arXiv subjects

Long You

Publications and source records attributed to Long You.

At least 19 recordsLinked to original sources

arXiv2026

Nonlinear spin-Wave Doppler effect for flexible tuning of magnonic frequencies

We theoretically propose a nonlinear spin-wave Doppler effect, in which the time-dependent motion of a magnetic energy boundary acts as an active frequency modulator, directly converting boundary-induced phase dynamics into instantaneous spectral synthesis for propagating spin-wave modes. In contrast to the conventional linear Doppler effect governed by constant relative velocity, this mechanism enables dynamic phase-to-frequency transduction, generating high-order harmonics, magnonic frequency combs, and coherent chirped sidebands, without requiring nonlinear magnon-magnon coupling or multi-magnon scattering. Micromagnetic simulations on voltage-controlled anisotropy boundaries in ferroelectric/ferromagnetic (FE/FM) heterostructures demonstrate that the comb spacing and spectral topology are determined solely by boundary kinematics, confirming direct Doppler phase coupling between boundary motion and spin-wave propagation. These results establish moving magnetic-energy boundaries as a new class of on-chip spectral synthesizers and define a coherent and energy-efficient framework for flexible tuning of magnonic frequencies, fundamentally distinct from traditional passive scattering or nonlinear multi-magnon mechanisms.

physics.app-ph↗

arXiv2025

Spin Fluctuations-induced Unconventional Transverse Spin Current in Spin Degenerate Antiferromagnet

Modern magnetic memory technology requires unconventional transverse spin current to achieve deterministic switching of perpendicular magnetization. Spin current in antiferromagnets (AFMs) has been long thought to be trivial as nonmagnets. Recently, a class of spin-splitting AFMs has been shown to be able to generate unconventional spin current for spin-orbit torque (SOT) applications. However, such AFMs requires specific symmetry breaking, and have been largely restricted by the limited material candidates. Here, we reveal universal spin fluctuation-induced unconventional transverse spin current in conventional spin degenerate AFMs at finite temperature by taking collinear (AFM) L10-MnPt as an example. The field-free switching of perpendicular magnetization was achieved via out-of-plane anti-damping-like SOT, leveraging the spin current with both y- and z-spin polarizations in heterostructures with MnPt functioning as spin current source. Based on symmetry analyses and experimental characterizations of current-induced spin torques, we find that the spin current generated by L10-MnPt exhibits anisotropy that varies with the current direction, enforced by the low symmetry magnetic point group when its N\'eel vector is along [110]. From a fundamental perspective, it would be intriguing to uncover a mechanism underlying the emergence of unconventional spin currents in spin degenerate antiferromagnets, which is highly desirable for spintronic applications.

physics.app-ph↗

arXiv2024

All-electric mimicking synaptic plasticity based on the noncollinear antiferromagnetic device

Neuromorphic computing, which seeks to replicate the brain's ability to process information, has garnered significant attention due to its potential to achieve brain-like computing efficiency and human cognitive intelligence. Spin-orbit torque (SOT) devices can be used to simulate artificial synapses with non-volatile, high-speed processing and endurance characteristics. Nevertheless, achieving energy-efficient all-electric synaptic plasticity emulation using SOT devices remains a challenge. We chose the noncollinear antiferromagnetic Mn3Pt as spin source to fabricate the Mn3Pt-based SOT device, leveraging its unconventional spin current resulting from magnetic space breaking. By adjusting the amplitude, duration, and number of pulsed currents, the Mn3Pt-based SOT device achieves nonvolatile multi-state modulated by all-electric SOT switching, enabling emulate synaptic behaviors like excitatory postsynaptic potential (EPSP), inhibitory postsynaptic potential (IPSP), long-term depression (LTD) and the long-term potentiation (LTP) process. In addition, we show the successful training of an artificial neural network based on such SOT device in recognizing handwritten digits with a high recognition accuracy of 94.95 %, which is only slightly lower than that from simulations (98.04 %). These findings suggest that the Mn3Pt-based SOT device is a promising candidate for the implementation of memristor-based brain-inspired computing systems.

physics.app-ph↗

arXiv2024

Field-free current-induced magnetization switching of a room temperature van der Waals magnet for neuromorphic computing

