arXiv subjects

Ling-Jie Zhou

Publications and source records attributed to Ling-Jie Zhou.

At least 19 recordsLinked to original sources

arXiv2026

Observation and Control of Spontaneous Magnon Emission from Spin Ensembles in 2D Hexagonal Boron Nitride

Hybrid systems consisting of color centers and magnetic materials provide an appealing solid-state platform for advancing the burgeoning quantum technological revolution. Exploring novel coupling mechanisms between optically active spin defects and quantum degrees of freedom is directly relevant in this context. Here, we report observation and control of spontaneous magnon emission from boron-vacancy centers in 2D hexagonal boron nitride (hBN), an unconventional qubit-magnon dipole coupling channel that dominates in the near-zero temperature limit. The spontaneous magnon emission process starts to be overshadowed by thermal magnon effect as temperature increases, reflecting the crossover from an emission-dominated, effectively cold magnon reservoir to a thermally occupied spin bath where absorption and stimulated processes restore balance. By increasing the spin defect density, we further present that spontaneous magnon emission into a common spin bath could help establish quantum correlations in dense hBN spin ensembles. Our results are quantitatively captured by detailed theoretical modeling, bringing insights into understanding qubit-magnon coupling, correlated spin dynamics, and many-body physics of color centers in the quantum regime.

cond-mat.mes-hall↗

arXiv2026

Imaging Surface Magnetization in Altermagnetic MnTe Films

Altermagnets with pronounced spin-splitting band structure, unconventional magnetic and crystal symmetries, and exotic magneto-transport properties have received immense interest in cutting-edge spintronics, materials science, and condensed matter physics research. Microscopic imaging of spontaneous magnetic domains and phases in altermagnets constitutes an important step for investigating their underlying material properties, mechanisms, and spin behaviors. Taking advantage of scanning-probe quantum microscopy, here we report nanoscale quantum sensing of a prototypical altermagnet candidate $α$-MnTe. We visualize evanescent magnetization and the associated magnetic domains in epitaxial MnTe films, which allows external magnetic fields to control the intrinsic altermagnetic order and configurations. By evaluating a series of MnTe films with different thicknesses down to the atomic scale, we further present evidence for the interfacial origin of the observed weak magnetization and show its correlation with the anomalous Hall effect in MnTe film. Our results advance the current understanding of emergent altermagnetism, providing insights into future material design of altermagnet-integrated spintronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Designing Magnetic Topological Insulator Trilayers for Highly-Efficient Spin-Orbit Torque Switching

Spin-orbit torque (SOT) enables efficient electrical control of magnetization, offering a pathway towards low-power spintronic devices. Magnetic topological insulators (TIs), with spin-momentum-locked surface states and intrinsic ferromagnetism, provide a unique platform for realizing SOT switching of edge current chirality in quantum anomalous Hall (QAH) insulators. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI trilayers with controlled layer thicknesses on heat-treated SrTiO3(111) substrates. Electrical transport measurements reveal that SOT-driven magnetization reversal and the associated switching of edge current chirality are governed by the SrTiO3(111) substrate-induced charging effect, which generates an asymmetric chemical-potential alignment between the top and bottom magnetic TI layers. Furthermore, we demonstrate that the switching polarity and efficiency can be tuned through heterostructure design, gate voltage, and in-plane magnetic field, consistent with SOT symmetry. These findings identify chemical potential asymmetry as the origin of the large SOT switching ratio in magnetic TI trilayers and establish a route for electrical control of edge current chirality in QAH insulators. This work advances the understanding of SOT switching mechanism in magnetic topological materials and paves the way for next-generation, energy-efficient QAH-based logic and memory devices.

cond-mat.mes-hall↗

arXiv2026

Surface-State-Driven Anomalous Hall Effect in Altermagnetic MnTe Films

Altermagnets have recently emerged as a new class of magnetic materials that combine compensated magnetic order with spin-split electronic band structures. In this work, we employ molecular beam epitaxy to grow MnTe thin films with controlled thickness on InP(111)A substrates. By performing angle-resolved photoemission spectroscopy measurements, we observe a large spin splitting of ~230 meV for bulk bands well below the Fermi level and identify surface states that cross the Fermi level. Electrical transport measurements reveal that a robust anomalous Hall (AH) effect persists down to 2 K and an AH sign reversal occurs near 175 K. By systematically tuning film thickness, growth conditions, and interfacial structure, we demonstrate that the AH response in MnTe films originates from the Berry curvature of surface states rather than from bulk bands. Our first-principles calculations reveal that this surface-state-driven AH effect is imprinted by the bulk altermagnetic order and remains unchanged for terminations with opposite Mn magnetic orientations. Our results establish a unique surface transport probe of bulk altermagnetism, demonstrate interface engineering as an effective route to generate and control the AH effect in altermagnets, and provide a unified understanding of the AH response in altermagentic MnTe films.

