arXiv subjects

Linfeng Wu

Publications and source records attributed to Linfeng Wu.

4 recordsLinked to original sources

arXiv2026

Layer-engineered quantum anomalous Hall effect in twisted rhombohedral graphene

Realizing programmable topological states in quantum anomalous Hall (QAH) insulators requires the ability to design and dynamically tune their topological invariant, the Chern number C. Here, we report a designer QAH platform based on twisted rhombohedral graphene family, in which C becomes a programmable and electrically tunable degree of freedom. By engineering the layer configuration in twisted monolayer-rhombohedral N-layer graphene, denoted as (1+N)L, we realize QAH states with C=N at moire filling v=1, where the layer number N=3,4,5 directly sets the Chern number. Beyond such static layer programming, we demonstrate in-situ electrical control. In a twisted monolayer-trilayer device, the sign of C (chirality) can be switched by electrostatic doping or displacement field. Most strikingly, in twisted Bernal bilayer-rhombohedral tetralayer graphene denoted as (2+4)L, we drive a displacement-field-induced topological phase transition between two distinct QAH states with C=3 and C=4 in a single device. Our work establishes a layer-engineered and electrically tunable platform that transitions topological quantum matter from discovery to design, opening the way toward on-demand engineering of correlated topological states and reconfigurable topological electronics.

cond-mat.mes-hall↗

arXiv2025

Diverse high-Chern-number quantum anomalous Hall insulators in twisted rhombohedral graphene

Quantum anomalous Hall (QAH) insulators with high Chern number (C) enables multiple dissipationless edge channels for low-power-consumption electronics. We report the realization of multiple high-C QAH insulators including C=3,5,6, and 7 in twisted monolayer-rhombohedral pentalayer graphene. In twist angles of approximately 1.40{\deg}, we observe QAH effect with C=5 at a filling of one electron per moir\'e unit cell, persisting up to 2 Kelvin. Furthermore, incommensurate QAH insulators with C=5,6, and 7 emerge at partial fillings. In twist angles of 0.89{\deg}, Chern insulators with C=3 and C=6 appear at fillings of two and three electrons, respectively. Our findings establish twisted rhombohedral multilayer graphene as a highly tunable platform for multichannel, dissipationless electronics and for the exploration of exotic quantum Hall states beyond traditional Landau level paradigm.

cond-mat.mes-hall↗

arXiv2024

Engineering band structures of two-dimensional materials with remote moire ferroelectricity

The stacking order and twist angle provide abundant opportunities for engineering band structures of two-dimensional materials, including the formation of moire bands, flat bands, and topologically nontrivial bands. The inversion symmetry breaking in rhombohedral-stacked transitional metal dichalcogenides (TMDCs) endows them with an interfacial ferroelectricity associated with an out-of-plane electric polarization. By utilizing twist angle as a knob to construct rhombohedral-stacked TMDCs, antiferroelectric domain networks with alternating out-of-plane polarization can be generated. Here, we demonstrate that such spatially periodic ferroelectric polarizations in parallel-stacked twisted WSe2 can imprint their moire potential onto a remote bilayer graphene. This remote moire potential gives rise to pronounced satellite resistance peaks besides the charge-neutrality point in graphene, which are tunable by the twist angle of WSe2. Our observations of ferroelectric hysteresis at finite displacement fields suggest the moire is delivered by a long-range electrostatic potential. The constructed superlattices by moire ferroelectricity represent a highly flexible approach, as they involve the separation of the moire construction layer from the electronic transport layer. This remote moire is identified as a weak potential and can coexist with conventional moire. Our results offer a comprehensive strategy for engineering band structures and properties of two-dimensional materials by utilizing moire ferroelectricity.

cond-mat.mtrl-sci↗

arXiv2024

Electronic ferroelectricity in monolayer graphene for multifunctional neuromorphic electronics

Ferroelectricity is intriguing for its spontaneous electric polarization, which is switchable by an external electric field. Expanding ferroelectric materials to two-dimensional limit will provide versatile applications for the development of next-generation nonvolatile devices. Conventional ferroelectricity requires the materials consisting of at least two constituent elements associated with polar crystalline structures. Monolayer graphene as an elementary two-dimensional material unlikely exhibits ferroelectric order due to its highly centrosymmetric hexagonal lattices. Nevertheless, two-dimensional moire superlattices offer a powerful way to engineer diverse electronic orders in non-polar materials. Here, we report the observations of electronic ferroelectricity in monolayer graphene by introducing asymmetric moire superlattice at the graphene/h-BN interface. Utilizing Hall measurements, the electric polarization is identified to stem from electron-hole dipoles, suggesting the electronic dynamics of the observed ferroelectricity. Standard polarization-electric field hysteresis loops, as well as unconventional multiple switchable polarization states, have been achieved. By in-situ comparing with control devices, we found that the electronic ferroelectricity in graphene moire systems is independent of layer number of graphene and the corresponding fine band structures. Furthermore, we demonstrate the applications of this ferroelectric moire structures in multi-state non-volatile data storage and the emulation of versatile synaptic behaviors, including short-term plasticity, long-term potentiation and long-term depression. This work not only enriches the fundamental understanding of ferroelectricity, but also demonstrates the promising applications of graphene in multi-state memories and neuromorphic computing.

cond-mat.mes-hall↗