arXiv subjects

Lucia Sorba

Publications and source records attributed to Lucia Sorba.

At least 55 records · Page 3Linked to original sources

arXiv2020

Probing proximity induced superconductivity in InAs nanowire using built-in barriers

Bound states in superconductor-nanowire hybrid devices play a central role, carrying informationon the ground states properties (Shiba or Andreev states) or on the topological properties of thesystem (Majorana states). The spectroscopy of such bound states relies on the formation of well-defined tunnel barriers, usually defined by gate electrodes, which results in smooth tunnel barriers.Here we used thin InP segments embedded into InAs nanowire during the growth process to forma sharp built-in tunnel barrier. Gate dependence and thermal activation measurements have beenused to confirm the presence and estimate the height of this barrier. By coupling these wires tosuperconducting electrodes we have investigated the gate voltage dependence of the induced gap inthe nanowire segment, which we could understand using a simple model based on Andreev boundstates. Our results show that these built-in barriers are promising as future spectroscopic tools

cond-mat.mes-hall↗

arXiv2019

Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots

With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here we investigate single-electron tunneling in hard-wall InAs/InP nanowires in the presence of an off-resonant microwave drive. Our heterostructured nanowires include InAs quantum dots (QDs) and exhibit different tunnel-current regimes. In particular, for source-drain bias up to few mV Coulomb diamonds spread with increasing contrast as a function of microwave power and present multiple current polarity reversals. This behavior can be modelled in terms of voltage fluctuations induced by the microwave field and presents features that depend on the interplay of the discrete energy levels that contribute to the tunneling process.

cond-mat.mes-hall↗

arXiv2019

A Double Quantum Dot Spin Valve

A most fundamental and longstanding goal in spintronics is to electrically tune highly efficient spin injectors and detectors, preferably compatible with nanoscale electronics. Here, we demonstrate all these points using semiconductor quantum dots (QDs), individually spin-polarized by ferromagnetic split-gates (FSGs). As a proof of principle, we fabricated a double QD spin valve consisting of two weakly coupled semiconducting QDs in an InAs nanowire (NW), each with independent FSGs that can be magnetized in parallel or anti-parallel. In tunneling magnetoresistance (TMR) experiments at zero external magnetic field, we find a strongly reduced spin valve conductance for the two anti-parallel configurations, with a single QD polarization of $\sim 27\%$. The TMR can be significantly improved by a small external field and optimized gate voltages, which results in a continuously electrically tunable TMR between $+80\%$ and $-90\%$. A simple model quantitatively reproduces all our findings, suggesting a gate tunable QD polarization of $\pm 80\%$. Such versatile spin-polarized QDs are suitable for various applications, for example in spin projection and correlation experiments in a large variety of nanoelectronics experiments.

cond-mat.mes-hall↗

arXiv2019

Anisotropies of the g-factor tensor and diamagnetic coefficient in crystal-phase quantum dots in InP nanowires

Crystal-phase low-dimensional structures offer great potential for the implementation of photonic devices of interest for quantum information processing. In this context, unveiling the fundamental parameters of the crystal phase structure is of much relevance for several applications. Here, we report on the anisotropy of the g-factor tensor and diamagnetic coefficient in wurtzite/zincblende (WZ/ZB) crystal-phase quantum dots (QDs) realized in single InP nanowires. The WZ and ZB alternating axial sections in the NWs are identified by high-angle annular dark-field scanning transmission electron microscopy. The electron (hole) g-factor tensor and the exciton diamagnetic coefficients in WZ/ZB crystal-phase QDs are determined through micro-photoluminescence measurements at low temperature (4.2 K) with different magnetic field configurations, and rationalized by invoking the spin-correlated orbital current model. Our work provides key parameters for band gap engineering and spin states control in crystal-phase low-dimensional structures in nanowires.

