arXiv subjects

Libo Gao

Publications and source records attributed to Libo Gao.

10 recordsLinked to original sources

arXiv2026

Carrier-coupled ultrafast structural dynamics and interlayer energy transport of supported transition metal dichalcogenide heterostructures

Understanding the electronic coupling and energy flow across layered two-dimensional heterostructures (HSs) is crucial to the exploitation of carrier and phonon transports as well as thermal management in next-generation optoelectronic devices. By using reflection ultrafast electron diffraction, we directly examine photoinduced out-of-plane structural dynamics of supported MoS2/WS2 bilayer HSs and their individual monolayers. Experimental evidence reveals the launch of ultrafast carrier-coupled intralayer atomic motions due to interlayer charge transfer across the van der Waals (vdW) heterojunctions that is absent for individual monolayers. Such a notable carrier-lattice correlation is in addition to the electronic coupling manifested in the enhanced optical absorption for HSs. Also, different pathways of energy flow as a result of carrier-phonon coupling and phonon scattering are reported with the corresponding characteristic times. On longer timescales, relaxation of thermalized atomic motions can be sufficiently described by a thermal transport model. A higher thermal boundary conductance (TBC) across MoS2/WS2 HSs is obtained compared to those at the monolayer-substrate interfaces; however, the similar TBC values suggest comparable couplings of phonons across vdW contacts. These results further shed light on the optical, phonon, and interfacial thermal properties of vertically-stacked vdW HSs.

cond-mat.mes-hall↗

arXiv2025

Chemical vapor deposition growth of continuous monolayer antiferromagnetic CrOCl films

The discovery of two-dimensional magnetic materials has provided an ideal platform for exploring physical phenomena in the two-dimensional limit. However, intrinsic two-dimensional antiferromagnetic materials have been rarely reported, limiting systematic studies of their electronic properties. The discovery of novel intrinsic two-dimensional antiferromagnets and the development of robust synthesis strategies, therefore, remain significant challenges. Here, we report the chemical vapor deposition synthesis of CrOCl monolayer films and nanosheets that exhibit excellent air stability. The CrOCl morphology is tunable, ranging from two-dimensional nanosheets to three-dimensional flower-like structures, with lateral sizes ranging from several microns to continuous monolayer films. Structural characterization confirms the materials composition and high crystalline quality. Furthermore, magnetic measurements, supported by theoretical calculations, reveal a N\'eel temperature for CrOCl of ~14 K. This work provides a reliable route for preparing two-dimensional antiferromagnetic materials.

cond-mat.mes-hall↗

arXiv2025

Ripple-assisted adsorption of noble gases on graphene at room temperature

Controllable gas adsorption is critical for both scientific and industrial fields, and high-capacity adsorption of gases on solid surfaces provides a significant promise due to its high-safety and low-energy consumption. However, the adsorption of nonpolar gases, particularly noble gases, poses a considerable challenge under atmospheric pressure and room temperature (RT). Here, we theoretically simulate and experimentally realize the stable adsorption of noble gases like xenon (Xe), krypton (Kr), argon (Ar), and helium (He) on highly rippled graphene at RT. The elemental characteristics of adsorbed Xe are confirmed by electron energy loss spectroscopy and X-ray photoelectron spectroscopy. The adsorbed gas atoms are crystalized with periodic arrangements. These adsorbed noble gases on graphene exhibit high stability at RT and can be completely desorbed at approximately 350 {\deg}C without damaging the intrinsic lattice of graphene. The structural and physical properties of graphene are significantly influenced by the adsorbed gas, and they fully recover after desorption. Additionally, this controllable adsorption could be generalized to other layered adsorbents such as NbSe2, MoS2 and carbon nanotubes. We anticipate that this ripple-assisted adsorption will not only re-define the theoretical framework of gas adsorption, but also accelerate advancements in gas storage and separation technologies, as well as enhance the applications in catalysis, surface modification, and other related fields.

cond-mat.mtrl-sci↗

arXiv2024

Blood Works for Graphene Production

Blood, a ubiquitous and fundamental carbohydrate material composed of plasma, red blood cells, white blood cells, and platelets, has been playing an important role in biology, life science, history, and religious study, while graphene has garnered significant attention due to its exceptional properties and extensive range of potential applications. Achieving environmentally friendly, cost-effective growth using hybrid precursors and obtaining high-quality graphene through a straightforward CVD process has been traditionally considered mutually exclusive. This study demonstrates that we can produce high-quality graphene domains with controlled thickness through a one-step growth process at atmospheric pressure using blood as a precursor. Raman spectroscopy confirms the uniformity of the blood-grown graphene films, and observing the half-integer quantum Hall effect in the measured devices highlights its outstanding electronic properties. This unprecedented approach opens possibilities for blood application, facilitating an unconventional route in graphene growth applications.

