arXiv subjects

Kresten Yvind

Publications and source records attributed to Kresten Yvind.

At least 19 recordsLinked to original sources

arXiv2026

Harnessing thermo-optic dynamics for frequency-agile soliton microcombs

Dissipative Kerr soliton microcombs enable compact and scalable frequency comb sources for precision metrology, spectroscopy, communications and coherent LiDAR, where broad and reliable frequency tuning is essential. Thermo-optic response can support thermal locking during soliton operation, enabling resonance tracking and thereby extending the tuning range, albeit modestly. However, it also induces pronounced thermal instability during soliton initiation, hindering reliable access to this extended operating regime and limiting practical deployment in applications requiring frequency agility. Here we show that strong mode coupling reshapes the effective detuning trajectory governing soliton formation, establishing a distinct operating regime in which thermo-optic response is significantly reinforced and constructively harnessed. In this regime, soliton formation proceeds without the thermal instability inherent to conventional operation, enabling robust soliton generation in material platforms previously limited by strong thermal effects. Importantly, the enhanced thermo-optic response strengthens thermal locking during soliton operation, enabling more effective resonance tracking and substantially extending the tuning range. Leveraging this regime in AlGaAs-on-insulator multimode microresonators, we demonstrate soliton generation with a tuning range approaching 100 GHz at a pump power of 32 mW. The same mechanism further enables frequency-agile operation through direct pump-frequency tuning without auxiliary stabilization, allowing massively parallel chirped comb generation with more than 90 channels exhibiting frequency excursions exceeding 10 GHz. These results establish a general operating principle for transforming thermo-optic effects from a limiting factor into an active resource, enabling robust and frequency-agile integrated soliton microcombs.

physics.optics↗

arXiv2026

Nanobeam Laser Cavities with High Quality-factor and Near-Unity Outcoupling Efficiency

Cavities with high quality (Q) factor and small mode-volume are crucial to realize high-performance nanolasers suitable for optical interconnects. In this work, we propose a novel one-dimensional photonic crystal nanobeam cavity design with fins for controlled electrical injection into the active region. An effective optimization algorithm based on first-order perturbation theory of quasinormal modes is implemented and shown to significantly enhance the cavity quality factor. The one-dimensional geometry of the cavity lends itself to unidirectional coupling of the resonant mode into the waveguide by introducing asymmetry of the mirror. The resulting design is shown to achieve high extraction efficiencies ($>90\%$) while maintaining a high Q-factor ($>10 \cdot 10^3$). Through an analysis of the cavity's decay channels, we find that the introduced asymmetry induces unexpected interactions between the cavity's decay channels. Passive InP cavities are fabricated and experimentally characterized, demonstrating record-high quality factors exceeding $170 \cdot 10^3$ for designs without fins and up to $70 \cdot 10^3$ for designs with fins, confirming the efficacy of the optimization method and quality of the fabrication process.

physics.optics↗

arXiv2026

Broadband parametric amplification in AlGaAs-on-insulator nanowaveguides

Optical amplification is critical for optical signal transmission. While the emergence of erbium-doped fiber amplifiers has revolutionized optical communications in fiber-based systems, on-chip amplification remains essential for integrated optics. Nanoscale waveguides enhance nonlinearity by several orders of magnitude, making them promising candidates for optical parametric amplification. Using a pulsed pump at 1550 nm, broadband optical parametric amplification based on four-wave mixing is investigated in AlGaAs-on-insulator nanowaveguides. The strong nonlinearity enables an on-off gain as high as 58.4 dB. Meanwhile, the low propagation loss leads to a net on-chip gain of 56.2 dB. With further dispersion engineering, the net on-chip gain bandwidth extends beyond 415 nm, which is 2.3 times larger than previous reports pumped in the telecom band in integrated optics. These results represent the largest parametric gain and bandwidth reported for on-chip parametric amplifiers.

