arXiv subjects

M. Bayer

Publications and source records attributed to M. Bayer.

198 records · Page 11Linked to original sources

arXiv2007

Spin coherence of holes in GaAs/AlGaAs quantum wells

The carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas has been studied by picosecond pump-probe Kerr rotation with an in-plane magnetic field. For resonant optical excitation of the positively charged exciton the spin precession shows two types of oscillations. Fast oscillating electron spin beats decay with the radiative lifetime of the charged exciton of 50 ps. Long lived spin coherence of the holes with dephasing times up to 650 ps. The spin dephasing time as well as the in-plane hole g factor show strong temperature dependence, underlining the importance of hole localization at cryogenic temperatures.

cond-mat.other↗

arXiv2007

Robust manipulation of electron spin coherence in an ensemble of singly charged quantum dots

Using the recently reported mode locking effect we demonstrate a highly robust control of electron spin coherence in an ensemble of (In,Ga)As quantum dots during the single spin coherence time. The spin precession in a transverse magnetic field can be fully controlled up to 25 K by the parameters of the exciting pulsed laser protocol such as the pulse train sequence, leading to adjustable quantum beat bursts in Faraday rotation. Flipping of the electron spin precession phase was demonstrated by inverting the polarization within a pulse doublet sequence.

physics.optics↗

arXiv2007

Dynamic Glass Transition in Two Dimensions

The question about the existence of a structural glass transition in two dimensions is studied using mode coupling theory (MCT). We determine the explicit d-dependence of the memory functional of mode coupling for one-component systems. Applied to two dimensions we solve the MCT equations numerically for monodisperse hard discs. A dynamic glass transition is found at a critical packing fraction phi_c^{d=2} = 0.697 which is above phi_c^{d=3} = 0.516 by about 35%. phi^d_c scales approximately with phi^d_{\rm rcp} the value for random close packing, at least for d=2, 3. Quantities characterizing the local, cooperative 'cage motion' do not differ much for d=2 and d=3, and we e.g. find the Lindemann criterion for the localization length at the glass transition. The final relaxation obeys the superposition principle, collapsing remarkably well onto a Kohlrausch law. The d=2 MCT results are in qualitative agreement with existing results from MC and MD simulations. The mean squared displacements measured experimentally for a quasi-two-dimensional binary system of dipolar hard spheres can be described satisfactorily by MCT for monodisperse hard discs over four decades in time provided the experimental control parameter Gamma (which measures the strength of dipolar interactions) and the packing fraction phi are properly related to each other.

cond-mat.soft↗

arXiv2006

Universal behavior of the electron g-factor in GaAs/AlGaAs quantum wells

The Zeeman splitting and the underlying value of the g-factor for conduction band electrons in GaAs/Al_xGa_{1-x}As quantum wells have been measured by spin-beat spectroscopy based on a time-resolved Kerr rotation technique. The experimental data are in good agreement with theoretical predictions. The model accurately accounts for the large electron energies above the GaAs conduction band bottom, resulting from the strong quantum confinement. In the tracked range of optical transition energies E from 1.52 to 2.0eV, the electron g-factor along the growth axis follows closely the universal dependence g_||(E)= -0.445 + 3.38(E-1.519)-2.21(E-1.519)^2 (with E measured in eV); and this universality also embraces Al_xGa_{1-x}As alloys. The in-plane g-factor component deviates notably from the universal curve, with the degree of deviation controlled by the structural anisotropy.

physics.optics↗

arXiv2006

Radiative emission dynamics of quantum dots in a single cavity micropillar

The light emission of self-assembled (In,Ga)As/GaAs quantum dots embedded in single GaAs-based micropillars has been studied by time-resolved photoluminescence spectroscopy. The altered spontaneous emission is found to be accompanied by a non-exponential decay of the photoluminescence where the decay rate strongly depends on the excitation intensity. A microscopic theory of the quantum dot photon emission is used to explain both, the non-exponential decay and its intensity dependence. Also the transition from spontaneous to stimulated emission is studied.

cond-mat.other↗

arXiv2006

Millisecond spin lifetimes in quantum dots at zero applied magnetic field due to strong electron-nuclear interaction

A key to achieving ultra-long electron spin memory in quantum dots (QDs) at 0~$T$ is the polarization of the nuclei, such that the electron spin is stabilized along the nuclear magnetic field. We demonstrate that spin-polarized electrons in n-doped QDs align the nuclear field via the hyperfine interaction. A feedback onto the electrons occurs, leading to stabilization of electron polarization. We suggest that the coupled electron-nuclear system forms a rigid nuclear spin polaron state as predicted by I.A.~Merkulov, for which spin memory is retained over millisecond lifetimes.

