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Lior Klein

Publications and source records attributed to Lior Klein.

At least 19 recordsLinked to original sources

Widefield Quantum Sensor for Vector Magnetic Field Imaging of Micromagnetic Structures

Many spintronic, magnetic-memory, and neuromorphic devices rely on spatially varying magnetic fields. Quantitatively imaging these fields with full vector information over extended areas remains a major challenge. Existing probes either offer nanoscale resolution at the cost of slow scanning, or widefield imaging with limited vector sensitivity or material constraints. Quantum sensing with nitrogen-vacancy (NV) centers in diamond promises to bridge this gap, but a practical camera-based vector magnetometry implementation on relevant microstructures has not been demonstrated. Here we adapt a commercial widefield microscope to implement a camera-compatible pulsed optically detected magnetic resonance protocol to reconstruct stray-field vectors from microscale devices. By resolving the Zeeman shifts of the four NV orientations, we reconstruct the stray-field vector generated by microfabricated permalloy structures that host multiple stable remanent states. Our implementation achieves a spatial resolution of $\approx 0.52 ~\mu\mathrm{m}$ across an $83~\mu\mathrm{m} \times 83~\mu\mathrm{m}$ field of view and a peak sensitivity of $ (828 \pm 142)~\mathrm{nT\,Hz^{-1}}$, with acquisition times of only a few minutes. These results establish pulsed widefield NV magnetometry on standard microscopes as a practical and scalable tool for routine vector-resolved imaging of complex magnetic devices.

quant-ph

Two-Axis planar Hall magnetic field sensors with sub nanoTesla resolution

Planar Hall effect (PHE) magnetic sensors are attractive for various applications where the field resolution is required in the range of sub-nano Tesla or in Pico Tesla. Here we present a detailed noise study of the PHE sensors consisting of two or three intersecting ellipses. It can be used to measure two axes of the magnetic field in the sensor plane in particular along the two perpendicular easy axes in the overlapping region for two intersecting ellipses and three easy axes at an angle of 60 degrees for three crossing ellipses. Thus, for each remanent magnetic state in the overlap area, the sensor can measure the vector component of the magnetic field perpendicular to the direction of the remanent magnetization. The two field components are measured with a field resolution less than 200 pT/sqrt(Hz) at 10 Hz and 350 pT/sqrt(Hz) at 1 Hz in the same region, while maintaining a similar size and noise level of a single-axis sensor. Furthermore, we discuss here the possible route for future improvement of the field resolution

cond-mat.str-el

Current-induced nonuniform enhancement of sheet resistance in Ar+ irradiated SrTiO3

The sheet resistance Rs of Ar+ irradiated SrTiO3 in patterns with a length scale of several microns increases significantly below 40 K in connection with driving currents exceeding a certain threshold. The initial lower Rs is recovered upon warming with accelerated recovery around 70 and 160 K. Scanning superconducting quantum interference device microscopy shows local irreversible changes in the spatial distribution of the current with a length scale of several microns. We attribute the observed nonuniform enhancement of Rs to the attraction of the charged single-oxygen and dioxygen vacancies by the crystallographic domain boundaries in SrTiO3. The boundaries, which are nearly ferroelectric below 40 K, are polarized by the local electrical field associated with the driven current and the clustered vacancies which suppress conductivity in their vicinity and yield a noticeable enhancement in the device resistance when the current path width is on the order of the boundary extension. The temperatures of accelerated conductivity recovery are associated with the energy barriers for the diffusion of the two types of vacancies.

cond-mat.supr-con

A four-state magnetic tunnel junction switchable with spin-orbit torques

We present a magnetic tunnel junction (MTJ) where its two ferromagnetic layers are in the form of a single ellipse (SE) and two-crossing ellipses (TCE). The MTJ exhibits four distinct resistance states corresponding to the four remanent states of the TCE structure. Flowing current in an underlying Ta layer generates in the adjacent TCE structure spin-orbit torques which induce field-free switching of the four-state MTJ between all its resistance states. The demonstrated four-state MTJ is an important step towards fabricating multi-level MTJs with numerous resistance states which could be important in various spintronics applications, such as multi-level magnetic random access or neuromorphic memory.

physics.app-ph

Stabilization of exponential number of discrete remanent states with localized spin-orbit torques

