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Kresten Yvind

Publications and source records attributed to Kresten Yvind.

At least 37 records · Page 2Linked to original sources

Post-2000 Nonlinear Optical Materials and Measurements: Data Tables and Best Practices

In its 60 years of existence, the field of nonlinear optics has gained momentum especially over the past two decades thanks to major breakthroughs in material science and technology. In this article, we present a new set of data tables listing nonlinear-optical properties for different material categories as reported in the literature since 2000. The papers included in the data tables are representative experimental works on bulk materials, solvents, 0D-1D-2D materials, metamaterials, fiber waveguiding materials, on-chip waveguiding materials, hybrid waveguiding systems, and materials suitable for nonlinear optics at THz frequencies. In addition to the data tables, we also provide best practices for performing and reporting nonlinear-optical experiments. These best practices underpin the selection process that was used for including papers in the tables. While the tables indeed show strong advancements in the field over the past two decades, we encourage the nonlinear-optics community to implement the identified best practices in future works. This will allow a more adequate comparison, interpretation and use of the published parameters, and as such further stimulate the overall progress in nonlinear-optical science and applications.

physics.optics↗

Fine-tunable near-critical Stranski-Krastanov growth of InAs/InP quantum dots

Emerging applications of self-assembled semiconductor quantum dot (QD)-based nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm) present challenges in terms of controlled synthesis of their low-density ensembles, critical for device processing with an isolated QD. This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailoring the conditions of Stranski-Krastanow growth. We demonstrate that in the near-critical growth regime, the density of quantum dots can be tuned between $10^7$ and $10^{10} cm^{-2}$. Furthermore, employing both experimental and modeling approaches, we show that the size (and therefore the emission wavelength) of InAs nanoislands on InP can be controlled independently from their surface density. Finally, we demonstrate that our growth method gives low-density ensembles resulting in well-isolated QD-originated emission lines in the telecom C-band.

cond-mat.mes-hall↗

Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold

Light sources with ultra-low energy consumption and high performance are required to realize optical interconnects for on-chip communication. Photonic crystal (PhC) nanocavity lasers are one of the most promising candidates to fill this role. In this work, we demonstrate an electrically-driven PhC nanolaser with an ultra-low threshold current of 10.2 μA emitting at 1540 nm and operated at room temperature. The lasers are InP-based bonded on Si and comprise a buried heterostructure active region and lateral p-i-n junction. The static characteristics and the thermal properties of the lasers have been characterized. The effect of disorder and p-doping absorption on the Q-factor of passive cavities was studied. We also investigate the leakage current due to the lateral p-i-n geometry by comparing the optical and electrical pumping schemes.

physics.optics↗

Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si

Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emitting photons in the telecom bands ($1460-1625$ nm) allow for heterogeneous integration with Si. In this work, we report on a novel, robust, and industry-compatible approach for achieving single-photon emission from InAs/InP QDs heterogeneously integrated with a Si substrate. As a proof of concept, we demonstrate a simple vertical emitting device, employing a metallic mirror beneath the QD emitter, and experimentally obtained photon extraction efficiencies of $\sim10\%$. Nevertheless, the figures of merit of our structures are comparable with values previously only achieved for QDs emitting at shorter wavelength or by applying technically demanding fabrication processes. Our architecture and the simple fabrication procedure allows for the demonstration of a single-photon generation with purity $\mathcal{P}>98\%$ at the liquid helium temperature and $\mathcal{P}=75\%$ at $80$ K.

cond-mat.mes-hall↗

Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth

We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and droplet-mediated growths and combines the advantages of the two techniques. Using this approach, we obtain organized arrays of high crystalline quality InP insertions into (100) oriented Si substrates. Our detailed structural, morphological and optical studies reveal the conditions leading to defect formation. These conditions are then eliminated to optimize the process for obtaining dislocation-free InP nanostructures grown directly on Si and buried below the top surface. The PL signal from these structures exhibits a narrow peak at the InP bandgap energy. The fundamental aspects of the growth are studied by modeling the InP nucleation process. The model is fitted by our x-ray diffraction measurements and correlates well with the results of our transmission electron microscopy and optical investigations. Our method constitutes a new approach for the monolithic integration of active III-V material into Si platform and opens up new opportunities in active Si photonics.

physics.app-ph↗

Squeezing of intensity noise in nanolasers and nanoLEDs

The intensity noise of nanolasers and nanoLEDs is analyzed for conventional and quiet pumping of electrons into the active region. It is shown that nanoLEDs with Purcell-enhanced emission rates, enabled by extreme dielectric confinement, may be excellent sources of intensity-squeezed light within a bandwidth of several gigahertz. The physics of intensity squeezing is elucidated and it is shown that the parameter dependence can be explained by an effective Fano factor.

