arXiv subjects

Luis Balicas

Publications and source records attributed to Luis Balicas.

70 records · Page 4Linked to original sources

arXiv2015

Non-stoichiometry and Defects in the Weyl Semimetals TaAs, TaP, NbP, and NbAs

We report a structural study of the Weyl semimetals TaAs, TaP, NbP, and NbAs, utilizing diffraction techniques (single crystal x-ray diffraction and energy dispersive spectroscopy) and imaging techniques (transmission electron microscopy/scanning transmission electron microscopy). We observe defects of various degrees, leading to non-stoichiometric single crystals of all four semimetals. While TaP displays a large pnictide deficiency with composition TaP$_{0.83(3)}$, and stacking faults accompanied by anti-site disorder and site vacancies, TaAs displays transition metal deficiency with composition Ta$_{0.92(2)}$As and a high density of stacking faults. NbP also displays pnictide deficiency, yielding composition NbP$_{0.95(2)}$, and lastly, NbAs display very little deviation from a 1:1 composition, NbAs$_{1.00(3)}$, and is therefore recommended to serve as the model compound for these semimetals.

cond-mat.mtrl-sci↗

arXiv2015

Pronounced photovoltaic response from multi-layered transition-metal dichalcogenides PN-junctions

Transition metal dichalcogenides (TMDs) are layered semiconductors with indirect band gaps comparable to Si. These compounds can be grown in large area, while their gap(s) can be tuned by changing their chemical composition or by applying a gate voltage. The experimental evidence collected so far, points towards a strong interaction with light, which contrasts with the small photovoltaic efficiencies $η\geq 1$ % extracted from bulk crystals or exfoliated monolayers. Here, we evaluate the potential of these compounds by studying the photovoltaic response of electrostatically generated PN-junctions composed of approximately ten atomic-layers of MoSe$_2$ stacked onto the dielectric $h$-BN. In addition to ideal diode-like response, we find that these junctions can yield, under AM-1.5 illumination, photovoltaic efficiencies $η$ exceeding 14 %, with fill-factors of ~ 70 %. Given the available strategies for increasing $η$ such as gap tuning, improving the quality of the electrical contacts, or the fabrication of tandem cells, our study suggests a remarkable potential for photovoltaic applications based on TMDs.

cond-mat.mes-hall↗

arXiv2015

Metal to insulator quantum-phase transition in few-layered ReS$_2$

In ReS$_2$ a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS$_2$ crystallizes in the 1T$^{\prime}$-structure which leads to anisotropic physical properties and whose concomitant electronic structure might host a non-trivial topology. Here, we report an overall evaluation of the anisotropic Raman response and the transport properties of few-layered ReS$_2$ field-effect transistors. We find that ReS$_2$ exfoliated on SiO$_2$ behaves as an $n$-type semiconductor with an intrinsic carrier mobility surpassing $μ_i$ ~30 cm$^2$/Vs at $T = 300$ K which increases up to ~350 cm$^2$/Vs at 2 K. Semiconducting behavior is observed at low electron densities $n$, but at high values of n the resistivity decreases by a factor > 7 upon cooling to 2 K and displays a metallic $T^2$-dependence. This indicates that the band structure of 1T$^{\prime}$-ReS$_2$ is quite susceptible to an electric field applied perpendicularly to the layers. The electric-field induced metallic state observed in transition metal dichalcogenides was recently claimed to result from a percolation type of transition. Instead, through a scaling analysis of the conductivity as a function of $T$ and $n$, we find that the metallic state of ReS$_2$ results from a second-order metal to insulator transition driven by electronic correlations. This gate-induced metallic state offers an alternative to phase engineering for producing ohmic contacts and metallic interconnects in devices based on transition metal dichalcogenides.

cond-mat.mes-hall↗

arXiv2015

Optoelectronic switch based on intrinsic dual Schottky diodes in ambipolar MoSe$_2$ field-effect transistors

Here, we report the observation of a hitherto unreported optoelectronic effect, namely a light-induced diode-like response in multi-layered MoSe$_2$ field-effect transistors whose sense of current rectification is controllable through a gate voltage. We argue, through numerical simulations, that this behavior results from the difference in the size of the Schottky barriers between drain and source metal contacts. Each barrier can be modeled as a Schottky diode but with opposite senses of current rectification between them, with the diode response resulting from the light induced promotion of photo-generated carriers across the smaller barrier. The back gate voltage controls the sense of current rectification by modulating the relative amplitude between them. This effect, which gives rise to a novel type of optoelectronic switch, also yields a photovoltaic response. Hence, it could provide an alternative to PN-junctions when harvesting photovoltaic currents from transition metal dichalcogenides. We argue that the photovoltaic efficiency associated to this effect could be increased by just increasing the relative asymmetry between both Schottky barriers. We also suggest that this new electro-optical effect has potential for technological applications.

