arXiv subjects

Leonardo Viti

Publications and source records attributed to Leonardo Viti.

At least 19 recordsLinked to original sources

arXiv2026

Engineering THz-frequency light generation, detection and manipulation through graphene

Graphene has been one of the most investigated materials in the last decade. Its unique optoelectronic properties have indeed raised it to an ideal and revolutionary candidate for the development of entirely novel technologies across the whole electromagnetic spectrum, from the microwaves to the x-rays, even crossing domain of intense application relevance, as terahertz (THz) frequencies. Owing to its exceptionally high tensile strength, electrical conductivity, transparency, ultra-fast carrier dynamics, non-linear optical response to intense fields, electrical tunability and ease of integration with semiconductor materials, graphene is a key disruptor for the engineering of generation, manipulation, and detection technologies with ad-hoc properties, conceived from scratch. In this review, we elucidate the fundamental properties of graphene, with an emphasis on its transport, electronic, ultrafast and non-linear interactions, and explore its enormous technological potential of integration with a diverse array of material platforms. We start with a concise introduction to graphene physics, followed by the most remarkable technological developments of graphene-based photodetectors, modulators, and sources in the 1-10 THz frequency range. As such, this review aims to serve as a valuable resource for a broad audience, ranging from novices to experts, who are keen to explore graphene physics for conceiving and realizing micro- and nano-scale devices and systems in the far infrared. This would allow addressing the present challenging application needs in quantum science, wireless communications, ultrafast science, plasmonics and nanophotonics.

cond-mat.mes-hall↗

arXiv2025

Broadband, Flexible, Skin-Compatible Carbon Dots/Graphene Photodetectors for Wearable Applications

The development of wearable photodetectors demands a unique combination of broadband optical sensitivity, mechanical flexibility, and skin-compatibility, with these requirements rarely met simultaneously by existing technologies. Here, we present photodetectors that combine all of these performances. This is achieved by integrating carbon dots, engineered for extended ultraviolet-to-near-infrared absorption, with single-layer graphene transferred onto a plastic substrate. Unlike traditional quantum dot systems, our carbon dots achieve a broad ultraviolet-to-near-infrared response without toxic heavy metals. Graphene provides an efficient channel for charge transport, while a biocompatible chitosan-glycerol electrolyte enables efficient, low-voltage carrier modulation, with peak performance at approximately 0.5 V gate bias. The resulting photodetectors exhibit a broadband photoresponse with responsivities of approximately 0.19 A/W at 406 nm, 0.32 A/W at 642 nm, and 0.18 A/W at 785 nm. They maintain consistent performance at a bending radius of 0.8 cm with negligible degradation after repeated cycles. Furthermore, skin-compatibility assessments using the SkinEthic model confirm the non-toxic nature and suitability of our devices for direct skin contact. The combination of broadband absorption (400-800 nm), flexibility, and skin-compatibility, along with low-voltage operation ($<$ 1.5 V), positions our photodetectors as promising building blocks for next-generation wearable optoelectronics.

cond-mat.other↗

arXiv2022

Lattice dynamics and elastic properties of black phosphorus

We experimentally determine the lattice dynamics of black phosphorus layered crystals through a combination of x-ray diffuse scattering and inelastic x-ray scattering, and we rationalize our experimental findings using $\textit{ab initio}$ calculations. From the phonon dispersions at terahertz frequencies, we derive the full single-crystal elastic tensor and relate it to the macroscopic elastic response of black phosphorus, described by the elastic moduli. The elastic stiffness coefficients obtained here provide an important benchmark for models of black phosphorus and related materials, such as phosphorene and black phosphorus nanotubes, recently emerged quantum materials, disclosing a huge potential for nanophotonics, optoelectronics, and quantum sensing.

cond-mat.mtrl-sci↗

arXiv2022

Tailored nano-electronics and photonics with two-dimensional materials at terahertz frequencies

