arXiv subjects

Luis Balicas

Publications and source records attributed to Luis Balicas.

At least 55 records · Page 3Linked to original sources

arXiv2021

Evidence of a coupled electron-phonon liquid in NbGe$_2$

Whereas electron-phonon scattering typically relaxes the electron's momentum in metals, a perpetual exchange of momentum between phonons and electrons conserves total momentum and can lead to a coupled electron-phonon liquid with unique transport properties. This theoretical idea was proposed decades ago and has been revisited recently, but the experimental signatures of an electron-phonon liquid have been rarely reported. We present evidence of such a behavior in a transition metal ditetrelide, NbGe$_2$, from three different experiments. First, quantum oscillations reveal an enhanced quasiparticle mass, which is unexpected in NbGe$_2$ due to weak electron-electron correlations, hence pointing at electron-phonon interactions. Second, resistivity measurements exhibit a discrepancy between the experimental data and calculated curves within a standard Fermi liquid theory. Third, Raman scattering shows anomalous temperature dependence of the phonon linewidths which fits an empirical model based on phonon-electron coupling. We discuss structural factors, such as chiral symmetry, short metallic bonds, and a low-symmetry coordination environment as potential sources of coupled electron-phonon liquids.

cond-mat.mtrl-sci↗

arXiv2021

High magnetic field induced crossover from the Kondo to Fermi liquid behavior in 1$T$-VTe$_{2}$ single crystals

The magnetic and magnetotransport properties of metallic 1$T$-VTe$_{2}$ single crystals were investigated at temperatures from 1.3 to 300 K and in magnetic fields up to 35 T. Upon applying a high magnetic field, it is found that the electrical resistivity displays a crossover from the logarithmic divergence of the single-impurity Kondo effect to the Fermi liquid behavior at low temperatures. The Brillouin scale of the negative magnetoresistivity above the Kondo temperature $T_{\rm{K}}$ = 12 K indicates that the Kondo features originate from intercalated V ions, with $S$ = 1/2. Both magnetic susceptibility and Hall effect show an anomaly around $T_{\rm{K}}$. By using the modified Hamann expression we successfully describe the temperature-dependent resistivity under various magnetic fields, which shows the characteristic peak below $T_{\rm{K}}$ due to the splitting of the Kondo resonance.

cond-mat.str-el↗

arXiv2021

Complex Dirac-like Electronic Structure in Atomic Site Ordered Rh3In3.4Ge3.6

We report the synthesis via an indium flux method of a novel single-crystalline compound Rh3In3.4Ge3.6 that belongs to the cubic Ir3Ge7 structure type. In Rh3In3.4Ge3.6, the In and Ge atoms choose to preferentially occupy, respectively, the 12d and 16f sites of the Im-3m space group, thus creating a colored version of the Ir3Ge7 structure. Like the other compounds of the Ir3Ge7 family, Rh3In3.4Ge3.6 shows potential as a thermoelectric displaying a relatively large power factor, PF ~ 2 mW/cmK2, at a temperature T ~ 225 K albeit showing a modest figure of merit, ZT = 8 x 10-4, due to the lack of a finite band gap. These figures might improve through a use of chemical substitution strategies to achieve band gap opening. Remarkably, electronic band structure calculations reveal that this compound displays a complex Dirac-like electronic structure relatively close to the Fermi level. The electronic structure is composed of several Dirac type-I and type-II nodes, and even Dirac type-III nodes that result from the touching between a flat band and a linearly dispersing band. This rich Dirac-like electronic dispersion offers the possibility to observe Dirac type-III nodes and study their role in the physical properties of Rh3In3.4Ge3.6 and related Ir3Ge7-type materials.

cond-mat.mtrl-sci↗

arXiv2020

High-temperature superconductivity on the verge of a structural instability in lanthanum superhydride

