arXiv subjects

Luis E. Hueso

Publications and source records attributed to Luis E. Hueso.

At least 37 records · Page 2Linked to original sources

arXiv2026

Gate-tunable charge-spin interconversion in graphene/heavy-metal heterostructures

Spintronics has emerged as a promising field for next-generation devices, offering functionalities beyond complementary metal-oxide-semiconductor (CMOS). A critical challenge in spintronics is to develop systems that can efficiently generate spin currents and enable their long-distance transport. Here, we demonstrate a graphene (Gr)/heavy metal (HM) heterostructure system that combines strong charge-spin interconversion efficiency, induced by the spin Hall effect, with a long spin diffusion length. By employing an industry-friendly magnetron sputtering technique, we deposit HM layers onto few-layer Gr while minimizing structural damage. The proximity effect from the HM enhances the spin Hall angle of Gr while limiting the reduction in its spin diffusion length. Additionally, the spin Hall angle can be tuned via an applied gate voltage, offering high controllability of the system. Importantly, these properties are observed across heterostructures composed of different HMs, indicating the generality of this approach. Our findings establish Gr/HM heterostructures as a scalable and versatile platform for spin current generation, paving the way for advanced spintronic devices with high efficiency, long spin propagation, and straightforward fabrication processes.

cond-mat.mes-hall↗

arXiv2025

Degenerate monolayer Ising superconductors via chiral-achiral molecule intercalation

Engineering unconventional superconductors is a central challenge in condensed matter physics. Molecule-intercalated TaS2 superlattices have recently been reported to host such states, yet their origin remains debated, underscoring the urgent need for controlled, device-integrated studies. Here, we report that nanometer-thick TaS2 and NbSe2 intercalated with chiral and achiral organic cations instead exhibit robust monolayer-like Ising superconductivity, with no evidence of unconventional pairing. Using high-quality superlattices integrated into devices, we disentangle the roles of interlayer coupling and charge transfer in shaping their superconducting behavior. In TaS2, intercalation induces interlayer decoupling regardless of molecular size or symmetry, yielding monolayer-like Ising superconductivity. NbSe2 instead retains quasi-three-dimensional transport, with a gradual Ising enhancement and near-monolayer behavior only at the largest interlayer spacing. Transport remains reciprocal across all superlattices, consistent with preserved inversion symmetry and incompatible with parity-breaking superconductivity and noncentrosymmetric monolayers. We attribute the behavior to electronically detached monolayers with opposite spin-split bands, coupled through thermal and tunneling processes, which overall preserve inversion symmetry. These findings establish molecular intercalation compounds as a robust, device-ready, platform for engineering advanced superconducting superlattices.

cond-mat.supr-con↗

arXiv2025

Enhanced Superconductivity in 2H-TaS2 Devices Through in-situ Molecular Intercalation

The intercalation of guest species into the gap of van der Waals materials often leads to the emergence of intriguing phenomena, such as superconductivity. While intercalation-induced superconductivity has been reported in several bulk crystals, reaching a zero-resistance state in flakes remains challenging. Here, we show a simple method for enhancing the superconducting transition in tens-of-nm thick 2H-TaS2 crystals contacted by gold electrodes through in-situ intercalation. Our approach enables measuring the electrical characteristics of the same flake before and after intercalation, permitting us to precisely identify the effect of the guest species on the TaS2 transport properties. We find that the intercalation of amylamine molecules into TaS2 flakes causes a suppression of the charge density wave and an increase in the superconducting transition, with an onset temperature above 3 K. Additionally, we show that a fully developed zero-resistance state can be achieved in flakes by engineering the conditions of the chemical intercalation. Our findings pave the way for the integration of chemically tailored intercalation compounds in scalable quantum technologies.

cond-mat.supr-con↗

arXiv2025

Measuring the magnetic anisotropy of the spin Hall effect and spin relaxation length in nickel and permalloy via electrical spin injection