The discovery of graphene and its fascinating capabilities have triggered an unprecedented interest in inorganic two-dimensional (2D) materials. Van der Waals (vdW) layered materials as graphene, hexagonal boron nitride (hBN), transition metal dichalcogenides (TMDs), and the more recently re-discovered black phosphorus (BP) indeed display an exceptional technological potential for engineering nano-electronic and nano-photonic devices and components by design, offering a unique platform for developing new devices with a variety of ad-hoc properties. In this perspective article, we provide a vision on the key transformative applications of 2D nanomaterials for the developments of nanoelectronic, nanophotonic, optical and plasmonic devices, at terahertz frequencies, highlighting how the rich physical phenomena enabled by their unique band-structure engineering can allow those devices to boost the vibrant field of quantum science and quantum technologies.

physics.app-ph↗

arXiv2021

Quantum-dot single-electron transistor as thermoelectric quantum detectors at terahertz frequencies

Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired frequency range, they can allow devising efficient quantum sensors across any frequency domain. Here, we exploit the rich few-electrons physics to develop millimeter-wave nanodetectors employing as sensing element an InAs/InAs0.3P0.7 quantum-dot nanowire, embedded in a single electron transistor. Once irradiated with light the deeply localized quantum element exhibits an extra electromotive force driven by the photothermoelectric effect, which is exploited to efficiently sense radiation at 0.6 THz with a noise equivalent power < 8 pWHz-1/2 and almost zero dark current. The achieved results open intriguing perspectives for quantum key distributions, quantum communications and quantum cryptography at terahertz frequencies.

cond-mat.mes-hall↗

arXiv2021

Chip-scale terahertz frequency combs through integrated intersubband polariton bleaching

Quantum cascade lasers (QCLs) represent a fascinating accomplishment of quantum engineering and enable the direct generation of terahertz (THz) frequency radiation from an electrically-biased semiconductor heterostructure. Their large spectral bandwidth, high output powers and quantum-limited linewidths have facilitated the realization of THz pulses by active mode-locking and passive generation of optical frequency combs (FCs) through intracavity four-wave-mixing, albeit over a restricted operational regime. Here, we conceive an integrated architecture for the generation of high power (10 mW) THz FCs comprising an ultrafast THz polaritonic reflector, exploiting intersubband cavity polaritons, and a broad bandwidth (2.3-3.8 THz) heterogeneous THz QCL. Quantum cascade lasers (QCLs) represent a fascinating accomplishment of quantum engineering and enable the direct generation of terahertz (THz) frequency radiation from an electrically-biased semiconductor heterostructure. By tuning the group delay dispersion in an integrated geometry, through the exploitation of light induced bleaching of the intersubband-based THz polaritons, we demonstrate spectral reshaping of the QCL emission and stable FC operation over an operational dynamic range of up to 38%, characterized by a single and narrow (down to 700 Hz) intermode beatnote. Our concept provides design guidelines for a new generation of compact, cost-effective, electrically driven chip-scale FC sources based on ultrafast polariton dynamics, paving the way towards the generation of mode locked THz micro-lasers that will strongly impact a broad range of applications in ultrafast sciences, data storage, high-speed communication and spectroscopy.

physics.optics↗

arXiv2021

Homogeneous quantum cascade lasers operating as Terahertz frequency combs over their entire operational regime

We report a homogeneous quantum cascade laser (QCL) emitting at Terahertz (THz) frequencies, with a total spectral emission of about 0.6 THz centered around 3.3 THz, a current density dynamic range of Jdr=1.53, and a continuous wave output power of 7 mW. The analysis of the intermode beatnote unveils that the devised laser operates as optical frequency comb (FC) synthesizer over the whole laser operational regime, with up to 36 optically active laser modes delivering ~ 200 uW of optical power per comb tooth, a power level unreached so far in any THz QCL FC. A stable and narrow single beatnote, reaching a minimum linewidth of 500 Hz, is observed over a current density range of 240 A/cm2, and even across the negative differential resistance region. We further prove that the QCL frequency comb can be injection locked with moderate RF power at the intermode beatnote frequency, covering a locking range of 1.2 MHz. The demonstration of stable FC operation, in a QCL, over the full current density dynamic range, and without any external dispersion compensation mechanism, makes our proposed homogenous THz QCL an ideal tool for metrological application requiring mode-hop electrical tunability and a tight control of the frequency and phase jitter.