Spin orbit torque (SOT) has become a promising approach to efficiently manipulate the magnetization switching in spintronic devices. As a main factor to impact the device performance, the high quality interface is essentially desired, which can be readily acquired by using the two-dimensional (2D) van der Waals (vdW) materials. Recently, a 2D ferromagnetic material Fe3GaTe2 has been discovered to possess the above-room-temperature Curie temperature and strong perpendicular magnetic anisotropy (PMA), providing an excellent candidate to build spintronic devices. On the other hand, an external magnetic field is necessary for the SOT-driven deterministic switching of perpendicular magnetization, which has become a block for the real applications. Here, we realize the field-free SOT switching of Fe3GaTe2 at room temperature based on the Fe3GaTe2/MnPt heterostructure. In addition, inspired by the superiority of 2D materials in 3D heterogeneous integration, we explore the potential of our device in the computing in memory (CIM). With the application of the current pulses, the gradual switching of our device at zero field imitates the function of artificial synapse in the convolutional neural network (CNN), achieving a high accuracy (~92.8%) pattern recognition. Our work proposes a feasible solution for field-free SOT switching in 2D vdW spintronic devices, which paves the way for applications in magnetic memory and neuromorphic computing.

physics.app-ph↗

arXiv2022

Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces

Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW material has largely impedes its development in practical spintronics devices. Inspired by the recently discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic order above room temperature and sizable perpendicular magnetic anisotropy, we investigate the basic electronic structure and magnetic properties of Fe3GaTe2 as well as tunneling magnetoresistance effect in magnetic tunnel junctions (MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principles calculations. It is found that Fe3GaTe2 with highly spin-polarized Fermi surface ensures that such magnetic tunnel junctions may have prominent tunneling magnetoresistance effect at room temperature even comparable to existing conventional AlOx and MgO-based MTJs. Our results suggest that Fe3GaTe2-based MTJs may be the promising candidate for realizing long-waiting full magnetic vdW spintronic devices.

cond-mat.mtrl-sci↗

arXiv2022

Nanoscale three-dimensional magnetic sensing with a probabilistic nanomagnet driven by spin-orbit torque

Detection of vector magnetic fields at nanoscale dimensions is critical in applications ranging from basic material science, to medical diagnostic. Meanwhile, an all-electric operation is of great significance for achieving a simple and compact sensing system. Here, we propose and experimentally demonstrate a simple approach to sensing a vector magnetic field at nanoscale dimensions, by monitoring a probabilistic nanomagnet's transition probability from a metastable state, excited by a driving current due to SOT, to a settled state. We achieve sensitivities for Hx, Hy, and Hz of 1.02%/Oe, 1.09%/Oe and 3.43%/Oe, respectively, with a 200 x 200 nm^2 nanomagnet. The minimum detectable field is dependent on the driving pulse events N, and is expected to be as low as 1 uT if N = 3 x 10^6.

cond-mat.mtrl-sci↗

arXiv2022

Chaotic spin precession in antiferromagnetic domain walls

In contrast with rich investigations about the translation of an antiferromagnetic (AFM) texture, spin precession in an AFM texture is seldom concerned for lacking an effective driving method. In this work, however, we show that under an alternating spin-polarized current with spin along the AFM anisotropy axis, spin precession can be excited in an AFM DW. Especially, chaotic spin precession occurs at moderate interfacial Dzyaloshinskii-Moriya interaction (DMI), which contributes to a nonlinear term in the dynamic equation of DW precession. Also, crisis-induced intermittent chaos appears when the current density is higher than a critical value. This work not only paves a way to unravel rich spin precession behaviors in an AFM texture but also provides guidelines for developing ultrafast spintronic devices based on new physical principles.

cond-mat.mtrl-sci↗

arXiv2021

Mass-energy equivalence for terahertz magnon excitation in antiferromagnetic domain walls

The theory of special relativity is one of the most significant achievements in modern physics, with several important predictions such as time dilation, size contraction for a moving object and mass-energy equivalence. Recent studies have demonstrated size contraction for an antiferromagnetic (AFM) domain wall (DW). Here, we show the mass-energy equivalence by numerically investigating the excitation of terahertz (THz) magnons from a moving AFM DW under the magnetic anisotropy energy gradient. The energy of magnons comes from the loss of DW mass, accompanied with a DW width broadening, overcoming the Lorentz contraction effect. Our results pave the way to study relativistic physics in AFM textures and to efficiently generate THz magnons by electric means.

cond-mat.mes-hall↗

arXiv2020

Van der Waals Multiferroic Tunnel Junctions

Multiferroic tunnel junctions (MFTJs) have aroused significant interest due to their functional properties useful for non-volatile memory devices. So far, however, all the existing MFTJs have been based on perovskite-oxide heterostructures limited by a relatively high resistance-area (RA) product unfavorable for practical applications. Here, using first-principles calculations, we explore spin-dependent transport properties of van der Waals (vdW) MFTJs which consist of two-dimensional (2D) ferromagnetic FenGeTe2 (n = 3, 4, 5) electrodes and 2D ferroelectric In2Se3 barrier layers. We demonstrate that such FemGeTe2/In2Se3/FenGeTe2 (m, n = 3, 4, 5) MFTJs exhibit multiple non-volatile resistance states associated with different polarization orientation of the ferroelectric In2Se3 layer and magnetization alignment of the two ferromagnetic FenGeTe2 layers. We find a remarkably low RA product which makes the proposed vdW MFTJs superior to the conventional MFTJs in terms of their promise for non-volatile memory applications.

