arXiv subjects

Leonardo Puppulin

Publications and source records attributed to Leonardo Puppulin.

3 recordsLinked to original sources

arXiv2026

Highly Efficient Exciton Modulation in MoSe$_2$/PdSe$_2$ Heterostructures

Controlling exciton recombination in atomically thin semiconductors is central to their optoelectronic functionality, as the competition between radiative and non-radiative decay channels governs emission efficiency. Existing approaches, such as defect passivation, chemical doping, dielectric engineering, and strain tuning, primarily aim to suppress non-radiative losses. Here, we report a pronounced $\sim$6-fold enhancement of room-temperature A-exciton emission in a type-I MoSe$_2$/PdSe$_2$ van der Waals heterostructure, yielding a photoluminescence quantum yield of 6 %, compared to $\sim$1 % for as-exfoliated monolayer MoSe$_2$. This enhancement is accompanied by strong quenching of the B-exciton, consistent with interlayer electronic coupling that redistributes exciton populations toward the radiative A-exciton channel. Power- and temperature-dependent measurements reveal a suppression of exciton-exciton annihilation and a crossover to quenched emission at low temperature, indicating a redistribution of exciton relaxation pathways. Photoluminescence excitation spectroscopy further reveals a broadband enhancement spanning 450-725 nm, ruling out a resonance-specific mechanism. These results demonstrate that interlayer electronic coupling can be used as an efficient means to redirect exciton populations toward radiative channels, enhancing emission efficiency in two-dimensional semiconductors without chemical modification or strain.

cond-mat.mes-hall↗

arXiv2025

Tuning Ultra-Narrow Direct Bandgap in alpha-Sn Nanocrystals: A CMOS-Compatible Approach for THz Applications

alpha-Sn has recently been attracting significant interest due to its unique electronic properties. However, this allotrope of Sn is stable only below 13 °C and alternative options to the conventional stabilization by epitaxial growth on InSb are still a challenge. In this work, nanoparticles with inner alpha-Sn nanocrystals were synthesized on a Silicon substrate via a CMOS-compatible process through microwave irradiation. The nanoparticle morphology was characterized by Scanning Electron Microscopy and Atomic Force Microscopy, demonstrating the ability to control the nanoparticle size by a dewetting process combined with a coalescence process induced by the microwaves. Grazing Incidence X-Ray Diffraction analyses confirmed the stabilization of the alpha-Sn phase within a SnO2 shell, while X-Ray Photoemission Spectroscopy measurements revealed the presence of a bandgap. Infrared transmission spectroscopy combined with a Tauc-plot extrapolation led to an estimate of the gap in the range from 64 to 137 meV range. Furthermore, the possibility to tune the bandgap by controlling the nanoparticle size, possibly leveraging weak quantum confinement effects, was demonstrated, unveiling the potential of alpha-Sn nanoparticles on Si for the development of CMOS-compatible THz devices.

cond-mat.mtrl-sci↗

arXiv2024

Enhanced Piezoelectricity in Sustainable-by-design Chitosan Nanocomposite Elastomers for Prosthetics, Robotics, and Circular Electronics

Piezoelectricity, the generation of electric charge in response to mechanical stress, is a key property in both natural and synthetic materials. This study significantly boosts the piezoelectric response of chitosan, a biodegradable biopolymer, by integrating chitin/chitosan nanocrystals into natural chitosan-based thin film elastomers. The resulting materials achieve d$_{33}$ values of 15-19 pmV$^{-1}$, a marked improvement over the 5-9 pmV$^{-1}$ observed in pure chitosan films thanks to increased crystallinity from the nanocrystals. We utilize piezoresponse force microscopy (PFM) to accurately measure the d$_{33}$ coefficient, employing an engineered extraction method that eliminates the electrostatic contribution, which can overestimate the piezoelectric response. The resulting chitosan elastomers exhibit elastic deformation up to 40\% strain and a Young's modulus of approximately 100 MPa, similar to soft tissues. These properties, along with the fact that the employed materials can be entirely crafted from upcycled biowaste, make these elastomers ideal for prosthetics, wearable devices, energy harvesters, and sustainable transducers. Our findings underscore the potential of chitosan-based piezoelectric materials for advanced applications in biotechnology, soft robotics, and the green Internet of Things.

cond-mat.other↗