physics.optics↗

arXiv2026

Lasing from a Quantum-Dot-Like Buried Heterostructure in an InP Nanobeam Cavity

We report lasing from a lithographically defined buried heterostructure with an estimated lateral footprint of (107 nm)^2, embedded in an InP photonic-crystal nanobeam cavity. This represents the smallest laterally confined buried heterostructure gain region from which lasing has been observed. Despite etching of the active region during cavity definition and the associated risk of surface-related nonradiative recombination, optically pumped devices exhibit a clear lasing threshold and a narrow linewidth. By systematically varying the BH size, we investigate how the lasing threshold depends on the active volume under optical pumping. The estimated intrinsic threshold under ideal carrier injection is 57 nW, comparable to values reported for single quantum-dot nanolasers, highlighting the potential of quantum-dot-scale buried heterostructures as deterministic, scalable gain media for nanophotonic lasers.

physics.optics↗

arXiv2026

Thermally accessible broadband soliton microcombs in silicon carbide enabled by dynamic polarization control

Optical microcombs generated in high-Q microresonators are promising chip-scale light sources for applications ranging from optical communications to spectroscopy and metrology. However, thermo-optic instabilities remain a major obstacle to reliable soliton access. Self-cooling using auxiliary modes can stabilize the intracavity power, yet part of the power is continuously allocated to thermal compensation rather than comb generation, thereby limiting comb power and bandwidth. Here we propose a thermal compensation scheme based on dynamic polarization control. During soliton initiation, a fraction of the pump is coupled to an orthogonally polarized mode to provide self-cooling and ensure reliable soliton access. After soliton formation, polarization rotation and pump tuning transfer this cooling power to the comb-generating mode, enabling efficient single-soliton operation. Using this approach, we experimentally demonstrate a broadband 108-GHz-FSR single-soliton microcomb spanning over 450 nm, together with approximately 39% improvement in the 20-dB bandwidth and 60% increase in comb power relative to the static self-cooling configuration. This dynamic polarization-based thermal compensation enables efficient use of available laser power and provides a practical route to high-performance soliton microcombs in platforms with strong thermo-optic effects.

physics.optics↗

arXiv2025

Octave-spanning, deterministic single soliton generation in 4H-silicon carbide-on-insulator microring resonators

The miniaturization of self-referencing frequency comb systems enables emerging applications in metrology and spectroscopy. One major challenge in realizing the chip-scale self-referencing function is to generate octave-spanning soliton microcombs with low operation power. Accessing soliton states is also not trivial due to the thermal effect. Though an auxiliary laser was utilized to compensate for the thermal effect, deterministic single soliton generation is still elusive, especially for broadband operation. In this work, dispersion management is performed for a 4H-silicon carbide-on-insulator (SiCOI) multi-mode microring resonator, benefiting from the submicron-confinement waveguide layout. The fundamental transverse electric (TE) mode is engineered to anomalous dispersion for two dispersive waves generation over an octave span. While a higher order TE mode is engineered to normal dispersion to accommodate the auxiliary light for thermal compensation. The normal dispersion prevents modulation-instability Kerr comb generation, allowing for a large soliton existence range. We achieve microring resonators with Q up to 5.8 million and sub-milli-watt-threshold Kerr comb generation. Combining the dispersion-managed design and high Q device, we demonstrate the deterministic generation of a single soliton comb spanning beyond an octave with a low on-chip power of 60 mW. Our demonstration paves the way to realize chip-scale, turn-key, self-referenced frequency combs.

physics.optics↗

arXiv2025

Breaking the bandwidth-efficiency trade-off in soliton microcombs via mode coupling

Dissipative Kerr solitons in optical microresonators have emerged as a powerful tool for compact and coherent frequency comb generation. Advances in nanofabrication have allowed precise dispersion engineering, unlocking octave-spanning soliton combs that are essential for applications such as optical atomic clocks, frequency synthesis, precision spectroscopy, and astronomical spectrometer calibration. However, a key challenge hindering their practical deployment is the intrinsic bandwidth-efficiency trade-off: achieving broadband soliton generation requires large pump detuning, which suppresses power coupling and limits pump-to-comb conversion efficiencies to only a few percent. Recent efforts using pulsed pumping or coupled-resonator architectures have improved efficiency to several tens of percent, yet their bandwidths remain below one-tenth of an octave, inadequate for applications demanding wide spectral coverage. Here, we overcome this limitation by harnessing mode interactions between spatial modes within a single microresonator. The mode hybridization creates an additional power-transfer channel that supports large pump detuning while maintaining strong pump-to-resonator coupling, enabling broadband soliton formation at substantially reduced pump power. Using this approach, we demonstrate an octave-spanning soliton microcomb with a record pump-to-comb conversion efficiency exceeding 50%. These results resolve the fundamental bandwidth-efficiency dilemma in soliton microcombs and paves the way toward fully-integrated, high-efficiency, ultrabroad comb sources for next-generation photonic systems.

