arXiv subjects

M. Bichler

Publications and source records attributed to M. Bichler.

At least 37 records · Page 2Linked to original sources

arXiv2009

Magneto-electrical subbands of freely suspended quantum point contacts

We present a versatile design of freely suspended quantum point contacts with particular large one-dimensional subband quantization energies of up to 10meV. The nanoscale bridges embedding a two-dimensional electron system are fabricated from AlGaAs/GaAs heterostructures by electron-beam lithography and etching techniques. Narrow constrictions define quantum point contacts that are capacitively controlled via local in-plane side gates. Employing transport spectroscopy, we investigate the transition from electrostatic subbands to Landau-quantization in a perpendicular magnetic field. The large subband quantization energies allow us to utilize a wide magnetic field range and thereby observe a large exchange splitted spin-gap of the two lowest Landau-levels.

cond-mat.mes-hall↗

arXiv2009

Selective Optical Charge Generation, Storage and Readout in a Single Self Assembled Quantum Dot

We report the investigation of a single quantum dot charge storage device. The device allows selective optical charging of a single dot with electrons, storage of these charges over timescales much longer than microseconds and reliable optical readout of the charge occupancy using a time gated photoluminescence technique. This device enables us to directly investigate the electric field dependent tunneling escape dynamics of electrons at high electric fields over timescales up to 4 us. The results demonstrate that such structures and measurement techniques can be used to investigate charge and spin dynamics in single quantum dots over microsecond timescales.

cond-mat.mes-hall↗

arXiv2008

Diffraction Gratings for Neutrons from Polymers and Holographic Polymer-Dispersed Liquid Crystals

We discuss the applicability of holographically recorded gratings in photopolymers and holographic polymer-dispersed liquid crystals as neutron optical elements. An experimental investigation of their properties for light and neutrons with different grating spacings and grating thicknesses is performed. The angular dependencies of the diffraction efficiencies for those gratings are interpreted in terms of a rigourous coupled wave analysis. Starting from the obtained results we work out the lines for the production of an optimised neutron optical diffraction grating, i.e., high diffraction efficiency in the Bragg diffraction regime with moderate angular selectivity.

physics.optics↗

arXiv2008

Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass

We studied a doping series of (110)-oriented AlAs quantum wells (QWs) and observed transport evidence of single anisotropic-mass valley occupancy for the electrons in a 150 Åwide QW. Our calculations of strain and quantum confinement for these samples predict single anisotropic-mass valley occupancy for well widths $W$ greater than 53 Å. Below this, double-valley occupation is predicted such that the longitudinal mass axes are collinear. We observed mobility anisotropy in the electronic transport along the crystallographic directions in the ratio of 2.8, attributed to the mass anisotropy as well as anisotropic scattering of the electrons in the X-valley of AlAs.

cond-mat.mes-hall↗

arXiv2008

Nanometer-scale sharpness in corner-overgrown heterostructures

A corner-overgrown GaAs/AlGaAs heterostructure is investigated with transmission and scanning transmission electron microscopy, demonstrating self-limiting growth of an extremely sharp corner profile of 3.5 nm width. In the AlGaAs layers we observe self-ordered diagonal stripes, precipitating exactly at the corner, which are regions of increased Al content measured by an XEDS analysis. A quantitative model for self-limited growth is adapted to the present case of faceted MBE growth, and the corner sharpness is discussed in relation to quantum confined structures. We note that MBE corner overgrowth maintains nm-sharpness even after microns of growth, allowing the realization of corner-shaped nanostructures.

cond-mat.mtrl-sci↗

arXiv2008

Hopping conduction in strongly insulating states of a diffusive bent quantum Hall junction

Transport studies of a bent quantum Hall junction at integer filling factors show strongly insulating states at higher fields. In this paper we analyze the strongly insulating behavior as a function of temperature T and dc bias V, in order to classify the localization mechanisms responsible for the insulating state. The temperature dependence suggests a crossover from activated nearest-neighbor hopping at higher T to variable-range hopping conduction at lower T. The base temperature electric field dependence is consistent with 1D variable-range hopping conduction. We observe almost identical behavior at filling factors 1 and 2, and discuss how the bent quantum Hall junction conductance appears to be independent of the bulk spin state. Various models of 1D variable-range hopping which either include or ignore interactions are compared, all of which are consistent with the basic model of disorder coupled counter-propagating quantum Hall edges.