cond-mat.mes-hall↗

arXiv2015

High Photoresponsivity and Short Photo Response Times in Few-Layered WSe$_2$ Transistors

Here, we report the photoconducting response of field-effect transistors based on three atomic layers of chemical vapor transport grown WSe$_2$ crystals mechanically exfoliated onto SiO$_2$. We find that tri-layered WSe$_2$ field-effect transistors, built with the simplest possible architecture, can display high hole mobilities ranging from 350 cm$^2$/Vs at room temperature (saturating at a value of ~500 cm$^2$/Vs below 50 K) displaying a strong photocurrent response which leads to exceptionally high photo responsivities up to 7 A/W under white light illumination of the entire channel for power densities p < 10$^2$ W/m$^2$. Under a fixed wavelength of $λ$ = 532 nm and a laser spot size smaller than the conducting channel area we extract photo responsitivities approaching 100 mA/W with concomitantly high external quantum efficiencies up to ~ 40 % at room temperature. These values surpass values recently reported from more complex architectures, such as graphene and transition metal dichalcogenides based heterostructures. Also, tri-layered WSe$_2$ photo-transistors display photo response times in the order of 10 microseconds. Our results indicate that the addition of a few atomic layers considerably decreases the photo response times, probably by minimizing the interaction with the substrates, while maintaining a very high photo-responsivity.

cond-mat.mes-hall↗

arXiv2015

Gate-modulated conductance of few-layer WSe_2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe2 field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1-2x10^13 /cm^2/eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices.

cond-mat.mes-hall↗

arXiv2015

Field induced density wave in the heavy fermion compound CeRhIn5

Metals containing Ce often show strong electron correlations due to the proximity of the 4f state to the Fermi energy, leading to strong coupling with the conduction electrons. This coupling typically induces a variety of competing ground states, including heavy-fermion metals, magnetism and unconventional superconductivity. The d-wave superconductivity in CeTMIn5 (TM=Co, Rh, Ir) has attracted significant interest due to its qualitative similarity to the cuprate high-Tc superconductors. Here, we show evidence for a field induced phase-transition to a state akin to a density-wave (DW) in the heavy fermion CeRhIn5, existing in proximity to its unconventional superconductivity. The DW state is signaled by a hysteretic anomaly in the in-plane resistivity accompanied by the appearance of non-linear electrical transport at high magnetic fields (>27T), which are the distinctive characteristics of density-wave states. The unusually large hysteresis enables us to directly investigate the Fermi surface of a supercooled electronic system and to clearly associate a Fermi surface reconstruction with the transition. Key to our observation is the fabrication of single crystal microstructures, which are found to be highly sensitive to "subtle" phase transitions involving only small portions of the Fermi surface. Such subtle order might be a common feature among correlated electron systems, and its clear observation adds a new perspective on the similarly subtle CDW state in the cuprates.

cond-mat.str-el↗

arXiv2014

Field-Induced Quadrupolar Quantum Criticality in PrV2Al20

PrV2Al20 is the heavy fermion superconductor based on the cubic Gamma3 doublet that exhibits non- magnetic quadrupolar ordering below ~ 0.6 K. Our magnetotransport study on PrV2Al20 reveals field-induced quadrupolar quantum criticality at Hc ~ 11 T applied along the [111] direction. Near the critical field Hc required to suppress the quadrupolar state, we find a marked enhancement of the resistivity rho(H, T), a divergent effective mass of quasiparticles and concomitant non-Fermi liquid (NFL) behavior (i.e. rho(T) ~ T^n with n < 0.5). We also observe the Shubnikov de Haas-effect above ?Hc, indicating the enhanced effective mass m/m0 ~ 10. This reveals the competition between the nonmagnetic Kondo effect and the intersite quadrupolar coupling, leading to the pronounced NFL behavior in an extensive region of T and H emerging from the quantum critical point.

cond-mat.str-el↗

arXiv2014

Critical current oscillations in the intrinsic hybrid vortex state of SmFeAs(O,F)