physics.optics↗

arXiv2020

Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy

Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers (< 1 nW/Hz$^{1/2}$) and high responsivities (> 100 V/W). Nano-engineering a NW photodetector combining high sensitivity with high speed (sub-ns) in the THz regime at RT is highly desirable for many frontier applications in quantum optics and nanophotonics, but this requires a clear understanding of the origin of the photo-response. Conventional electrical and optical measurements, however, cannot unambiguously determine the dominant detection mechanism due to inherent device asymmetry that allows different processes to be simultaneously activated. Here, we innovatively capture snapshots of the photo-response of individual InAs nanowires via high spatial resolution (35 nm) THz photocurrent nanoscopy. By coupling a THz quantum cascade laser to scattering-type scanning near-field optical microscopy (s-SNOM) and monitoring both electrical and optical readouts, we simultaneously measure transport and scattering properties. The spatially resolved electric response provides unambiguous signatures of photo-thermoelectric or bolometric currents whose interplay is discussed as a function of photon density and material doping, therefore providing a route to engineer photo-responses by design.

cond-mat.mtrl-sci↗

arXiv2020

Thermoelectric graphene photodetectors with sub-nanosecond response times at Terahertz frequencies

Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex molecules and cold samples, imaging, metrology, ultra-high-speed data communications, coherent control of quantum systems, quantum optics and for capturing snapshots of ultrafast dynamics, in materials and devices, at the nanoscale. Here, we report room-temperature THz nano-receivers exploiting antenna-coupled graphene field effect transistors integrated with lithographically-patterned high-bandwidth (~100 GHz) chips, operating with a combination of high speed (hundreds ps response time) and high sensitivity (noise equivalent power <120 pWHz-1/2) at 3.4 THz. Remarkably, this is achieved with various antenna and transistor architectures (single-gate, dual-gate), whose operation frequency can be extended over the whole 0.1-10 THz range, thus paving the way for the design of ultrafast graphene arrays in the far infrared, opening concrete perspective for targeting the aforementioned applications.

physics.app-ph↗

arXiv2020

HBN-encapsulated, graphene-based room-temperature terahertz receivers with high speed and low noise

Uncooled Terahertz (THz) photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < $nWHz^{-1/2}$) over a broad (0.5THz-10THz) frequency range are needed for applications in high-resolution spectroscopy (relative accuracy ~ $10^{-11}$), metrology, quantum information, security, imaging, optical communications. However, present THz receivers cannot provide the required balance between sensitivity, speed, operation temperature and frequency range. Here, we demonstrate an uncooled THz PD combining the low (~2000 $k_{B}μm^{-2}$) electronic specific heat of high mobility (> 50000 $cm^{2}V^{-1}s^{-1}$) hBN-encapsulated graphene with the asymmetric field-enhancement produced by a bow-tie antenna resonating at 3 THz. This produces a strong photo-thermoelectric conversion, which simultaneously leads to a combination of high sensitivity (NEP $\leq$ 160 $pWHz^{-1/2}$), fast response time ($\leq 3.3 ns$) and a four orders of magnitude dynamic range, making our devices the fastest, broadband, low noise, room temperature THz PD to date.

physics.app-ph↗

arXiv2019

Fast and Sensitive Terahertz Detection Using an Antenna-Integrated Graphene pn Junction