The spin Hall effect in ferromagnets is of great interest in the field of spintronics, and while the effect has been quantified in many materials, the dependence of the spin Hall angle on the relative orientation of spin polarization and the magnetization is less well studied. Of equal importance for the purpose of spin-charge interconversion in ferromagnets is the spin relaxation length, which is predicted to be highly anisotropic with respect to magnetization. Using a modified lateral spin valve geometry with a copper channel and permalloy spin injector, we measure the dependence of the spin Hall angle and spin relaxation length on magnetization orientation in permalloy and nickel, using two distinct device geometries. This allows us to disentangle the contributions of the spin relaxation length and spin Hall angle to the measured spin-charge interconversion voltage output. Our results indicate a large anisotropy in both the spin relaxation length and spin Hall angle in both permalloy and nickel, in agreement with theoretical calculations. The quantities change in opposite directions, with the spin relaxation length rising as the magnetization is moved parallel to the spin polarization and the spin Hall angle falling, leading to a near total cancellation of the spin-charge interconversion output.

cond-mat.mes-hall↗

arXiv2025

Orbital Hall conductivity and orbital diffusion length of Vanadium thin films by Hanle magnetoresistance

In spintronics, the spin Hall effect has been widely used to generate and detect spin currents in materials with strong spin-orbit coupling such as Pt and Ta. Recently, its orbital counterpart has drawn attention as a new tool to generate and detect orbital currents and thus investigate orbital transport parameters. In this study, we investigate vanadium (V), a $3d$ transition metal with weak spin-orbit coupling but with a theoretically large orbital Hall conductivity. We measure a large Hanle magnetoresistance in V thin films with a magnitude comparable to that of heavy metals and at least one order of magnitude higher than the spin Hall magnetoresistance observed in a Y$_3$Fe$_5$O$_{12}$/V bilayer, pointing to the orbital Hall origin of the effect. A fit of the magnetic-field dependence and thickness dependence of the Hanle magnetoresistance to the standard diffusion model allows us to quantify the orbital diffusion length (~2 nm) and the orbital Hall conductivity (~78 ($\hbar/2e$) $Ω^{-1}$cm$^{-1}$) of V. The obtained orbital Hall conductivity is two orders of magnitude smaller than theoretical calculations of the intrinsic value, suggesting there is an important role of disorder.

cond-mat.mes-hall↗

arXiv2025

Directional strong coupling at the nanoscale between hyperbolic polaritons and organic molecules

Strong coupling (SC) is a fundamental concept in physics that describes extreme interactions between light and matter. Recent experiments have demonstrated SC at the nanometer scale, where strongly confined polaritons, rather than photons, couple to quantum emitters or molecular vibrations. Coupling with the latter is generally referred to as vibrational SC (VSC) and is of significant fundamental and technological interest, as it can be an effective tool for modifying molecular properties. However, the implementation of VSC, especially at the nanoscale, depends on the development of tuning mechanisms that allow control over the coupling strength and, eventually, its directionality, opening the door for the selective coupling of specific molecular vibrations. Here we report the observation of directional VSC. Specifically, we show nanoscale images of propagating hyperbolic phonon polaritons (PhPs) coupled to pentacene molecules revealing that the fingerprint of VSC for propagating polaritons -- a marked anti-crossing in their dispersion at the vibrational resonance -- can be modulated as a function of the direction of propagation. In addition, we show that VSC can exhibit an optimal condition for thin molecular layers, characterized by a maximum coupling strength along one single direction. This phenomenon is understood by analysing the overlap of the polariton field with molecular layers of varying thicknesses. Apart from their fundamental importance, our findings promise novel applications for directional sensing or local directional control of chemical properties at the nanoscale.

cond-mat.mtrl-sci↗

arXiv2025

Gate tunable spin-charge interconversion in a graphene/ReS$_{2}$ heterostructure up to room temperature

