arXiv subjects

L. Peri

Publications and source records attributed to L. Peri.

4 recordsLinked to original sources

arXiv2026

Reflections on Quantum Reflectometry: Quantum and Tunneling capacitances as well as Sisyphus and Hermes resistances

When a quantum electronic device is coupled to an electrical resonator, admittance changes of the quantum subsystem may be detected. The effective reactance may include capacitive and inductive terms that incorporate geometric, quantum, and tunneling components; while the effective resistance may be composed of Sisyphus and Hermes terms linked to relaxation and decoherence, respectively. Such reflectometry is usually studied when all characteristic times of the quantum system are much shorter than the resonator's period, in which case only stationary quantum states are probed. We present a rigorous description of a driven-dissipative qudit-resonator system. Our approach demonstrates how to strictly introduce quantum and tunneling capacitances as well as Hermes and Sisyphus resistances, and how these values are modified when the dynamics of the subsystems becomes mutually dependent. We present the cases of a Cooper-pair box, a single-Cooper-pair transistor, a double quantum dot, and a single-electron box. Our approach can be applied to describe any quantum system coupled to any classical resonator.

quant-ph↗

arXiv2023

Unified linear response theory of quantum electronic circuits

Modelling the electrical response of multi-level quantum systems at finite frequency has been typically performed in the context of two incomplete paradigms: (i) input-output theory, which is valid at any frequency but neglects dynamic losses, and (ii) semiclassical theory, which captures well dynamic dissipation effects but is only accurate at low frequencies. Here, we develop a unifying theory, valid for arbitrary frequencies, that captures both the quantum behaviour and the non-unitary effects introduced by relaxation and dephasing. The theory allows a multi-level system to be described by a universal small-signal equivalent circuit model, a resonant RLC circuit, whose topology only depends on the number of energy levels. We apply our model to a double quantum-dot charge qubit and a Majorana qubit, showing the capability to continuously describe the systems from adiabatic to resonant and from coherent to incoherent, suggesting new and realistic experiments for improved quantum state readout. Our model will facilitate the design of hybrid quantum-classical circuits and the simulation of qubit control and quantum state readout.

cond-mat.mes-hall↗

arXiv2023

Beyond-adiabatic Quantum Admittance of a Semiconductor Quantum Dot at High Frequencies: Rethinking Reflectometry as Polaron Dynamics

Semiconductor quantum dots operated dynamically are the basis of many quantum technologies such as quantum sensors and computers. Hence, modelling their electrical properties at microwave frequencies becomes essential to simulate their performance in larger electronic circuits. Here, we develop a self-consistent quantum master equation formalism to obtain the admittance of a quantum dot tunnel-coupled to a charge reservoir under the effect of a coherent photon bath. We find a general expression for the admittance that captures the well-known semiclassical (thermal) limit, along with the transition to lifetime and power broadening regimes due to the increased coupling to the reservoir and amplitude of the photonic drive, respectively. Furthermore, we describe two new photon-mediated regimes: Floquet broadening, determined by the dressing of the QD states, and broadening determined by photon loss in the system. Our results provide a method to simulate the high-frequency behaviour of QDs in a wide range of limits, describe past experiments, and propose novel explorations of QD-photon interactions.

cond-mat.mes-hall↗

arXiv2022

A quantum dot-based frequency multiplier

Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation are needed. Here, we present a quantum dot-based radiofrequency multiplier operated at cryogenic temperatures. The device is based on the non-linear capacitance-voltage characteristics of quantum dot systems arising from their low-dimensional density of states. We implement the multiplier in a multi-gate silicon nanowire transistor using two complementary device configurations: a single quantum dot coupled to a charge reservoir and a coupled double quantum dot. We study the harmonic voltage conversion as a function of energy detuning, multiplication factor and harmonic phase noise and find near ideal performance up to a multiplication factor of 10. Our results demonstrate a method for high-frequency conversion that could be readily integrated into silicon-based quantum computing systems and be applied to other semiconductors.

cond-mat.mes-hall↗