physics.optics↗

arXiv2025

Engineered mode coupling in high-Q microresonators enables deterministic low-repetition-rate soliton microcombs

Soliton optical frequency combs have become key enablers for a wide range of applications, including telecommunications, optical atomic clocks, ultrafast distance measurements, dual-comb spectroscopy, and astrophysical spectrometer calibration, many of which benefit from low repetition rates. However, achieving such low-repetition-rate soliton microcombs is nontrivial as long cavities require substantially higher pump power, which induces stronger thermal effects that, in turn, exacerbate thermal instability and complicate access to stable soliton states. The dual-mode pumping scheme, in which a continuous-wave pump couples to both the comb-generating mode and an auxiliary mode, has proven simple and effective for mitigating thermal instability and enabling thermally accessible soliton generation. Yet, in long-cavity devices, the standard bus-to-resonator coupling conditions for these two modes diverge substantially, resulting in insufficient pump coupling to the auxiliary mode, which makes dual-mode pumping particularly challenging for low-repetition-rate microcombs. In this work, we overcome this limitation by coupling the pump to the auxiliary mode via inter-modal coupling, which can be introduced in racetrack microresonators and engineered by tailoring the cavity bend design. We validate this approach in a high-Q (>$10^7$) silicon nitride microresonator and demonstrate thermally accessible, deterministic single-soliton generation at a repetition rate of 33 GHz. This work provides a simple and robust pathway for generating low-repetition-rate soliton microcombs.

physics.optics↗

arXiv2025

Carrier Transport in Electrically-Driven Photonic Crystal Membrane Lasers

We model carrier transport in photonic crystal lasers with lateral current injection through two-dimensional (2D) finite-volume simulations. Though such lasers can achieve ultra-low threshold currents, leakage paths reduce the carrier injection efficiency. The design is evaluated through its performance in terms of injection efficiency, internal quantum efficiency, and IV characteristics. Our model predicts the presence of unconventional leakage paths, explaining experimental observations of low injection efficiencies and enhanced spontaneous recombination at doping interfaces. Carrier leakage paths arise due to insufficient injection of holes into the active region, leading to an electric field that increases the energy barrier for electrons, thereby reducing the injection efficiency. The spatial profile of the p-doped region is shown to play a critical role in achieving a high electrical injection efficiency and low-threshold lasing. The model is an important step towards modelling and optimizing properties of 2D photonic crystal membrane lasers.

physics.optics↗

arXiv2025

Silicon Nitride Microresonator Raman Lasers

Silicon nitride (SiN) has emerged as a promising platform for integrated nonlinear photonics because of its low propagation loss, wide transparency window, and CMOS compatibility. Nonlinear processes arising from photon-electron interactions, such as Kerr frequency comb generation and second harmonic generation, have been extensively explored. In contrast, photon-phonon interaction-based nonlinearities, such as stimulated Raman scattering, remain largely unexplored in this integrated platform, despite their potential for broadband frequency conversion. Here, we demonstrate efficient Raman lasing in ultra-high-Q SiN microresonators by harnessing the strong intracavity field enhancement and engineering the optical mode to overlap with the Raman-active silica cladding. Through dispersion engineering and waveguide geometry optimization, we suppress competing Kerr nonlinearities while enhancing Raman gain, achieving lasing with sub-2 mW thresholds. We further investigate the trade-off between optical confinement and quality factor, revealing its impact on the overall nonlinear efficiency. Moreover, we also demonstrate broadband tunability of the Raman shift exceeding 120 inverse centimeters, enabled by the wide Raman gain spectrum of silica, offering new flexibility in designing integrated tunable Raman lasers. These results position SiN as a viable platform for chip-scale Raman lasers, expanding the nonlinear optics toolbox of the SiN platform and enabling compact, power-efficient light sources for applications in spectroscopy, optical communications, and quantum photonics.

