arXiv subjects

Konstantinos Papagelis

Publications and source records attributed to Konstantinos Papagelis.

At least 19 recordsLinked to original sources

arXiv2025

Impact of interdigitated electrodes design on the low frequency and random telegraph noise of single-layer graphene micro ribbons

High performance devices consisting of interdigitated electrodes (IDEs) on top of single-layer graphene (SLG) are candidates with favorable prospects for sensing applications. Graphene micro ribbons (GMRs) of various widths and IDE design geometries were fabricated and experimentally examined regarding their low-frequency noise (LFN) behavior. Measurements revealed a 1/f behavior and different kinds of trap activity behind it, which were studied through the analysis of random telegraph noise (RTN) signals. Our investigation suggests that adjusting the geometrical characteristics of either the GMR width or the IDE topology can significantly influence the signal-to-noise ratio (SNR) of SLG-based electronics. On the bright side, the results of our study can provide useful guidelines for fabrication decisions to maximize the SNR.

cond-mat.mes-hall↗

arXiv2025

First-principles derived force field for h-BN monolayer nanostructures: Applications to sheets, nanotubes and nanotori

In this work, we present an empirical force field for hexagonal boron nitride (hBN) monolayers, derived via a bottom-up strategy from first principles calculations. We aim to deliver a simple analytical force field for boron nitride which is efficient and applicable to large-scale simulations, without compromising its accuracy. The force field is developed with the goal to analytically reproducing the potential energy contributions arising from planar bond-stretching and bond-angle-bending deformations, as well as from out-of-plane torsional deformations, as obtained from periodic density functional theory calculations. Analytical anharmonic potential energy functions were employed to describe and parameterize the force field through a fitting process. The potential is applied for estimating in-plane (stiffness matrix and elastic constants) and out-of-plane (bending and Gaussian rigidity) mechanical properties of monolayer hBNs using both molecular mechanics calculations and analytical formulas. Additionally, we determined the elastic properties of more complex nanostructures, including hBN nanotubes and nanotori. By combining a continuum model for bent hollow beams with the definition of bending rigidity, we validate the model predictions against an analytical expression for the bending rigidity of large-diameter hBN nanotubes, expressed as a function of their radius and the in-plane Young modulus.

cond-mat.mes-hall↗

arXiv2025

1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes

Single-layer Graphene (SLG) is a promising material for sensing applications. High performance graphene sensors can be achieved when Interdigitated Electrodes (IDE) are used. In this research work, we fabricated SLG micro-ribbon (GMR) devices with IDE having different geometric parameters. 1/f noise behavior was observed in all of the examined devices, and in some cases random telegraph noise (RTN) signals suggesting that carrier trapping/de-trapping is taking place. Our experimental results indicate that the geometrical characteristics can have a crucial impact on device performance, due to the direct area dependence of the noise level.

physics.app-ph↗

arXiv2024

Temperature Dependence of Phonon Energies and Lifetimes in Single- and Few-layered Graphene

In this work, we have studied the phonon properties of multi-layered graphene with the use of Molecular Dynamics (MD) simulations and the k-space Autocorrelation Sequence (k-VACS) method. We calculate the phonon dispersion curves, densities of states and lifetimes $τ$ of few-layered graphene of 1-5 layers and graphite. $Γ$-point phonon energies and lifetimes are investigated for different temperatures ranging from 80 K to 1000 K. The study focuses on the impact of the interlayer interaction and temperature on the energies and lifetimes of the $Γ$-point phonons, as well as the type of interlayer potential used. For the later we used the Kolmogorov-Crespi (KC) and the Lennard-Jones (LJ) potentials. We have found that the number of layers $N$ has little effect on the intra-layer (ZO and G) mode energies and greater effect on the inter-layer (Layer Shearing and Layer Breathing) modes, while $τ$ is generally affected by $N$ for all modes, except for the Layer Shear mode. The trend of $N$ on the lifetimes was also found to independent of the type of potential used. For the Raman-active G phonon, our calculations show that the lifetime increase with $N$ and that this increase is directly connected to the strength of the interlayer coupling and how this is modelled.

cond-mat.mtrl-sci↗

arXiv2024

Strain distribution in WS2 monolayers detected through Polarization-resolved Second Harmonic Generation