Using bilayer films of $β$-Ta/Ni$_{0.8}$Fe$_{0.2}$, we fabricate structures consisting of two, three and four crossing ellipses which exhibit shape-induced bi-axial, tri-axial and quadro-axial magnetic anisotropy in the crossing area, respectively. Structures consisting of N crossing ellipses can be stabilized in 2N remanent states by applying (and removing) an external magnetic field. However, we show that with field-free spin-orbit torques induced by flowing currents in individual ellipses, the number of remanent states grows to 2$^\text{N}$. Furthermore, when the current flows between the edges of different ellipses the number of remanent states jumps to 2$^\text{2N}$, including states which exhibit a $π$-Néel domain wall in the overlap area. The very large number of accessible remanent magnetic states that are exhibited by the relatively simple magnetic structures paves the way for intriguing spintronics applications including memory devices.

cond-mat.mes-hall

Monitoring superparamagnetic Langevin behavior of individual ${\rm SrRuO_3}$ nanostructures

Patterned nanostructures on the order of 200 nm $\times$ 200 nm of the itinerant ferromagnet ${\rm SrRuO_3}$ give rise to superparamagnetic behavior below the Curie temperature (${\rm \sim 150 \ K}$) down to a sample-dependent blocking temperature. We monitor the superparamagnetic fluctuations of an individual volume and demonstrate that the field dependence of the time-averaged magnetization is well described by the Langevin equation. On the other hand, the rate of the fluctuations suggests that the volume in which the magnetization fluctuates is smaller by more than an order of magnitude. We suggest that switching via nucleation followed by propagation gives rise to Langevin behavior of the total volume, whereas the switching rate is determined by a much smaller nucleation volume.

cond-mat.mes-hall

Thermally assisted current-induced magnetization reversal in SrRuO3

We inject a sequence of 1 ms current pulses into uniformly magnetized patterns of the itinerant ferromagnet SrRuO3 until a magnetization reversal is detected. We detect the effective temperature during the pulse and find that the cumulative pulse time required to induce magnetization reversal depends exponentially on 1/T. In addition, we find that the cumulative pulse time also depends exponentially on the current amplitude. These observations indicate current-induced magnetization reversal assisted by thermal fluctuations.

cond-mat.mtrl-sci

Thermally activated recovery of electrical conductivity in LaAlO3/SrTiO3

Patterned structures of LaAlO3/SrTiO3 that exhibit a decrease in their electrical conductivity below 30 K, recover their higher conductivity upon warming in a thermally activated process. Two dominant energy barriers $E_b$ are identified: $E_{b1}=0.224\pm0.003$ eV related to conductivity recovery near 70 K and $E_{b2}=0.44\pm0.015$ eV related to conductivity recovery near 160 K. We discuss possible linkage to structural defects such as dislocations and twin boundaries.

cond-mat.str-el

Angular dependence of the Hall effect of lsmo films

We find that the Hall effect resistivity ($ρ_{xy}$) of thin films of \lsmo\ varies as a function of the angle $θ$ between the applied magnetic field and the film normal as $ρ_{xy}=a\cos θ+ b\cos 3θ$, where $|b|$ increases with increasing temperature and decreases with increasing magnetic field. We find that the angular dependence of the longitudinal resistivity and the magnetization cannot fully explain the surprising term $b$, suggesting it is a manifestation of an intrinsic transport property.

cond-mat.str-el

Indication for macroscopic quantum tunneling below 10 K in nanostructures of SrRuO3

We study magnetization reversal of nanostructures of the itinerant ferromagnet SrRuO3 (Tc~150 K). We find that down to 10 K the magnetization reversal is dominated by thermal activation. From 2 - 10 K, the magnetization reversal becomes independent of temperature, raising the possibility for reversal dominated by macroscopic quantum tunneling (MQT). A 10 K crossover to MQT is consistent with the extremely large anisotropy field (~7 T) of SrRuO3.

cond-mat.mes-hall

Interplay between sheet resistance increase and magnetotransport properties in ${\rm LaAlO_3}/{\rm SrTiO_3}$

We find that the sheet resistance ($R_s$) of patterned samples of ${\rm LaAlO_3}/{\rm SrTiO_3}$ with a length scale of several microns may increase significantly at low temperatures in connection with driving electrical currents and applying in-plane magnetic fields. As the samples are warmed up, $R_s$ recovers to its original value with accelerated recovery near ${\rm 70 \ K}$ and ${\rm 160 \ K}$. Concomitantly with the increase in $R_s$, the carrier density and the mobility decrease and magnetotransport properties which may be linked to magnetism are suppressed.