A possibility of high, room-temperature superconductivity was predicted for metallic hydrogen in the 1960s. However, metallization and superconductivity of hydrogen are yet to be unambiguously demonstrated in the laboratory and may require pressures as high as 5 million atmospheres. Rare earth based "superhydrides" such as LaH10 can be considered a close approximation of metallic hydrogen even though they form at moderately lower pressures. In superhydrides the predominance of H-H metallic bonds and high superconducting transition temperatures bear the hallmarks of metallic hydrogen. Still, experimental studies revealing the key factors controlling their superconductivity are scarce. Here, we report on the pressure and magnetic field response of the superconducting order observed in LaH10. For LaH10 we find a correlation between superconductivity and a structural instability, strongly affecting the lattice vibrations responsible for the superconductivity.

cond-mat.supr-con↗

arXiv2020

Bulk Fermi surfaces of the Dirac type-II semimetallic candidate NiTe2

Here, we present a study on the Fermi-surface of the Dirac type-II semi-metallic candidate NiTe$_2$ via the temperature and angular dependence of the de Haas-van Alphen (dHvA) effect measured in single-crystals grown through Te flux. In contrast to its isostructural compounds like PtSe$_2$, band structure calculations predict NiTe$_2$ to display a tilted Dirac node very close to its Fermi level that is located along the $Γ$ to A high symmetry direction within its first Brillouin zone (FBZ). The angular dependence of the dHvA frequencies is found to be in agreement with the first-principle calculations when the electronic bands are slightly shifted with respect to the Fermi level ($\varepsilon_F$), and therefore provide support for the existence of a Dirac type-II node in NiTe$_2$. Nevertheless, we observed mild disagreements between experimental observations and density Functional theory calculations as, for example, nearly isotropic and light experimental effective masses. This indicates that the dispersion of the bands is not well captured by DFT. Despite the coexistence of Dirac-like fermions with topologically trivial carriers, samples of the highest quality display an anomalous and large, either linear or sub-linear magnetoresistivity. This suggests that Lorentz invariance breaking Dirac-like quasiparticles dominate the carrier transport in this compound.

cond-mat.mtrl-sci↗

arXiv2020

Enhanced Superconductivity in Monolayer $T_d$-MoTe$_2$ with Tilted Ising Spin Texture

Crystalline two-dimensional (2D) superconductors with low carrier density are an exciting new class of materials in which superconductivity coexists with strong interactions, the effects of complex topology are not obscured by disorder, and electronic properties can be strongly tuned by electrostatic gating. Very recently, two such materials, 'magic-angle' twisted bilayer graphene and monolayer $T_d$-WTe$_2$, have been reported to show superconductivity at temperatures near 1 K. Here we report superconductivity in semimetallic monolayer $T_d$-MoTe$_2$. The critical temperature $T_\textrm{c}$ reaches 8 K, a sixty-fold enhancement as compared to the bulk. This anomalous increase in $T_\textrm{c}$ is only observed in monolayers, and may be indicative of electronically mediated pairing. Reflecting the low carrier density, the critical temperature, magnetic field, and current density are all tunable by an applied gate voltage, revealing a superconducting dome that extends across both hole and electron pockets. The temperature dependence of the in-plane upper critical field is distinct from that of $2H$ transition metal dichalcogenides (TMDs), consistent with a tilted spin texture as predicted by \textit{ab initio} theory.

cond-mat.supr-con↗

arXiv2020

Multiple Dirac Nodes and Symmetry Protected Dirac Nodal Line in Orthorhombic $α$-RhSi

Owing to their chiral cubic structure, exotic multifold topological excitations have been predicted and recently observed in transition metal silicides like $β$-RhSi. Herein, we report that the topological character of RhSi is also observed in its orthorhombic $α$-phase which displays multiple types of Dirac nodes very close to the Fermi level ($\varepsilon_F$) with the near absence of topologically trivial carriers. We discuss the symmetry analysis, band connectivity along high-symmetry lines using group representations, the band structure, and the nature of the Dirac points and nodal lines occurring near $\varepsilon_F$. The de Haas-van Alphen effect (dHvA) indicates a Fermi surface in agreement with the calculations. We find an elliptically-shaped nodal line very close to $\varepsilon_F$ around and near the $S$-point on the $k_y-k_z$ plane that results from the intersection of two upside-down Dirac cones. The two Dirac points of the participating Kramers degenerate bands are only 5 meV apart, hence an accessible magnetic field might induce a crossing between the spin-up partner of the upper-Dirac cone and the spin-down partner of the lower Dirac cone, possibly explaining the anomalies observed in the magnetic torque.