cond-mat.mes-hall↗

arXiv2008

A Charge and Spin Readout Scheme For Single Self-Assembled Quantum Dots

We propose an all optical spin initialization and readout concept for single self assembled quantum dots and demonstrate its feasibility. Our approach is based on a gateable single dot photodiode structure that can be switched between charge and readout mode. After optical electron generation and storage, we propose to employ a spin-conditional absorption of a circularly polarized light pulse tuned to the single negatively charged exciton transition to convert the spin information of the resident electron to charge occupancy. Switching the device to the charge readout mode then allows us to probe the charge state of the quantum dot (1e, 2e) using non-resonant luminescence. The spin orientation of the resident electron is then reflected by the photoluminescence yield of doubly and singly charged transitions in the quantum dot. To verify the feasibility of this spin readout concept, we have applied time gated photoluminescence to confirm that selective optical charging and efficient non perturbative measurement of the charge state can be performed on the same dot. The results show that, by switching the electric field in the vicinity of the quantum dot, the charging rate can be switched between a regime of efficient electron generation and a readout regime, where the charge occupancy and, therefore, the spin state of the dot can be tested via PL over millisecond timescales, without altering it.

cond-mat.mes-hall↗

arXiv2008

Cavity-resonant excitation for efficient single photon generation

We present an efficiently pumped single photon source based on single quantum dots (QD) embedded in photonic crystal nanocavities. Resonant excitation of a QD via a higher order cavity mode results in a 100$\times$ reduced optical power at the saturation onset of the photoluminescence, compared with excitation at the same frequency, after the cavity mode is detuned. Furthermore, we demonstrate that this excitation scheme leads to selective excitation of QDs coupled to the cavity by comparing photoluminescence and auto-correlation spectra for the same excitation wavelength with and without the cavity mode. This provides much cleaner conditions for single photon generation.

cond-mat.mes-hall↗

arXiv2008

Observation of extremely slow hole spin relaxation in self-assembled quantum dots

We report the measurement of extremely slow hole spin relaxation dynamics in small ensembles of self-assembled InGaAs quantum dots. Individual spin orientated holes are optically created in the lowest orbital state of each dot and read out after a defined storage time using spin memory devices. The resulting luminescence signal exhibits a pronounced polarization memory effect that vanishes for long storage times. The hole spin relaxation dynamics are measured as a function of external magnetic field and lattice temperature. We show that hole spin relaxation can occur over remarkably long timescales in strongly confined quantum dots (up to ~270 us), as predicted by recent theory. Our findings are supported by calculations that reproduce both the observed magnetic field and temperature dependencies. The results suggest that hole spin relaxation in strongly confined quantum dots is due to spin orbit mediated phonon scattering between Zeeman levels, in marked contrast to higher dimensional nanostructures where it is limited by valence band mixing.

cond-mat.mes-hall↗

arXiv2008

Investigation of Non Resonant Dot - Cavity Coupling in Two Dimensional Photonic Crystal Nanocavities

We study the optical emission from single semiconductor quantum dots coupled to the optical modes of photonic crystal nanocavities. For dots that are both spectrally and spatially coupled, auto-correlation measurements reveal efficient single photon generation, with a drastically reduced lifetime due to the Purcell-effect. However, the multi-photon emission probability is enhanced compared to the same QD transition when it is detuned from the cavity mode by controlled $N_2$-deposition. This indicates the presence of an emission background that is shown to be related to the dot using photon cross-correlation spectroscopy. Photon temporal correlations persist even for large spectral detunings beyond $Δλ\sim-10 nm$, excluding the intrinsic QD continuum and phonon mediated processes as being responsible for the cavity mode emission background. We propose a mechanism based on photon induced shake up processes in the charged quantum dots, enhanced by the optical cavity.

cond-mat.mes-hall↗

arXiv2007

Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

A doping series of AlAs (001) quantum wells with Si delta-modulation doping on both sides reveals different dark and post-illumination saturation densities, as well as temperature dependent photoconductivity. The lower dark two-dimensional electron density saturation is explained assuming deep binding energy of Delta_DK = 65.2 meV for Si-donors in the dark. Persistent photoconductivity (PPC) is observed upon illumination, with higher saturation density indicating shallow post-illumination donor binding energy. The photoconductivity is thermally activated, with 4 K illumination requiring post-illumination annealing to T = 30 K to saturate the PPC. Dark and post-illumination doping efficiencies are reported.

cond-mat.mes-hall↗

arXiv2007

Highly efficient single photon emission from single quantum dots within a two-dimensional photonic bandgap

We report highly efficient single photon generation from InGaAs self-assembled quantum dots emitting within a two-dimensional photonic bandgap. A strongly suppressed multiphoton probability is obtained for single quantum dots in bulk GaAs and those emitting into the photonic bandgap. In the latter case, photoluminescence saturation spectroscopy is employed to measure a ~17 times enhancement of the average photon extraction efficiency, when compared to quantum dots in bulk GaAs. For quantum dots in the photonic crystal we measure directly an external quantum efficiency up to 26%, much higher than for quantum dots on the same sample without a tailored photonic environment. The results show that highly efficient quantum dot single photon sources can be realized, without the need for complex nanopositioning techniques.