physics.optics↗

arXiv2025

Efficient passivation of III-As(P) photonic interfaces

Surface effects can significantly impact the performance of nanophotonic and quantum photonic devices, especially as the device dimensions are reduced. In this work, we propose and investigate a novel approach to surface passivation to mitigate these challenges in photonic nanostructures with III-As(P) quantum wells defined by a dry etching process. The nanostructures are annealed under the phosphine (PH$_3$) ambient inside a metal-organic vapor phase epitaxy chamber to eliminate surface and subsurface defects induced during the dry etching and subsequent oxidation of the etched sidewalls. Moreover, encapsulation of the active material with a wider bandgap material allows for maintaining the band structure of the device, mitigating band bending effects. Our findings reveal an almost order of magnitude reduction in the surface recombination velocity from $2 \times 10^3 \, \mathrm{cm/s}$ for the PH$_3$ annealing compared to $1.5 \times 10^4 \, \mathrm{cm/s}$ for the non-passivated structures and $5 \times 10^3 \, \mathrm{cm/s}$ for the standard method based on (NH$_4$)$_2$S wet treatment followed by Al$_2$O$_3$ encapsulation. A further reduction to $5 \times 10^2 \, \mathrm{cm/s}$ is achieved for the InP-regrown samples. Additionally, we develop a model accounting for the impact of surface charges in the analysis of time-resolved photoluminescence curves and demonstrate that the proposed passivation method effectively reduces the surface charge density on the sidewalls of the studied quantum well-based photonic nanostructures.

physics.optics↗

arXiv2024

A nanolaser with extreme dielectric confinement

The interaction between light and matter can be enhanced by spatially concentrating the light field to boost the photon energy density and increasing the photon dwell time to prolong energy transfer between light and matter. Traditionally, strong spatial light localization has been achieved using plasmonics, which, despite its effectiveness, entails ohmic losses. Recent advances in nanostructured dielectrics offer an avenue for achieving strong light confinement without metallic losses. However, previous studies primarily focused on minimizing the optical mode volume without adequately addressing light-matter interactions. Here, we develop a nanolaser that simultaneously localizes the electromagnetic field and excited carriers within the same region of a dielectric nanobridge. This extreme dielectric confinement of both light and matter achieves a mode volume below the diffraction limit and a subwavelength carrier volume without the introduction of lateral quantum confinement, enabling continuous-wave lasing at room-temperature. Moreover, we observe a strong correlation between the mode field and carrier distribution, and unexpectedly, the enhanced mode field localization automatically leads to more pronounced carrier localization, promoting self-alignment of light and matter, which significantly reduces the laser threshold. We quantify the intensified light-matter interaction with a newly proposed interaction volume, which generalizes the concept of mode volume to a broad class of active media. Our work lays the ground for developing ultra-efficient optoelectronic devices by greatly enhancing light-matter interactions through advanced material nanostructuring.

physics.optics↗

arXiv2024

InAs/InP quantum dot based C-Band all-fiber plug-and-play triggered single-photon source integrated using micro-transfer printing

Fiber-based long-haul quantum communication would greatly benefit from a robust and deterministically integrated source of quantum state. Here, we report the design, fabrication, and optical characterization of InAs/InP quantum dots in the InP H1 point defect 2D photonic crystal cavity, integrated with the standard single-mode fiber using a micro-transfer printing technique. The device was placed in a compact cryocooler maintaining a cryogenic temperature of 15 K with single-photon emission characterized by $g^{(2)}(0)=0.14(14)$ and reliable and stable emission (intensity fluctuations given by a standard deviation $\sigma = 0.13$), so that an all-fiber based connection between two laboratory nodes through an open area was established and utilized for testing the quantum channel. In this way, we demonstrate a plug-and-play all-fiber single-photon source operating in the third telecom window, where standard telecommunication fiber networks can be used as a low-loss medium.

physics.optics↗

arXiv2024

Monolithic Integration of Sub-50 nm III-V Nano-Heterostructures on Si (001) for Telecom Photonics

