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M. A. Zudov

Publications and source records attributed to M. A. Zudov.

72 records · Page 4Linked to original sources

Microwave Photoresistance in dc-driven 2D Systems at Cyclotron Resonance Subharmonics

We study microwave photoresistivity oscillations in a high mobility two-dimensional electron system subject to strong dc electric fields. We find that near the second subharmonic of the cyclotron resonance the frequency of the resistivity oscillations with dc electric field is twice the frequency of the oscillations at the cyclotron resonance, its harmonics, or in the absence of microwave radiation. This observation is discussed in terms of the microwave-induced sidebands in the density of states and the interplay between different scattering processes in the separated Landau level regime.

cond-mat.mes-hall↗

Non-linear magnetotransport in microwave-illuminated two-dimensional electron systems

We study magnetoresistivity oscillations in a high-mobility two-dimensional electron system subject to both microwave and dc electric fields. First, we observe that the oscillation amplitude is a periodic function of the inverse magnetic field and is strongly suppressed at microwave frequencies near half-integers of the cyclotron frequency. Second, we obtain a complete set of conditions for the differential resistivity extrema and saddle points. These findings indicate the importance of scattering without microwave absorption and a special role played by microwave-induced scattering events antiparallel to the electric field.

cond-mat.mes-hall↗

Resonant Phonon Scattering in Quantum Hall Systems Driven by dc Electric Fields

Using dc excitation to spatially tilt Landau levels, we study resonant acoustic phonon scattering in two-dimensional electron systems. We observe that dc electric field strongly modifies phonon resonances, transforming resistance maxima into minima and back into maxima. Further, phonon resonances are enhanced dramatically in the non-linear dc response and can be detected even at low temperatures. Most of our observations can be explained in terms of dc-induced (de)tuning of the resonant acoustic phonon scattering and its interplay with intra-Landau level impurity scattering. Finally, we observe a dc-induced zero-differential resistance state and a resistance maximum which occurs when the electron drift velocity approaches the speed of sound.

cond-mat.mes-hall↗

Magnetoresistance Oscillations in Two-dimensional Electron Systems Induced by AC and DC Fields

We report on magnetotransport measurements in a high-mobility two-dimentional electron system subject simultaneously to AC (microwave) and DC (Hall) fields. We find that DC excitation affects microwave photoresistance in a nontrivial way. Photoresistance maxima (minima) evolve into minima (maxima) and back, reflecting strong coupling and interplay of AC- and DC-induced effects. Most of our observations can be explained in terms of indirect electron transitions using a new, ``combined'' resonant condition. Observed quenching of microwave-induced zero resistance by a DC field cannot be unambiguously linked to a domain model, at least until a systematic theory treating both excitation types within a single framework is developed.

cond-mat.mes-hall↗

Magnetotransport in a two-dimensional electron system in dc electric fields

We report on nonequilibrium transport measurements in a high-mobility two-dimensional electron system subject to weak magnetic field and dc excitation. Detailed study of dc-induced magneto-oscillations, first observed by Yang {\em et al}., reveals a resonant condition that is qualitatively different from that reported earlier. In addition, we observe dramatic reduction of resistance induced by a weak dc field in the regime of separated Landau levels. These results demonstrate similarity of transport phenomena in dc-driven and microwave-driven systems and have important implications for ongoing experimental search for predicted quenching of microwave-induced zero-resistance states by a dc current.

cond-mat.mes-hall↗

Bichromatic Microwave Photoresistance of Two-Dimensional Electron System

We explore experimentally bichromatic (frequencies $ω_1$ and $ω_2$) photoresistance of a two-dimensional electron system in the regimes of microwave-induced resistance oscillations and zero-resistance states. We find bichromatic resistance to be well described by a superposition of $ω_1$ and $ω_2$ components, provided that both monochromatic resistances are positive. This relation holds even when the oscillation amplitudes are small and one could expect additive contributions from monochromatic photoresistances. In contrast, whenever a zero-resistance state is formed by one of the frequencies, such superposition relation breaks down and the bichromatic resistance is strongly suppressed.

cond-mat.mes-hall↗

Multiphoton processes in microwave photoresistance of 2D electron system

We extend our studies of microwave photoresistance of ultra-high mobility two-dimensional electron system (2DES) into the high-intensity, non-linear regime employing both monochromatic and bichromatic radiation. Under high-intensity monochromatic radiation $ω$ we observe new zero-resistance states (ZRS) which correspond to rational values of $ε=ω/ω_C$ ($ω_C$ is the cyclotron frequency) and can be associated with multiphoton processes. %Formation of these rational ZRS is accompanied by a dramatic reconstruction of the photoresistance spectrum which reveals diminishing, narrowing, and phase reduction of the resistance peaks, as well as overall suppression of resistance at $ε<1/2$. Under bichromatic radiation $ω_1,ω_2$ we discover new resistance minimum, possibly a precursor of bichromatic ZRS, which seems to originate from a frequency mixing process, $ω_1+ω_2$. These findings indicate that multiphoton processes play important roles in the physics of non-equilibrium transport of microwave-driven 2DES, and suggest new directions for theoretical and experimental studies.