Two-dimensional (2D) graphene and graphene-related materials (GRMs) show great promise for future electronic devices. Nevertheless, GRMs result distinct properties under the influence of the substrate that serves as support through uneven compression/ elongation of GRMs surface atoms. Strain in GRM monolayers is the most common feature that alters the interatomic distances, band structure, providing a new degree of freedom that allows regulation of their electronic properties and introducing the field of straintronics. Having an all-optical detection, a minimally invasive tool that rapidly probes strain in large areas of GRM monolayers, would be of great importance in the research and development of novel 2D devices. Here, we use Polarization-resolved Second Harmonic Generation (P-SHG) optical imaging to identify strain distribution, induced in a single layer of WS2 placed on a pre-patterned Si/SiO2 substrate with cylindrical wells. By fitting the P-SHG data pixel-by-pixel, we produce spatially resolved images of the crystal armchair direction. In regions where the WS2 monolayer conforms to the pattern topography, a distinct cross-shaped pattern is evident in the armchair image owing to strain. The presence of strain in these regions is independently confirmed using a combination of atomic force microscopy and Raman mapping.

physics.app-ph↗

arXiv2023

Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

Strain engineering can modulate the material properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS$_2$, a 2D semiconductor, but the effects of biaxial strain on charge transport are not well-understood in 2D semiconductors. Here, we use biaxial tensile strain on flexible substrates to probe the electron mobility in monolayer WS$_2$ and MoS$_2$ transistors. This approach experimentally achieves ~2x higher on-state current and mobility with ~0.3% applied biaxial strain in WS$_2$, the highest mobility improvement at the lowest strain reported to date. We also examine the mechanisms behind this improvement through density functional theory simulations, concluding that the enhancement is primarily due to reduced intervalley electron-phonon scattering. These results underscore the role of strain engineering 2D semiconductors for flexible electronics, sensors, integrated circuits, and other optoelectronic applications.

cond-mat.mes-hall↗

arXiv2018

Compression behavior of simply-supported and fully embedded monolayer graphene: theory and experiment

Single layer graphene simply-supported on a polymer substrate was subjected to axial compression and its behavior upon loading was monitored with laser Raman spectroscopy (LRS). The graphene was found to fail by wrinkling (buckling) at a critical strain of -0.30% and at a compressive stress of ~1.6 GPa, as revealed by the conversion of the spectroscopic data to actual stress-strain curves. This contrasts with the value of -0.60% and stress of ~3.8 GPa required for failure initiation in the fully embedded case. To elucidate the failure mechanisms in the two cases examined, molecular dynamics simulations employing the AIREBO potential were performed. We assess the impact of surface roughness, graphene-polymer interaction, and of thermal (phonon) ripples on the onset of wrinkle formation. Overall good agreement was found between theory and experiment. As argued herein, the understanding and control of out-of-plane phenomena upon mechanical loading of graphene are important prerequisites for the design and function of new graphene-based devices.

cond-mat.mtrl-sci↗

arXiv2018

Optical detection of strain and doping inhomogenieties in single layer MoS2

Van der Waals single-layer materials are characterized by an inherent extremely low bending rigidity and therefore are prone to nanoscale structural modifications due to substrate interactions. Such interactions can induce excess charge concentration, conformational ripples and residual mechanical strain. In this work, we employed spatially resolved Raman and Photoluminescence images to investigate strain and doping inhomogeneities in a single layer exfoliated Molybdenum disulphide crystal. We have found that correlations between the spectral parameters of the most prominent Raman bands A1' and E' enable us to decouple and quantify strain and charge doping effects. In comparison with AFM topography, we show that the spatial distribution of the linewidth of the A-exciton peak is strain sensitive and can capture features smaller than the laser spot size. The presented optical analysis may have implications in the development of high-quality devices based on two-dimensional materials since structural and electronic modifications affect considerably their carrier mobility and conductivity.

cond-mat.mtrl-sci↗

arXiv2018

Stress and charge transfer in uniaxially strained CVD graphene

Mechanical properties of graphene prepared by chemical vapor deposition (CVD) are not easily comparable to the properties of nearly perfect graphene prepared by mechanical cleavage. In this work, we attempt to investigate the mechanical performance of CVD graphene (simply supported or embedded in polymer matrix), transferred by two different techniques, under uniaxial loading with simultaneous in-situ monitoring by Raman microspectroscopy. The level of charge transfer doping and strain is assessed using the vector analysis modified for uniaxial strain. The strain distribution across the samples varies significantly, owing to the growth and transfer process, which induces wrinkles and faults in the CVD graphene. In simply supported specimens, the stress transfer efficiency is generally very low and the changes in Raman spectra are dominated by variations in the charge transfer originating from the realignment of the domains on the substrate upon the application of strain. In contrast, samples covered with an additional polymer layer exhibit an improved stress transfer efficiency, and the alterations of charge doping levels are negligible. In fully embedded specimens, the variations in stress transfer efficiencies are caused by the size of the effective graphene domains defined by cracks, folds and or/wrinkles.