cond-mat.mtrl-sci↗

arXiv2025

Boundary-Bulk Interplay in Nonlinear Topological Transport

Nonlinear transport has emerged as a powerful approach to probe the quantum geometry of electronic wavefunctions, such as Berry curvature and quantum metric, in topological materials. While nonlinear responses governed by bulk quantum geometry and band topology are well understood, the role of boundary modes (e.g., edge, surface, and hinge states) in nonlinear transport of topological materials remains largely unexplored. In this work, we demonstrate boundary-bulk interplay in nonlinear transport, including second-harmonic Hall and nonreciprocal longitudinal responses, in molecular beam epitaxy-grown magnetic topological insulator heterostructures. We find that the nonlinear transport is maximized when the sample is tuned slightly away from the well-quantized states, including the quantum anomalous Hall and axion insulator states. The sign and amplitude of the nonlinear transport depend on electrode configuration, magnetic order, and carrier type, establishing boundary mode transport as the dominant contributor. These findings, supported by symmetry analysis and nonlinear Landauer-Büttiker formalism, demonstrate that nonlinear transport in topological materials is governed by the interplay between boundary and bulk states. We further derive a universal relation between different lead voltages from electrode geometry symmetry, which allows us to distinguish nonlinear boundary transport from bulk contributions. Our work highlights the critical role of electrodes in nonlinear transport, which is absent in nonlinear optics, and establishes boundary modes as a key origin of the giant nonlinear response in nearly bulk-insulating topological materials. This insight opens new opportunities for engineering nonlinear transport through boundary-bulk interplay in future device applications of topological materials.

cond-mat.mes-hall↗

arXiv2025

Gate-Tunable Ambipolar Josephson Current in a Topological Insulator

Dirac surface states in a topological insulator (TI) with proximity-induced superconductivity offer a promising platform for realizing topological superconductivity and Majorana physics. However, in TIs, the Josephson effect is usually observed in regimes where transport is dominated by either substantial bulk conduction channels or unipolar surface states. In this work, we demonstrate gate-tunable ambipolar Josephson current in lateral Josephson junction (JJ) devices based on bulk-insulating (Bi,Sb)2Te3 thin films grown by molecular beam epitaxy (MBE). For thinner films, the supercurrent exhibits pronounced gate-tunable ambipolar behavior and is significantly suppressed as the chemical potential approaches the Dirac point, yet persists across it. In contrast, thicker films exhibit a much weaker ambipolar response. Moreover, we find that the supercurrent becomes significantly less resilient to external magnetic fields when the chemical potential is tuned near the Dirac point in both thickness regimes. Our numerical simulations demonstrate the ambipolar behavior of these TI JJ devices and attribute the asymmetric supercurrent observed in thicker TI films to the coexistence of Dirac surface states and bulk conduction channels. The demonstration of gate-tunable ambipolar Josephson transport in MBE-grown TI films paves the way for realizing Dirac-surface-state-mediated topological superconductivity and establishes a foundation for future exploration of electrically tunable Majorana modes.

cond-mat.mes-hall↗

arXiv2025

Interlayer Exchange Coupling-Induced Critical-Metal-to-Insulator Phase Transition in Quantum Anomalous Hall Insulators

Interlayer exchange coupling (IEC) between two magnetic layers sandwiched by a nonmagnetic spacer layer plays a critical role in shaping the magnetic properties of such heterostructures. The quantum anomalous Hall (QAH) effect has been realized in a structure composed of two magnetically doped topological insulator (TI) layers separated by an undoped TI layer. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI sandwiches with varying thicknesses of the middle TI spacer layer. The well-quantized QAH effect is observed in all these samples, and the IEC modulates its critical behavior between the top and bottom magnetic TI layers. Near the plateau phase transition (PPT), thinner QAH samples exhibit a two-dimensional critical metal behavior with nearly temperature-independent longitudinal resistance. In contrast, thicker QAH samples behave as a three-dimensional insulator with reduced longitudinal resistance at higher temperatures. We employ a magnetic TI Hamiltonian with random magnetic domains to understand the IEC-induced critical-metal-to-insulator transition observed near QAH PPT.