cond-mat.mes-hall↗

arXiv2023

Sensing orbital hybridization of graphene-diamond interface with a single spin

Interfacial interactions are crucial in a variety of fields and can greatly affect the electric, magnetic, and chemical properties of materials. Among them, interface orbital hybridization plays a fundamental role in the properties of surface electrons such as dispersion, interaction, and ground states. Conventional measurements of electronic states at interfaces such as scanning tunneling microscopes are all based on electric interactions which, however, suffer from strong perturbation on these electrons. Here we unveil a new experimental detection of interface electrons based on the weak magnetic interactions between them and the nitrogen-vacancy (NV) center in diamond. With negligible perturbation on the interface electrons, their physical properties can be revealed by the NV spin coherence time. In our system, the interface interaction leads to significant decreases in both the density and coherence time of the electron spins at the diamond-graphene interface. Furthermore, together with electron spin resonance spectra and first-principle calculations, we can retrieve the effect of interface electron orbital hybridization. Our study opens a new pathway toward the microscopic probing of interfacial electronic states with weak magnetic interactions and provides a new avenue for future research on material interfaces.

quant-ph↗

arXiv2022

Electrical switching of ferro-rotational order in nano-thick 1T-TaS$_2$ crystals

Hysteretic switching of domain states is a salient character of all ferroic materials and the foundation for their multifunctional applications. Ferro-rotational order is emerging as a new type of ferroic order featuring structural rotations, but its controlled switching remains elusive due to its invariance under both time reversal and spatial inversion. Here, we demonstrate electrical switching of ferro-rotational domain states in nanometer-thick 1T-TaS$_2$ crystals in its charge-density-wave phases. Cooling from the high-symmetry phase to the ferro-rotational phase under an external electric field induces domain state switching and domain wall formation, realized in a simple two-terminal configuration using a volt-scale voltage. Although the electric field does not couple with the order due to symmetry mismatch, it drives domain wall propagation to give rise to reversible, durable, and nonvolatile isothermal state switching at room temperature. These results pave the path for manipulation of the ferro-rotational order and its nanoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2022

Observation of anomalous amplitude modes in the kagome metal CsV$_3$Sb$_5$

The charge-density wave (CDW) phase is often accompanied by the condensation of a soft acoustic phonon mode, giving rise to lattice distortion and charge density modulation. This picture was challenged for the recently discovered kagome metal CsV$_3$Sb$_5$, based on the evidence of absence of soft phonons. Here we report the observation of Raman-active CDW amplitude modes in this material, which are collective excitations typically thought to emerge out of frozen soft phonons. The amplitude modes strongly hybridize with other superlattice modes, imparting them with clear temperature-dependent frequency shift and broadening, rarely seen in other known CDW materials. Both the mode mixing and the large amplitude mode frequencies suggest that the CDW exhibits the character of strong electron-phonon coupling, a regime in which acoustic phonon softening can cease to exist. The observation of amplitude modes in the absence of soft phonons highlights the unconventional nature of the CDW in CsV$_3$Sb$_5$.

cond-mat.mtrl-sci↗

arXiv2020

Tuning the electronic structure of {\alpha}-antimonene monolayer through interface engineering

The interfacial charge transfer from the substrate may influence the electronic structure of the epitaxial van der Waals (vdW) monolayers and thus their further technological applications. For instance, the freestanding Sb monolayer in puckered honeycomb phase ({\alpha}-antimonene), the structural analog of black phosphorene, was predicted to be a semiconductor, but the epitaxial one behaves as a gapless semimetal when grown on the Td-WTe2 substrate. Here, we demonstrate that interface engineering can be applied to tune the interfacial charge transfer and thus the electron band of epitaxial monolayer. As a result, the nearly freestanding (semiconducting) {\alpha}-antimonene monolayer with a band gap of ~170 meV was successfully obtained on the SnSe substrate. Furthermore, a semiconductor-semimetal crossover is observed in the bilayer {\alpha}-antimonene. This study paves the way towards modifying the electron structure in two-dimensional vdW materials through interface engineering.

cond-mat.mtrl-sci↗

arXiv2019

Van der Waals heteroepitaxial growth of monolayer Sb in puckered honeycomb structure

Atomically thin two-dimensional (2D) crystals have gained tremendous attentions owing to their potential impacts to the future electronics technologies, as well as the exotic phenomena emerging in these materials. Monolayer of α phase Sb (α-antimonene) that shares the same puckered structure as black phosphorous, has been predicted to be stable with precious properties. However, the experimental realization still remains challenging. Here, we successfully grow high-quality monolayer α-antimonene, with the thickness finely controlled. The α-antimonene exhibits great stability upon exposure to air. Combining scanning tunneling microscope, density functional theory calculations and transport measurement, it is found that the electron band crossing the Fermi level exhibits a linear dispersion with a fairly small effective mass, and thus a good electrical conductivity. All of these properties make the α-antimonene promising in the future electronic applications.

cond-mat.mtrl-sci↗

arXiv2019

Turning ZrTe5 into semiconductor through atomic intercalation

In this work, we use the liquid ammonia method to successfully intercalate potassium atoms into ZrTe5 single crystal, and find a transition from semimetal to semiconductor at low temperature in the intercalated ZrTe5. The resistance anomalous peak is gradually suppressed and finally disappears with increasing potassium concentration. Whilst, the according sign reversal is always observed in the Hall resistance measurement. We tentatively attribute the semimetal-semiconductor transition to the lattice expansion induced by atomic intercalation and thereby a larger energy band gap.

cond-mat.mtrl-sci↗