQDs.

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arXiv2013

Fractionalized Wave Packets from an Artificial Tomonaga-Luttinger Liquid

The model of interacting fermion systems in one dimension known as Tomonaga-Luttinger liquid (TLL) provides a simple and exactly solvable theoretical framework, predicting various intriguing physical properties. Evidence of TLL has been observed as power-law behavior in the electronic transport and momentum-resolved spectroscopy on various types of one-dimensional (1D) conductors. However, these measurements, which rely on dc transport involving tunneling processes, cannot identify the eigenmodes of the TLL, i.e., collective excitations characterized by non-trivial effective charge e* and charge velocity v*. The elementary process of charge fractionalization, a phenomenon predicted to occur at the junction of a TLL and non-interacting leads, has not been observed. Here we report time-resolved transport measurements on an artificial TLL comprised of coupled integer quantum Hall edge channels, successfully identifying single charge fractionalization processes. An electron wave packet with charge e incident from a non-interacting region breaks up into several fractionalized charge wave packets at the edges of the artificial TLL region, from which e* and v* can be directly evaluated. These results are informative for elucidating the nature of TLLs and low-energy excitations in the edge channels.

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arXiv2013

Distributed-element circuit model of edge magnetoplasmon transport

We report experimental and theoretical studies of edge magnetoplasmon (EMP) transport in quantum Hall (QH) devices. We develop a model that allows us to calculate the transport coefficients of EMPs in QH devices with various geometries. In our model, a QH system is described as a chiral distributed-element (CDE) circuit, where the effects of Coulomb interaction are represented by an electrochemical capacitance distributed along unidirectional transmission lines. We measure the EMP transport coefficients through single- and coupled-edge channels, a quantum point contact, and single- and double-cavity structures. These measured transmission spectra can be reproduced well by simulations using the corresponding CDE circuits. By fitting the experimental results with the simulations, we deduce the circuit parameters that characterize the electrostatic environment around the edge channels in a realistic QH system. The observed gate-voltage dependences of the EMP transport properties in gate-defined structures are explained in terms of the gate tuning of the circuit parameters in CDE circuits.

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arXiv2013

Edge Channel Transport in InAs/GaSb Topological Insulating Phase

Transport in InAs/GaSb heterostructures with different InAs layer thicknesses is studied using a six-terminal Hall bar geometry with a 2-$μ$m edge channel length. For a sample with a 12-nm-thick InAs layer, non-local resistance measurements with various current/voltage contact configurations reveal that the transport is dominated by edge channels with negligible bulk contribution. Systematic non-local measurements allow us to extract the resistance of individual edge channels, revealing sharp resistance uctuations indicative of inelastic scattering. Our results show that the InAs/GaSb system can be tailored to have conducting edge channels while keeping a gap in the bulk region and provide a way of studying 2D topological insulators even when quantized transport is absent.

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arXiv2013

Intrinsic and extrinsic origins of low-frequency noise in GaAs/AlGaAs Schottky-gated nanostructures

We study low-frequency noise in current passing through quantum point contacts fabricated from several GaAs/AlGaAs heterostructures with different layer structures and fabrication processes. In contrast to previous reports, there is no gate-dependent random telegraph noise (RTN) originating from tunneling through a Schottky barrier in devices fabricated using the standard low-damage process. Gate-dependent RTN appears only in devices fabricated with a high-damage process that induces charge trap sites. We show that the insertion of AlAs/GaAs superlattices in the AlGaAs barrier helps to suppress trap formation. Our results enable the fabrication of damage-resistant and thus low-noise devices.

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arXiv2013

Shot noise spectroscopy on a semiconductor quantum dot in the elastic and inelastic cotunneling regimes

We report shot noise spectroscopy on a semiconductor quantum dot in a cotunneling regime. The DC conductance measurements show clear signatures of both elastic and inelastic cotunneling transport inside a Coulomb diamond. We observed Poissonian shot noise with the Fano factor $F\approx 1$ in the elastic cotunneling regime, and super-Poissonian Fano factor $1<F<3$ in the inelastic cotunneling regime. The differences in the value of the Fano factor between elastic and inelastic processes reveal the microscopic mechanisms involved in the cotunneling transport.