cond-mat.mes-hall↗

arXiv2020

Voltage-Induced Inertial Domain Wall Motion in an Antiferromagnetic Nanowire

Racetrack memory based on magnetic domain walls (DWs) motion exhibits advantages of small volume and high reading speed. When compared to current-induced DW motion, voltage-induced DW motion exhibits lower dissipation. On the other hand, the DW in an antiferromagnet (AFM) moves at a high velocity with weak stray field. In this work, the AFM DW motion induced by a gradient of magnetic anisotropy energy under a voltage pulse has been investigated in theory. The dynamics equation for the DW motion was derived. The solution indicates that the DW velocity is higher than 100 m/s, and because of inertia, the DW is able to keep moving at a speed of around 100 m/s for several nano seconds after turning off the voltage in a period of pulse. The mechanism for this DW inertia is explained based on the Lagrangian route. On the other hand, a spin wave is emitted while the DW is moving, yet the DW is still able to move at an ever increasing velocity with enlarging DW width. This indicates energy loss from emission of spin wave is less than the energy gain from the effective field of the gradient of anisotropy energy.

physics.app-ph↗

arXiv2019

Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction

Large magnetoresistance effect controlled by electric field rather than magnetic field or electric current is a preferable routine for designing low power consumption magnetoresistance-based spintronic devices. Here we propose an electric-field controlled antiferromagnetic (AFM) tunnel junction with structure of piezoelectric substrate/Mn3Pt/SrTiO3/Pt operating by the magnetic phase transition (MPT) of antiferromagnet Mn3Pt through its magneto-volume effect. The transport properties of the proposed AFM tunnel junction have been investigated by employing first-principles calculations. Our results show that a magnetoresistance over hundreds of percent is achievable when Mn3Pt undergoes MPT from a collinear AFM state to a non-collinear AFM state. Band structure analysis based on density functional calculations shows that the large TMR can be attributed to the joint effect of significant different Fermi surface of Mn3Pt at two AFM phases and the band symmetry filtering effect of the SrTiO3 tunnel barrier. In addition, other than single-crystalline tunnel barrier, we also discuss the robustness of the proposed magnetoresistance effect by considering amorphous AlOx barrier. Our results may open perspective way for effectively electrical writing and reading of the AFM state and its application in energy efficient magnetic memory devices.

cond-mat.mes-hall↗

arXiv2019

Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes

Van der Waals (vdW) heterostructures, stacking different two-dimensional materials, have opened up unprecedented opportunities to explore new physics and device concepts. Especially interesting are recently discovered two-dimensional magnetic vdW materials, providing new paradigms for spintronic applications. Here, using density functional theory (DFT) calculations, we investigate the spin-dependent electronic transport across vdW magnetic tunnel junctions (MTJs) composed of Fe3GeTe2 ferromagnetic electrodes and a graphene or hexagonal boron nitride (h-BN) spacer layer. For both types of junctions, we find that the junction resistance changes by thousands of percent when the magnetization of the electrodes is switched from parallel to antiparallel. Such a giant tunneling magnetoresistance (TMR) effect is driven by dissimilar electronic structure of the two spin-conducting channels in Fe3GeTe2, resulting in a mismatch between the incoming and outgoing Bloch states in the electrodes and thus suppressed transmission for an antiparallel-aligned MTJ. The vdW bounding between electrodes and a spacer layer makes this result virtually independent of the type of the spacer layer, making the predicted giant TMR effect robust with respect to strain, lattice mismatch, interface distance and other parameters which may vary in the experiment. We hope that our results will further stimulate experimental studies of vdW MTJs and pave the way for their applications in spintronics.

cond-mat.mtrl-sci↗

arXiv2018

The reason for the tilting of domain wall with Dzyaloshinskii-Moriya interaction from a microscopic dynamical perspective

