arXiv subjects

L. H. Yu

Publications and source records attributed to L. H. Yu.

11 recordsLinked to original sources

arXiv2022

Acceleration of 60 MeV proton beams in the commissioning experiment of SULF-10 PW laser

We report the experimental results of the commissioning phase in the 10 PW laser beamline of Shanghai Superintense Ultrafast Laser Facility (SULF). The peak power reaches 2.4 PW on target without the last amplifying during the experiment. The laser energy of 72\pm 9 J is directed to a focal spot of ~6 {\mu}m diameter (FWHM) in 30 fs pulse duration, yielding a focused peak intensity around 2.0 \times 10^{21} W/cm^2. First laser-proton acceleration experiment is performed using plain copper and plastic targets. High-energy proton beams with maximum cut-off energy up to 62.5 MeV are achieved using copper foils at the optimum target thickness of 4 {\mu}m via target normal sheath acceleration (TNSA). For plastic targets of tens of nanometers thick, the proton cut-off energy is approximately 20 MeV, showing ring-like or filamented density distributions. These experimental results reflect the capabilities of the SULF-10 PW beamline, e.g., both ultrahigh intensity and relatively good beam contrast. Further optimization for these key parameters is underway, where peak laser intensities of 10^{22}-10^{23} W/cm^2 are anticipated to support various experiments on extreme field physics.

physics.plasm-ph↗

arXiv2006

Magnetoresistance of atomic-scale electromigrated nickel nanocontacts

We report measurements of the electron transport through atomic-scale constrictions and tunnel junctions between ferromagnetic electrodes. Structures are fabricated using a combination of e-beam lithography and controlled electromigration. Sample geometries are chosen to allow independent control of electrode bulk magnetizations. As junction size is decreased to the single channel limit, conventional anisotropic magnetoresistance (AMR) increases in magnitude, approaching the size expected for tunneling magnetoresistance (TMR) upon tunnel junction formation. Significant mesoscopic variations are seen in the magnitude and sign of the magnetoresistance, and no evidence is found of large ballistic magnetoresistance effects.

cond-mat.mes-hall↗

arXiv2005

Kondo resonances and anomalous gate dependence of electronic conduction in single-molecule transistors

We report Kondo resonances in the conduction of single-molecule transistors based on transition metal coordination complexes. We find Kondo temperatures in excess of 50 K, comparable to those in purely metallic systems. The observed gate dependence of the Kondo temperature is inconsistent with observations in semiconductor quantum dots and a simple single-dot-level model. We discuss possible explanations of this effect, in light of electronic structure calculations.

cond-mat.mes-hall↗

arXiv2004

Inelastic electron tunneling via molecular vibrations in single-molecule transistors

In single-molecule transistors, we observe inelastic cotunneling features that correspond energetically to vibrational excitations of the molecule, as determined by Raman and infrared spectroscopy. This is a form of inelastic electron tunneling spectroscopy of single molecules, with the transistor geometry allowing in-situ tuning of the electronic states via a gate electrode. The vibrational features shift and change shape as the electronic levels are tuned near resonance, indicating significant modification of the vibrational states. When the molecule contains an unpaired electron, we also observe vibrational satellite features around the Kondo resonance.

cond-mat.mes-hall↗

arXiv2004

Transport in single-molecule transistors: Kondo physics and negative differential resistance

We report two examples of transport phenomena based on sharp features in the effective density of states of molecular-scale transistors: Kondo physics in C$_{60}$-based devices, and gate-modulated negative differential resistance (NDR) in ``control'' devices that we ascribe to adsorbed contamination. We discuss the need for a statistical approach to device characterization, and the criteria that must be satisfied to infer that transport is based on single molecules. We describe apparent Kondo physics in C$_{60}$-based single-molecule transistors (SMTs), including signatures of molecular vibrations in the Kondo regime. Finally, we report gate-modulated NDR in devices made without intentional molecular components, and discuss possible origins of this property.