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arXiv2012

Observation of Hysteretic Transport Due to Dynamic Nuclear Spin Polarization in a GaAs Lateral Double Quantum Dot

We report a new transport feature in a GaAs lateral double quantum dot that emerges only for magnetic field sweeps and shows hysteresis due to dynamic nuclear spin polarization (DNP). This DNP signal appears in the Coulomb blockade regime by virtue of the finite inter-dot tunnel coupling and originates from the crossing between ground levels of the spin triplet and singlet extensively used for nuclear spin manipulations in pulsed gate experiments. The unexpectedly large signal intensity is suggestive of unbalanced DNP between the two dots, which opens up the possibility of controlling electron and nuclear spin states via DC transport.

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arXiv2012

Unraveling the spin polarization of the v = 5/2 fractional quantum Hall state

The fractional quantum Hall (FQH) effect at filling factor v = 5/2 has recently come under close scrutiny, as it may possess quasi-particle excitations obeying nonabelian statistics, a property sought for topologically protected quantum operations. Yet, its microscopic origin remains unidentified, and candidate model wave functions include those with undesirable abelian statistics. Here we report direct measurements of the electron spin polarization of the v = 5/2 FQH state using resistively detected nuclear magnetic resonance (NMR). We find the system to be fully polarized, which unambiguously rules out the most-likely abelian contender and thus lends strong support for the v = 5/2 state being nonabelian. Our measurements reveal an intrinsically different nature of interaction in the first-excited Landau level underlying the physics at v = 5/2.

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arXiv2011

Spin-orbital Kondo effect in a parallel double quantum dot

Transport properties of the two-orbital Kondo effect involving both spin and orbital (pseudospin) degrees of freedom were examined in a parallel double quantum dot with a sufficient interdot Coulomb interaction and negligibly small interdot tunneling. The Kondo effect was observed at the interdot Coulomb blockade region with degeneracies of both spin and orbital degrees of freedom. When the orbital degeneracy is lifted by applying a finite detuning, the Kondo resonance exhibits a triple-peak structure, indicating that both spin and orbital contributions are involved.

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arXiv2011

$nu=5/2$ Fractional Quantum Hall State in Low-Mobility Electron Systems: Different Roles of Disorder

We report the observation of a fully developed fractional quantum Hall state at $ν=5/2$ in GaAs/Al$_{x}$Ga$_{1-x}$As quantum wells with mobility well below $10^{7}$\thinspace cm$^{2}$/Vs. This is achieved either by strong illumination or reducing the barrier Al composition without illumination. We explain both results in terms of screening of the ionized remote impurity (RI) potential by nearby neutral shallow donors. Despite the dramatic improvement in the transport features, the energy gap $Δ_{5/2}$ is limited to a rather small value ($\sim100$ mK), which indicates that once the RI potential is well screened and the $5/2$ state emerges, the size of $Δ_{5/2}$ is limited by the mobility, i.e., by background impurities.

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arXiv2010

Gate-dependent spin-orbit coupling in multi-electron carbon nanotubes

Understanding how the orbital motion of electrons is coupled to the spin degree of freedom in nanoscale systems is central for applications in spin-based electronics and quantum computation. We demonstrate this coupling of spin and orbit in a carbon nanotube quantum dot in the general multi-electron regime in presence of finite disorder. Further, we find a strong systematic dependence of the spin-orbit coupling on the electron occupation of the quantum dot. This dependence, which even includes a sign change is not demonstrated in any other system and follows from the curvature-induced spin-orbit split Dirac-spectrum of the underlying graphene lattice. Our findings unambiguously show that the spin-orbit coupling is a general property of nanotube quantum dots which provide a unique platform for the study of spin-orbit effects and their applications.

