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arXiv · 2211.14127

A quantum dot-based frequency multiplier

G. A. Oakes·L. Peri·L. Cochrane·F. Martins·L. Hutin·B. Bertrand·M. Vinet·A. Gomez Saiz·C. J. B. Ford·C. G. Smith·M. F. Gonzalez-Zalba
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Abstract

Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation are needed. Here, we present a quantum dot-based radiofrequency multiplier operated at cryogenic temperatures. The device is based on the non-linear capacitance-voltage characteristics of quantum dot systems arising from their low-dimensional density of states. We implement the multiplier in a multi-gate silicon nanowire transistor using two complementary device configurations: a single quantum dot coupled to a charge reservoir and a coupled double quantum dot. We study the harmonic voltage conversion as a function of energy detuning, multiplication factor and harmonic phase noise and find near ideal performance up to a multiplication factor of 10. Our results demonstrate a method for high-frequency conversion that could be readily integrated into silicon-based quantum computing systems and be applied to other semiconductors.

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G. A. Oakes, L. Peri, L. Cochrane, F. Martins, L. Hutin, B. Bertrand, M. Vinet, A. Gomez Saiz, C. J. B. Ford, C. G. Smith, M. F. Gonzalez-Zalba. 2022-11-25. A quantum dot-based frequency multiplier. https://doi.org/10.1103/prxquantum.4.020346

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