arXiv subjects

Lorenzo Baldrati

Publications and source records attributed to Lorenzo Baldrati.

18 recordsLinked to original sources

arXiv2022

Identifiying the domain wall spin structure in current-induced switching of antiferromagnetic NiO/Pt

The understanding of antiferromagnetic domain walls, which are the interface between domains with different Néel order orientations, is a crucial aspect to enable the use of antiferromagnetic materials as active elements in future spintronic devices. In this work, we demonstrate that in antiferromagnetic NiO/Pt bilayers circular domain structures can be generated by switching driven by electrical current pulses. The generated domains are T-domains, separated from each other by a domain wall whose spins are pointing toward the average direction of the two T-domains rather than the common axis of the two planes. Interestingly, this direction is the same for the whole circular domain indicating the absence of strong Lifshitz invariants. The domain wall can be micromagnetically modeled by strain distributions in the NiO thin film induced by the MgO substrate, deviating from the bulk anisotropy. From our measurements we determine the domain wall width to have a full width at half maximum of $Δ= 98 \pm 10$ nm, demonstrating strong confinement.

cond-mat.mtrl-sci↗

arXiv2022

Strain-induced Shape Anisotropy in Antiferromagnetic Structures

We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different domain structures and we identify magnetoelastic interactions that are distinct for different domain configurations. We reproduce the experimental observations by modeling the magnetoelastic interactions, considering spontaneous strain induced by the domain configuration, as well as elastic strain due to the substrate and the shape of the patterns. This allows us to demonstrate and explain how the variation of the aspect ratio of rectangular elements can be used to control the antiferromagnetic ground state domain configuration. Shape-dependent strain does not only need to be considered in the design of antiferromagnetic devices, but can potentially be used to tailor their properties, providing an additional handle to control antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2022

Indirect optical manipulation of the antiferromagnetic order of insulating NiO by ultrafast interfacial energy transfer

We report the ultrafast, (sub)picosecond reduction of the antiferromagnetic order of the insulating NiO thin film in a Pt/NiO bilayer. This reduction of the antiferromagnetic order is not present in pure NiO thin films after a strong optical excitation. This ultrafast phenomenon is attributed to an ultrafast and highly efficient energy transfer from the optically excited electron system of the Pt layer into the NiO spin system. We propose that this energy transfer is mediated by a stochastic exchange scattering of hot Pt electrons at the Pt/NiO interface.

cond-mat.mtrl-sci↗

arXiv2021

Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films

We report the observation of the three-dimensional angular dependence of the spin Hall magnetoresistance (SMR) in a bilayer of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt, without any ferromagnetic element. The detected angular-dependent longitudinal and transverse magnetoresistances are measured by rotating the sample in magnetic fields up to 11 T, along three orthogonal planes (xy-, yz- and xz-rotation planes, where the z-axis is orthogonal to the sample plane). The total magnetoresistance has contributions arising from both the SMR and ordinary magnetoresistance. The onset of the SMR signal occurs between 1 and 3 T and no saturation is visible up to 11 T. The three-dimensional angular dependence of the SMR can be explained by a model considering the reversible field-induced redistribution of magnetostrictive antiferromagnetic S- and T-domains in the NiO(001), stemming from the competition between the Zeeman energy and the elastic clamping effect of the non-magnetic MgO substrate. From the observed SMR ratio, we estimate the spin mixing conductance at the NiO/Pt interface to be greater than $2\times10^{14}$ $Ω^{-1}$ $m^{-2}$. Our results demonstrate the possibility to electrically detect the Néel vector direction in stable NiO(001) thin films, for rotations in the xy- and xz- planes. Moreover, we show that a careful subtraction of the ordinary magnetoresistance contribution is crucial to correctly estimate the amplitude of the SMR.

cond-mat.mtrl-sci↗

arXiv2021

Identification of Néel vector orientation in antiferromagnetic domains switched by currents in NiO/Pt thin films

Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the Néel vector direction changes. We demonstrate electrical switching between different T-domains by current pulses, finding that the Néel vector orientation in these domains is along $[\pm5\ \pm5\ 19]$, different compared to the bulk $<11\bar{2}>$ directions. The final state of the Néel vector $\textbf{n}$ switching after current pulses $\textbf{j}$ along the $[1\ \pm1\ 0]$ directions is $\textbf{n}\parallel \textbf{j}$. By comparing the observed Néel vector orientation and the strain in the thin films, assuming that this variation arises solely from magnetoelastic effects, we quantify the order of magnitude of the magnetoelastic coupling coefficient as $b_{0}+2b_{1}=3*10^7 J\ m^{-3}$ . This information is key for the understanding of current-induced switching in antiferromagnets and for the design and use of such devices as active elements in spintronic devices.

cond-mat.mtrl-sci↗

arXiv2021

Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching

We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall magnetoresistance and confirmed by the magnetic field-induced spin-flop transition of the CoO layer. By applying current pulses and magnetic fields, we quantify the efficiency of the acting current-induced torques and estimate a current-field equivalence ratio of $4x10^{-11} T A^{-1} m^2$. The Néel vector final state ($n \perp j$) is in line with a thermomagnetoelastic switching mechanism for a negative magnetoelastic constant of the CoO.

cond-mat.mtrl-sci↗

arXiv2021

Propagation length of antiferromagnetic magnons governed by domain configurations

The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic spin-waves in thin films is anticipated to lead to new exotic phenomena such as spin-superfluidity, requiring an efficient propagation of spin-waves in thin films. However, the reported decay length in thin films has so far been limited to a few nanometers. In this work, we achieve efficient spin-wave propagation, over micrometer distances, in thin films of the insulating antiferromagnet hematite with large magnetic domains whilst evidencing much shorter attenuation lengths in multidomain thin films. Through transport and magnetic imaging, we conclude on the role of the magnetic domain structure and spin-wave scattering at domain walls to govern the transport. We manipulate the spin transport by tailoring the domain configuration through field cycle training. For the appropriate crystalline orientation, zero-field spin-transport is achieved across micrometers, as required for device integration.

cond-mat.mtrl-sci↗

arXiv2020

Identifying the origin of the non-monotonic thickness dependence of spin-orbit torques and interfacial Dzyaloshinskii-Moriya interaction in a ferrimagnetic insulator heterostructure

Electrical manipulation of magnetism via spin-orbit torques (SOTs) promises efficient spintronic devices. In systems comprising magnetic insulators and heavy metals, SOTs have started to be investigated only recently, especially in systems with interfacial Dzyaloshinskii-Moriya interaction (iDMI). Here, we quantitatively study the SOT efficiency and iDMI in a series of gadolinium gallium garnet (GGG) / thulium iron garnet (TmIG) / platinum (Pt) heterostructures with varying TmIG and Pt thicknesses. We find that the non-monotonic SOT efficiency as a function of the magnetic layer thickness is not consistent with the 1/thickness dependence expected from a simple interfacial SOT mechanism. Moreover, considering the insulating nature of TmIG, our results cannot be explained by the SOT mechanism established for metallic magnets where the transverse charge spin current can inject and dephase in the magnetic layers. Rather we can explain this non-monotonic behavior by a model based on the interfacial spin mixing conductance that is affected by the thickness-dependent exchange splitting energy by determining the phase difference of the reflected spin-up and spin-down electrons at the TmIG / Pt interface. By studying the Pt thickness dependence, we find that the effective DMI for GGG / TmIG / Pt does not depend on the Pt thickness, which indicates that the GGG / TmIG interface is the source of the iDMI in this system. Our work demonstrates that SOT and DMI can originate from two different interfaces, which enables independent optimization of DMI and SOT for advanced chiral spintronics with low damping magnetic insulators.

cond-mat.mtrl-sci↗

arXiv2020

An insulating doped antiferromagnet with low magnetic symmetry as a room temperature spin conduit

We report room temperature long-distance spin transport of magnons in antiferromagnetic thin film hematite doped with Zn. The additional dopants significantly alter the magnetic anisotropies, resulting in a complex equilibrium spin structure that is capable of efficiently transporting spin angular momentum at room temperature without the need for a well-defined, pure easy-axis or easy-plane anisotropy. We find intrinsic magnon spin-diffusion lengths of up to 1.5 μm, and magnetic domain governed decay lengths of 175 nm for the low frequency magnons, through electrical transport measurements demonstrating that the introduction of non-magnetic dopants does not strongly reduce the transport length scale showing that the magnetic damping of hematite is not significantly increased. We observe a complex field dependence of the non-local signal independent of the magnetic state visible in the local magnetoresistance and direct magnetic imaging of the antiferromagnetic domain structure. We explain our results in terms of a varying and applied-field-dependent ellipticity of the magnon modes reaching the detector electrode allowing us to tune the spin transport.