The demand for advanced photonics technology is increasing rapidly, fueled by the necessity for high-performance and cost-effective optical information processing systems extending into the quantum domain. Silicon, benefiting from its mature fabrication processes, stands as an ideal platform. However, its inherent indirect bandgap leads to inefficient light emission. The integration of III-V materials has been proven essential to overcome this drawback. These materials are recognized for their efficient light emission and superior bandgap engineering capabilities, making them indispensable in photonics and beyond. Here, we present the monolithic integration of small-volume III-V nanoheterostructures with silicon via selective area epitaxy in the pyramidal openings etched in (100)-oriented silicon substrate. The precise positioning of the nano-heterostructures is achieved using electron beam lithography. Our atomic resolution imaging and chemical analysis confirms the epitaxial nature of InP growth, revealing well-defined heterointerfaces. Each structure incorporates an InAsP quantum dot-like active medium, and the correlation of the growth parameters with the nanoscale structure was analyzed using advanced electron microscopy. The eight-band k.p calculations demonstrate energy level quantization in three spatial dimensions. Optical characterization shows that heterostructure emission can be engineered to cover the entire telecom wavelength range. Consequently, these InAsP/InP nano-heterostructures could serve as a gain medium for silicon-based hybrid nano-lasers and nano-LEDs and quantum light sources in the telecom wavelength range.

physics.optics↗

arXiv2023

Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding

Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate the hybridization of InP and SOI chips, which allows for coupling single photons to the SOI chip interior, offering cost-effective scalability in setting up a multi-source environment for quantum photonic chips. We fabricate devices consisting of self-assembled InAs QDs embedded in the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing on devices generating light in the telecom C-band compatible with the low-loss optical fiber networks, we demonstrate the light coupling between InP and SOI platforms by observing photons outcoupled at the InP-made circular Bragg grating outcoupler fabricated at the end of an 80 $\mu$m-long Si WG, and at the cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon generation events exhibiting 80% single photon generation purity, we measure the photon number outcoupled at the cleaved facet of the Si WG. We estimate the directional on-chip photon coupling between the source and the Si WG to 5.1%.

physics.optics↗

arXiv2023

On-Demand Generation of Indistinguishable Photons in the Telecom C-Band using Quantum Dot Devices

Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the telecom C-band centered around 1550$\,$nm is ideal. The direct generation of QD-photons in this spectral range and with high quantum-optical quality, however, remained challenging. Here, we demonstrate the coherent on-demand generation of indistinguishable photons in the telecom C-band from single QD devices consisting of InAs/InP QD-mesa structures heterogeneously integrated with a metallic reflector on a silicon wafer. Using pulsed two-photon resonant excitation of the biexciton-exciton radiative cascade, we observe Rabi rotations up to pulse areas of $4\pi$ and a high single-photon purity in terms of $g^{(2)}(0)=0.005(1)$ and $0.015(1)$ for exciton and biexciton photons, respectively. Applying two independent experimental methods, based on fitting Rabi rotations in the emission intensity and performing photon cross-correlation measurements, we consistently obtain preparation fidelities at the $\pi$-pulse exceeding 80$\%$. Finally, performing Hong-Ou-Mandel-type two-photon interference experiments we obtain a photon-indistinguishability of the full photon wave packet of up to $35(3)\%$, representing a significant advancement in the photon-indistinguishability of single photons emitted directly in the telecom C-band.

quant-ph↗

arXiv2023

High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band

Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic integrated devices operating at C-band wavelengths based on epitaxial semiconductor quantum dots. Our technique enables the deterministic integration of single pre-selected quantum emitters into microcavities based on circular Bragg gratings. Respective devices feature the triggered generation of single photons with ultra-high purity and record-high photon indistinguishability. Further improvements in yield and coherence properties will pave the way for implementing single-photon non-linear devices and advanced quantum networks at telecom wavelengths.

quant-ph↗

arXiv2023

Fine-tunable near-critical Stranski-Krastanov growth of InAs/InP quantum dots

Emerging applications of self-assembled semiconductor quantum dot (QD)-based nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm) present challenges in terms of controlled synthesis of their low-density ensembles, critical for device processing with an isolated QD. This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailoring the conditions of Stranski-Krastanow growth. We demonstrate that in the near-critical growth regime, the density of quantum dots can be tuned between $10^7$ and $10^{10} cm^{-2}$. Furthermore, employing both experimental and modeling approaches, we show that the size (and therefore the emission wavelength) of InAs nanoislands on InP can be controlled independently from their surface density. Finally, we demonstrate that our growth method gives low-density ensembles resulting in well-isolated QD-originated emission lines in the telecom C-band.

cond-mat.mes-hall↗