cond-mat.str-el↗

arXiv2019

Bulk Fermi surface of the type-II Weyl semimetal candidate NbIrTe$_{4}$

Recently, a new group of layered transition-metal tetra-chalcogenides were proposed, via first principles calculations, to correspond to a new family of Weyl type-II semimetals with promising topological properties in the bulk as well as in the monolayer limit. In this article, we present measurements of the Shubnikov-de Haas (SdH) and de Haas-van Alphen effects under high magnetic fields for the type-II Weyl semimetallic candidate NbIrTe$_{4}$. We find that the angular dependence of the observed Fermi surface extremal cross-sectional areas agree well with our DFT calculations supporting the existence of Weyl type-II points in this material. Although we observe a large and non-saturating magnetoresistivity in NbIrTe$_{4}$ under fields all the way up to 35 T, Hall-effect measurements indicate that NbIrTe$_{4}$ is not a compensated semimetal. The transverse magnetoresistivity displays a four-fold angular dependence akin to the so-called butterfly magnetoresistivity observed in nodal line semimetals. However, we conclude that its field and this unconventional angular-dependence are governed by the topography of the Fermi-surface and the resulting anisotropy in effective masses and in carrier mobilities.

cond-mat.mtrl-sci↗

arXiv2019

Enhanced Optoelectronic Response in Bilayer Lateral Heterostructures of Transition Metal Dichalcogenides

Two-dimensional lateral heterojunctions are basic components for low-power and flexible optoelectronics. In contrast to monolayers, devices based on few-layer lateral heterostructures could offer superior performance due to their lower susceptibility to environmental conditions. Here, we report the controlled synthesis of multi-junction bilayer lateral heterostructures based on MoS2-WS2 and MoSe2-WSe2, where the hetero-junctions are created via sequential lateral edge-epitaxy that happens simultaneously in both the first and the second layer. With respect to their monolayer counterparts, bilayer lateral heterostructures yield nearly one order of magnitude higher rectification currents. They also display a clear photovoltaic response, with short circuit currents ~103 times larger than those extracted from the monolayers, in addition to room-temperature electroluminescence. The superior performance of bilayer heterostructures significantly expands the functionalities of 2D crystals.

cond-mat.mtrl-sci↗

arXiv2019

Superconducting Phase-Diagram of H3S under High Magnetic Fields

We report the temperature dependence of the upper critical fields $μ_0H_{c2}(T)$ of the high temperature superconductor H$_3$S under applied pressures of 155 and 160 GPa through the electrical resistance transition observed under DC and pulsed magnetic fields up to 65 T, a record high combination of fields and pressures. We find that $H_{c2}(T)$ generally follows the Werthamer, Helfand and Hohenberg (WHH) formalism at low fields, albeit with noticeable deviations upon approaching our experimental limit of $μ_0H = 65$ T. In fact, $H_{c2}(T)$ displays a remarkably linear dependence on temperature over an extended temperature range also found in multigap or in strongly-coupled superconductors. The best fit of $H_{c2}(T)$ to the WHH formula yields a negligible value for the Maki parameter $α$ and for spin-orbit scattering constant $λ_{\text{SO}}$. However, its behavior is relatively well-described by a model based on strong coupling superconductivity with a coupling constant $λ\sim 2$. Therefore, we conclude that H$_3$S behaves as a strong-coupled orbital-limited superconductor over the entire range of temperatures and fields used for our measurements.

cond-mat.str-el↗

arXiv2018

Magnetic anisotropy of the alkali iridate Na$_{2}$IrO$_{3}$ at high magnetic fields: evidence for strong ferromagnetic Kitaev correlations

