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Lior Klein

Publications and source records attributed to Lior Klein.

27 records · Page 2Linked to original sources
arXiv2007

Efficient current-induced domain-wall displacement SrRuO3

We demonstrate current-induced displacement of ferromagnetic domain walls in sub-micrometer fabricated patterns of SrRuO3 films. The displacement, monitored by measuring the extraordinary Hall effect, is induced at zero applied magnetic field and its direction is reversed when the current is reversed. We find that current density in the range of 10^9 - 10^10 A/m^2 is sufficient for domain-wall displacement when the depinning field varies between 50 to 500 Oe. These results indicate relatively high efficiency of the current in displacing domain walls which we believe is related to the narrow width ~3 nm of domain walls in this compound.

cond-mat.other↗
arXiv2006

Determination of the resistivity anisotropy of SrRuO$_{3}$ by measuring the planar Hall effect

We have measured the planar Hall effect in epitaxial thin films of the itinerant ferromagnet SrRuO3 patterned with their current paths at different angles relative to the crystallographic axes. Based on the results, we have determined that SrRuO3 exhibits small resistivity anisotropy in the entire temperature range of our measurements (between 2 to 300 K); namely, both above and below its Curie temperature (~150 K). It means that in addition to anisotropy related to magnetism, the resistivity anisotropy of SrRuO3 has an intrinsic, nonmagnetic source. We have found that the two sources of anisotropy have competing effects.

cond-mat.other↗
arXiv2005

Uniaxial magnetocrystalline anisotropy in ${\rm CaRuO_3}$

${\rm CaRuO_3}$ is a paramagnetic metal and since its low temperature resistivity is described by $ρ=ρ_0+AT^γ$ with $γ\sim 1.5$, it is also considered a non-Fermi liquid (NFL) metal. We have performed extensive magnetoresistance and Hall effect measurements of untwinned epitaxial films of ${\rm CaRuO_3}$. These measurements reveal that ${\rm CaRuO_3}$ exhibits uniaxial magnetocrystalline anisotropy. In addition, the low-temperature NFL behavior is most effectively suppressed when a magnetic field is applied along the easy axis, suggesting that critical spin fluctuations, possibly due to proximity of a quantum critical phase transition, are related to the NFL behavior.

nlin.PS↗
arXiv2004

Testing the Berry phase model for extraordinary Hall effect in SrRuO3

Recently it has been suggested that the complicated temperature dependence of the extraordinary Hall effect (EHE) in the itinerant ferromagnet SrRuO3 could be explained by the Berry phase effect in the crystal momentum space. We test this model by measurements of EHE as a function of an applied magnetic field at a constant temperature and show that the results seem to contradict the Berry phase mechanism.

cond-mat.mtrl-sci↗
arXiv2003

Paramagnetic anisotropic magnetoresistance in thin films of SrRuO3

SrRuO3 is an itinerant ferromagnet and in its thin film form when grown on miscut SrTiO3 it has Tc of ~ 150 K and strong uniaxial anisotropy. We measured both the Hall effect and the magnetoresistance (MR) of the films as a function of the angle between the applied field and the normal to the films at temperatures above Tc. We extracted the extraordinary Hall effect that is proportional to the perpendicular component of the magnetization and thus the MR for each angle of the applied field could be correlated with the magnitude and orientation of the induced magnetization. We successfully fit the MR data with a second order magnetization expansion, which indicates large anisotropic MR in the paramagnetic state. The extremum values of resistivity are not obtained for currents parallel or perpendicular to the magnetization, probably due to the crystal symmetry.

cond-mat.mtrl-sci↗
arXiv2003

Large anisotropy in the paramagnetic susceptibility of SrRuO3 films

By using the extraordinary Hall effect in SrRuO3 films we performed sensitive measurements of the paramagnetic susceptibility in this itinerant ferromagnet, from Tc (~ 150 K) to 300 K. These measurements, combined with measurements of magnetoresistance, reveal that the susceptibility, which is almost isotropic at 300 K, becomes highly anisotropic as the temperature is lowered, diverging along a single crystallographic direction in the vicinity of Tc. The results provide a striking manifestation of the effect of exceptionally large magnetocrystalline anisotropy in the paramagnetic state of a 4d itinerant ferromagnet.

cond-mat.mtrl-sci↗
arXiv2003

Angular dependence of domain wall resistivity in SrRuO$_{\bf 3}$ films

${\rm SrRuO_3}$ is a 4d itinerant ferromagnet (T$_{c}$ $\sim $150 K) with stripe domain structure. Using high-quality thin films of SrRuO$_{3}$ we study the resistivity induced by its very narrow ($\sim 3$ nm) Bloch domain walls, $ρ_{DW}$ (DWR), at temperatures between 2 K and T$_{c}$ as a function of the angle, $θ$, between the electric current and the ferromagnetic domains walls. We find that $ρ_{DW}(T,θ)=\sin^2θρ_{DW}(T,90)+B(θ)ρ_{DW}(T,0)$ which provides the first experimental indication that the angular dependence of spin accumulation contribution to DWR is $\sin^2θ$. We expect magnetic multilayers to exhibit a similar behavior.

cond-mat.str-el↗