Graphene is a material with great potential in the field of spintronics, combining good conductivity with low spin--orbit coupling (SOC), which allows for the transport of spin currents over long distances. However, this lack of SOC also limits the capacity for manipulating spin current. A key strategy to address this limitation is to induce SOC in graphene via proximity to other two-dimensional (2D) materials. Such proximity-induced SOC can enable spin--charge interconversion (SCI) in graphene, with potential applications in next-generation logic devices. Here, we place graphene in close proximity to the room-temperature ferroelectric candidate ReS$_\mathrm{2}$, inducing SCI for both in-plane and out-of-plane polarized spin current. We attribute the SCI for in-plane polarized current to either the Rashba--Edelstein effect (REE) or the unconventional spin Hall effect (SHE) at the graphene/ReS$_\mathrm{2}$ interface, and the SCI for out-of-plane polarized current to either the conventional SHE in the proximitised graphene, or the unconventional SHE in the bulk of the ReS$_\mathrm{2}$. SCI due to in-plane spin is characterised over a wide range of temperature, up to 300 K and a range of gate voltages.

cond-mat.mes-hall↗

arXiv2025

Detecting Lifshitz Transitions Using Nonlinear Conductivity in Bilayer Graphene

The second-order nonlinear electrical response (NLER) is an intrinsic property of inversion symmetry-broken systems which can provide deep insights into the electronic band structures of atomically thin quantum materials. However, the impact of Fermi surface reconstructions, also known as Lifshitz transitions, on the NLER has remained elusive. We investigated NLER in bilayer graphene (BLG), where the low-energy bands undergo Lifshitz transitions. Here, NLER undergoes a sign change near the Lifshitz transitions even at elevated temperatures $T\gtrsim10~$K. At the band edge, NLER in BLG is modulated by both extrinsic scattering and interfacial-strain-induced intrinsic Berry curvature dipole, both of which can be finely tuned externally by varying doping and interlayer potential. Away from the band edge, BLG exhibits second-order conductivity exceeding $30~μ$mV$^{-1}Ω^{-1}$ at 3K higher than any previous report. Our work establishes NLER as a reliable tool to probe Lifshitz transitions in quantum materials.

cond-mat.mes-hall↗

arXiv2025

Second-Order Conductivity Probes a Cascade of Singularities in a Moiré Superlattice

Systems lacking inversion symmetry inherently demonstrate a nonlinear electrical response (NLER) to an applied electric bias, emerging through extrinsic mechanisms. This response is highly sensitive to the electronic band structure, which can be engineered with remarkable precision in moiré superlattices formed from atomically thin quantum materials. Moiré superlattices host complex Fermi surface reconstructions near van Hove singularities (vHSs) in the electronic density of states. However, the role of these reconstructions in shaping NLER remains insufficiently understood. In this work, we systematically explore NLER in moiré superlattices of twisted double bilayer graphene (tDBLG) by tuning the Fermi level across multiple moiré bands on both sides of the charge neutrality point. We observe sharp variations and sign reversals in the NLER appearing via extrinsic pathways near mid-band vHSs. The second-order conductivity close to the vHSs demonstrates a much higher value than previous reports of extrinsic NLER in any other material. Our results demonstrate that NLER can serve as a sensitive probe of Fermi surface reconstructions and establish tDBLG as a versatile and highly efficient platform for generating and controlling the nonlinear electrical response.

cond-mat.mes-hall↗

arXiv2025

Unconventional magnon transport in antiferromagnet NiPS$_3$ induced by an anisotropic spin-flop transition

Nonlocal magnon transport can provide valuable insight into the magnetic properties of magnetic insulators (MIs). A spin-flop transition, a typical magnetic reorientation in antiferromagnets, is expected to affect mag non transport, but studies on this topic are still rare and remain challenging, especially for van der Waals materials. Here we demonstrate the unconventional magnon transport driven by an anisotropic spin-flop transition in the van der Waals antiferromagnet NiPS$_3$. Examining the nonlocal voltage from thermally driven magnons reveals sharp jumps at certain directions when an inplane magnetic field aligns with the b-axis of NiPS$_3$, attributed to an in-plane anisotropic spin-flop transition. Furthermore, thermally driven magnon signal exhibits a 1/d$^2$ decay in thin NiPS$_3$, evidencing that it is dominated by the intrinsic spin Seebeck effect. Our findings highlight that the electrical detection of magnon currents in a nonlocal device geometry serves as a powerful approach for studying magnetic phase transitions in MIs.

cond-mat.mes-hall↗

arXiv2025

Non-linear Transport in Non-centrosymmetric Systems: From Fundamentals to Applications