Although the detection of light at terahertz (THz) frequencies is important for a large range of applications, current detectors typically have several disadvantages in terms of sensitivity, speed, operating temperature, and spectral range. Here, we use graphene as a photoactive material to overcome all of these limitations in one device. We introduce a novel detector for terahertz radiation that exploits the photothermoelectric (PTE) effect, based on a design that employs a dual-gated, dipolar antenna with a gap of 100 nm. This narrow-gap antenna simultaneously creates a pn junction in a graphene channel located above the antenna and strongly concentrates the incoming radiation at this pn junction, where the photoresponse is created. We demonstrate that this novel detector has an excellent sensitivity, with a noise-equivalent power of 80 pW-per-square-root-Hz at room temperature, a response time below 30 ns (setup-limited), a high dynamic range (linear power dependence over more than 3 orders of magnitude) and broadband operation (measured range 1.8-4.2 THz, antenna-limited), which fulfills a combination that is currently missing in the state-of-the-art detectors. Importantly, on the basis of the agreement we obtained between experiment, analytical model, and numerical simulations, we have reached a solid understanding of how the PTE effect gives rise to a THz-induced photoresponse, which is very valuable for further detector optimization.

cond-mat.mes-hall↗

arXiv2019

Optoelectronic devices, plasmonics and photonics with topological insulators

Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from Terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications and the challenges of the emerging fields of topological photonics and thermoplasmonics are discussed.

physics.app-ph↗

arXiv2019

Plasmonics with two-dimensional semiconductors "beyond graphene": from basic research to technological applications

In this minireview, we explore the main features and the prospect of plasmonics with two-dimensional semiconductors. Plasmonic modes in each class of van der Waals semiconductors have their own peculiarities, along with potential technological capabilities. Plasmons of transition-metal dichalcogenides share features typical of graphene, due to their honeycomb structure, but with damping processes dominated by intraband rather than interband transitions, unlike graphene. Spin-orbit coupling strongly affects the plasmonic spectrum of buckled honeycomb lattices (silicene and germanene), while the anisotropic lattice of phosphorene determines different propagation of plasmons along the armchair and zigzag direction. We also review existing applications of plasmonics with two-dimensional materials in the fields of thermoplasmonics, biosensing, and plasma-wave Terahertz detection. Finally, we consider the capabilities of van der Waals heterostructures for innovative low-loss plasmonic devices.

cond-mat.mes-hall↗

arXiv2019

Near-field terahertz probes with room-temperature nanodetectors for subwavelength resolution imaging

Near-field imaging with terahertz (THz) waves is emerging as a powerful technique for fundamental research in photonics and across physical and life sciences. Spatial resolution beyond the diffraction limit can be achieved by collecting THz waves from an object through a small aperture placed in the near-field. However, light transmission through a sub-wavelength size aperture is fundamentally limited by the wave nature of light. Here, we conceive a novel architecture that exploits inherently strong evanescent THz field arising within the aperture to mitigate the problem of vanishing transmission. The sub-wavelength aperture is originally coupled to asymmetric electrodes, which activate the thermo-electric THz detection mechanism in a transistor channel made of flakes of black-phosphorus or InAs nanowires. The proposed novel THz near-field probes enable room-temperature sub-wavelength resolution coherent imaging with a 3.4 THz quantum cascade laser, paving the way to compact and versatile THz imaging systems and promising to bridge the gap in spatial resolution from the nanoscale to the diffraction limit.

physics.app-ph↗

arXiv2019

Black phosphorus nanodevices at terahertz frequencies: photodetectors and future challenges

