arXiv subjects

L. C. L. Hollenberg

Publications and source records attributed to L. C. L. Hollenberg.

At least 55 records · Page 3Linked to original sources

arXiv2012

Measurable quantum geometric phase from a rotating single spin

We demonstrate that the internal magnetic states of a single nitrogen-vacancy defect, within a rotating diamond crystal, acquire geometric phases. The geometric phase shift is manifest as a relative phase between components of a superposition of magnetic substates. We demonstrate that under reasonable experimental conditions a phase shift of up to four radians could be measured. Such a measurement of the accumulation of a geometric phase, due to macroscopic rotation, would be the first for a single atom-scale quantum system.

quant-ph↗

arXiv2012

Thermodynamic stability of neutral Xe defects in diamond

Optically active defect centers in diamond are of considerable interest, and ab initio calculations have provided valuable insight into the physics of these systems. Candidate structures for the Xe center in diamond, for which little structural information is known, are modeled using density functional theory. The relative thermodynamic stabilities were calculated for two likely structural arrangements. The split-vacancy structure is found to be the most stable for all temperatures up to 1500 K. A vibrational analysis was also carried out, predicting Raman- and IR-active modes which may aid in distinguishing between center structures.

cond-mat.mtrl-sci↗

arXiv2011

Dopant metrology in advanced FinFETs

Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity's chemical species and determine their concentration, local electric field and depth below the Si/SiO$_{\mathrm{2}}$ interface. The ability to model the excited states rather than just the ground state is the critical component of the analysis and allows the demonstration of a new approach to atomistic impurity metrology.

cond-mat.mes-hall↗

arXiv2011

Theory of the ground state spin of the NV- center in diamond: I. Fine structure, hyperfine structure, and interactions with electric, magnetic and strain fields

The ground state spin of the negatively charged nitrogen-vacancy center in diamond has been the platform for the recent rapid expansion of new frontiers in quantum metrology and solid state quantum information processing. In ambient conditions, the spin has been demonstrated to be a high precision magnetic and electric field sensor as well as a solid state qubit capable of coupling with nearby nuclear and electronic spins. However, in spite of its many outstanding demonstrations, the theory of the spin has not yet been fully developed and there does not currently exist thorough explanations for many of its properties, such as the anisotropy of the electron g-factor and the existence of Stark effects and strain splittings. In this work, the theory of the ground state spin is fully developed for the first time using the molecular orbital theory of the center in order to provide detailed explanations for the spin's fine and hyperfine structures and its interactions with electric, magnetic and strain fields.

cond-mat.mtrl-sci↗

arXiv2011

Lifetime enhanced transport in silicon due to spin and valley blockade

We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower energy states due perpendicular valley (and spin) configurations, offering an additional current path. By employing a detailed temperature dependence study in combination with a rate equation model, we estimate the lifetime of this particular state to exceed 48 ns. The two-electron spin-valley configurations of all relevant confined quantum states in our device were obtained by a large-scale atomistic tight-binding simulation. The LET acts as a signature of the complicated valley physics in silicon; a feature that becomes increasingly important in silicon quantum devices.

cond-mat.mes-hall↗

arXiv2011

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measure- ments. A self-consistent field large-scale tight-binding method is used to compute the D- binding energies with a domain of over 1.4 million atoms, taking into account the full bandstructure of the host, applied fields, and interfaces. An applied field pulls the loosely bound D- electron towards the interface and reduces the charging energy significantly below the bulk values. This enables formation of bound excited D-states in these gated donors, in contrast to bulk donors. A detailed quantitative comparison of the charging energies with transport spectroscopy measurements with multiple samples of arsenic donors in ultra-scaled FinFETs validates the model results and provides physical insights. We also report measured D-data showing for the first time the presence of bound D-excited states under applied fields.

