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arXiv · 2506.06627

Lithography defined semiconductor moires with anomalous in-gap quantum Hall states

Wei Pan·D. Bruce Burckel·Catalin D. Spataru·Keshab R. Sapkota·Aaron J. Muhowski·Samuel D. Hawkins·John F. Klem·Layla S. Smith·Doyle A. Temple·Zachery A. Enderson·Zhigang Jiang·Komalavalli Thirunavukkuarasu·Li Xiang·Mykhaylo Ozerov·Dmitry Smirnov·Chang Niu·Peide D. Ye·Praveen Pai·Fan Zhang
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Abstract

Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moire superlattices (MSL) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproducibility and scalability of utilizing 2D MSLs for microelectronics and quantum technologies due to their exfoliate-tear-stack method. Here, we propose lithography defined semiconductor moires superlattices, in which three fundamental parameters, electron-electron interaction, spin-orbit coupling, and band topology, are designable. We experimentally investigate quantum transport properties in a moire specimen made in an InAs quantum well. Strong anomalous in-gap states are observed within the same integer quantum Hall state. Our work opens up new horizons for studying 2D quantum-materials phenomena in semiconductors featuring superior industry-level quality and state-of-the-art technologies, and they may potentially enable new quantum information and microelectronics technologies.

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Wei Pan, D. Bruce Burckel, Catalin D. Spataru, Keshab R. Sapkota, Aaron J. Muhowski, Samuel D. Hawkins, John F. Klem, Layla S. Smith, Doyle A. Temple, Zachery A. Enderson, Zhigang Jiang, Komalavalli Thirunavukkuarasu, Li Xiang, Mykhaylo Ozerov, Dmitry Smirnov, Chang Niu, Peide D. Ye, Praveen Pai, Fan Zhang. 2025-06-07. Lithography defined semiconductor moires with anomalous in-gap quantum Hall states. https://doi.org/10.1021/acs.nanolett.5c02180

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