arXiv subjects

Lin Gan

Publications and source records attributed to Lin Gan.

40 records · Page 3Linked to original sources

arXiv2016

CGMOS: Certainty Guided Minority OverSampling

Handling imbalanced datasets is a challenging problem that if not treated correctly results in reduced classification performance. Imbalanced datasets are commonly handled using minority oversampling, whereas the SMOTE algorithm is a successful oversampling algorithm with numerous extensions. SMOTE extensions do not have a theoretical guarantee during training to work better than SMOTE and in many instances their performance is data dependent. In this paper we propose a novel extension to the SMOTE algorithm with a theoretical guarantee for improved classification performance. The proposed approach considers the classification performance of both the majority and minority classes. In the proposed approach CGMOS (Certainty Guided Minority OverSampling) new data points are added by considering certainty changes in the dataset. The paper provides a proof that the proposed algorithm is guaranteed to work better than SMOTE for training data. Further experimental results on 30 real-world datasets show that CGMOS works better than existing algorithms when using 6 different classifiers.

cs.LG↗

arXiv2014

Quasi-1D graphene superlattices formed on high index surfaces

We report preparation of large area quasi-1D monolayer graphene superlattices on a prototypical high index surface Cu(410)-O and characterization by Raman spectroscopy, Auger electron spectroscopy (AES), low energy electron diffraction (LEED), scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The periodically stepped substrate gives a 1D modulation to graphene, forming a superlattice of the same super-periodicity. Consequently the moire pattern is also quasi-1D, with a different periodicity. Scanning tunneling spectroscopy measurements revealed new Dirac points formed at the superlattice Brillouin zone boundary as predicted by theories.

cond-mat.mtrl-sci↗

arXiv2011

Multicolor Graphene Nanoribbon/Semiconductor Nanowire Heterojunction Light-Emitting Diodes

We report novel graphene nanoribbon (GNR)/semiconductor nanowire (SNW) heterojunction light-emitting diodes (LEDs) for the first time. The GNR and SNW have a face-to-face contact structure, which has the merit of bigger active region. ZnO, CdS, and CdSe NWs were employed in our case. At forward biases, the GNR/SNW heterjunction LEDs could emit light with wavelengths varying from ultraviolet (380 nm) to green (513 nm) to red (705 nm), which were determined by the band-gaps of the involved SNWs. The mechanism of light emitting for the GNR/SNW heterojunction LED was discussed. Our approach can easily be extended to other semiconductor nano-materials. Moreover, our achievement opens the door to next-generation display technologies, including portable, "see-through", and conformable products.

cond-mat.mes-hall↗

arXiv2010

A Simple and Scalable Graphene Patterning Method and Its Application in CdSe Nanobelt/Graphene Schottky Junction Solar Cells

We develop a simple and scalable graphene patterning method using electron-beam or ultraviolet lithography followed by a lift-off process. This method, with the merits of: high pattern resolution and high alignment accuracy, free from additional etching or harsh process, universal to arbitrary substrates, compatible to Si microelectronic technology, can be easily applied to diverse graphene-based devices, especially in array-based applications, where large-scale graphene patterns are desired. We have applied this method to fabricate CdSe nanobelt (NB)/graphene Schottky junction solar cells, which have potential application in integrated nano-optoelectronic systems. Typical as-fabricated solar cell shows excellent photovoltaic behavior with an open-circuit voltage of ~ 0.51 V, a short-circuit current density of ~ 5.75 mA/cm2, and an energy conversion efficiency of ~1.25%. We attribute the high performance of the cell to the as-patterned high-performance graphene, which can form an ideal Schottky contact with CdSe NB. Our results suggest both the developed graphene patterning method and the as-fabricated CdSe nanobelt (NB)/graphene Schottky junction solar cells have reachable application prospect.

cond-mat.mes-hall↗