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Oscillatory and Vanishing Resistance States in Microwave Irradiated 2D Electron Systems

Giant-amplitude oscillations in dc magnetoresistance of a high-mobility two-dimensional electron system can be induced by millimeterwave irradiations, leading to zero-resistance states at the oscillation minima. Following a brief overview of the now well-known phenomenon, this paper reports on aspects of more recent experiments on the subject. These are: new zero-resistance states associated with multi-photon processes; suppression of Shubnikov-de Haas oscillations by high-frequency microwaves; and microwave photoconductivity of a high-mobility two-dimensional hole system.

cond-mat.mes-hall↗

Ultrahigh-Field Hole Cyclotron Resonance Absorption in InMnAs Films

We have carried out an ultrahigh-field cyclotron resonance study of p-type In1-xMnxAs films, with Mn composition x ranging from 0% to 2.5%, grown on GaAs by low-temperature molecular-beam epitaxy. Pulsed magnetic fields up to 500 T were used to make cyclotron resonance observable in these low-mobility samples. The clear observation of hole cyclotron resonance is direct evidence of the existence of a large number of itinerant, effective-mass-type holes rather than localized d-like holes. It further suggests that the p-d exchange mechanism is more favorable than the double exchange mechanism in this narrow gap InAs-based dilute magnetic semiconductor. In addition to the fundamental heavy-hole and light-hole cyclotron resonance absorption appearing near the high-magnetic-field quantum limit, we observed many inter-Landau-level absorption bands whose transition probabilities are stronglydependent on the sense of circular polarization of the incident light.

cond-mat.mtrl-sci↗

Electronic States and Cyclotron Resonance in n-type InMnAs

We present a theory for electronic and magneto-optical properties of n-type In(1-x)Mn(x)As magnetic alloy semiconductors in a high magnetic field, B. We use an 8-band Pidgeon-Brown model generalized to include the wavevector (Kz) dependence of the electronic states as well as s-d and p-d exchange interactions with localized Mn d-electrons. Calculated conduction-band Landau levels exhibit effective masses and g factors that are strongly dependent on temperature, magnetic field, Mn concentration (x), and Kz. Cyclotron resonance (CR) spectra are computed using Fermi's golden rule and compared with ultrahigh-magnetic-field (> 50 T) CR experiments, which show that the electron CR peak position is sensitive to x. Detailed comparison between theory and experiment allowed us to extract s-d and p-d exchange parameters, alpha and beta. we find that not only alpha but also beta affects the electron mass because of the strong interband coupling in this narrow gap semiconductor. In addition, we derive analytical expressions for the effective masses and g facors within the 8-band model. Results indicate that (alpha - beta) is the crucial parameter that determines the exchange interaction correction to the cyclotron masses. These findings sould be useful for designing novel devices based on ferromagnetic semiconductors.

cond-mat.mes-hall↗

On the phase of oscillatory microwave photoresistance and zero-resistance states

We present phenomenological analysis of the period and the phase of oscillatory microwave photoresistance (OMP) and zero-resistance states (ZRS) recently observed in 2D electron systems. The results demonstrate that as OMP evolves into ZRS with increasing magnetic field, the absolute value of the phase becomes progressively smaller, decreasing roughly as 1/B. Virtually eliminating a phase-shift and resulting in different periodicities for the maxima and minima, such specific dependence is supported by a simple model based on oscillatory density of states. Finally, it follows that fine structures first reported in Ref. 3 can be viewed as an experimental evidence for multi-photon processes.

cond-mat.mes-hall↗

Weak Localization in an Ultradense 2D Electron Gas in $δ$-doped Silicon

An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can easily reach $\sim 10^{14}$ cm$^{-2}$, exceeding that typically found in GaAs/AlGaAs structures by more than two-three orders of magnitude. We report on a first systematic characterization of such novel system by means of standard magnetotransport. The main findings include logarithmic temperature dependence of zero-field conductivity and logarithmic negative magnetoresistance. We analyzed the results in terms of scaling theory of localization in two dimensions.