Ohm's law has been a cornerstone of electronics since its experimental discovery. This law establishes that in a conductive system, the voltage is directly proportional to the current. Even when time-reversal symmetry is disrupted, leading to the emergence of magnetoresistance and Hall effects, the linear relationship between voltage and current remains intact. However, recent experiments have demonstrated a breakdown of Ohm's law in non-centrosymmetric structures. In these systems, non-linear transport effects are permitted with quadratic scaling between voltages and currents. Here, we review the main demonstrations of non-linear transport in non-centrosymmetric systems, analyzing the connection between non-linear behavior and the system's symmetry. Additionally, we delve into the microscopic mechanisms driving these effects, such as Berry curvature dipole and Berry connection polarizability. Finally, we highlight potential applications of non-linear transport in spintronics and energy harvesting.

cond-mat.mes-hall↗

arXiv2025

Nonvolatile Electric Control of Antiferromagnet CrSBr

van der Waals magnets are emerging as a promising material platform for electric field control of magnetism, offering a pathway towards the elimination of external magnetic fields from spintronic devices. A further step is the integration of such magnets with electrical gating components which would enable nonvolatile control of magnetic states. However, this approach remains unexplored for antiferromagnets, despite their growing significance in spintronics. Here, we demonstrate nonvolatile electric field control of magnetoelectric characteristics in van der Waals antiferromagnet CrSBr. We integrate a CrSBr channel in a flash-memory architecture featuring charge trapping graphene multilayers. The electrical gate operation triggers a nonvolatile 200 % change in the antiferromagnetic state of CrSBr resistance by manipulating electron accumulation/depletion. Moreover, the nonvolatile gate modulates the metamagnetic transition field of CrSBr and the magnitude of magnetoresistance. Our findings highlight the potential of manipulating magnetic properties of antiferromagnetic semiconductors in a nonvolatile way.

cond-mat.mes-hall↗

arXiv2025

High-intensity wave vortices around subwavelength holes: from ocean tides to nanooptics

Vortices are ubiquitous in nature; they appear in a variety of phenomena ranging from galaxy formation in astrophysics to topological defects in quantum fluids. In particular, wave vortices have attracted enormous attention and found applications in optics, acoustics, electron microscopy, etc. Such vortices carry quantized phase singularities accompanied by zero intensity in the center, and quantum-like orbital angular momentum, with the minimum localization scale of the wavelength. Here we describe a conceptually novel type of wave vortices, which can appear around arbitrarily small `holes' (i.e., excluded areas or defects) in a homogeneous 2D plane. Such vortices are characterized by high intensity and confinement at the edges of the hole and hence subwavelength localization of the angular momentum. We demonstrate the appearance of such vortices in: (i) optical near fields around metallic nanodiscs on a dielectric substrate, (ii) phonon-polariton fields around nanoholes in a polaritonic slab, and (iii) ocean tidal waves around islands of New Zealand and Madagascar. We also propose a simple toy model of the generation of such subwavelength vortices via the interference of a point-dipole source and a plane wave, where the vortex sign is controlled by the mutual phase between these waves. Our findings open avenues for subwavelength vortex/angular-momentum-based applications in various wave fields.

physics.optics↗

arXiv2025

Symmetry Origin and Microscopic Mechanism of Electrical Magnetochiral Anisotropy in Tellurium

Non-linear transport effects in response to external magnetic fields, i.e. electrical magnetochiral anisotropy (eMChA), have attracted much attention for their importance to study quantum and spin-related phenomena. Indeed, they have permitted the exploration of topological surface states and charge-to-spin conversion processes in low-symmetry systems. Nevertheless, despite the inherent correlation between the symmetry of the material under examination and its non-linear transport characteristics, there is a lack of experimental demonstration to delve into this relationship and to unveil their microscopic mechanisms. Here, we study eMChA in chiral elemental Tellurium (Te) along different crystallographic directions, establishing the connection between the different eMChA components and the crystal symmetry of Te. We observed different longitudinal eMChA components with collinear current and magnetic field, demonstrating experimentally the radial angular momentum texture of Te. We also measured a transverse non-linear resistance which, as the longitudinal counterpart, scales bilinearly with current and magnetic fields, illustrating that they are different manifestations of the same effect. Finally, we study the scaling law of the eMChA, evidencing that extrinsic scattering from dynamic sources is the dominant microscopic mechanism. These findings underscore the efficacy of symmetry-based investigations in understanding and predicting non-linear transport phenomena, with potential applications in spintronics and energy harvesting.