In layered superconductors the order parameter may be modulated within the unit cell, leading to non-trivial modifications of the vortex core if the interlayer coherence length $ξ_c(T)$ is comparable to the interlayer distance. In the iron-pnictide SmFeAs(O,F) ($T_c \approx 50$K) this occurs below a cross-over temperature $T^\star \approx 41$K, which separates two regimes of vortices: anisotropic Abrikosov-like at high and Josephson-like at low temperatures. Yet in the transition region around $T^\star$, hybrid vortices between these two characteristics appear. Only in this region around $T^\star$ and for magnetic fields well aligned with the FeAs layers, we observe oscillations of the c-axis critical current $j_c(H)$ periodic in $\frac{1}{\sqrt{H}}$ due to a delicate balance of intervortex forces and interaction with the layered potential. $j_c(H)$ shows pronounced maxima when a hexagonal vortex lattice is commensurate with the crystal structure. The narrow temperature window in which oscillations are observed suggests a significant suppression of the order parameter between the superconducting layers in SmFeAs(O,F), despite its low coherence length anisotropy ($γ_ξ\approx 3-5$).

cond-mat.supr-con↗

arXiv2014

Field-Effect Transistors Based on Few-Layered alpha-MoTe_2

Here we report the properties of field-effect transistors based on few layers of chemical vapor transport grown alpha- MoTe_2 crystals mechanically exfoliated onto SiO_2. We performed field-effect and Hall mobility measurements, as well as Raman scattering and transmission electron microscopy. In contrast to both MoS_2 and MoSe_2, our MoTe_2 field-effect transistors (FETs) are observed to be hole-doped, displaying on/off ratios surpassing 106 and typical sub-threshold swings of ~ 140 mV per decade. Both field-effect and Hall mobilities indicate maximum values approaching or surpassing 10 cm^2/Vs which are comparable to figures previously reported for single or bi-layered MoS_2 and/or for MoSe_2 exfoliated onto SiO_2 at room temperature and without the use of dielectric engineering. Raman scattering reveals sharp modes in agreement with previous reports, whose frequencies are found to display little or no dependence on the number of layers. Given that both MoS_2 is electron doped, the stacking of MoTe_2 onto MoS_2 could produce ambipolar field-effect transistors and a gap modulation. Although the overall electronic performance of MoTe_2 is comparable to those of MoS_2 and MoSe_2, the heavier element Te should lead to a stronger spin orbit-coupling and possibly to concomitantly longer decoherence times for exciton valley and spin indexes.

cond-mat.mes-hall↗

arXiv2013

Surface electronic structure of the topological Kondo insulator candidate correlated electron system SmB6

The Kondo insulator SmB6 has long been known to exhibit low temperature transport anomalies whose origin is of great interest. Here we uniquely access the surface electronic structure of the anomalous transport regime by combining state-of-the-art laser- and synchrotron-based angle-resolved photoemission techniques. We observe clear in-gap states (up to 4 meV), whose temperature dependence is contingent upon the Kondo gap formation. In addition, our observed in-gap Fermi surface oddness tied with the Kramers' points topology, their coexistence with the two-dimensional transport anomaly in the Kondo hybridization regime, as well as their robustness against thermal recycling, taken together, collectively provide by-far the strongest evidence for protected surface metallicity with a Fermi surface whose topology is consistent with the theoretically predicted topological surface Fermi surface (TSS). Our observations of systematic surface electronic structure provide the fundamental electronic parameters for the anomalous Kondo ground state of the correlated electron material SmB6.

cond-mat.str-el↗

arXiv2013

Topological properties of possible Weyl superconducting states of URu$_\mathbf{2}$Si$_\mathbf{2}$