cond-mat.mes-hall↗

arXiv2011

Engineered valley-orbit splittings in quantum confined nanostructures in silicon

An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies of the conduction band present in silicon. Understanding the "valley-orbit" (VO) gap is essential for silicon qubits, as a large VO gap prevents leakage of the qubit states into a higher dimensional Hilbert space. The VO gap varies considerably depending on quantum confinement, and can be engineered by external electric fields. In this work we investigate VO splitting experimentally and theoretically in a range of confinement regimes. We report measurements of the VO splitting in silicon quantum dot and donor devices through excited state transport spectroscopy. These results are underpinned by large-scale atomistic tight-binding calculations involving over 1 million atoms to compute VO splittings as functions of electric fields, donor depths, and surface disorder. The results provide a comprehensive picture of the range of VO splittings that can be achieved through quantum engineering.

cond-mat.mes-hall↗

arXiv2009

Monitoring Ion Channel Function In Real Time Through Quantum Decoherence

In drug discovery research there is a clear and urgent need for non-invasive detection of cell membrane ion channel operation with wide-field capability. Existing techniques are generally invasive, require specialized nano structures, or are only applicable to certain ion channel species. We show that quantum nanotechnology has enormous potential to provide a novel solution to this problem. The nitrogen-vacancy (NV) centre in nano-diamond is currently of great interest as a novel single atom quantum probe for nanoscale processes. However, until now, beyond the use of diamond nanocrystals as fluorescence markers, nothing was known about the quantum behaviour of a NV probe in the complex room temperature extra-cellular environment. For the first time we explore in detail the quantum dynamics of a NV probe in proximity to the ion channel, lipid bilayer and surrounding aqueous environment. Our theoretical results indicate that real-time detection of ion channel operation at millisecond resolution is possible by directly monitoring the quantum decoherence of the NV probe. With the potential to scan and scale-up to an array-based system this conclusion may have wide ranging implications for nanoscale biology and drug discovery.

quant-ph↗

arXiv2009

Single atom-scale diamond defect allows large Aharonov-Casher phase

We propose an experiment that would produce and measure a large Aharonov-Casher (A-C) phase in a solid-state system under macroscopic motion. A diamond crystal is mounted on a spinning disk in the presence of a uniform electric field. Internal magnetic states of a single NV defect, replacing interferometer trajectories, are coherently controlled by microwave pulses. The A-C phase shift is manifested as a relative phase, of up to 17 radians, between components of a superposition of magnetic substates, which is two orders of magnitude larger than that measured in any other atom-scale quantum system.

quant-ph↗

arXiv2009

Probe and Control of the Reservoir Density of States in Single-Electron Devices

We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window independently of the other device properties, and in agreement with the theoretical analysis. This method introduces a fast and convenient way of identifying excited states in these emerging nanostructures.

cond-mat.mes-hall↗

arXiv2009

Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon

We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of the donor electron directly into the SET island during the read-out phase. Simulations show that the charge transfer signals are typically Δq > 0.2 e - over an order of magnitude larger than achievable with metallic SETs on the SiO2 surface. A complete spin-based qubit structure is obtained by adding a local Electron Spin Resonance line for coherent spin control. This architecture is ideally suited to demonstrate and study the coherent properties of donor electron spins, but can be expanded and integrated with classical control electronics in the context of scale-up.

cond-mat.mes-hall↗

arXiv2009

Graphical algorithms and threshold error rates for the 2d colour code

Recent work on fault-tolerant quantum computation making use of topological error correction shows great potential, with the 2d surface code possessing a threshold error rate approaching 1% (NJoP 9:199, 2007), (arXiv:0905.0531). However, the 2d surface code requires the use of a complex state distillation procedure to achieve universal quantum computation. The colour code of (PRL 97:180501, 2006) is a related scheme partially solving the problem, providing a means to perform all Clifford group gates transversally. We review the colour code and its error correcting methodology, discussing one approximate technique based on graph matching. We derive an analytic lower bound to the threshold error rate of 6.25% under error-free syndrome extraction, while numerical simulations indicate it may be as high as 13.3%. Inclusion of faulty syndrome extraction circuits drops the threshold to approximately 0.1%.

quant-ph↗

arXiv2009

Nano-manipulation of diamond-based single photon sources

The ability to manipulate nano-particles at the nano-scale is critical for the development of active quantum systems. This paper presents a new technique to manipulate diamond nano-crystals at the nano-scale using a scanning electron microscope, nano-manipulator and custom tapered optical fibre probes. The manipulation of a ~ 300 nm diamond crystal, containing a single nitrogen-vacancy centre, onto the endface of an optical fibre is demonstrated. The emission properties of the single photon source post manipulation are in excellent agreement with those observed on the original substrate.