cond-mat.mtrl-sci↗

arXiv2007

Efficient Spatial Redistribution of Quantum Dot Spontaneous Emission from 2D Photonic Crystals

We investigate the modification of the spontaneous emission dynamics and external quantum efficiency for self-assembled InGaAs quantum dots coupled to extended and localised photonic states in GaAs 2D-photonic crystals. The 2D-photonic bandgap is shown to give rise to a 5-10 times enhancement of the external quantum efficiency whilst the spontaneous emission rate is simultaneously reduced by a comparable factor. Our findings are quantitatively explained by a modal redistribution of spontaneous emission due to the modified local density of photonic states. The results suggest that quantum dots embedded within 2D-photonic crystals are suitable for practical single photon sources with high external efficiency.

cond-mat.mtrl-sci↗

arXiv2007

Novel metallic and insulating states at a bent quantum Hall junction

A non-planar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall (QH) systems are joined at a sharp right angle. When both facets are at equal filling factor nu the junction hosts a channel with non-quantized conductance, dependent on nu. The state is metallic at nu = 1/3, with conductance along the junction increasing as the temperature T drops. At nu = 1, 2 it is strongly insulating, and at nu = 3, 4 shows only weak T dependence. Upon applying a dc voltage bias along the junction, the differential conductance again shows three different behaviors. Hartree calculations of the dispersion at the junction illustrate possible explanations, and differences from planar QH structures are highlighted.

cond-mat.mes-hall↗

arXiv2006

Optically Probing Spin and Charge Interactions in an Tunable Artificial Molecule

We optically probe and electrically control a single artificial molecule containing a well defined number of electrons. Charge and spin dependent inter-dot quantum couplings are probed optically by adding a single electron-hole pair and detecting the emission from negatively charged exciton states. Coulomb and Pauli blockade effects are directly observed and hybridization and electrostatic charging energies are independently measured. The inter-dot quantum coupling is confirmed to be mediated predominantly by electron tunneling. Our results are in excellent accord with calculations that provide a complete picture of negative excitons and few electron states in quantum dot molecules.

cond-mat.mes-hall↗

arXiv2006

Direct observation of acoustic phonon mediated relaxation between coupled exciton states in a single quantum dot molecule

We probe acoustic phonon mediated relaxation between tunnel coupled exciton states in an individual quantum dot molecule in which the inter-dot quantum coupling and energy separation between exciton states is continuously tuned using static electric field. Time resolved and temperature dependent optical spectroscopy are used to probe inter-level relaxation around the point of maximum coupling. The radiative lifetimes of the coupled excitonic states can be tuned from ~2 ns to ~10 ns as the spatially direct and indirect character of the wavefunction is varied by detuning from resonance. Acoustic phonon mediated inter-level relaxation is shown to proceed over timescales comparable to the direct exciton radiative lifetime, indicative of a relaxation bottleneck for level spacings in the range $ΔE\$ ~3-6 meV.

cond-mat.mes-hall↗

arXiv2006

Vertical quantum wire realized with double cleaved-edge overgrowth

A quantum wire is fabricated on (001)-GaAs at the intersection of two overgrown cleaves. The wire is contacted at each end to n+ GaAs layers via two-dimensional (2D) leads. A sidegate controls the density of the wire revealing conductance quantization. The step height is strongly reduced from 2e^2/h due to the 2D-lead series resistance. We characterize the 2D density and mobility for both cleave facets with four-point measurements. The density on the first facet is modulated by the substrate potential, depleting a 2um wide strip that defines the wire length. Micro-photoluminescence shows an extra peak consistent with 1D electron states at the corner.

cond-mat.mes-hall↗

arXiv2006

Classical-to-stochastic Coulomb blockade cross-over in aluminum arsenide wires

We report low-temperature differential conductance measurements in aluminum arsenide cleaved-edge overgrown quantum wires in the pinch-off regime. At zero source-drain bias we observe Coulomb blockade conductance resonances that become vanishingly small as the temperature is lowered below $250 {\rm mK}$. We show that this behavior can be interpreted as a classical-to-stochastic Coulomb blockade cross-over in a series of asymmetric quantum dots, and offer a quantitative analysis of the temperature-dependence of the resonances lineshape. The conductance behavior at large source-drain bias is suggestive of the charge density wave conduction expected for a chain of quantum dots.

cond-mat.mes-hall↗