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arXiv · 1810.06521

Quantum transport properties of industrial $^{28}$Si/$^{28}$SiO$_2$

D. Sabbagh·N. Thomas·J. Torres·R. Pillarisetty·P. Amin·H. C. George·K. Singh·A. Budrevich·M. Robinson·D. Merrill·L. Ross·J. Roberts·L. Lampert·L. Massa·S. Amitonov·J. Boter·G. Droulers·H. G. J. Eenink·M. van Hezel·D. Donelson·M. Veldhorst·L. M. K. Vandersypen·J. S. Clarke·G. Scappucci
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Abstract

We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of $1.75\times10^{11}$ cm$^{-2}$ and a peak mobility of 9800 cm$^2$/Vs are measured at a temperature of 1.7 K. The $^{28}$Si/$^{28}$SiO$_2$ interface is characterized by a roughness of $\Delta=0.4$ nm and a correlation length of $\Lambda=3.4$ nm. An upper bound for valley splitting energy of 480 $\mu$eV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale $^{28}$Si/$^{28}$SiO$_2$ as a promising material platform to manufacture industrial spin qubits.

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D. Sabbagh, N. Thomas, J. Torres, R. Pillarisetty, P. Amin, H. C. George, K. Singh, A. Budrevich, M. Robinson, D. Merrill, L. Ross, J. Roberts, L. Lampert, L. Massa, S. Amitonov, J. Boter, G. Droulers, H. G. J. Eenink, M. van Hezel, D. Donelson, M. Veldhorst, L. M. K. Vandersypen, J. S. Clarke, G. Scappucci. 2018-10-15. Quantum transport properties of industrial $^{28}$Si/$^{28}$SiO$_2$. https://doi.org/10.1103/physrevapplied.12.014013

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