arXiv subjects

Kristof Moors

Publications and source records attributed to Kristof Moors.

At least 19 recordsLinked to original sources

arXiv2026

SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography

The realization of large-scale silicon quantum processors requires spin qubits compatible with advanced semiconductor manufacturing technologies, demanding lithographic processes that combine nanometer-scale precision with exceptional uniformity. Although the highest-performing silicon spin qubits demonstrated to date have relied on electron-beam (e-beam) lithography, its serial exposure process limits reproducibility studies and wafer-scale fabrication. Here, we demonstrate high-performance silicon metal-oxide-semiconductor (SiMOS) spin qubits fabricated using extreme-ultraviolet (EUV) lithography in a 300 mm semiconductor pilot line. We report wafer-scale quantum-dot uniformity metrics, including 100 % room-temperature gate-to-gate leakage yield and sub-nanometer control of critical gate dimensions. We characterize four double-dot systems realized in two triple-quantum-dot devices. Gate set tomography (GST) reveals consistently high fidelities across all four systems, with values up to 99.8 % for SPAM, 99.9 % for single-qubit gates, and 99.1 % for two-qubit gates. The devices exhibit highly reproducible exchange turn-on characteristics of 10-13 dec/V, indicating high fabrication uniformity enabled by EUV patterning. These results establish EUV lithography as a viable manufacturing technology for quantum processors based on high-fidelity SiMOS spin qubits.

cond-mat.mes-hall↗

arXiv2026

Fidelity Analysis of Adiabatically Driven Donor Spins as Two-Qubit and Ququart Systems

Donor spin systems host a native Hilbert space whose dimension exceeds that of a qubit, meaning they can be used as qudits. Here we study a \ce{Si{:}P} donor spin system through leakage-aware randomized benchmarking (RB) of native ququart $\mathcal{C}_4$ and encoded two-qubit $\mathcal{C}_2^{\otimes 2}$ Clifford groups. We implement adiabatic ramps to operate electron dipole spin resonance (EDSR) pulses at the ionization point, where the electron is shared halfway between the donor and the interface, and to operate electron spin resonance (ESR) pulses near the interface, motivated by the sensitivity of the effective magnetic field to charge noise at the ionization point. By placing the electron near the ionization point only during EDSR control and using sufficiently long displacement ramp durations, leakage outside the computational basis is strongly suppressed, which is crucial for optimized qudit control. We find in our analysis based on leakage RB that $\mathcal{C}_4$ consistently achieves $\sim 40$--$50\%$ lower (lower-bound) error rates $\varepsilon^{\mathrm{LB}}_\mathrm{PT}$ with respect to $\mathcal{C}_2^{\otimes 2}$, due to its reduced circuit complexity. These results indicate that donor spin qudits benefit from genuine qudit operation as opposed to imposed encoded qubit operation.

quant-ph↗

arXiv2026

Understanding oxide-thickness-dependent variability in dense Si-MOS quantum dot arrays

Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness influences uniformity in dense two dimensional silicon quantum dot arrays. Using a 7 x 7 array fabricated in a 300 mm CMOS-process patterned by EUV lithography, we statistically characterize 392 quantum dots across four different oxide thicknesses. The threshold voltages, capacitances, lever arms, and charging energies are extracted using parallel row based measurements and we identify an optimal SiO2 thickness of 17 nm that minimizes threshold voltage variability below 63 mV standard deviation. Our observations illustrate how multiple sources of disorder can introduce competing oxide-thickness dependencies, resulting in non-monotonic trends. These results provide key design guidelines for dense, scalable silicon spin qubit architectures.

quant-ph↗

arXiv2026

Modeling of flopping-mode spin qubits: beyond the two-site model

We present a flexible modeling framework for flopping-mode spin qubits that captures the spatial structure of the double-well confinement and magnetic-field-gradient profile going beyond conventional low-energy descriptions. By using this approach, we simulate electric dipole spin resonance-based single-qubit control and evaluate the frequency and spectral purity of the Rabi oscillations across different parameter regimes. Our analysis reveals a fundamental tradeoff between fast electrical driving and clean single-mode Rabi oscillations, and demonstrates that the standard two-site low-energy approximation can overestimate the Rabi frequency by up to $\sim$ 20\% in certain parameter regimes. We also investigate two-qubit control by considering two capacitively coupled flopping-mode qubits and derive the corresponding exchange interaction with an appropriately restricted configuration interaction treatment. Our approach reveals the interplay between the spatial profile of the double-well confinement, magnetic field gradient, and Coulomb interaction, which together govern the effective exchange coupling strength. Our spatially resolved modelling framework enables efficient exploration of double-well confinement parameters and magnetic field gradient profiles, enabling a transparent mapping from spatial device properties to flopping-mode qubit parameters and quality metrics.