The magnetic field response of the Mott-insulating honeycomb iridate Na$_{2}$IrO$_{3}$ is investigated using torque magnetometry measurements in magnetic fields up to 60 tesla. A peak-dip structure is observed in the torque response at magnetic fields corresponding to an energy scale close to the zigzag ordering ($\approx 15~K$) temperature. Using exact diagonalization calculations, we show that such a distinctive signature in the torque response constrains the effective spin models for these classes of Kitaev materials to ones with dominant ferromagnetic Kitaev interactions, while alternative models with dominant antiferromagnetic Kitaev interactions are excluded. We further show that at high magnetic fields, long range spin correlation functions decay rapidly, signaling a transition to a long-sought-after field-induced quantum spin liquid beyond the peak-dip structure. Kitaev systems are thus revealed to be excellent candidates for field-induced quantum spin liquids, similar physics having been suggested in another Kitaev material $α-$RuCl$_{3}$.

cond-mat.str-el↗

arXiv2018

Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 10^2 cm^2/Vs at room temperature in crystals with nearly ~10 atomic layers. These thicker FETs also show nearly zero threshold gate voltage for conduction and high ON to OFF current ratios when compared to the FETs built from thinner layers. We also demonstrate that it is possible to utilize this ambipolarity to fabricate logical elements or digital synthesizers. For instance, we demonstrate that one can produce simple, gate-voltage tunable phase modulators with the ability to shift the phase of the input signal by either 90^o or nearly 180^o. Given that it is possible to engineer these same elements with improved architectures, for example on h-BN in order to decrease the threshold gate voltage and increase the carrier mobilities, it is possible to improve their characteristics in order to engineer ultra-thin layered logic elements based on ReSe2.

cond-mat.mes-hall↗

arXiv2018

Anomalous metamagnetism in the low carrier density Kondo lattice YbRh3Si7

We report complex metamagnetic transitions in single crystals of the new low carrier Kondo antiferromagnet YbRh3Si7. Electrical transport, magnetization, and specific heat measurements reveal antiferromagnetic order at T_N = 7.5 K. Neutron diffraction measurements show that the magnetic ground state of YbRh3Si7 is a collinear antiferromagnet where the moments are aligned in the ab plane. With such an ordered state, no metamagnetic transitions are expected when a magnetic field is applied along the c axis. It is therefore surprising that high field magnetization, torque, and resistivity measurements with H||c reveal two metamagnetic transitions at mu_0H_1 = 6.7 T and mu_0H_2 = 21 T. When the field is tilted away from the c axis, towards the ab plane, both metamagnetic transitions are shifted to higher fields. The first metamagnetic transition leads to an abrupt increase in the electrical resistivity, while the second transition is accompanied by a dramatic reduction in the electrical resistivity. Thus, the magnetic and electronic degrees of freedom in YbRh3Si7 are strongly coupled. We discuss the origin of the anomalous metamagnetism and conclude that it is related to competition between crystal electric field anisotropy and anisotropic exchange interactions.

cond-mat.str-el↗

arXiv2018

Giant Anisotropic Magnetoresistance due to Purely Orbital Rearrangement in the Quadrupolar Heavy Fermion Superconductor PrV$_2$Al$_{20}$

We report the discovery of giant and anisotropic magnetoresistance due to the orbital rearrangement in a non-magnetic correlated metal. In particular, we measured the magnetoresistance under fields up to 31.4 T in the cubic Pr-based heavy fermion superconductor PrV$_2$Al$_{20}$ with a non-magnetic $Γ_3$ doublet ground state, exhibiting antiferro-quadrupole ordering below 0.7 K. For the [100] direction, we find that the high-field phase appears between 12 T and 25 T, accompanied by a large jump at 12 T in the magnetoresistance ($ΔMR \sim $ 100 $\% $) and in the anisotropic magnetoresistivity (AMR) ratio by $\sim $ 20 $\% $. These observations indicate that the strong hybridization between the conduction electrons and anisotropic quadrupole moments leads to the Fermi surface reconstruction upon crossing the field-induced antiferro-quadrupole (orbital) rearrangement.

cond-mat.str-el↗

arXiv2017

Van der Waals Schottky barriers as interface probes of the correlation between chemical potential shifts and charge density wave formation in 1T-TiSe$_2$ and 2H-NbSe$_2$