cond-mat.mes-hall↗

arXiv2024

Unveiling intrinsic bulk photovoltaic effect in atomically thin ReS2

The bulk photovoltaic effect (BPVE) offers a promising avenue to surpass the efficiency limitations of current solar cell technology. However, disentangling intrinsic and extrinsic contributions to photocurrent remains a significant challenge. Here, we fabricate high-quality, lateral devices based on atomically thin ReS2 with minimal contact resistance, providing an optimal platform for distinguishing intrinsic bulk photovoltaic signals from other extrinsic photocurrent contributions originating from interfacial effects. Our devices exhibit large bulk photovoltaic performance with intrinsic responsivities of 1 mA/W in the visible range, without the need for external tuning knobs such as strain engineering. Our experimental findings are supported by theoretical calculations. Furthermore, our approach can be extrapolated to investigate the intrinsic BPVE in other non-centrosymmetric van der Waals materials, paving the way for a new generation of efficient light-harvesting devices.

cond-mat.mes-hall↗

arXiv2024

Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures

Spintronic devices require materials that facilitate effective spin transport, generation, and detection. In this regard, graphene emerges as an ideal candidate for long-distance spin transport owing to its minimal spin-orbit coupling, which, however, limits its capacity for effective spin manipulation. This problem can be overcome by putting spin-orbit coupling materials in close contact to graphene leading to spin-orbit proximity and, consequently, efficient spin-to-charge conversion through mechanisms such as the spin Hall effect. Here, we report and quantify the gate-dependent spin Hall effect in trilayer graphene proximitized with tin sulfide (SnS), a group-IV monochalcogenide which has recently been predicted to be a viable alternative to transition-metal dichalcogenides for inducing strong spin-orbit coupling in graphene. The spin Hall angle exhibits a maximum around the charge neutrality point of graphene up to room temperature. Our findings expand the library of materials that induce spin-orbit coupling in graphene to a new class, group-IV monochalcogenides, thereby highlighting the potential of two-dimensional materials to pave the way for the development of innovative spin-based devices and future technological applications.

cond-mat.mes-hall↗

arXiv2024

Gate-tunable Exchange Bias and Voltage-controlled Magnetization Switching in a van der Waals Ferromagnet

The discovery of van der Waals magnets has established a new domain in the field of magnetism, opening novel pathways for the electrical control of magnetic properties. In this context, Fe3GeTe2 (FGT) emerges as an exemplary candidate owing to its intrinsic metallic properties, which facilitate the interplay of both charge and spin degrees of freedom. Here, the bidirectional voltage control of exchange bias (EB) effect in a perpendicularly magnetized all-van der Waals FGT/O-FGT/hBN heterostructure is demonstrated. The antiferromagnetic O-FGT layer is formed by naturally oxidizing the FGT surface. The observed EB magnitude reaches 1.4 kOe with a blocking temperature (150 K) reaching close to the Curie temperature of FGT. Both the exchange field and the blocking temperature values are among the highest in the context of layered materials. The EB modulation exhibits a linear dependence on the gate voltage and its polarity, observable in both positive and negative field cooling (FC) experiments. Additionally, gate voltage-controlled magnetization switching, highlighting the potential of FGT-based heterostructures is demonstrated in advanced spintronic devices. These findings display a methodology to modulate the magnetism of van der Waals magnets offering new avenues for the development of high-performance magnetic devices.

cond-mat.mtrl-sci↗

arXiv2024

Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO$_3$ and ferromagnetic CoFe, for writing, and spin-to-charge current conversion between CoFe and Pt, for reading. We show that upon the electrical switching of the BiFeO$_3$, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. Through additional microscopy techniques, magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO$_3$. This study constitutes the building block for magnetoelectric spin-orbit logic, opening a new avenue for low-power beyond-CMOS technologies.

cond-mat.mes-hall↗