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arXiv · 1903.00644

Turning ZrTe5 into semiconductor through atomic intercalation

Qi-Yuan Li·Yang-Yang Lv·Jinghui Wang·Song Bao·Wei Shi·Li Zhu·Wei-Min Zhao·Cheng-Long Xue·Zhen-Yu Jia·Libo Gao·Y. B. Chen·Jinsheng Wen·Yan-Feng Chen·Shao-Chun Li
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Abstract

In this work, we use the liquid ammonia method to successfully intercalate potassium atoms into ZrTe5 single crystal, and find a transition from semimetal to semiconductor at low temperature in the intercalated ZrTe5. The resistance anomalous peak is gradually suppressed and finally disappears with increasing potassium concentration. Whilst, the according sign reversal is always observed in the Hall resistance measurement. We tentatively attribute the semimetal-semiconductor transition to the lattice expansion induced by atomic intercalation and thereby a larger energy band gap.

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Qi-Yuan Li, Yang-Yang Lv, Jinghui Wang, Song Bao, Wei Shi, Li Zhu, Wei-Min Zhao, Cheng-Long Xue, Zhen-Yu Jia, Libo Gao, Y. B. Chen, Jinsheng Wen, Yan-Feng Chen, Shao-Chun Li. 2019-03-02. Turning ZrTe5 into semiconductor through atomic intercalation. https://doi.org/10.1007/s11433-018-9329-4

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