cond-mat.mes-hall↗

arXiv2019

Investigation of InAs based devices for topological applications

Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high quality, large g-factor and spin-orbit component. Here, we report on InAs-based devices both in one-dimensional and two-dimensional configurations. In the former, low-temperature measurements on a suspended nanowire are presented, inspecting the intrinsic spin-orbit contribution of the system. In the latter, Josephson Junctions between two Nb contacts comprising an InAs quantum well are investigated. Supercurrent flow is reported, with Nb critical temperature up to T_c~8K. Multiple Andreev reflection signals are observed in the dissipative regime. In both systems, we show that the presence of external gates represents a useful knob, allowing for wide tunability and control of device properties, such as spin-orbit coherence length or supercurrent amplitude.

cond-mat.mes-hall↗

arXiv2019

Proximitized Josephson junctions in highly-doped InAs nanowires robust to optical illumination

We have studied the effects of optical-frequency light on proximitized InAs/Al Josephson junctions based on highly n-doped InAs nanowires at varying incident photon flux and at three different photon wavelengths. The experimentally obtained IV curves were modeled using a shunted junction model which takes scattering at the contact interfaces into account. The Josephson junctions were found to be surprisingly robust, interacting with the incident radiation only through heating, whereas above the critical current our devices showed non-thermal effects resulting from photon exposure. Our work provides important guidelines for the co-integration of Josephson junctions alongside quantum photonic circuits and lays the foundation for future work on nanowire-based hybrid photon detectors.

cond-mat.mes-hall↗

arXiv2019

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to extract valuable quantitative information of the QD. The QD shows very regular Coulomb blockade (CB) resonances over a large gate voltage range. By analyzing the resonance line shapes, we map the evolution of the tunnel couplings from the few to the many electron regime, with electrically tunable tunnel couplings from <1 $μ$eV to >600 $μ$eV, and a transition from the temperature to the lifetime broadened regime. The InP segments form tunnel barriers with almost fully symmetric tunnel couplings and a barrier height of ~350 meV. All of these findings can be understood in great detail based on the deterministic material composition and geometry. Our results demonstrate that integrated InAs/InP QDs provide a promising platform for electron tunneling spectroscopy in InAs nanowires, which can readily be contacted by a variety of superconducting materials to investigate subgap states in proximitized NW regions, or be used to characterize thermoelectric nanoscale devices in the quantum regime.

cond-mat.mes-hall↗

arXiv2019

Thermoelectric conversion at 30K in InAs/InP nanowire quantum dots

We demonstrate high-temperature thermoelectric conversion in InAs/InP nanowire quantum dots by taking advantage of their strong electronic confinement. The electrical conductance G and the thermopower S are obtained from charge transport measurements and accurately reproduced with a theoretical model accounting for the multi-level structure of the quantum dot. Notably, our analysis does not rely on the estimate of co-tunnelling contributions since electronic thermal transport is dominated by multi-level heat transport. By taking into account two spin-degenerate energy levels we are able to evaluate the electronic thermal conductance K and investigate the evolution of the electronic figure of merit ZT as a function of the quantum dot configuration and demonstrate ZT ~ 35 at 30 K, corresponding to an electronic effciency at maximum power close to the Curzon- Ahlborn limit.

cond-mat.mes-hall↗

arXiv2019

Near-field terahertz probes with room-temperature nanodetectors for subwavelength resolution imaging

Near-field imaging with terahertz (THz) waves is emerging as a powerful technique for fundamental research in photonics and across physical and life sciences. Spatial resolution beyond the diffraction limit can be achieved by collecting THz waves from an object through a small aperture placed in the near-field. However, light transmission through a sub-wavelength size aperture is fundamentally limited by the wave nature of light. Here, we conceive a novel architecture that exploits inherently strong evanescent THz field arising within the aperture to mitigate the problem of vanishing transmission. The sub-wavelength aperture is originally coupled to asymmetric electrodes, which activate the thermo-electric THz detection mechanism in a transistor channel made of flakes of black-phosphorus or InAs nanowires. The proposed novel THz near-field probes enable room-temperature sub-wavelength resolution coherent imaging with a 3.4 THz quantum cascade laser, paving the way to compact and versatile THz imaging systems and promising to bridge the gap in spatial resolution from the nanoscale to the diffraction limit.