We show that the current thermodynamic measurements in the superconducting phase of $\mathrm{U}\mathrm{Ru}_2\mathrm{Si}_2$ are compatible with two distinct singlet chiral paired states $k_z(k_x \pm i k_y)$ and $(k_x \pm i k_y)^2$. Despite possessing similar low temperature thermodynamic properties, these two pairings are topologically distinguished by their respective orbital angular momentum projections along the c-axis, $m=\pm 1$ and $m=\pm 2$. The point nodes of these states act as the monopoles and the anti-monopoles of the Berry's gauge flux of charge $\pm m$, which are separated in the momentum space along the $c$ axis. As a result, the Berry's flux through the $ab$ plane equals $m$. Consequently, the point nodes of $k_z(k_x+i k_y)$ and $(k_x \pm ik_y)^2$ states respectively realize the Weyl and the double-Weyl fermions, with chemical potential exactly tuned at the Fermi point, due to the charge conjugation symmetry. These topologically nontrivial point nodes, give rise to $m$ copies of protected spin degenerate, chirally dispersing surface states on the $ca$ and the $cb$ planes, which carry surface current, and their energies vanish at the Fermi arcs. In contrast, a line node acts as the momentum space vortex loop, and gives rise to the zero energy, dispersionless Andreev bound states on the surfaces parallel to the plane enclosed by the line node. The Berry's flux through the $ab$ plane gives rise to anomalous spin Hall and thermal Hall conductivities, and various magnetoelectric effects. A clear determination of the bulk invariant can only be achieved by probing the pairing symmetry via a corner Josephson junction measurement, and Fourier transformed STM measurements of the Fermi arcs. Therefore, we identify $\mathrm{U}\mathrm{Ru}_2\mathrm{Si}_2$ as a promising material for realizing gapless topological superconductivity in three spatial dimensions.

cond-mat.supr-con↗

arXiv2011

Anomalous insulator metal transition in boron nitride-graphene hybrid atomic layers

The study of two-dimensional (2D) electronic systems is of great fundamental significance in physics. Atomic layers containing hybridized domains of graphene and hexagonal boron nitride (h-BNC) constitute a new kind of disordered 2D electronic system. Magneto-electric transport measurements performed at low temperature in vapor phase synthesized h-BNC atomic layers show a clear and anomalous transition from an insulating to a metallic behavior upon cooling. The observed insulator to metal transition can be modulated by electron and hole doping and by the application of an external magnetic field. These results supported by ab-initio calculations suggest that this transition in h-BNC has distinctly different characteristics when compared to other 2D electron systems and is the result of the coexistence between two distinct mechanisms, namely, percolation through metallic graphene networks and hopping conduction between edge states on randomly distributed insulating h-BN domains.

cond-mat.mes-hall↗

arXiv2009

Hall plateaus at magic angles in bismuth beyond the quantum limit

We present a study of the angular dependence of the resistivity tensor up to 35 T in elemental bismuth complemented by torque magnetometry measurements in a similar configuration. For at least two particular field orientations a few degrees off the trigonal axis, the Hall resistivity was found to become field-independent within experimental resolution in a finite field window corresponding to a field which is roughly three times the frequency of quantum oscillations. The Hall plateaus rapidly vanish as the field is tilted off theses magic angles. We identify two distinct particularities of these specific orientations, which may play a role in the emergence of the Hall plateaus.

cond-mat.str-el↗

arXiv2008

High Field de Haas - van Alphen Studies of the Fermi Surfaces of LaMIn$_{5}$ (M = Co, Rh, Ir)

We report measurements of the de Haas - van Alphen effect on a series of compounds, LaMIn$_{5}$ (M = Co, Rh, Ir). The results show that each of the Co and Ir Fermi surfaces (FSs) exhibit some portions that are two dimensional and some portions that are three dimensional. The most two dimensional character is exhibited in LaCoIn$_{5}$, less two dimensional behavior is seen in LaIrIn$_{5}$, no part of Fermi surface of LaRhIn$_{5}$ is found to have a two dimensional character. Thus the two dimensionality of portions of the FSs is largely determined by the d character of the energy bands while all of the effective masses remain $\leq$ 1.2. This fact has implications for the causes of the heavy fermion nature of superconductivity and magnetism in the Ce-based compounds having the similar composition and structure. All of the measurements were performed at the National High Magnetic Field Laboratory using either cantilever magnetometry or field modulation methods.

cond-mat.str-el↗

arXiv2008

Signatures of Electron Fractionalization in Ultraquantum Bismuth

Because of the long Fermi wavelength of itinerant electrons, the quantum limit of elemental bismuth (unlike most metals) can be attained with a moderate magnetic field. The quantized orbits of electrons shrink with increasing magnetic field. Beyond the quantum limit, the circumference of these orbits becomes shorter than the Fermi wavelength. We studied transport coefficients of a single crystal of bismuth up to 33 tesla, which is deep in this ultraquantum limit. The Nernst coefficient presents three unexpected maxima that are concomitant with quasi-plateaus in the Hall coefficient. The results suggest that this bulk element may host an exotic quantum fluid reminiscent of the one associated with the fractional quantum Hall effect and raise the issue of electron fractionalization in a three-dimensional metal.

cond-mat.str-el↗