cond-mat.mes-hall↗

arXiv2003

The Kondo effect in C$_{60}$ single-molecule transistors

We have used an electromigration technique to fabricate C$_{60}$-based single-molecule transistors. We detail the process statistics and the protocols used to infer the successful formation of a single-molecule transistor. At low temperatures each transistor acts as a single-electron device in the Coulomb blockade regime. Resonances in the differential conductance indicate vibrational excitations consistent with a known mode of C$_{60}$. In several devices we observe conductance features characteristic of the Kondo effect, a coherent many-body state comprising an unpaired spin on the molecule coupled by exchange to the conduction electrons of the leads. The inferred Kondo temperature typically exceeds 50 K, and signatures of the vibrational modes persist into the Kondo regime.

cond-mat.mes-hall↗

arXiv2003

Density of states and magnetoconductance of disordered Au point contacts

We report the first low temperature magnetotransport measurements on electrochemically fabricated atomic scale gold nanojunctions. As $T \to 0$, the junctions exhibit nonperturbatively large zero bias anomalies (ZBAs) in their differential conductance. We consider several explanations and find that the ZBAs are consistent with a reduced local density of states (LDOS) in the disordered metal. We suggest that this is a result of Coulomb interactions in a granular metal with moderate intergrain coupling. Magnetoconductance of atomic scale junctions also differs significantly from that of less geometrically constrained devices, and supports this explanation.

cond-mat.mes-hall↗

arXiv2003

Zero-bias anomalies in electrochemically fabricated nanojunctions

A streamlined technique for the electrochemical fabrication of metal nanojunctions (MNJs) between lithographically defined electrodes is presented. The first low-temperature transport measurements in such structures reveal suppression of the conductance near zero-bias. The size of the zero-bias anomaly (ZBA) depends strongly on the fabrication electrochemistry and the dimensions of the resulting MNJ. We present evidence that the nonperturbative ZBA in atomic-scale junctions is due to a density of states suppression in the leads.

cond-mat.mes-hall↗

arXiv1996

Momentum Distribution for Bosons with Positive Scattering Length in a Trap

The coordinate-momentum double distribution function $ρ({\bf r}, {\bf p}) d^{3}rd^{3}p$ is calculated in the local density approximation for bosons with positive scattering length $a$ in a trap. The calculation is valid to the first order of $a$. To clarify the meaning of the result, it is compared for a special case with the double distribution function $ρ_{w}d^{3} rd^{3}p$ of Wigner.

cond-mat↗

arXiv1996

Bose-Einstein Condensation of Atoms in a Trap

We point out that the local density approximation (LDA) of Oliva is an adaptation of the Thomas-Fermi method, and is a good approximation when $\varepsilon = \hbarω/kT <<1$. For the case of scattering length $a > 0$, the LDA leads to a quantitative result (14') easily checked by experiments. Critical remarks are made about the physics of the many body problem in terms of the scattering length $a$.

cond-mat↗

arXiv1993

Exact Dynamics of Quantum Dissipative System in Constant External Field

The quantum dynamics of a simplest dissipative system, a particle moving in a constant external field , is exactly studied by taking into account its interaction with a bath of Ohmic spectral density. We apply the main idea and methods developed in our recent work [1] to quantum dissipative system with constant external field. Quantizing the dissipative system we obtain the simple and exact solutions for the coordinate operator of the system in Heisenberg picture and the wave function of the composite system of system and bath in Schroedinger picture. An effective Hamiltonian for the dissipative system is explicitly derived from these solutions with Heisenberg picture method and thereby the meaning of the wavefunction governed by it is clarified by analyzing the effect of the Brownian motion. Especially, the general effective Hamiltonian for the case with arbitrary potential is directly derived with this method for the case when the Brownian motion can be ignored. Using this effective Hamiltonian, we show an interesting fact that the dissipation suppresses the wave packet spreading.

hep-th↗