cond-mat.mtrl-sci↗

arXiv2017

Atomistic potential for graphene and other sp$^2$ carbon systems

We introduce a torsional force field for sp$^2$ carbon to augment an in-plane atomistic potential of a previous work (Kalosakas et al, J. Appl. Phys. {\bf 113}, 134307 (2013)) so that it is applicable to out-of-plane deformations of graphene and related carbon materials. The introduced force field is fit to reproduce DFT calculation data of appropriately chosen structures. The aim is to create a force field that is as simple as possible so it can be efficient for large scale atomistic simulations of various sp$^2$ carbon structures without significant loss of accuracy. We show that the complete proposed potential reproduces characteristic properties of fullerenes and carbon nanotubes. In addition, it reproduces very accurately the out-of-plane ZA and ZO modes of graphene's phonon dispersion as well as all phonons with frequencies up to 1000~cm$^{-1}$.

cond-mat.mtrl-sci↗

arXiv2017

Wrinkled few-layer graphene as highly efficient load bearer

Multilayered graphitic materials are not suitable as load-bearers due to their inherent weak interlayer bonding (for example, graphite is a solid lubricant in certain applications). This situation is largely improved when two-dimensional (2-D) materials such as a monolayer (SLG) graphene are employed. The downside in these cases is the presence of thermally or mechanically induced wrinkles which are ubiquitous in 2-D materials. Here we set out to examine the effect of extensive large wavelength/ amplitude wrinkling on the stress transfer capabilities of exfoliated simply-supported graphene flakes. Contrary to common belief we present clear evidence that this type of "corrugation" enhances the load bearing capacity of few-layer graphene as compared to 'flat' specimens. This effect is the result of the significant increase of the graphene/polymer interfacial shear stress per increment of applied strain due to wrinkling and paves the way for designing affordable graphene composites with highly improved stress-transfer efficiency.

cond-mat.mtrl-sci↗

arXiv2017

Evaluating arbitrary strain configurations and doping in graphene with Raman spectroscopy

Raman spectroscopy is a powerful tool for characterizing the local properties of graphene. Here, we introduce a method for evaluating unknown strain configurations and simultaneous doping. It relies on separating the effects of hydrostatic strain (peak shift) and shear strain (peak splitting) on the Raman spectrum of graphene. The peak shifts from hydrostatic strain and doping are separated with a correlation analysis of the 2D and G frequencies. This enables us to obtain the local hydrostatic strain, shear strain and doping without any assumption on the strain configuration prior to the analysis. We demonstrate our approach for two model cases: Graphene under uniaxial stress on a PMMA substrate and graphene suspended on nanostructures that induce an unknown strain configuration. We measured $ω_\mathrm{2D}/ω_\mathrm{G} = 2.21 \pm 0.05$ for pure hydrostatic strain. Raman scattering with circular corotating polarization is ideal for analyzing strain and doping, especially for weak strain when the peak splitting by shear strain cannot be resolved.

cond-mat.mtrl-sci↗

arXiv2016

Suspended Monolayer Graphene under True Uniaxial Deformation

2D crystals, such as graphene, exhibit the higher strength and stiffness of any other known man-made or natural material. So far, this assertion has been primarily based on modelling predictions and on bending experiments in combination with pertinent modelling. True uniaxial loading of suspended graphene is not easy to accomplish; however such an experiment is of paramount importance in order to assess the intrinsic properties of graphene without the influence of an underlying substrate. In this work we report on uniaxial tension of graphene up to moderate strains of 0.8% ca.. This has been made possible by sandwiching the graphene flake between two polymethylmethacrylate (PMMA) layers and by suspending its central part by the removal of a section of PMMA with e-beam lithography. True uniaxial deformation is confirmed by the measured large phonon shifts with strain by Raman spectroscopy and the indication of lateral buckling (similar to what is observed for thin macroscopic membranes under tension). Finally, we also report on how the stress is transferred to the suspended specimen through the adhesive grips and determine the value of interfacial shear stress that is required for efficient axial loading in such a system.

