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arXiv · 1810.09127

Ionic liquid gating of InAs nanowire-based field effect transistors

Johanna Lieb·Valeria Demontis·Daniele Ercolani·Valentina Zannier·Lucia Sorba·Shimpei Ono·Fabio Beltram·Benjamin Sacépé·Francesco Rossella
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Abstract

We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating with the SiO2 /Si++ substrate. Thanks to this wide modulation we show the controlled evolution from semiconductor to metallic-like behavior in the nanowire. This work provides the first systematic study of ionic-liquid gating in electronic devices based on individual III-V semiconductor nanowires: we argue this architecture opens the way to a wide range of fundamental and applied studies from the phase-transitions to bioelectronics.

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Johanna Lieb, Valeria Demontis, Daniele Ercolani, Valentina Zannier, Lucia Sorba, Shimpei Ono, Fabio Beltram, Benjamin Sacépé, Francesco Rossella. 2018-10-22. Ionic liquid gating of InAs nanowire-based field effect transistors. https://arxiv.org/abs/1810.09127

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