cond-mat.mes-hall↗

arXiv2025

Interlayer Coupling-Induced Quantum Phase Transition in Quantum Anomalous Hall Multilayers

A quantum phase transition arises from competition between different ground states and is typically accessed by varying a single physical parameter near absolute zero temperature. The quantum anomalous Hall (QAH) effect with high Chern number C has recently been achieved in magnetic topological insulator (TI) multilayers. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI penta-layers by varying the thickness of the middle magnetic TI layer, designated as m quintuple layers. Electrical transport measurements demonstrate a quantum phase transition between C = 1 and C = 2 QAH states. For m 1 and m 2, the sample exhibits the well-quantized C = 1 and C = 2 QAH states, respectively. For 1 m 2, we observe a monotonic decrease in Hall resistance from h/e2 to h/2e2 with increasing m, accompanied by a peak in the longitudinal resistance. The quantum phase transition between C = 1 and C = 2 QAH states is attributed to the weakening of the interlayer coupling between the top and the bottom C = 1 QAH layers. Our findings provide a scalable strategy for engineering QAH devices with a tunable Chern number. This approach enables precise control and enhanced functionality in chiral edge current-based electronic devices.

cond-mat.mes-hall↗

arXiv2024

Diamond Micro-Chip for Quantum Microscopy

The nitrogen vacancy (NV) center in diamond is an increasingly popular quantum sensor for microscopy of electrical current, magnetization, and spins. However, efficient NV-sample integration with a robust, high-quality interface remains an outstanding challenge to realize scalable, high-throughput microscopy. In this work, we characterize a diamond micro-chip (DMC) containing a (111)-oriented NV ensemble; and demonstrate its utility for high-resolution quantum microscopy. We perform strain imaging of the DMC and find minimal detrimental strain variation across a field-of-view of tens of micrometer. We find good ensemble NV spin coherence and optical properties in the DMC, suitable for sensitive magnetometry. We then use the DMC to demonstrate wide-field microscopy of electrical current, and show that diffraction-limited quantum microscopy can be achieved. We also demonstrate the deterministic transfer of DMCs with multiple materials of interest for next-generation electronics and spintronics. Lastly, we develop a polymer-based technique for DMC placement. This work establishes the DMC's potential to expand the application of NV quantum microscopy in materials, device, geological, biomedical, and chemical sciences.

physics.app-ph↗

arXiv2024

Coexistence of Superconductivity and Antiferromagnetism in Topological Magnet MnBi2Te4 Films

The interface of two materials can harbor unexpected emergent phenomena. One example is interface-induced superconductivity. In this work, we employ molecular beam epitaxy to grow a series of heterostructures formed by stacking together two non-superconducting antiferromagnetic materials, an intrinsic antiferromagnetic topological insulator MnBi2Te4 and an antiferromagnetic iron chalcogenide FeTe. Our electrical transport measurements reveal interface-induced superconductivity in these heterostructures. By performing scanning tunneling microscopy and spectroscopy measurements, we observe a proximity-induced superconducting gap on the top surface of the MnBi2Te4 layer, confirming the interaction between superconductivity and antiferromagnetism in the MnBi2Te4 layer. Our findings will advance the fundamental inquiries into the topological superconducting phase in hybrid devices and provide a promising platform for the exploration of chiral Majorana physics in MnBi2Te4-based heterostructures.

cond-mat.supr-con↗

arXiv2024

Engineering Plateau Phase Transition in Quantum Anomalous Hall Multilayers

The plateau phase transition in quantum anomalous Hall (QAH) insulators corresponds to a quantum state wherein a single magnetic domain gives way to multiple magnetic domains and then re-converges back to a single magnetic domain. The layer structure of the sample provides an external knob for adjusting the Chern number C of the QAH insulators. Here, we employ molecular beam epitaxy (MBE) to grow magnetic topological insulator (TI) multilayers with an asymmetric layer structure and realize the magnetic field-driven plateau phase transition between two QAH states with odd Chern number change ΔC. In multilayer structures with C=+-1 and C=+-2 QAH states, we find two characteristic power-law behaviors between temperature and the scaling variables on the magnetic field at transition points. The critical exponents extracted for the plateau phase transitions with ΔC=1 and ΔC=3 in QAH insulators are found to be nearly identical, specifically, k1~0.390+-0.021 and k2~0.388+-0.015, respectively. We construct a four-layer Chalker-Coddington network model to understand the consistent critical exponents for the plateau phase transitions with ΔC=1 and ΔC=3. This work will motivate further investigations into the critical behaviors of plateau phase transitions with different ΔC in QAH insulators and provide new opportunities for the development of QAH chiral edge current-based electronic and spintronic devices.