cond-mat.mtrl-sci↗

arXiv2016

Stress Transfer Mechanisms at the Submicron Level for Graphene/Polymer Systems

The stress transfer mechanism from a polymer substrate to a nano-inclusion, such as a graphene flake, is of extreme interest for the production of effective nanocomposites. Previous work conducted mainly at the micron scale has shown that the intrinsic mechanism of stress transfer is shear at the interface. However, since the interfacial shear takes its maximum value at the very edge of the nano-inclusion it is of extreme interest to assess the effect of edge integrity upon axial stress transfer at the submicron scale. Here, we conduct a detailed Raman line mapping near the edges of a monolayer graphene flake which is simply supported onto an epoxy based photoresist (SU8)/poly(methyl methacrylate) (PMMA) matrix at steps as small as 100 nm. We show for the first time that, the distribution of axial strain (stress) along the flake deviates somewhat from the classical shear-lag prediction for a region of about 2 um from the edge. This behavior is mainly attributed to the presence of residual stresses, unintentional doping and/or edge effects (deviation from the equilibrium values of bond lengths and angles, as well as different edge chiralities). By considering a simple balance of shear-to-normal stresses at the interface we are able to directly convert the strain (stress) gradient to values of interfacial shear stress for all the applied tensile levels without assuming classical shear-lag behavior. For large flakes a maximum value of interfacial shear stress (ISS) of 0.4 MPa is obtained prior to flake slipping.

cond-mat.mtrl-sci↗

arXiv2016

Graphenes flakes under controlled biaxial deformation

Thin membranes, such as monolayer graphene of monoatomic thickness, are bound to exhibit lateral buckling under uniaxial tensile loading that impairs its mechanical behaviour. In this work, we have developed an experimental device to subject 2D materials to controlled equibiaxial strain on supported beams that can be flexed up or down to subject the material to either compression or tension, respectively. Using strain gauges in tandem with Raman spectroscopy measurements, we monitor the G and 2D phonon properties of graphene under biaxial strain and thus extract important information about the uptake of stress under these conditions. The experimental shift over strain for the G and 2D Raman peaks were found to be in the range of 62.3 \pm 5 cm^-1/%, and 148.2 \pm 6 cm^-1/%, respectively, for monolayer but also bilayer graphenes. The corresponding Gruneisen parameters for the G and 2D peaks were found to be between 1.97 \pm 0.15 and 2.86 \pm 0.12, respectively. These values agree reasonable well with those obtained from small-strain bubble-type experiments. The results presented are also backed up by classical and ab initio molecular dynamics simulations and excellent agreement of Γ-E2g shifts with strains and the Gruneisen parameter was observed.

cond-mat.mtrl-sci↗

arXiv2016

Failure Processes in Embedded Monolayer Graphene under Axial Compression

Exfoliated monolayer graphene flakes were embedded in a polymer matrix and loaded under axial compression. By monitoring the shifts of the 2D Raman phonons of rectangular flakes of various sizes under load, the critical strain to failure was determined. Prior to loading care was taken for the examined area of the flake to be free of residual stresses. The critical strain values for first failure were found to be independent of flake size at a mean value of -0.60 % corresponding to a yield stress of -6 GPa. By combining Euler mechanics with a Winkler approach, we show that unlike buckling in air, the presence of the polymer constraint results in graphene buckling at a fixed value of strain with an estimated wrinkle wavelength of the order of 1-2 nm. These results were compared with DFT computations performed on analogue coronene/ PMMA oligomers and a reasonable agreement was obtained.

cond-mat.mtrl-sci↗

arXiv2015

Long-lived discrete breathers in free-standing graphene

Intrinsic localized modes or discrete breathers are investigated by molecular dynamics simulations in free-standing graphene. Discrete breathers are generated either through thermal quenching of the graphene lattice or by proper initialization, with frequencies and lifetimes sensitively depending on the interatomic potential describing the carbon-carbon interaction. In the most realistic scenario, for which temperature-dependent molecular dynamics simulations in three dimension using a graphene-specific interatomic potential are performed, the breather lifetimes increase to hundreds of picoseconds even at relatively high temperatures. These lifetimes are much higher than those anticipated from earlier calculations, and may enable direct breather observation in Raman spectroscopy experiments.

cond-mat.mes-hall↗

arXiv2015

The deformation of wrinkled graphene

The deformation of monolayer graphene, produced by chemical vapor deposition (CVD), on a polyester film substrate has been investigated through the use of Raman spectroscopy. It has been found that the microstructure of the CVD graphene consists of a hexagonal array of islands of flat monolayer graphene separated by wrinkled material. During deformation, it was found that the rate of shift of the Raman 2D band wavenumber per unit strain was less than 25% of that of flat flakes of mechanically-exfoliated graphene, whereas the rate of band broadening per unit strain was about 75% of that of the exfoliated material. This unusual deformation behavior has been modeled in terms of mechanically-isolated graphene islands separated by the graphene wrinkles, with the strain distribution in each graphene island determined using shear lag analysis. The effect of the size and position of the Raman laser beam spot has also been incorporated in the model. The predictions fit well with the behavior observed experimentally for the Raman band shifts and broadening of the wrinkled CVD graphene. The effect of wrinkles upon the efficiency of graphene to reinforce nanocomposites is also discussed.

cond-mat.mtrl-sci↗