The interfacial Dzyaloshinskii-Moriya interaction (DMI) of a heavy metal (HM)/ferromagnetic (FM) metal heterostructure is vital to the current-induced domain wall motion (CIDWM) at an ultrahigh velocity. However, strong DMI also tilts the moving domain wall (DW) plane, and the mechanism for this tilting is not quite clear. In this work, we have found that this tilting may be understood based on a micromagnetic calculation from a microscopic dynamical perspective. The DMI-induced antisymmetric moment structure at the two boundaries of the track needs to be paid attention. In the early stage of CIDWM induced by spin-orbit torque, this antisymmetry is destroyed. Afterwards, the moments at the two boundaries experience distinct rotation processes with different energy paths towards their final stable antisymmetric moment structure. This results in different initial velocities of the local DW regions at the two boundaries. In mathematics, this distinct DW dynamical progresses at the two boundaries can be approximately revealed by modifying the initial conditions for solving the Thiele equations.

physics.comp-ph↗

arXiv2018

The high-frequency dynamics of domain walls with strong Dzyaloshinskii-Moriya interaction

Domain walls (DWs) in perpendicularly magnetized nanotracks (PMNTs) with interfacial Dzyaloshinskii-Moriya interaction (DMI) have become the primary objects of theoretical and experimental interest due to their technological suitability in spintronic nanodevices. Chiral DWs in PMNTs can be driven efficiently by the spin-orbit torque. However, the high-frequency dynamic behavior of the chiral DW has not been explored. In this work, using micromagnetic calculation, we have discovered a novel dynamic mode, the sway mode, of DWs under an out-of-plane high-frequency alternating current (AC) magnetic field in a PMNT with strong DMI. This dynamic phenomenon is strictly related with DMI-related boundary effect and can be understood in terms of the propagation of an amplitude-tuned spin wave in the DW plane. The spin wave exhibits some characteristic frequencies due to the space-confinement of DW. This work offers the possibility of a visual route for characterizing DMI.

physics.comp-ph↗

arXiv2018

Readable Racetrack Memory via Ferromagnetically Coupled Chiral Domain Walls

Current-induced motion of domain walls (CIMDW) with interfacial Dzyaloshinskii-Moriya interaction (DMI) in heavy metal (HM)/ferromagnetic (FM) metal multilayers have attracted attention owing to their potential application in novel magnetic memories. In recent years, the CIMDW at ultrahigh speed has been observed in a synthetic antiferromagnetic (SAF) multilayer. However, due to the zero net magnetization, the reading of information from the SAF multilayer is still challenging. In this work, we propose a readable racetrack memory consisting of a synthetic ferromagnetic multilayer composed of two FM layers with an interlayer FM coupling. One FM layer had an isotropic DMI, while the other had an anisotropic DMI. This difference of DMIs resulted in the opposite tilting directions of the DW planes in the two layers. This tilting was inhibited by a strong interlayer FM coupling, resulting in an increase in the DW velocity and the reduction of the minimum allowed spacing between two adjacent DWs. In addition, the FM coupling enhanced the stray field, and the stored information could be read conveniently using a conventional reading head. Therefore, our proposal paves a way for the fabrication of a racetrack memory with high reading speed, large storage density, and good readability.

physics.comp-ph↗

arXiv2017

Non Volatile MoS$_{2}$ Field Effect Transistors Directly Gated By Single Crystalline Epitaxial Ferroelectric

We demonstrate non-volatile, n-type, back-gated, MoS$_{2}$ transistors, placed directly on an epitaxial grown, single crystalline, PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$ (PZT) ferroelectric. The transistors show decent ON current (19 ${\mu}A/{\mu}$m), high on-off ratio (10$^{7}$), and a subthreshold swing of (SS ~ 92 mV/dec) with a 100 nm thick PZT layer as the back gate oxide. Importantly, the ferroelectric polarization can directly control the channel charge, showing a clear anti-clockwise hysteresis. We have selfconsistently confirmed the switching of the ferroelectric and corresponding change in channel current from a direct time-dependent measurement. Our results demonstrate that it is possible to obtain transistor operation directly on polar surfaces and therefore it should be possible to integrate 2D electronics with single crystalline functional oxides.

physics.app-ph↗

arXiv2015

Single Crystal Functional Oxides on Silicon

Single crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism etc. that have the potential for completely new electronic applications (1-2). Direct synthesis of such oxides on Si remains challenging due to the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces (3-16). Here we report integration of thin (down to 1 unit cell) single crystalline, complex oxide films onto Si substrates, by epitaxial transfer at room temperature. In a field effect transistor using a transferred Pb0.2Zr0.8TiO3 (PZT) layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single crystal functional oxides on-demand on silicon.

cond-mat.mtrl-sci↗

arXiv2014

Negative Capacitance in a Ferroelectric Capacitor

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time-in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this inductance-like behavior from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

cond-mat.mes-hall↗