physics.optics↗

Tunable MEMS VCSEL on Silicon substrate

We present design, fabrication and characterization of a MEMS VCSEL which utilizes a silicon-on-insulator wafer for the microelectromechanical system and encapsulates the MEMS by direct InP wafer bonding, which improves the protection and control of the tuning element. This procedure enables a more robust fabrication, a larger free spectral range and facilitates bidirectional tuning of the MEMS element. The MEMS VCSEL device uses a high contrast grating mirror on a MEMS stage as the bottom mirror, a wafer bonded InP with quantum wells for amplification and a deposited dielectric DBR as the top mirror. A 40 nm tuning range and a mechanical resonance frequency in excess of 2 MHz are demonstrated.

physics.app-ph↗

Ultra-compact graphene plasmonic photodetector with the bandwidth over 110GHz

Graphene-based photodetectors, taking advantage of high carrier mobility and broadband absorption in graphene, have recently experienced rapid development. However, their performances with respect to the responsivity and bandwidth are still limited by either weak light-graphene interaction or large resistance-capacitance product. Here, we demonstrate a waveguide coupled integrated graphene plasmonic photodetector on the silicon-on-insulator platform. Benefiting from plasmonic enhanced graphene-light interactions and subwavelength confinement of the optical energy, we present a small-footprint graphene-plasmonic photodetector with bandwidth beyond 110GHz and intrinsic responsivity of 360mA/W. Attributed to the unique electronic bandstructure of graphene and its ultra-broadband absorption, the operational wavelength range extending beyond mid-infrared, and possibly further, can be anticipated. Our results show that the combination of graphene with plasmonic devices has great potential to realize ultra-compact and high-speed optoelectronic devices for graphene-based optical interconnects.

physics.app-ph↗

Comparison of processing-induced deformations of InP bonded to Si determined by e-beam metrology: direct vs. adhesive bonding

In this paper, we employ an electron beam writer as metrology tool to investigate distortion of an exposed pattern of alignment marks in heterogeneously bonded InP on silicon. After experimental study of three different bonding and processing configurations which represent typical on-chip photonic device fabrication conditions, the smallest degree of linearly-corrected distortion errors is obtained for the directly bonded wafer, with the alignment marks both formed and measured on the same InP layer side after bonding (equivalent to single-sided processing of the bonded layer). Under these conditions, multilayer exposure alignment accuracy is limited by the InP layer deformation after the initial pattern exposure mainly due to the mechanical wafer clamping in the e-beam cassette. Bonding-induced InP layer deformations dominate in cases of direct and BCB bonding when the alignment marks are formed on one InP wafer side, and measured after bonding and substrate removal from another (equivalent to double-sided processing of the bonded layer). The findings of this paper provide valuable insight into the origin of the multilayer exposure misalignment errors for the bonded III-V on Si wafers, and identify important measures that need to be taken to optimize the fabrication procedures for demonstration of efficient and high-performance on-chip photonic integrated devices.

physics.app-ph↗

Synthesis and systematic optical investigation of selective area droplet epitaxy of InAs/InP quantum dots assisted by block copolymer lithography

We report on the systematic investigation of the optical properties of a selectively grown quantum dot gain material assisted by block-copolymer lithography for potential applications in active optical devices operating in the wavelength range around 1.55 um and above. We investigated a new type of diblock copolymer PS-b-PDMS (polystyrene-block-polydimethylsiloxane) for the fabrication of silicon oxycarbide hard mask for selective area epitaxy of InAs/InP quantum dots. An array of InAs/InP quantum dots was selectively grown via droplet epitaxy. Our detailed investigation of the quantum dot carrier dynamics in the 10-300 K temperature range indicates the presence of a density of states located within the InP bandgap in the vicinity of quantum dots. Those defects have a substantial impact on the optical properties of quantum dots.

cond-mat.mtrl-sci↗

Demonstration of a self-pulsing photonic crystal Fano laser

Semiconductor lasers in use today rely on mirrors based on the reflection at a cleaved facet or Bragg reflection from a periodic stack of layers. Here, we demonstrate an ultra-small laser with a mirror based on the Fano resonance between a continuum of waveguide modes and the discrete resonance of a nanocavity. The Fano resonance leads to unique laser characteristics. Since the Fano mirror is very narrow-band compared to conventional lasers, the laser is single-mode and in particular, it can be modulated via the mirror. We show, experimentally and theoretically, that nonlinearities in the mirror may even promote the generation of a self-sustained train of pulses at gigahertz frequencies, an effect that was previously only observed in macroscopic lasers. Such a source is of interest for a number of applications within integrated photonics.