cond-mat.mes-hall↗

arXiv2023

Three-Dimensional Quantum Anomalous Hall Effect in Magnetic Topological Insulator Trilayers of Hundred-Nanometer Thickness

Magnetic topological states refer to a class of exotic phases in magnetic materials with their non-trivial topological property determined by magnetic spin configurations. An example of such states is the quantum anomalous Hall (QAH) state, which is a zero magnetic field manifestation of the quantum Hall effect. Current research in this direction focuses on QAH insulators with a thickness of less than 10nm. The thick QAH insulators in the three-dimensional(3D) regime are limited, largely due to inevitable bulk carriers being introduced in thick magnetic TI samples. Here, we employ molecular beam epitaxy (MBE) to synthesize magnetic TI trilayers with a thickness of up to ~106 nm. We find these samples exhibit well-quantized Hall resistance and vanishing longitudinal resistance at zero magnetic field. By varying magnetic dopants, gate voltages, temperature, and external magnetic fields, we examine the properties of these thick QAH insulators and demonstrate the robustness of the 3D QAH effect. The realization of the well-quantized 3D QAH effect indicates that the nonchiral side surface states of our thick magnetic TI trilayers are gapped and thus do not affect the QAH quantization. The 3D QAH insulators of hundred-nanometer thickness provide a promising platform for the exploration of fundamental physics, including axion physics and image magnetic monopole, and the advancement of electronic and spintronic devices to circumvent Moore's law.

cond-mat.mes-hall↗

arXiv2023

Interface-Induced Superconductivity in Magnetic Topological Insulator-Iron Chalcogenide Heterostructures

When two different electronic materials are brought together, the resultant interface often shows unexpected quantum phenomena, including interfacial superconductivity and Fu-Kane topological superconductivity (TSC). Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferromagnetic iron chalcogenide (FeTe). We discover emergent interface-induced superconductivity in these heterostructures and demonstrate the trifecta occurrence of superconductivity, ferromagnetism, and topological band structure in the magnetic TI layer, the three essential ingredients of chiral TSC. The unusual coexistence of ferromagnetism and superconductivity can be attributed to the high upper critical magnetic field that exceeds the Pauli paramagnetic limit for conventional superconductors at low temperatures. The magnetic TI/FeTe heterostructures with robust superconductivity and atomically sharp interfaces provide an ideal wafer-scale platform for the exploration of chiral TSC and Majorana physics, constituting an important step toward scalable topological quantum computation.

cond-mat.mes-hall↗

arXiv2023

Dirac-Fermion-Assisted Interfacial Superconductivity in Epitaxial Topological Insulator/Iron Chalcogenide Heterostructures

Over the last decade, the possibility of realizing topological superconductivity (TSC) has generated much excitement, mainly due to the potential use of its excitations (Majorana zero modes) in a fault-tolerant topological quantum computer 1,2. TSC can be created in electronic systems where the topological and superconducting orders coexist3, motivating the continued exploration of candidate material platforms to this end. Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures that host emergent interfacial superconductivity when a non-superconducting antiferromagnet (FeTe) is interfaced with a topological insulator (TI) (Bi, Sb)2Te3 wherein the chemical potential can be tuned through varying the Bi/Sb ratio. By performing in-vacuo angle-resolved photoemission spectroscopy (ARPES) and ex-situ electrical transport measurements, we find that the superconducting transition temperature and the upper critical magnetic field are suppressed when the chemical potential approaches the Dirac point. This observation implies a direct correlation between the interfacial superconductivity and Dirac electrons of the TI layer. We provide evidence to show that the observed interfacial superconductivity and its chemical potential dependence is the result of the competition between the Ruderman-Kittel-Kasuya-Yosida-type ferromagnetic coupling mediated by Dirac surface states and antiferromagnetic exchange couplings that generate the bicollinear antiferromagnetic order in the FeTe layer. The Dirac-fermion-assisted interfacial superconductivity in (Bi,Sb)2Te3/FeTe heterostructures provides a new approach to probe TSC and Majorana physics in hybrid devices and potentially constitutes an alternative platform for topological quantum computation.

cond-mat.mes-hall↗

arXiv2023

Axion Insulator State in Hundred-Nanometer-Thick Magnetic Topological Insulator Sandwich Heterostructures