cond-mat.other↗

arXiv2006

Optical control of spin coherence in singly charged (In,Ga)As/GaAs quantum dots

Electron spin coherence has been generated optically in n-type modulation doped (In,Ga)As/GaAs quantum dots (QDs) which contain on average a single electron per dot. The coherence arises from resonant excitation of the QDs by circularly-polarized laser pulses, creating a coherent superposition of an electron and a trion state. Time dependent Faraday rotation is used to probe the spin precession of the optically oriented electrons about a transverse magnetic field. Spin coherence generation can be controlled by pulse intensity, being most efficient for (2n+1)pi-pulses.

physics.optics↗

arXiv2006

Multiple transfer of angular momentum quanta from a spin-polarized hole to magnetic ions in ZnMnSe/ZnBeSe quantum wells

The magnetization kinetics in (Zn,Mn)Se/(Zn,Be)Se quantum wells has been studied on a ps-time scale after pulsed laser excitation. The magnetization induced by an external magnetic field is reduced by up to 30% during ~100 ps due to spin and energy transfer from photocarriers to Mn spin system. The giant Zeeman splitting leads to a complete spin polarization of the carriers, resulting in a strong suppression of flip-flop processes between carriers and magnetic ions. Therefore a multiple angular momentum transfer from each spin-polarized hole to the Mn ions becomes the dominant mechanism in the magnetization dynamics. A model based on spin-momentum coupling in the valence band is suggested for explaining this transfer.

cond-mat.mtrl-sci↗

arXiv2006

Electric field control of magnetization dynamics in ZnMnSe/ZnBeSe diluted-magnetic-semiconductor heterostructures

We show that the magnetization dynamics in diluted magnetic semiconductors can be controlled separately from the static magnetization by means of an electric field. The spin-lattice relaxation (SLR) time of magnetic Mn2+ ions was tuned by two orders of magnitude by a gate voltage applied to n-type modulation-doped (Zn,Mn)Se/(Zn,Be)Se quantum wells. The effect is based on providing an additional channel for SLR by a two-dimensional electron gas (2DEG). The static magnetization responsible for the giant Zeeman spin splitting of excitons was not influenced by the 2DEG density.

cond-mat.mtrl-sci↗

arXiv2006

Tailored quantum dots for entangled photon pair creation

We compare the asymmetry-induced exchange splitting delta_1 of the bright-exciton ground-state doublet in self-assembled (In,Ga)As/GaAs quantum dots, determined by Faraday rotation, with its homogeneous linewidth gamma, obtained from the radiative decay in time-resolved photoluminescence. Post-growth thermal annealing of the dot structures leads to a considerable increase of the homogeneous linewidth, while a strong reduction of the exchange splitting is simultaneously observed. The annealing can be tailored such that delta_1 and gamma become comparable, whereupon the carriers are still well confined. This opens the possibility to observe polarization entangled photon pairs through the biexciton decay cascade.

physics.optics↗

arXiv2006

Engineering of spin-lattice relaxation dynamics by digital growth of diluted magnetic semiconductor CdMnTe

The technological concept of "digital alloying" offered by molecular-beam epitaxy is demonstrated to be a very effective tool for tailoring static and dynamic magnetic properties of diluted magnetic semiconductors. Compared to common "disordered alloys" with the same Mn concentration, the spin-lattice relaxation dynamics of magnetic Mn ions has been accelerated by an order of magnitude in (Cd,Mn)Te digital alloys, without any noticeable change in the giant Zeeman spin splitting of excitonic states, i.e. without effect on the static magnetization. The strong sensitivity of the magnetization dynamics to clustering of the Mn ions opens a new degree of freedom for spin engineering.

cond-mat.mtrl-sci↗

arXiv2005

Coherent spin dynamics of an interwell excitons gas in GaAs/AlGaAs coupled quantum wells

The spin dynamics of an interwell excitons gas has been investigated in n-i-n GaAs/AlGaAs coupled quantum wells (CQWs). In these heterostructures the electron and the hole are spatially separated in neighboring quantum wells by a narrow AlAs barrier, when an electric field is applied. The time evolution kinetics of the interwell exciton photoluminescence has been measured under resonant excitation of the 1sHH intrawell exciton, using a pulsed tunable laser. The formation of a collective exciton phase in time and the temperature dependence of its spin relaxation rate have been studied. The spin relaxation rate of the interwell excitons is strongly reduced in the collective phase. This observation provides evidence for the coherence of the indirect excitons collective phase at temperatures below a critical $T_c$.