cond-mat.mes-hall↗

arXiv2025

Proximity-induced superconductivity in magnetic topological insulator films

Inducing superconducting correlations in magnetic topological insulators (MTIs) is emerging as a promising route toward the realization of topological superconductivity and Majorana modes. Here, we develop an analytical model for the proximity effect induced by an ordinary s-wave superconductor (SC) placed on top of a MTI thin film with finite thickness. Using a perturbative approach with respect to the electron tunneling between MTI and SC, we derive the leading-order correction to the anomalous Green's function and evaluate the position-dependent induced pairing as a function of all the system parameters. This framework allows us to resolve the spatial, spin, and momentum structure of the induced superconducting order parameter. In particular, we derive an explicit expression for the decay length of the pairing amplitude at the $k_x=k_y=0$ point, and show that increasing magnetization enhances the spin-polarized triplet components and the p-wave contributions of the anomalous Green's function. These findings highlight the interplay between topology, magnetism, and superconductivity in MTI films, providing analytical insight into the emergence of unconventional pairing symmetries relevant for the realization of Majorana modes in finite geometries.

cond-mat.supr-con↗

arXiv2025

Optimization of Floquet fluxonium qubits with commensurable two-tone drives

Protecting superconducting qubits from low-frequency noise by operating them on dynamical sweet-spot manifolds has proven to be a promising setup, theoretically as well as experimentally . These dynamical sweet spots are induced by an externally applied Floquet drive, and various drive forms have been studied in different types of qubits. In this work we study the effects of using two-tone drives on the applied magnetic flux of the form $\phi_{ac}(t)=\phi_m\cos(m\omega_\mathrm{d} t)+\phi_n\cos(n\omega_\mathrm{d} t+\varphi)$, where $m,n \in \mathbb{N}_{>0}$, on the coherence times of fluxonium qubits. The optimal drive parameters are found through analysis using perturbation theory and numerical calculations. We show that this type of drive allows for more tunability of the quasi-energy spectrum, creating higher and wider peaks of the dephasing time without affecting the relaxation times too strongly. Further we show that the second commensurable drive tone can be used to implement an improved phase gate compared to implementations with a single tone, supported by Monte Carlo simulations.

cond-mat.mes-hall↗

arXiv2025

Current Conservation in the Self-Consistent Josephson Junction

Conventional treatments of Josephson junctions (JJs) are typically not current-conserving. In the mean-field BCS theory, current conservation is only guaranteed if the superconducting order parameter is treated self-consistently. We show that this requirement has significant consequences for the current-phase relation (CPR) in certain regimes, where the current density in the superconducting leads is non-negligible. To this end, we introduce a numerical method for the self-consistent treatment of the BdG equations with current conservation for quasi-1D superconductor-normal (metal)-superconductor (SNS) JJs. Our model incorporates a phase gradient of the order parameter in the leads, which is set to match the Josephson current through the weak link. We compare our method to standard, non-current-conserving approaches by calculating the CPR for SNS JJs while varying lengths and gate voltages controlling the normal metal. We show that current conservation has significant implications for the Josephson harmonics and can weaken or even reverse forward skewness of the CPR.

cond-mat.supr-con↗

arXiv2025

Robust quantum anomalous Hall effect with spatially uncorrelated disorder

In magnetic topological insulators, a phase transition between a quantum anomalous Hall (QAH) and an Anderson localization phase can be triggered by the rotation of an applied magnetic field. Without the scattering paths along magnetic domains, this phase transition is governed by scattering induced by nonmagnetic disorder. We show that the QAH phase is strikingly robust in the presence of spatially uncorrelated disorder. The robustness is attributed to the quantum confinement induced by the short correlation length of the disorder. The critical behavior near the phase transition suggests a picture distinct from quantum percolation. This provides new insights on the robustness of the QAH effect in magnetic topological insulators with atomic defects, impurities, and dopants.

cond-mat.mes-hall↗

arXiv2025

Optimizing proximitized magnetic topological insulator nanoribbons for Majorana bound states

Heterostructures comprised of a magnetic topological insulator (MTI) placed in the proximity of an $s$-wave superconductor have emerged as a platform for the practical realization of Majorana bound states (MBSs). More specifically, it has been theoretically predicted that MBS can appear in proximitized MTI nanoribbons (PNRs) in the quantum anomalous Hall regime. As with all MBS platforms, disorder and device imperfections can be detrimental to the formation of robust and well-separated MBSs that are suitable for fusion and braiding experiments. Here, we identify the optimal conditions for obtaining a topological superconducting gap that is robust against disorder, with spatially separated stable MBSs in PNRs, and introduce a figure of merit that encompasses these conditions. Particular attention is given to the thin-film limit of magnetic topological insulators (MTIs), where the hybridization of the surface states cannot be neglected, and to the role of electron-hole asymmetry in the low-energy physics of the system. Based on our numerical results, we find that (1) MTI thin films that are normal (rather than quantum spin Hall) insulators for zero magnetization are favorable, (2) strong electron-hole asymmetry causes the stability and robustness of MBS to be very different for chemical potentials above or below the Dirac point, and (3) the magnetization strength should preferably be comparable to the hybridization or confinement energy of the surface states, whichever is largest.