quant-ph↗

arXiv2009

Threshold error rates for the toric and surface codes

The surface code scheme for quantum computation features a 2d array of nearest-neighbor coupled qubits yet claims a threshold error rate approaching 1% (NJoP 9:199, 2007). This result was obtained for the toric code, from which the surface code is derived, and surpasses all other known codes restricted to 2d nearest-neighbor architectures by several orders of magnitude. We describe in detail an error correction procedure for the toric and surface codes, which is based on polynomial-time graph matching techniques and is efficiently implementable as the classical feed-forward processing step in a real quantum computer. By direct simulation of this error correction scheme, we determine the threshold error rates for the two codes (differing only in their boundary conditions) for both ideal and non-ideal syndrome extraction scenarios. We verify that the toric code has an asymptotic threshold of p = 15.5% under ideal syndrome extraction, and p = 7.8 10^-3 for the non-ideal case, in agreement with prior work. Simulations of the surface code indicate that the threshold is close to that of the toric code.

quant-ph↗

arXiv2009

Modelling the effect of charge noise on the exchange interaction between spins

We describe how the effect of charge noise on a pair of spins coupled via the exchange interaction can be calculated by modelling charge fluctuations as a random telegraph noise process using probability density functions. We develop analytic expressions for the time dependent superoperator of a pair of spins as a function of fluctuation amplitude and rate. We show that the theory can be extended to include multiple fluctuators, in particular, spectral distributions of fluctuators. These superoperators can be included in time dependent analyses of the state of spin systems designed for spintronics or quantum information processing to determine the decohering effects of exchange fluctuations.

quant-ph↗

arXiv2009

A highly efficient two level diamond based single photon source

An unexplored diamond defect centre which is found to emit stable single photons at a measured rate of 1.6 MHz at room temperature is reported. The novel centre, identified in chemical vapour deposition grown diamond crystals, exhibits a sharp zero phonon line at 734 nm with a full width at half maximum of ~ 4 nm. The photon statistics confirm the center is a single emitter and provides direct evidence of the first true two-level single quantum system in diamond.

quant-ph↗

arXiv2009

Single photon quantum non-demolition in the presence of inhomogeneous broadening

Electromagnetically induced transparency (EIT) has been often proposed for generating nonlinear optical effects at the single photon level; in particular, as a means to effect a quantum non-demolition measurement of a single photon field. Previous treatments have usually considered homogeneously broadened samples, but realisations in any medium will have to contend with inhomogeneous broadening. Here we reappraise an earlier scheme [Munro \textit{et al.} Phys. Rev. A \textbf{71}, 033819 (2005)] with respect to inhomogeneities and show an alternative mode of operation that is preferred in an inhomogeneous environment. We further show the implications of these results on a potential implementation in diamond containing nitrogen-vacancy colour centres. Our modelling shows that single mode waveguide structures of length $200 μ\mathrm{m}$ in single-crystal diamond containing a dilute ensemble of NV$^-$ of only 200 centres are sufficient for quantum non-demolition measurements using EIT-based weak nonlinear interactions.

quant-ph↗

arXiv2008

Scanning Quantum Decoherence Microscopy

The use of qubits as sensitive magnetometers has been studied theoretically and recent demonstrated experimentally. In this paper we propose a generalisation of this concept, where a scanning two-state quantum system is used to probe the subtle effects of decoherence (as well as its surrounding electromagnetic environment). Mapping both the Hamiltonian and decoherence properties of a qubit simultaneously, provides a unique image of the magnetic (or electric) field properties at the nanoscale. The resulting images are sensitive to the temporal as well as spatial variation in the fields created by the sample. As an example we theoretically study two applications of this technology; one from condensed matter physics, the other biophysics. The individual components required to realise the simplest version of this device (characterisation and measurement of qubits, nanoscale positioning) have already been demonstrated experimentally.

quant-ph↗