arXiv subjects

L. Gonella

Publications and source records attributed to L. Gonella.

8 recordsLinked to original sources

arXiv2025

Study of MALTA2, a Depleted Monolithic Active Pixel Sensor, with grazing angles at CERN SPS 180 GeV/c hadron beam

MALTA2 is a Depleted Monolithic Active Pixel Sensor designed to meet the challenging requirements of future collider experiments, in particularly extreme radiation tolerance and high hit rate. The sensor is fabricated in a modified Tower 180 nm CMOS imaging technology to mitigate performance degradation caused by 100 MRad of Total Ionising Dose and greater than 10^{15} 1 MeV n_{eq}/cm^2 of Non-Ionising Energy Loss. MALTA2 samples have been tested during the CERN SPS test beam campaign in 2023-2024, before and after irradiation at a fluence of 1 $\times$ 10^{15} 1 MeV n_{eq}/cm^2. The sensors were positioned at various inclinations relative to the beam, covering grazing angles from 0 to 60 degrees. This contribution presents measurements of detection efficiency and cluster size as functions of these angles, along with an estimation of the active depth of the depleted region based on the test beam results.

hep-ex↗

arXiv2025

Timing characterization of MALTA and MALTA2 pixel detectors using Micro X-ray source

The MALTA monolithic active pixel detector is developed to address some of the challenges anticipated in future high-energy physics detectors. As part of its characterization, we conducted timing studies necessary to provide a figure of merit for this family of monolithic pixel detectors. MALTA has a metal layer in front-end electronics, and the conventional laser technique is not suitable for timing studies due to the reflection of the laser from the metallic surface. X-rays have been employed as a more effective alternative for penetration through these layers. The triggered X-ray set-up is designed to study timing measurements of monolithic detectors. The timing response of the X-ray set-up is characterized using an LGAD. The timing response of the MALTA and MALTA2 pixel detectors is studied, and the best response time of MALTA2 pixel detectors is measured at about 2.6 ns.

physics.ins-det↗

arXiv2024

Measurements of proton hardness factors in silicon at energies between 10 MeV and 25 MeV

Silicon detector technologies are often employed for high energy particle physics applications due to their excellent radiation hardness. Radiation damage in the form of bulk or substrate damage is dependent on the incident particle species and energy. The fluence is therefore often quoted as the 1 MeV neutron equivalent fluence, with hardness factors being the scaling quantity. The hardness factor can be determined by analysing the change in the leakage current of silicon pad diodes post-irradiation. Using the MC40 cyclotron facility at the University of Birmingham, n-in-p FZ silicon pad diodes were irradiated to several fluence points at three different proton beam energies. The hardness factors acquired were 3.07 $\pm$ 0.37 for 10.5 MeV protons, 2.73 $\pm$ 0.27 for 16.4 MeV protons and 2.19 $\pm$ 0.22 for 24.3 MeV protons. The value for 16.4 MeV protons agrees with the theoretical predictions, whereas the values for 10.5 MeV and 24.3 MeV are lower than predicted by the same calculations.

physics.ins-det↗

arXiv2023

MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czochralski (MALTA-Cz)" full size DMAPS sensor has been developed with the goal to demonstrate a radiation hard, thin CMOS sensor with high granularity, high hit-rate capability, fast response time and superior radiation tolerance. The small pixel size ($36.4\times 36.4$~$μ$m$^2$) provides high spatial resolution. Its asynchronous readout architecture is designed for high hit-rates and fast time response in triggered and trigger-less detector applications. The readout architecture is designed to stream all hit data to the multi-channel output which allows an off-sensor trigger formation and the use of hit-time information for event tagging. The sensor manufacturing has been optimised through process adaptation and special implant designs to allow the manufacturing of small electrode DMAPS on thick high-resistivity p-type Czochralski substrate. The special processing ensures excellent charge collection and charge particle detection efficiency even after a high level of radiation. Furthermore the special implant design and use of a Czochralski substrate improves the sensor's time resolution. This paper presents a summary of sensor design optimisation through process and implant choices and TCAD simulation to model the signal response. Beam and laboratory test results on unirradiated and irradiated sensors have shown excellent detection efficiency after a dose of $2\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$. The time resolution of the sensor is measured to be $σ=2$~ns.

physics.ins-det↗

arXiv2023

Timing performance of radiation hard MALTA monolithic Pixel sensors

The MALTA family of Depleted Monolithic Active Pixel Sensor (DMAPS) produced in Tower 180 nm CMOS technology targets radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness up to $2 \times 10^{15}~1~\text{MeV}~\text{n}_{eq}/\text{cm}^2$ and time resolution below 2 ns, with uniform charge collection efficiency across the Pixel of size $36.4 \times 36.4~μ\text{m}^2$ with a $3~μ\text{m}^2$ electrode size. The MALTA2 demonstrator produced in 2021 on high-resistivity epitaxial silicon and on Czochralski substrates implements a new cascoded front-end that reduces the RTS noise and has a higher gain. This contribution shows results from MALTA2 on timing resolution at the nanosecond level from the CERN SPS test-beam campaign of 2021.

physics.ins-det↗

arXiv2019

Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC

Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$.

physics.ins-det↗

arXiv2019

Experimental Determination of Proton Hardness Factors at Several Irradiation Facilities

The scheduled High Luminosity upgrade of the CERN Large Hadron Collider presents new challenges in terms of radiation hardness. As a consequence, campaigns to qualify the radiation hardness of detector sensors and components are undertaken worldwide. The effects of irradiation with beams of different particle species and energy, aiming to assess displacement damage in semiconductor devices, are communicated in terms of the equivalent 1 MeV neutron fluence, using the hardness factor for the conversion. In this work, the hardness factors for protons at three different kinetic energies have been measured by analysing the I-V and C-V characteristics of reverse biased diodes, pre- and post-irradiation. The sensors were irradiated at the MC40 Cyclotron of the University of Birmingham, the cyclotron at the Karlsruhe Institute of Technology, and the IRRAD proton facility at CERN, with the respective measured proton hardness factors being: 2.1 +/- 0.5 for 24 MeV, 2.2 +/- 0.4 for 23 MeV, and 0.62 +/- 0.04 for 23 GeV. The hardness factors currently used in these three facilities are in agreement with the presented measurements.

physics.ins-det↗

arXiv2017

Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line

Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 $\times$ 10$^{15}$ n$_{\rm eq}$ cm$^{-2}$. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.

physics.ins-det↗