cond-mat.mes-hall↗

arXiv2020

Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance

TmFeO$_3$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 K and 94 K in single crystals. In this temperature region, the Néel vector continuously rotates from the crystallographic $c$-axis (below 82 K) to the $a$-axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a magnetic field, making it apt for applications working at THz frequencies. For device applications, thin films of TFO are required as well as an electrical technique for reading out the magnetic state. Here we demonstrate that orthorhombic TFO thin films can be grown by pulsed laser deposition and the detection of the SRT in TFO thin films can be accessed by making use of the all electrical spin Hall magnetoresistance (SMR), in good agreement for the temperature range where the SRT occurs. Our results demonstrate that one can electrically detect the SRT in insulators.

cond-mat.mtrl-sci↗

arXiv2020

Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films

Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite (α-Fe2O3) and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic based structures. To understand the observed complex SMR field dependence, we analyse the effect of misalignments of the magnetic axis that arise during growth of thin films, by electrical measurements and direct magnetic imaging, and find that a small deviation can result in significant signatures in the SMR response. This highlights the care that must be taken when interpreting SMR measurements on AFM spin textures.

cond-mat.mtrl-sci↗

arXiv2020

Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films

We demonstrate stable and reversible current induced switching of large-area ($> 100\;μm^2$) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope. By correlating the magnetic images of the antiferromagnetic domain changes and magneto-transport signal response in these current-induced switching experiments, we disentangle magnetic and non-magnetic contributions to the transport signal. Our table-top approach establishes a robust procedure to subtract the non-magnetic contributions in the transport signal and extract the spin-Hall magnetoresistance response associated with the switching of the antiferromagnetic domains enabling one to deduce details of the antiferromagnetic switching from simple transport measurements.

cond-mat.mes-hall↗

arXiv2019

Impact of electromagnetic fields and heat on spin transport signals in Y$_{3}$Fe$_{5}$O$_{12}$

Exploring new strategies to perform magnon logic is a key requirement for the further development of magnon-based spintronics. In this work, we realize a three-terminal magnon transport device to study the possibility of manipulating magnonic spin information transfer in a magnetic insulator via localized magnetic fields and heat generation. The device comprises two parallel Pt wires as well as a Cu center wire that are deposited on the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$. While the Pt wires act as spin current injector and detector, the Cu wire is used to create local magnetostatic fields and additional heat, which impact both the magnetic configuration and the magnons within the Y$_{3}$Fe$_{5}$O$_{12}$ below. We show that these factors can create a non-local signal that shows similar features as compared to an electrically induced magnon flow. Furthermore, a modulation of the spin transport signal between the Pt wires is observed, which can be partly explained by thermally excited spin currents of different polarization. Our results indicate a potential way towards the manipulation of non-local magnon signals, which could be useful for magnon logic.

cond-mat.mtrl-sci↗

arXiv2019

Mechanism of Néel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging

We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.

cond-mat.mtrl-sci↗

arXiv2019

Spin-dependent (inverse) spin Hall effect in Co$_{60}$Fe$_{20}$B$_{20}$

In ferromagnetic metals, the interconversion of spin and charge currents via the spin Hall effect and its inverse can depend on the angle between the ferromagnets magnetization and the spin current polarization direction. Here, such a spin-dependent (inverse) spin Hall effect is found in the ferromagnetic alloy Co$_{60}$Fe$_{20}$B$_{20}$. In a nonlocal magnon transport experiment, Co$_{60}$Fe$_{20}$B$_{20}$ is used to both excite and detect magnonic spin currents flowing in the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$. We find that the signal amplitude is significantly modulated by tuning the direction of the Co$_{60}$Fe$_{20}$B$_{20}$ magnetization. We design a sample structure that completely prevents direct magnonic coupling between the ferromagnets. Thus, we can identify unambiguously an intrinsic electronic origin of the observed effect.

cond-mat.mtrl-sci↗

arXiv2019

Anisotropies and magnetic phase transitions in insulating antiferromagnets determined by a Spin-Hall magnetoresistance probe