physics.optics↗

AlGaAs-On-Insulator Nonlinear Photonics

The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications including high speed optical signal processing, on-chip multi-wavelength lasers, metrology, molecular spectroscopy, and quantum information science. Aluminium gallium arsenide (AlGaAs) exhibits very high material nonlinearity and low nonlinear loss when operated below half its bandgap energy. However, difficulties in device processing and low device effective nonlinearity made Kerr frequency comb generation elusive. Here, we demonstrate AlGaAs-on-insulator as a nonlinear platform at telecom wavelengths. Using newly developed fabrication processes, we show high-quality-factor (Q>100,000) micro-resonators with integrated bus waveguides in a planar circuit where optical parametric oscillation is achieved with a record low threshold power of 3 mW and a frequency comb spanning 350 nm is obtained. Our demonstration shows the huge potential of the AlGaAs-on-insulator platform in integrated nonlinear photonics.

physics.optics↗

Threshold Characteristics of Slow-Light Photonic Crystal Lasers

The threshold properties of photonic crystal quantum dot lasers operating in the slow-light regime are investigated experimentally and theoretically. Measurements show that, in contrast to conventional lasers, the threshold gain attains a minimum value for a specific cavity length. The experimental results are explained by an analytical theory for the laser threshold that takes into account the effects of slow-light and random disorder due to unavoidable fabrication imperfections. Longer lasers are found to operate deeper into the slow-light region, leading to a trade-off between slow-light induced reduction of the mirror loss and slow-light enhancement of disorder-induced losses.

physics.optics↗

Effective electro-optical modulation with high extinction ratio by a graphene-silicon microring resonator

Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through tuning of Fermi level enables electro-optical modulation, optical-optical switching, and other optoelectronics applications. However, achieving a high modulation depth remains a challenge because of the modest graphene-light interaction in the graphene-silicon devices, typically, utilizing only a monolayer or few layers of graphene. Here, we comprehensively study the interaction between graphene and a microring resonator, and its influence on the optical modulation depth. We demonstrate graphene-silicon microring devices showing a high modulation depth of 12.5 dB with a relatively low bias voltage of 8.8 V. On-off electro-optical switching with an extinction ratio of 3.8 dB is successfully demonstrated by applying a square-waveform with a 4 V peak-to-peak voltage.

physics.optics↗

Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS-compatible processes. It has the potential for ultrahigh-speed operation beyond 100 Gbit/s and features a novel mechanism for transverse mode control.

physics.optics↗

Nonreciprocal transmission in a photonic-crystal Fano structure enabled by symmetry breaking

Nanostructures that feature nonreciprocal light transmission are highly desirable building blocks for realizing photonic integrated circuits. Here, a simple and ultra-compact photonic-crystal structure, where a waveguide is coupled to a single nanocavity, is proposed and experimentally demonstrated, showing very efficient optical diode functionality. The key novelty of the structure is the use of a Fano resonance in combination with spatial symmetry breaking and cavity enhanced material nonlinearities to realize non-reciprocal propagation effects at ultra-low power and with a good wavelength tunability. The nonlinearity of the device relies on ultrafast carrier dynamics, rather than the thermal effects usually considered, allowing the demonstration of nonreciprocal operation at a bit-rate of 10 Gbit/s with a low energy consumption of 4.5 fJ/bit.

physics.optics↗

Nonlinear switching dynamics in a photonic-crystal nanocavity

We measure the nonlinear switching dynamics of an InP photonic crystal nanocavity for different pulse energies and wavelengths relative to the cavity resonance and observe saturation of the switching contrast and broadening of the switching window. The effects are analyzed by comparison with nonlinear coupled mode theory and explained in terms of large dynamical variations of the cavity resonance. The results are important for applications in optical signal processing and provide insight into the nonlinear optical processes that govern the dynamics of the refractive index and the absorption.

physics.optics↗

Slow-light enhanced gain in active photonic crystal waveguides

Slow light is a fascinating physical effect, raising fundamental questions related to our understanding of light-matter interactions as well as offering new possibilities for photonic devices. From the first demonstrations of slow light propagation in ultra-cold atomic gasses, solid-state Ruby and photonic crystal structures, focus has shifted to applications, with slow light offering the ability to enhance and control light-matter interactions. The demonstration of tuneable delay lines, enhanced nonlinearities and spontaneous emission, enlarged spectral sensitivity and increased phase shifts illustrate the possibilities enabled by slow light propagation, with microwave photonics emerging as one of the promising applications. Here, we demonstrate that slow light can be used to control and increase the gain coefficient of an active semiconductor waveguide. The effect was theoretically predicted but not yet experimentally demonstrated. These results show a route towards realizing ultra-compact optical amplifiers for linear and nonlinear applications in integrated photonics and prompts further research into the rich physics of such structures.

physics.optics↗