The discovery of graphene triggered a rapid rise of unexplored two-dimensional materials and heterostructures having optoelectronic and photonics properties that can be tailored on the nanoscale. Among these materials, black phosphorus (BP) has attracted a remarkable interest thanks to many favorable properties, such as high carrier mobility, in-plane anisotropy, the possibility to alter its transport via electrical gating and direct band-gap, that can be tuned by thickness from 0.3 eV (bulk crystalline) to 1.7 eV (single atomic layer). When integrated in a microscopic field effect transistor (FET), a few-layer BP flake can detect Terahertz (THz) frequency radiation. Remarkably, the in-plane crystalline anisotropy can be exploited to tailor the mechanisms that dominate the photoresponse; a BP-based field effect transistor can be engineered to act as a plasma-wave rectifier, a thermoelectric sensor or a thermal bolometer. Here we present a review on recent research on BP detectors operating from 0.26 THz to 3.4 THz with particular emphasis on the underlying physical mechanisms and the future challenges that are yet to be addressed for making BP the active core of stable and reliable optical and electronic technologies.

physics.app-ph↗

arXiv2019

Phase-sensitive terahertz imaging using room-temperature near-field nanodetectors

Imaging applications in the terahertz (THz) frequency range are severely restricted by diffraction. Near-field scanning probe microscopy is commonly employed to enable mapping of the THz electromagnetic fields with sub-wavelength spatial resolution, allowing intriguing scientific phenomena to be explored such as charge carrier dynamics in nanostructures and THz plasmon-polaritons in novel 2D materials and devices. High-resolution THz imaging, so far, has been relying predominantly on THz detection techniques that require either an ultrafast laser or a cryogenically-cooled THz detector. Here, we demonstrate coherent near-field imaging in the THz frequency range using a room-temperature nanodetector embedded in the aperture of a near-field probe, and an interferometric optical setup driven by a THz quantum cascade laser (QCL). By performing phase-sensitive imaging of strongly confined THz fields created by plasmonic focusing we demonstrate the potential of our novel architecture for high-sensitivity coherent THz imaging with sub-wavelength spatial resolution.

physics.optics↗

arXiv2019

Thermoelectric terahertz photodetectors based on selenium-doped black phosphorus flakes

Chemical doping of bulk black phosphorus is a well-recognized way to reduce surface oxidation and degradation. Here, we report on the fabrication of terahertz frequency detectors consisting of an antenna-coupled field-effect transistor (FET) with an active channel of Se-doped black phosphorus. Our devices show a maximum room-temperature hole mobility of 1780 cm2V-1s-1 in a SiO2-encapsulated FET. A room-temperature responsivity of 3 V/W was observed, with a noise-equivalent power of 7 nWHz-1/2 at 3.4 THz, comparable with the state-of-the-art room-temperature photodetectors operating at the same frequency. Therefore, the inclusion of Se dopants in the growth process of black phosphorus crystals enables the optimization of the transport and optical performances of FETs in the far-infrared with a high potential for the development of BP-based electro-optical devices. We also demonstrate that the flake thickness can be tuned according to the target application. Specifically, thicker flakes (>80 nm) are suitable for applications in which high mobility and high speed are essential, thinner flakes (<10 nm) are more appropriate for applications requiring high on/off ratios, while THz photodetection is optimal with flakes 30-40 nm thick, due to the larger carrier density tunability.

cond-mat.mes-hall↗

arXiv2018

Heterostructured hBN-BP-hBN Nanodetectors at THz Frequencies

Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the Terahertz (THz) frequency range. Despite the exceptional versatility, they commonly require challenging epitaxial growth procedures due to the need of clean and abrupt interfaces, which proved to be a major obstacle for the realization of room-temperature (RT), high-efficiency devices, like source, detectors or modulators, especially in the far-infrared. Two-dimensional (2D) layered materials, like graphene and phosphorene, recently emerged as a reliable, flexible and versatile alternative for devising efficient RT detectors operating at Terahertz frequencies. We here combine the benefit of the heterostructure architecture with the exceptional technological potential of 2D layered nanomaterials; by reassembling the thin isolated atomic planes of hexagonal borum nitride (hBN) with a few layer phosphorene (black phosphorus (BP)) we mechanically stacked hBN/BP/hBN heterostructures to devise high-efficiency THz photodetectors operating in the 0.3-0.65 THz range from 4K to 300K with a record SNR=20000.

cond-mat.mes-hall↗