physics.app-ph↗

arXiv2018

Vectorial control of the spin-orbit interaction in suspended InAs nanowires

Semiconductor nanowires featuring strong spin-orbit interactions (SOI), represent a promising platform for a broad range of novel technologies, such as spintronic applications or topological quantum computation. However, experimental studies into the nature and the orientation of the SOI vector in these wires remain limited despite being of upmost importance. Typical devices feature the nanowires placed on top of a substrate which modifies the SOI vector and spoils the intrinsic symmetries of the system. In this work, we report experimental results on suspended InAs nanowires, in which the wire symmetries are fully preserved and clearly visible in transport measurements. Using a vectorial magnet, the non-trivial evolution of weak anti-localization (WAL) is tracked through all 3D space, and both the spin-orbit length $l_{SO}$ and coherence length $l_φ$ are determined as a function of the magnetic field magnitude and direction. Studying the angular maps of the WAL signal, we demonstrate that the average SOI within the nanowire is isotropic and that our findings are consistent with a semiclassical quasi-1D model of WAL adapted to include the geometrical constraints of the nanostructure. Moreover, by acting on properly designed side gates, we apply an external electric field introducing an additional vectorial Rashba spin-orbit component whose strength can be controlled by external means. These results give important hints on the intrinsic nature of suspended nanowire and can be interesting for in the field of spintronics as well as for the manipulation of Majorana bound states in devices based on hybrid semiconductors.

cond-mat.mes-hall↗

arXiv2018

Ionic liquid gating of InAs nanowire-based field effect transistors

We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating with the SiO2 /Si++ substrate. Thanks to this wide modulation we show the controlled evolution from semiconductor to metallic-like behavior in the nanowire. This work provides the first systematic study of ionic-liquid gating in electronic devices based on individual III-V semiconductor nanowires: we argue this architecture opens the way to a wide range of fundamental and applied studies from the phase-transitions to bioelectronics.

cond-mat.mes-hall↗

arXiv2018

Quantum Hall Effect in a Josephson Junction

Hybrid superconductor/semiconductor devices constitute a powerful platform where intriguing topological properties can be investigated. Here we present fabrication methods and analysis of Josephson junctions formed by a high-mobility InAs quantum-well bridging two Nb superconducting contacts. We demonstrate supercurrent flow with transport measurements, critical temperature of 8.1 K, and critical fields of the order of 3 T. Modulation of supercurrent amplitude can be achieved by acting on two side gates lithographed close to the two-dimensional electron gas. Low-temperature measurements reveal also well-developed quantum Hall plateaus, showing clean quantization of Hall conductance. Here the side gates can be used to manipulate channel width and electron carrier density in the device. These findings demonstrate the potential of these hybrid devices to investigate the coexistence of superconductivity and Quantum Hall effect and constitute the first step in the development of new device architectures hosting topological states of matter.

cond-mat.mes-hall↗

arXiv2018

Gate-tunable spatial modulation of localized plasmon resonances

Nanoplasmonics exploits the coupling between light and collective electron density oscillations (plasmons) to bypass the stringent limits imposed by diffraction. This coupling enables confinement of light to sub-wavelength volumes and is usually exploited in nanostructured metals. Substantial efforts are being made at the current frontier of the field to employ electron systems in semiconducting and semimetallic materials since these add the exciting possibility of realizing electrically tunable and/or active nanoplasmonic devices. Here we demonstrate that a suitable design of the doping profile in a semiconductor nanowire (NW) can be used to tailor the plasmonic response and induce localization effects akin to those observed in metal nanoparticles. Moreover, by field-effect carrier modulation, we demonstrate that these localized plasmon resonances can be spatially displaced along the nanostructure body, thereby paving the way for the implementation of spatially tunable plasmonic circuits.

cond-mat.mes-hall↗

arXiv2016

InAs nanowire superconducting tunnel junctions: spectroscopy, thermometry and nanorefrigeration