We demonstrate that we can determine the antiferromagnetic anisotropies and the bulk Dzyaloshinskii-Moriya fields of the insulating iron oxide hematite, α-Fe2O3, using a surface sensitive spin-Hall magnetoresistance (SMR) technique. We develop an analytical model that in combination with SMR measurements, allow for the identification of the material parameters of this prototypical antiferromagnet over a wide range of temperatures and magnetic field values. Using devices with different orientations, we demonstrate that the SMR response strongly depends on the direction of the charge current with respect to the magneto-crystalline anisotropies axis. We show that we can extract the anisotropies over a wide temperature range including across the Morin phase transition. We observe that the electrical response is dominated by the orientation of the antiferromagnetic Néel order parameter, rather than by the emergent weak magnetic moment. Our results highlight that the surface sensitivity of the SMR allows accessing the magnetic anisotropies of antiferromagnetic crystals and in particular thin films where other methods to determine anisotropies such as bulk-sensitive magnetic susceptibility measurements do not provide sufficient sensitivity.

cond-mat.mes-hall↗

arXiv2018

Spin transport in multilayer systems with fully epitaxial NiO thin films

We report on the generation and transport of thermal spin currents in fully epitaxial γ-Fe$_2$O$_3$/NiO(001)/Pt and Fe$_3$O$_4$/NiO(001)/Pt trilayers. A thermal gradient, perpendicular to the plane of the sample, generates a magnonic spin current in the ferrimagnetic maghemite (γ-Fe$_2$O$_3$) and magnetite (Fe$_3$O$_4$) thin films by means of the spin Seebeck effect. The spin current propagates across the epitaxial, antiferromagnetic insulating NiO layer, before being detected in the Pt layer by the inverse spin Hall effect. The transport of the spin signal is studied as a function of the NiO thickness, temperature and ferrimagnetic material where the spin current is generated. In epitaxial NiO grown on maghemite, the spin Seebeck signal decays exponentially as a function of the NiO thickness, with a spin-diffusion length for thermally-generated magnons of λ$_{MSDL}$ = $1.6 \pm 0.2$ nm, largely independent on temperature. We see no enhancement of the spin current signal as previously reported for certain temperatures and thicknesses of the NiO. In epitaxial NiO grown on magnetite, the temperature-averaged spin diffusion length is λ$_{MSDL}$ = $3.8 \pm 0.3$ nm, and we observe an enhancement of the spin signal when the NiO thickness is 0.8 nm, demonstrating that the growth conditions dramatically affect the spin transport properties of the NiO even for full epitaxial growth. In contrast to theoretical predictions for coherent spin transport, we do not see vastly different spin diffusion lengths between epitaxial and polycrystalline NiO layers.

cond-mat.mtrl-sci↗

arXiv2016

Strain-controlled responsiveness of slave half-doped manganite La0.5Sr0.5MnO3 layers inserted in BaTiO3 ferroelectric tunnel junctions

Insertion of layers displaying field-induced metal-to-insulator (M/I) transition in ferroelectric tunnel junctions (FTJs) has received attention as a potentially useful way to enlarge junction tunnel electroresistance (TER). Half-doped manganites being at the verge of metal-insulator character are thus good candidates to be slave layers in FTJs. However, the phase diagram of these oxides is extremely sensitive to strain and thus can be radically different when integrated in epitaxial FTJs. Here we report a systematic study of large-area (A = 4 to 100 um2) Pt/La0.5Sr0.5MnO3/BaTiO3/La0.7Sr0.3MnO3 (Pt/HD/BTO/LSMO) FTJs, having different thicknesses of the ferroelectric (2-3nm) and HD layers (1-2nm), grown on substrates imposing either tensile (SrTiO3) or compressive (LaAlO3) strains. Room-temperature electric characterization of the FTJs shows polarization-controlled ON/ OFF states. Clear evidences of field-induced M/I transition (difference between junction resistance in OFF and ON state is increased of more than one order of magnitude) are observed in junctions prepared on SrTiO3 but the HD layer is generally metallic on LaAlO3. Moreover, the M/I transition is only confined in an interfacial layer of the slave film thus entailing an overall reduction of TER. The orderly results reported here give some hints towards selection of HD materials and substrates for optimal FTJ responsiveness.

cond-mat.mtrl-sci↗