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arXiv2010

Voltage-controlled Group Velocity of Edge Magnetoplasmon in the Quantum Hall Regime

We investigate the group velocity of edge magnetoplasmons (EMPs) in the quantum Hall regime by means of time-of-flight measurement. The EMPs are injected from an Ohmic contact by applying a voltage pulse, and detected at a quantum point contact by applying another voltage pulse to its gate. We find that the group velocity of the EMPs traveling along the edge channel defined by a metallic gate electrode strongly depends on the voltage applied to the gate. The observed variation of the velocity can be understood to reflect the degree of screening caused by the metallic gate, which damps the in-plane electric field and hence reduces the velocity. The degree of screening can be controlled by changing the distance between the gate and the edge channel with the gate voltage.

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arXiv2009

NMR Evidence for Spin-Pseudospin Intermixing in Quantum Hall Skyrmions

We investigate quasiparticles in bilayer quantum Hall systems around total filling factor nu =1 by current-pumped and resistively detected NMR. The measured Knight shift reveals that the spin component in the quasiparticle increases continuously with $Δ_{SAS}$. Combined with results for the pseudospin component obtained by activation gap measurements, this demonstrates that both spin and pseudospin are contained in a quasiparticle at intermediate $Δ_{SAS}$, providing evidence for the existence of the spin-pseudospin intermixed SU(4) skyrmion. Nuclear spin relaxation measurements show that the collective behavior of the SU(4) skyrmion system qualitatively changes with $Δ_{SAS}$.

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arXiv2009

Wide-band capacitance measurement on a semiconductor double quantum dot for studying tunneling dynamics

We propose and demonstrate wide-band capacitance measurements on a semiconductor double-quantum dot (DQD) to study tunneling dynamics. By applying phase-tunable high-frequency signals independently to the DQD and a nearby quantum-point-contact charge detector, we perform on-chip lock-in detection of the capacitance associated with the single-electron motion over a wide frequency range from hertz to a few ten gigahertz. Analyzing the phase and the frequency dependence of the signal allows us to extract the characteristic tunneling rates. We show that, by applying this technique to the interdot tunnel coupling regime, quantum capacitance reflecting the strength of the quantum-mechanical coupling can be measured.

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arXiv2005

Individual Mechanisms of Nuclear Spin Decoherence in a Nanoscale GaAs NMR Device

We study decoherence of nuclear spins in a nanoscale GaAs device based on resistively detected nuclear magnetic resonance (NMR). We demonstrate how the spin echo technique can be modified for our system, and this is compared to the damping of Rabi-type coherent oscillations. By selectively decoupling nuclear-nuclear and electron-nuclear spin, we determine decoherence rates due to individual mechanisms, namely, direct or indirect dipole coupling between different or like nuclides and electron-nuclear spin coupling. The data reveal that the indirect dipole coupling between Ga and As mediated by conduction electrons has the strongest contribution, whereas the direct dipole coupling between them has the smallest, reflecting the magic angle condition between the As-Ga bonds and the applied magnetic field.

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arXiv2004

Effects of Quantum-Well Inversion Asymmetry on Electron-Nuclear Spin Coupling in the Fractional Quantum Hall Regime

We examine effects of inversion asymmetry of a GaAs/Al0.3Ga0.7As quantum well (QW) on electron-nuclear spin coupling in the fractional quantum Hall (QH) regime. Increasing the QW potential asymmetry at a fixed Landau-level filling factor (nu) with gate voltages suppresses the current-induced nuclear spin polarization in the nu = 2/3 Ising QH ferromagnet, while it significantly enhances the nuclear spin relaxation at general nu. These findings suggest that mixing of different spin states due to the Rashba spin-orbit interaction strongly affects the electron-nuclear spin coupling.

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