cond-mat.mtrl-sci

Current-induced magnetization reversal in SrRuO3

We inject current pulses into uniformly magnetized patterns of thin films of the itinerant ferromagnet SrRuO3, while monitoring the effective temperature of the patterns during the current injection. We gradually increase the amplitude of the pulses until magnetization reversal occurs. We observe magnetization reversal induced by current above a temperature-dependent threshold and show that this effect is not simply due to sample heating or Oersted fields. We discuss the applicability of the current-induced spin-wave instability scenario.

cond-mat.str-el

Scaling and field-induced crossover of the anomalous Hall effect in SrRuO3

We measure the anomalous Hall effect (AHE) resistivity $ρ_{xy}$ in thin films of the itinerant ferromagnet SrRuO$_{3}$. At low temperatures, the AHE coefficient $R_{s}$ varies with $ρ_{xx}^2$ in agreement with side jumps and Berry phase models. At higher temperatures, $R_{s}$ reaches a peak and then changes sign just below $T_{c}$. We find that for all films studied $R_{s}$ scales with resistivity in the entire ferromagnetic phase. SrRuO$_{3}$ films with very low residual resistivity exhibit field induced sign changes of the AHE at low temperatures, suggesting an $ω_c τ$ related crossover.

cond-mat.str-el

Scaling of the anomalous Hall effect in SrRuO$_{3}$

We measure the anomalous Hall effect (AHE) resistivity $ρ_{xy}$ in thin films of the itinerant ferromagnet SrRuO$_{3}$. At low temperatures, the AHE coefficient $R_{s}$ varies with $ρ_{xx}^2$, and at higher temperatures, $R_{s}$ reaches a peak and then changes sign just below $T_{c}$. We find that for all films studied $R_{s}$ scales with resistivity in the entire ferromagnetic phase. We attribute the observed behavior to the contribution of the extrinsic side jumps mechanism and the intrinsic Karplus-Luttinger (Berry phase) mechanism including the effect of finite scattering rates.

cond-mat.str-el

Field induced resistivity anisotropy in SrRuO3 films

SrRuO3 is an itinerant ferromagnet with orthorhombic structure and uniaxial magnetocrystalline anisotropy - features expected to yield resistivity anisotropy. Here we explore changes in the resistivity anisotropy of epitaxial SrRuO3 films due to induced magnetization in the paramagnetic state by using the planar Hall effect. We find that the effect of the induced magnetization on the in-plane anisotropy is strongly angular dependent, and we provide a full description of this behavior at 160 K for induced magnetization in the (001) plane.

cond-mat.str-el

Antisymmetric magnetoresistance of the SrTiO3/LaAlO3 interface

The longitudinal resistance $R_{xx}$ of the SrTiO3/LaAlO3 interface with magnetic fields applied perpendicular to the interface has an antisymmetric term (namely, $R_{xx}(H)\neq R_{xx}(-H)$) which increases with decreasing temperature and increasing field. We argue that the origin of this phenomenon is a non-homogeneous Hall effect with clear contribution of an extraordinary Hall effect, suggesting the presence of non-uniform field-induced magnetization.

cond-mat.str-el

Relaxation of transport properties in electron doped SrTiO3

We electron-dope single crystal samples of SrTiO_3 by exposing them to Ar^+ irradiation and observe carrier mobility similar in its magnitude and temperature dependence to the carrier mobility in other electron-doped SrTiO3 systems. We find that some transport properties are time-dependent. In particular, the sheet resistance increases with time at a temperature-dependent rate, suggesting an activation barrier on the order of 1 eV. We attribute the relaxation effects to diffusion of oxygen vacancies - a process with energy barrier similar to the observed activation energy.

cond-mat.other

Efficient current-induced domain-wall displacement SrRuO3

We demonstrate current-induced displacement of ferromagnetic domain walls in sub-micrometer fabricated patterns of SrRuO3 films. The displacement, monitored by measuring the extraordinary Hall effect, is induced at zero applied magnetic field and its direction is reversed when the current is reversed. We find that current density in the range of 10^9 - 10^10 A/m^2 is sufficient for domain-wall displacement when the depinning field varies between 50 to 500 Oe. These results indicate relatively high efficiency of the current in displacing domain walls which we believe is related to the narrow width ~3 nm of domain walls in this compound.

cond-mat.other