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L. Ross

Publications and source records attributed to L. Ross.

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3D Reconstruction of Bias Effects on Porosity, Alignment and Mesoscale Structure in Electrospun Tubular Polycaprolactone

Porosity variations in tubular scaffolds are critical to reproducible, sophisticated applications of electrospun fibers in biomedicine. Established laser micrometry techniques produced ~14,000 datapoints enabling thickness and porosity plots versus both the azimuthal (Phi) and axial (Z) directions following cylindrical mandrel deposition. These 3D datasets could then be "unrolled" into "maps" revealing variations in thickness and porosity versus 0, -5, and -15 kV collector bias. As bias increases, thinner, more "focused" depositions occur. Simultaneous decreases in net porosity versus bias (91.1% 0kV > 83.4% -5kV > 80.2% -15 kV) are sensible, but significant changes in the distribution were unexpected. Surprisingly, at 0 kV, extensive mesoscale surface roughness is evident. Optical profilometry revealed unique features ~1600-420 mum in size, standing ~210 mum above the surrounding surface. These shrink to only ~440-150 mum in size and ~30 mum higher at -5 kV bias and disappear entirely at -15 kV. Scanning electron microscopy (SEM) resolved these into novel, localized "domains" containing tightly aligned fibers oriented parallel to the mandrel axis. Unexpectedly, we also observed substantial orientation along the mandrel axis. By modifying classical bending instability models to incorporate cylindrical electric fields, simulation revealed that horizontal components in the modified electric field alter bending loop shape, causing the observed alignment. This provides a new, easily utilized tool enabling facile, efficient tuning of orientation.

physics.app-ph

Quantum transport properties of industrial $^{28}$Si/$^{28}$SiO$_2$

We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of $1.75\times10^{11}$ cm$^{-2}$ and a peak mobility of 9800 cm$^2$/Vs are measured at a temperature of 1.7 K. The $^{28}$Si/$^{28}$SiO$_2$ interface is characterized by a roughness of $\Delta=0.4$ nm and a correlation length of $\Lambda=3.4$ nm. An upper bound for valley splitting energy of 480 $\mu$eV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale $^{28}$Si/$^{28}$SiO$_2$ as a promising material platform to manufacture industrial spin qubits.

cond-mat.mes-hall