We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current suppression by over $4$ orders of magnitude for a junction bias well below the Al gap $Δ_0 \approx 200\,μ{\rm eV}$. The experimental data are in close agreement with the BCS theoretical expectations of a superconducting tunnel junction. The studied devices combine small-scale tunnel contacts working as thermometers as well as larger electrodes that provide a proof-of-principle active {\em cooling} of the electron distribution in the nanowire. A peak refrigeration of about $δT = 10\,{\rm mK}$ is achieved at a bath temperature $T_{bath}\approx250-350\,{\rm mK}$ in our prototype devices. This method opens important perspectives for the investigation of thermoelectric effects in semiconductor nanostructures and for nanoscale refrigeration.

cond-mat.mes-hall↗

arXiv2016

MBE growth of self-assisted InAs nanowires on graphene

Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ~50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs NWs with the graphene substrate was determined. A 30° orientation configuration of some of the InAs NWs is shown to be related to the surface corrugation of the graphene substrate. InAs NW-based devices for transport measurements were fabricated, and the conductance measurements showed a semi-ballistic behavior. In Josephson junction measurements in the non-linear regime, Multiple Andreev Reflections were observed, and an inelastic scattering length of about 900 nm was derived.

cond-mat.mtrl-sci↗

arXiv2016

Mid-Infrared intersubband polaritons in dispersive metal-insulator-metal resonators

We demonstrate room-temperature strong-coupling between a mid-infrared ($λ$=9.9 $μ$m) intersubband transition and the fundamental cavity mode of a metal-insulator-metal resonator. Patterning of the resonator surface enables surface-coupling of the radiation and introduces an energy dispersion which can be probed with angle-resolved reflectivity. In particular, the polaritonic dispersion presents an accessible energy minimum at k=0 where - potentially - polaritons can accumulate. We also show that it is possible to maximize the coupling of photons into the polaritonic states and - simultaneously - to engineer the position of the minimum Rabi splitting at a desired value of the in-plane wavevector. This can be precisely accomplished via a simple post-processing technique. The results are confirmed using the temporal coupled mode theory formalism and their significance in the context of the concept of strong critical coupling is highlighted.

cond-mat.mes-hall↗

arXiv2016

Photonic bands and defect modes in metallo-dielectric photonic crystal slabs

Photonic components based on structured metallic elements show great potential for device applications where field enhancement and confinement of the radiation on a subwavelength scale is required. In this paper we report a detailed study of a prototypical metallo-dielectric photonic structure, where features well known in the world of dielectric photonic crystals, like band gaps and defect modes, are exported to the metallic counterpart, with interesting applications to infrared science and technology, as for instance in quantum well infrared photodetectors, narrow-band spectral filters, and tailorable thermal emitters.

physics.optics↗

arXiv2016

Perfect energy-feeding into strongly coupled systems and interferometric control of polariton absorption

The ability to feed energy into a system, or - equivalently - to drive that system with an external input is a fundamental aspect of light-matter interaction. The key concept in many photonic applications is the "critical coupling" condition: at criticality, all the energy fed to the system via an input channel is dissipated within the system itself. Although this idea was crucial to enhance the efficiency of many devices, it was never considered in the context of systems operating in a non-perturbative regime. In this so-called strong coupling regime, the matter and light degrees of freedom are in fact mixed into dressed states, leading to new eigenstates called polaritons. Here we demonstrate that the strong coupling regime and the critical coupling condition can indeed coexist; in this situation, which we term strong critical coupling, all the incoming energy is converted into polaritons. A semiclassical theory - equivalently applicable to acoustics or mechanics - reveals that the strong critical coupling corresponds to a special curve in the phase diagram of the coupled light-matter oscillators. In the more general case of a system radiating via two scattering ports, the phenomenology displayed is that of coherent perfect absorption (CPA), which is then naturally understood and described in the framework of critical coupling. Most importantly, we experimentally verify polaritonic CPA in a semiconductor-based intersubband-polariton photonic-crystal membrane resonator. This result opens new avenues in the exploration of polariton physics, making it possible to control the pumping efficiency of a system almost independently of its Rabi energy, i.e., of the energy exchange rate between the electromagnetic field and the material transition.

quant-ph↗