An axion insulator is a three-dimensional (3D) topological insulator (TI), in which the bulk maintains the time-reversal symmetry or inversion symmetry but the surface states are gapped by surface magnetization. The axion insulator state has been observed in molecular beam epitaxy (MBE)-grown magnetically doped TI sandwiches and exfoliated intrinsic magnetic TI MnBi2Te4 flakes with an even number layer. All these samples have a thickness of ~10 nm, near the 2D-to-3D boundary. The coupling between the top and bottom surface states in thin samples may hinder the observation of quantized topological magnetoelectric response. Here, we employ MBE to synthesize magnetic TI sandwich heterostructures and find that the axion insulator state persists in a 3D sample with a thickness of ~106 nm. Our transport results show that the axion insulator state starts to emerge when the thickness of the middle undoped TI layer is greater than ~3 nm. The 3D hundred-nanometer-thick axion insulator provides a promising platform for the exploration of the topological magnetoelectric effect and other emergent magnetic topological states, such as the high-order TI phase.

cond-mat.mes-hall↗

arXiv2022

Environmental Doping-Induced Degradation of the Quantum Anomalous Hall Insulators

The quantum anomalous Hall (QAH) insulator is a topological quantum state with quantized Hall resistance and zero longitudinal resistance in the absence of an external magnetic field. The QAH insulator carries spin-polarized dissipation-free chiral edge current and thus provides a unique opportunity to develop energy-efficient transformative information technology. Despite promising advances on the QAH effect over the past decade, the QAH insulator has thus far eluded any practical applications. In addition to its low working temperature, the QAH state in magnetically doped topological insulator (TI) films/heterostructures usually deteriorates with time in ambient conditions. In this work, we prepare three QAH devices with similar initial properties and store them in different environments to investigate the evolution of their transport properties. The QAH device without a protection layer in air show clear degradation and becomes hole-doped with the charge neutral point shifting significantly to positive gate voltages. The QAH device kept in an argon glove box without a protection layer shows no measurable degradation after 560 hours and the device protected by a 3 nm AlOx protection layer in air shows minimal degradation with stable QAH properties. Our work shows a route to preserve the dissipation-free chiral edge state in QAH devices for potential applications in quantum information technology.

cond-mat.mes-hall↗

arXiv2022

Creation of Chiral Interface Channels for Quantized Transport in Magnetic Topological Insulator Multilayer Heterostructures

One-dimensional (1D) topologically protected states are usually formed at the interface between two-dimensional (2D) materials with different topological invariants. Therefore, 1D chiral interface channels (CICs) can be created at the boundary of two quantum anomalous Hall (QAH) insulators with different Chern numbers. Such a QAH junction can function as a chiral edge current distributer at zero magnetic field, but its realization remains challenging. Here, by employing an in-situ mechanical mask, we use molecular beam epitaxy (MBE) to synthesize QAH insulator junctions, in which two QAH insulators with different Chern numbers are connected along a 1D junction. For the junction between C = 1 and C = -1 QAH insulators, we observe quantized transport and demonstrate the appearance of the two parallel propagating CICs along the magnetic domain wall at zero magnetic field. Moreover, since the Chern number of the QAH insulators in magnetic topological insulator (TI)/TI multilayers can be tuned by altering magnetic TI/TI bilayer periods, the junction between two QAH insulators with arbitrary Chern numbers can be achieved by growing different periods of magnetic TI/TI on the two sides of the sample. For the junction between C = 1 and C = 2 QAH insulators, our quantized transport shows that a single CIC appears at the interface. Our work lays down the foundation for the development of QAH insulator-based electronic and spintronic devices, topological chiral networks, and topological quantum computations.

cond-mat.mes-hall↗

arXiv2022

Confinement-Induced Chiral Edge Channel Interaction in Quantum Anomalous Hall Insulators

In quantum anomalous Hall (QAH) insulators, the interior is insulating but electrons can travel with zero resistance along one-dimensional conducting paths known as chiral edge channels (CECs). These CECs have been predicted to be confined to the one-dimensional (1D) edges and exponentially decay in the two-dimensional (2D) bulk. In this work, we present the results of a systematic study of QAH devices fashioned in a Hall bar geometry of different widths. At the charge neutral point, the QAH effect persists in a Hall bar device with a width of only ~72 nm, implying the intrinsic decaying length of CECs is less than ~36 nm. In the electron-doped regime, we find that the Hall resistance deviates quickly from the quantized value when the sample width is less than 1 um. Our theoretical calculations suggest that the deviation from the quantized Hall resistance in narrow QAH samples originates from the interaction between two opposite CECs mediated by disorder-induced bulk states in QAH insulators, consistent with our experimental observations.

cond-mat.mes-hall↗