cond-mat.mes-hall↗

arXiv2025

Exploring binary intermetallics for advanced interconnect applications using ab initio simulations

The challenge of increasing copper (Cu) resistivity with diminishing Cu interconnect dimensions in complementary metal-oxide-semiconductor (CMOS) transistors, along with the imperative for efficient electron transport paths to fulfill scaling requirements in interconnects is significant. First-principles electronic structures calculations based on density functional theory have been performed to evaluate the potential scalability of some Cu, Al, Ru and Mo based binary alloys to replace Cu. We evaluate the expected sensitivity of the resistivity of these binary alloys to reduced line dimensions with a figure of merit that is based on generalized finite-temperature transport tensors. These transport tensors allow for a straightforward comparison between highly anisotropic intermetallics with given transport directions and Cu, and are evaluated together with their resistance to electromigration. Based on the figure-of-merit analysis, we identify several aluminides that show potential to outperform Cu at reduced interconnect dimensions in terms of their electronic transport and reliability properties.

cond-mat.mtrl-sci↗

arXiv2025

Frustrated Frustration of Arrays with Four-Terminal Nb-Pt-Nb Josephson Junctions

We study the frustration pattern of a square lattice with in-situ fabricated Nb-Pt-Nb four-terminal Josephson junctions. The four-terminal geometry gives rise to a checker board pattern of alternating fluxes f, f' piercing the plaquettes, which stabilizes the Berezinskii-Kosterlitz-Thouless transition even at irrational flux quanta per plaquette, due to an unequal repartition of integer flux sum f+f' into alternating plaquettes. This type of frustrated frustration manifests as a beating pattern of the dc resistance, with state configurations at the resistance dips gradually changing between the conventional zero-flux and half-flux states. Hence, the four-terminal Josephson junction array offers a promising platform to study previously unexplored flux and vortex configurations, and provides an estimate on the spatial expansion of the four-terminal Josephson junction central weak link area.

cond-mat.supr-con↗

arXiv2025

Aharonov-Bohm and Altshuler-Aronov-Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires

The realization of various qubit systems based on high-quality hybrid superconducting quantum devices, is often achieved using semiconductor nanowires. For such hybrid devices, a good coupling between the superconductor and the conducting states in the semiconductor wire is crucial. GaAs/InAs core/shell nanowires with an insulating core, and a conductive InAs shell fulfill this requirement, since the electronic states are strongly confined near the surface. However, maintaining a good crystal quality in the conducting shell is a challenge for this type of nanowire. In this work, we present phase-pure zincblende GaAs/InAs core/shell nanowires and analyze their low-temperature magnetotransport properties. We observe pronounced magnetic flux quantum periodic oscillations, which can be attributed to a combination of Aharonov-Bohm and Altshuler-Aronov-Spivak oscillations. From the gate and temperature dependence of the conductance oscillations, as well as from supporting theoretical transport calculations, we conclude that the conducting states in the shell are in the quasi-ballistic transport regime, with few scattering centers, but nevertheless leading to an Altshuler-Aronov-Spivak correction that dominates at small magnetic field strengths. Our results demonstrate that phase-pure zincblende GaAs/InAs core/shell nanowires represent a very promising alternative semiconductor nanowire-based platform for hybrid quantum devices.

cond-mat.mes-hall↗

arXiv2025

Distributed Current Injection into a One-Dimensional Ballistic Edge Channel

We generalize Landauer's theory of ballistic transport in a one-dimensional (1D) conductor to situations where charge carrier injection and extraction are not any more confined to electrodes at either end of the channel, but may occur along its whole length. This type of distributed injection is expected to occur from the two-dimensional (2D) bulk of, e.g., a quantum spin (or anomalous) Hall insulator to its topologically protected edge states. We apply our conceptual solution to the case of two metal electrodes contacting the 2D bulk, enabling us to derive criteria that discriminate ballistic from resistive edge channels in multi-terminal transport experiments.

cond-mat.mes-hall↗

arXiv2024

Topological properties of finite-size heterostructures of magnetic topological insulators and superconductors

