arXiv subjects

Komalavalli Thirunavukkuarasu

Publications and source records attributed to Komalavalli Thirunavukkuarasu.

6 recordsLinked to original sources

arXiv2026

Raman Scattering Evidence for Fluctuating Kagome-Plane Moments in $\mathrm{B} \parallel [111]$ in Pr$_2$Zr$_2$O$_7$ pyrochlore

The exotic magnetic properties of the pyrochlore Pr$_2$Zr$_2$O$_7$ are determined by the coupling of spin, orbital, and lattice degrees of freedom. Magnetism in this material originates from the non-Kramers Pr$^{3+}$ ion, and the exotic behavior has been discussed both in the framework of dipole-quadrupole properties of magnetic moments and disorder splitting the non-Kramers doublet. We use magneto-Raman spectroscopy to probe the crystal electric field (CEF) excitations of Pr$^{3+}$ in magnetic fields up to 14 T applied along the [100] and [111] crystallographic directions at 2 K. For $\mathrm{B}\parallel[100]$, the field evolution of the Raman active crystal field modes is quantitatively described by conventional Zeeman splitting of the Pr$^{3+}$ ground state doublet, including the thermally populated upper Zeeman branch at elevated temperature. For $\mathrm{}{B}\parallel[111]$, the spectra separate into responses from the triangular and kagome sublattices, and the CEF excitations of Pr$^{3+}$ on the triangular lattice exhibit the expected Zeeman shift consistent with full moments polarization. In contrast, the CEF excitations of Pr$^{3+}$ on the kagome lattice do not split as expected and instead broaden strongly with increasing field. This behavior is inconsistent with a static polarized configuration and is captured phenomenologically by a motional-narrowing description in which the kagome plane moments fluctuate between Zeeman-split levels on a meV timescale. This result offers a natural explanation for the reduced magnetization observed in $\mathrm{}{B}\parallel[111]$ and provides further evidence of the dipole-quadrupole properties of magnetic moments. It highlights Raman scattering as a sensitive probe of exotic spin-orbital dynamics in frustrated magnets.

cond-mat.str-el↗

arXiv2025

Hidden symmetry-breaking in a kagome Ising ferromagnet

Kagome metals can host unconventional electronic phenomena that emerge from their frustrated lattice geometry and associated band topology. Correlated electronic orders, such as charge-density waves and superconductivity, are observed to intertwine with subtle time-reversal symmetry breaking whose microscopic origin is not currently understood. Here, we provide evidence for such time-reversal symmetry breaking in the kagome metal TbV$_6$Sn$_6$ arising from staggered magnetic moments within the kagome layers. TbV$_6$Sn$_6$ consists of metallic V kagome layers separated by Tb triangular layers that host Ising ferromagnetic order. Deep in the ferromagnetic state, the Tb Ising doublet ground state should display a single, dispersionless spin-flip excitation. Instead, inelastic neutron scattering reveals two sharp excitations associated with inequivalent Tb sites, demonstrating that a symmetry-broken phase coexists with Ising ferromagnetism. No additional structural or magnetic phase transitions are detected, and first-principles calculations rule out lattice distortions as the origin of the splitting. We attribute this effect to time-reversal symmetry breaking encoded by small V moments that couple to the Tb sublattice and leave a measurable spectral fingerprint. Our results establish rare-earth local moment spectroscopy as a sensitive probe of subtle broken symmetries and highlight an unexpected interplay between kagome magnetism and rare-earth local moment magnetism.

cond-mat.str-el↗

arXiv2025

Lithography defined semiconductor moires with anomalous in-gap quantum Hall states

Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moire superlattices (MSL) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproducibility and scalability of utilizing 2D MSLs for microelectronics and quantum technologies due to their exfoliate-tear-stack method. Here, we propose lithography defined semiconductor moires superlattices, in which three fundamental parameters, electron-electron interaction, spin-orbit coupling, and band topology, are designable. We experimentally investigate quantum transport properties in a moire specimen made in an InAs quantum well. Strong anomalous in-gap states are observed within the same integer quantum Hall state. Our work opens up new horizons for studying 2D quantum-materials phenomena in semiconductors featuring superior industry-level quality and state-of-the-art technologies, and they may potentially enable new quantum information and microelectronics technologies.

cond-mat.mes-hall↗

arXiv2020

The Magnetoelastic Distortion of Multiferroic BiFeO$_3$ in the Canted Antiferromagnetic State

Using THz spectroscopy, we show that the spin-wave spectrum of multiferroic BiFeO$_3$ in its high-field canted antiferromagnetic state is well described by a spin model that violates rhombohedral symmetry. We demonstrate that the monoclinic distortion of the canted antiferromagnetic state is induced by the single-ion magnetoelastic coupling between the lattice and the two nearly anti-parallel spins. The revised spin model for BiFeO$_3$ contains two new single-ion anisotropy terms that violate rhombohedral symmetry and depend on the direction of the magnetic field.

cond-mat.str-el↗

arXiv2019

Melting of charge order in the low-temperature state of an electronic ferroelectric

Strong electronic interactions can drive a system into a state with a symmetry breaking. Lattice frustration or competing interactions tend to prevent a symmetry breaking, leading to quantum disordered phases. In spin systems frustration can produce a spin liquid state. Frustration of a charge degree of freedom also can result in various exotic states, however, experimental data on these effects is scarce. In this work we demonstrate how a charge ordered ferroelectric looses the order on cooling to low temperatures using an example of a Mott insulator on a weakly anisotropic triangular lattice $κ$-(BEDT-TTF)$_2$Hg(SCN)$_2$Cl. Typically, a low temperature ordered state is a ground state of a system, and the demonstrated re-entrant behavior is unique. Raman scattering spectroscopy finds that this material enters an insulating ferroelectric `dipole solid' state at $T=30~K$, but below $T=15~K$ the order melts, while preserving the insulating energy gap. The resulting phase diagram is relevant to other quantum paraelectric materials.

cond-mat.str-el↗

arXiv2015

High Photoresponsivity and Short Photo Response Times in Few-Layered WSe$_2$ Transistors

Here, we report the photoconducting response of field-effect transistors based on three atomic layers of chemical vapor transport grown WSe$_2$ crystals mechanically exfoliated onto SiO$_2$. We find that tri-layered WSe$_2$ field-effect transistors, built with the simplest possible architecture, can display high hole mobilities ranging from 350 cm$^2$/Vs at room temperature (saturating at a value of ~500 cm$^2$/Vs below 50 K) displaying a strong photocurrent response which leads to exceptionally high photo responsivities up to 7 A/W under white light illumination of the entire channel for power densities p < 10$^2$ W/m$^2$. Under a fixed wavelength of $λ$ = 532 nm and a laser spot size smaller than the conducting channel area we extract photo responsitivities approaching 100 mA/W with concomitantly high external quantum efficiencies up to ~ 40 % at room temperature. These values surpass values recently reported from more complex architectures, such as graphene and transition metal dichalcogenides based heterostructures. Also, tri-layered WSe$_2$ photo-transistors display photo response times in the order of 10 microseconds. Our results indicate that the addition of a few atomic layers considerably decreases the photo response times, probably by minimizing the interaction with the substrates, while maintaining a very high photo-responsivity.

cond-mat.mes-hall↗