Layered transition metal dichalcogenide (TMD) materials, i.e. 1T-TiSe$_2$ and 2H-NbSe$_2$, harbor a second order charge density wave (CDW) transition where phonons play a key role for the periodic modulations of conduction electron densities and associated lattice distortions. We systematically study the transport and capacitance characteristics over a wide temperature range of Schottky barriers formed by intimately contacting freshly exfoliated flakes of 1T-TiSe$_2$ and 2H-NbSe$_2$ to \textit{n}-type GaAs semiconductor substrates. The extracted temperature-dependent parameters (zero-bias barrier height, ideality and built-in potential) reflect changes at the TMD/GaAs interface induced by CDW formation for both TMD materials. The measured built-in potential reveals chemical-potential shifts relating to CDW formation. With decreasing temperature a peak in the chemical-potential shifts during CDW evolution indicates a competition between electron energy re-distributions and a combination of lattice strain energies and Coulomb interactions. These modulations of chemical potential in CDW systems, such as 1T-TiSe$_2$ and 2H-NbSe$_2$ harboring second-order phase transitions, reflect a corresponding conversion from short to long-range order.

cond-mat.str-el↗

arXiv2017

Sequential Edge-Epitaxy in 2D Lateral Heterostructures

Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as tunneling transistors, light emitting devices and photodetectors, and as photovoltaic cells . Although complex vertical heterostructures were fabricated via van der Waals stacking of different 2D materials, atomically sharp multi-junctions in lateral heterostructures is a quite challenging task, but a viable route towards the development of commercial applications. Previously reported approaches to obtain single-junction lateral heterostructures of the type MoX2-WX2 (X= S and/or Se), involve either a single-step or a two-step growth process. However, these methods lack the flexibility to control the lateral width of the TMD domain as well as its composition. Here, we report a simple and yet scalable synthesis approach for the fabrication of lateral multi-junction heterostructures based on the combination of different TMD monolayers [MoX2-WX2 (X2 = S2, Se2 or SSe)]. Atomically sharp lateral junctions are sequentially synthesized from solid precursors by changing only the reactive gas environment in the presence of water vapor. This allows to selectively control the water-induced oxidation, volatilization and hence the relative amount of a specific metal oxide vapor, leading to the selective edge-epitaxial growth of either MoX2 or WX2. Spatially dependent photoluminescence and atomic-resolution images confirm the high crystallinity of the monolayers and the seamless lateral connectivity between the different TMD domains. These findings could be extended to other families of 2D materials, and creates the foundation towards the development of complex and atomically thin in-plane super-lattices, devices and integrated circuits.

cond-mat.mtrl-sci↗

arXiv2017

Spin excitations and the Fermi surface of superconducting FeS

High-temperature superconductivity occurs near antiferromagnetic instabilities and nematic state. Debate remains on the origin of nematic order in FeSe and its relation with superconductivity. Here, we use transport, neutron scatter- ing and Fermi surface measurements to demonstrate that hydro-thermo grown superconducting FeS, an isostructure of FeSe, is a tetragonal paramagnet without nematic order and with a quasiparticle mass significantly reduced from that of FeSe. Only stripe-type spin excitation is observed up to 100 meV. No direct coupling between spin excitation and superconductivity in FeS is found, suggesting that FeS is less correlated and the nematic order in FeSe is due to competing checkerboard and stripe spin fluctuations.

cond-mat.supr-con↗

arXiv2016

Photoconductivity of few-layered p-WSe2 phototransistors via multi-terminal measurements

Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) were extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect transistors (FETs). Here, we report a photoconductivity study from FETs built from few-layers of p-WSe2 measured in a multi-terminal configuration under illumination by a 532 nm laser source. The photogenerated current was measured as a function of the incident optical power, of the drain-to-source bias and of the gate voltage. We observe a considerably larger photoconductivity when the phototransistors were measured via a four-terminal configuration when compared to a two-terminal one. For an incident laser power of 248 nW, we extract 18 A/W and ~4000% for the two-terminal responsivity (R) and the concomitant external quantum efficiency (EQE) respectively, when a bias voltage Vds = 1 V and a gate voltage Vbg = 10 V are applied to the sample. R and EQE are observed to increase by 370% to ~85 A/W and ~20000% respectively, when using a four-terminal configuration. Thus, we conclude that previous reports have severely underestimated the optoelectronic response of transition metal dichalcogenides, which in fact reveals a remarkable potential for photosensing applications.

cond-mat.mes-hall↗