Heterostructures of magnetic topological insulators (MTIs) and superconductors (SCs) in two-dimensional (2D) slab and one-dimensional (1D) nanoribbon geometries have been predicted to host, respectively, chiral Majorana edge states (CMESs) and Majorana bound states (MBSs). We study the topological properties of such MTI/SC heterostructures upon variation of the geometry from wide slabs to quasi-1D nanoribbon systems and as a function of the chemical potential, the magnetic doping, and the induced superconducting pairing potential. To do so, we construct effective symmetry-constrained low-energy Hamiltonians accounting for the real-space confinement. For a nanoribbon geometry with finite width and length, we observe different phases characterized by CMESs, MBSs, as well as coexisting CMESs and MBSs, as the chemical potential, the magnetic doping and/or the width are varied.

cond-mat.mes-hall↗

arXiv2024

Low-energy modeling of three-dimensional topological insulator nanostructures

We develop an accurate nanoelectronic modeling approach for realistic three-dimensional topological insulator nanostructures and investigate their low-energy surface-state spectrum. Starting from the commonly considered four-band $\boldsymbol{\mathrm{k\cdot p}}$ bulk model Hamiltonian for the Bi$_2$Se$_3$ family of topological insulators, we derive new parameter sets for Bi$_2$Se$_3$, Bi$_2$Te$_3$ and Sb$_2$Te$_3$. We consider a fitting strategy applied to \emph{ab initio} band structures around the $\Gamma$ point that ensures a quantitatively accurate description of the low-energy bulk and surface states, while avoiding the appearance of unphysical low-energy states at higher momenta, something that is not guaranteed by the commonly considered perturbative approach. We analyze the effects that arise in the low-energy spectrum of topological surface states due to band anisotropy and electron-hole asymmetry, yielding Dirac surface states that naturally localize on different side facets. In the thin-film limit, when surface states hybridize through the bulk, we resort to a thin-film model and derive thickness-dependent model parameters from \emph{ab initio} calculations that show good agreement with experimentally resolved band structures, unlike the bulk model that neglects relevant many-body effects in this regime. Our versatile modeling approach offers a reliable starting point for accurate simulations of realistic topological material-based nanoelectronic devices.

cond-mat.mes-hall↗

arXiv2024

Interfaces of nodal-line semimetals: drum states, transport and refraction

We study transport through interfaces in topological nodal-line semimetals, focusing on two geometries: a single interface between two large samples, one nodal-line semimetal and one metal, and an infinite nodal-line semimetal slab in between two metallic regions. We investigate the dependence of the spectra on the boundary conditions, showing how they affect the surface states and the band dispersion. We find a set of drum states, arising from the hybridization of the drumhead states on opposite surfaces at finite slab width, and describe their signatures in the transport properties of a clean sample. Finally, we compute the electronic trajectories in the ballistic regime and show that there is a series of resonant angles that ensure perfect transmission. We also show how the current density profile acquires an inhomogeneous distribution in the radial direction.

cond-mat.mes-hall↗

arXiv2023

In-plane magnetic field driven conductance modulations in topological insulator kinks

We present low-temperature magnetoconductance measurements on Bi$_{1.5}$Sb$_{0.5}$Te$_{1.8}$Se$_{1.2}$ kinks with ribbon-shaped legs. The conductance displays a clear dependence on the in-plane magnetic field orientation. The conductance modulation is consistent with orbital effect-driven trapping of the topological surface states on different side facets of the legs of the kink, which affects their transmission across the kink. This magnetic field-driven trapping and conductance pattern can be explained with a semiclassical picture and is supported by quantum transport simulations. The interpretation is corroborated by varying the angle of the kink and analyzing the temperature dependence of the observed magnetoconductance pattern, indicating the importance of phase coherence along the cross section perimeter of the kink legs.

cond-mat.mes-hall↗

arXiv2023

Induced superconducting correlations in the quantum anomalous Hall insulator

Inducing Cooper pairing in a thin ferromagnetic topological insulator in the quantum anomalous Hall state (called quantum anomalous Hall insulator, QAHI) is a promising way to realize topological superconductivity with associated chiral Majorana edge states. However, finding evidence of superconducting proximity effect in a QAHI has proven to be a considerable challenge due to inherent experimental difficulties. Here we report the observation of crossed Andreev reflection (CAR) across a narrow superconducting Nb electrode contacting the chiral edge state of a QAHI, evinced by a negative nonlocal voltage measured downstream from the grounded Nb electrode. This is an unambiguous signature of induced superconducting pair correlation in the chiral edge state. Our theoretical analysis demonstrates that CAR processes of the chiral edge are not strongly dependent on the nature of the superconductivity that mediates them. Nevertheless, the characteristic length of the CAR process is found to be much longer than the superconducting correlation length in Nb, which suggests that the CAR is in fact mediated by superconductivity induced on the QAHI surface. The approach and results presented here provide a foundation for future studies of topological superconductivity and Majorana physics, as well as for the search for non-Abelian zero modes.

cond-mat.mes-hall↗