cond-mat↗

Observation of Apparently Zero-Conductance States in Corbino Samples

Using Corbino samples we have observed oscillatory conductance in a high-mobility two-dimensional electron system subjected to crossed microwave and magnetic fields. On the strongest of the oscillation minima the conductance is found to be vanishingly small, possibly indicating an insulating state associated with these minima.

cond-mat.mes-hall↗

Evidence for a New Dissipationless Regime in 2D Electronic Transport

In an ultra-clean 2D electron system (2DES) subjected to crossed millimeterwave (30--150 GHz) and weak (B < 2 kG) magnetic fields, a series of apparently dissipationless states emerges as the system is detuned from cyclotron resonances. Such states are characterized by an exponentially vanishing low-temperature longitudinal resistance and a classical Hall resistance. The activation energies associated with such states exceeds the Landau level spacing by an order of magnitude. Our findings are likely indicative of a collective ground state previously unknown for 2DES.

cond-mat.str-el↗

Terahertz magneto-spectroscopy of transient plasmas in semiconductors

Using synchronized near-infrared (NIR) and terahertz (THz) lasers, we have performed picosecond time-resolved THz spectroscopy of transient carriers in semiconductors. Specifically, we measured the temporal evolution of THz transmission and reflectivity after NIR excitation. We systematically investigated transient carrier relaxation in GaAs and InSb with varying NIR intensities and magnetic fields. Using this information, we were able to determine the evolution of the THz absorption to study the dynamics of photocreated carriers. We developed a theory based on a Drude conductivity with time-dependent density and density-dependent scattering lifetime, which successfully reproduced the observed plasma dynamics. Detailed comparison between experimental and theoretical results revealed a linear dependence of the scattering frequency on density, which suggests that electron-electron scattering is the dominant scattering mechanism for determining the scattering time. In InSb, plasma dynamics was dramatically modified by the application of a magnetic field, showing rich magneto-reflection spectra, while GaAs did not show any significant magnetic field dependence. We attribute this to the small effective masses of the carriers in InSb compared to GaAs, which made the plasma, cyclotron, and photon energies all comparable in the density, magnetic field, and wavelength ranges of the current study.

cond-mat↗

Ultrahigh field electron cyclotron resonance absorption in In$_{1-x}$Mn$_x$As films

We have carried out an ultrahigh field cyclotron resonance study of $n$-type In$_{1-x}$Mn$_x$As films, with Mn composition $x$ ranging from 0 to 12%, grown on GaAs by low temperature molecular beam epitaxy. We observe that the electron cyclotron resonance peak shifts to lower field with increasing $x$. A detailed comparison of experimental results with calculations based on a modified Pidgeon-Brown model allows us to estimate the {\em s-d} and {\em p-d} exchange coupling constants, $α$ and $β$, for this important III-V dilute magnetic semiconductor system.

cond-mat.mtrl-sci↗

A New Class of Magnetoresistance Oscillations: Interaction of a Two-Dimensional Electron Gas with Leaky Interface Phonons

We report on a new class of magnetoresistance oscillations observed in a high-mobility two-dimensional electron gas (2DEG) in GaAs-Al$_x$Ga$_{1-x}$As heterostructures. Appearing in a weak magnetic field ($B<$ 0.3 T) and only in a narrow temperature range (2 K $<T<$ 9 K), these oscillations are periodic in 1/B with a frequency proportional to the electron Fermi wave vector, $k_F$. We interpret the effect as a magnetophonon resonance of the 2DEG with leaky interface-acoustic phonon modes carrying a wave vector $q=2k_F$. Calculations show a few branches of such modes on the GaAs-Al$_x$Ga$_{1-x}$As interface, and their velocities are in quantitative agreement with the data.

cond-mat.mes-hall↗

Microwave Photoresistance Measurements of Magneto-excitations near a 2D Fermi Surface

We report the detection of the cyclotron(CR) and magneto-plasmon(MPR) resonances near the Fermi surface of high-mobility 2DES, by microwave photoresistance measurements. We observe large amplitude photoresistance oscillations originating from higher-order CR, transitions between non-adjacent Landau levels. Such transitions are drastically enhanced in low magnetic field as compared to those previously known in the high field limit. The scattering time of the CR is found to be nearly one order of magnitude higher than that of Shubnikov-de-Haas oscillations. Finally, distinct photoresistance peaks are observed in addition to the CR features. These are identified as resonances of the low-frequency MP modes at a cut-off wavelength determined by the width of the 2DES sample.

cond-mat.str-el↗