cond-mat.mes-hall↗

arXiv2005

Spin-lattice relaxation of Mn-ions in ZnMnSe/ZnBeSe quantum wells measured under pulsed photoexcitation

The dynamics of spin-lattice relaxation of the Mn-ions in (Zn,Mn)Se-based diluted-magnetic-semiconductor quantum wells is studied by time-resolved photoluminescence. The spin-lattice relaxation time varies by five orders of magnitude from 10-3 down to 10-8 s, when the Mn content increases from 0.4 up to 11%. Free carriers play an important role in this dynamics. Hot carriers with excess kinetic energy contribute to heating of the Mn system, while cooling of the Mn system occurs in the presence of cold background carriers provided by modulation doping. In a Zn0.89Mn0.11Se quantum well structure, where the spin-lattice relaxation process is considerably shorter than the characteristic lifetime of nonequilibrium phonons, also the phonon dynamics and its contribution to heating of the Mn system are investigated.

cond-mat.mtrl-sci↗

arXiv2005

Exciton lifetime in InAs/GaAs quantum dot molecules

The exciton lifetimes $T_1$ in arrays of InAs/GaAs vertically coupled quantum dot pairs have been measured by time-resolved photoluminescence. A considerable reduction of $T_1$ by up to a factor of $\sim$ 2 has been observed as compared to a quantum dots reference, reflecting the inter-dot coherence. Increase of the molecular coupling strength leads to a systematic decrease of $T_1$ with decreasing barrier width, as for wide barriers a fraction of structures shows reduced coupling while for narrow barriers all molecules appear to be well coupled. The coherent excitons in the molecules gain the oscillator strength of the excitons in the two separate quantum dots halving the exciton lifetime. This superradiance effect contributes to the previously observed increase of the homogeneous exciton linewidth, but is weaker than the reduction of $T_2$. This shows that as compared to the quantum dots reference pure dephasing becomes increasingly important for the molecules.

cond-mat.mes-hall↗

arXiv2005

Non-linear exciton spin-splitting in single InAs/GaAs self-assembled quantum structures in ultrahigh magnetic fields

We report on the magnetic field dispersion of the exciton spin-splitting and diamagnetic shift in single InAs/GaAs quantum dots (QDs) and dot molecules (QDMs) up to $B$ = 28 T. Only for systems with strong geometric confinement, the dispersions can be well described by simple field dependencies, while for dots with weaker confinement considerable deviations are observed: most importantly, in the high field limit the spin-splitting shows a non-linear dependence on $B$, clearly indicating light hole admixtures to the valence band ground state.

cond-mat.mes-hall↗

arXiv2005

Electron cyclotron mass in undoped CdTe/CdMnTe quantum wells

Optically detected cyclotron resonance of two-dimensional electrons has been studied in nominally undoped CdTe/(Cd,Mn)Te quantum wells. The enhancement of carrier quantum confinement results in an increase of the electron cyclotron mass from 0.099$m_0 $ to 0.112$m_0 $ with well width decreasing from 30 down to 3.6 nm. Model calculations of the electron effective mass have been performed for this material system and good agreement with experimental data is achieved for an electron-phonon coupling constant $α$=0.32.

cond-mat.mes-hall↗

arXiv2004

Correlated Photon-Pair Emission from a Charged Single Quantum Dot

The optical creation and recombination of charged biexciton and trion complexes in an (In,Ga)As/GaAs quantum dot is investigated by micro-photoluminescence spectroscopy. Photon cross-correlation measurements demonstrate the temporally correlated decay of charged biexciton and trion states. Our calculations provide strong evidence for radiative decay from the excited trion state which allows for a deeper insight into the spin configurations and their dynamics in these systems.

cond-mat.other↗

arXiv2002

Photoluminescence investigations of 2D hole Landau levels in p-type single Al_{x}Ga_{1-x}As/GaAs heterostructures

We study the energy structure of two-dimensional holes in p-type single Al_{1-x}Ga_{x}As/GaAs heterojunctions under a perpendicular magnetic field. Photoluminescence measurments with low densities of excitation power reveal rich spectra containing both free and bound-carrier transitions. The experimental results are compared with energies of valence-subband Landau levels calculated using a new numerical procedure and a good agreement is achieved. Additional lines observed in the energy range of free-carrier recombinations are attributed to excitonic transitions. We also consider the role of many-body effects in photoluminescence spectra.

cond-mat.mtrl-sci↗