arXiv subjects

M. D. Stewart Jr

Publications and source records attributed to M. D. Stewart Jr.

4 recordsLinked to original sources

arXiv2024

Statistical study and parallelisation of multiplexed single-electron sources

Increasing electric current from a single-electron source is a main challenge in an effort to establish the standard of the ampere defined by the fixed value of the elementary charge $e$ and operation frequency $f$. While the current scales with $f$, due to an operation frequency limit for maintaining accurate single-electron transfer, parallelisation of singleelectron sources is expected to be a more practical solution to increase the generated electric current $I = Nef$, where $N$ is a number of parallelised devices. One way to parallelise single-electron sources without increasing the complexity in device operation is to use a common gate. Such a scheme will require each device to have the same operation parameters for single-electron transfer. In order to investigate this possibility, we study the statistics for operation gate voltages using single-electron sources embedded in a multiplexer circuit. The multiplexer circuit allows us to measure 64 single-electron sources individually in a single cooldown. We also demonstrate the parallelisation of three single-electron sources and observe the generated current enhanced by a factor of three.

cond-mat.mes-hall↗

arXiv2018

Effect of device design on charge offset drift in Si/SiO$_2$ single electron devices

We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less charge offset drift, exhibiting fewer isolated jumps and a factor of two reduction in fluctuations about a stable mean value. The observed reduction can be accounted for by the electrostatic reduction in the mutual capacitance $C_m$ between defects and the quantum dot, and increase in the total defect capacitance $C_d$ due to the top gate. These results depart from the accepted understanding that the level of charge offset drift in SEDs is determined by the intrinsic material properties, forcing consideration of the device design as well. We expect these results to be of importance in developing SEDs for applications from quantum information to metrology or wherever charge noise or integrability of devices is a challenge.

physics.app-ph↗

arXiv2007

Field Tuned Superconductor to Insulator Transitions in an Amorphous Film with an Imposed Multiply Connected Geometry

We have observed multiple magnetic field driven superconductor to insulator transitions (SIT) in amorphous Bi films perforated with a nano-honeycomb (NHC) array of holes. The period of the magneto-resistance, H=H_M=h/2eS where S is the area of a unit cell of holes, indicates the field driven transitions are boson dominated. The field-dependent resistance follows R(T)=R_0(H)exp(T_0(H)/T) on both sides of the transition so that the evolution between these states is controlled by the vanishing of T_0 to0. We compare our results to the thickness driven transition in NHC films and the field driven transitions in unpatterned Bi films, other materials, and Josephson junction arrays. Our results suggest a structural source for similar behavior found in some materials and that despite the clear bosonic nature of the SITs, quasiparticle degrees of freedom likely also play an important part in the evolution of the SIT.

cond-mat.supr-con↗

arXiv2006

"Super weakly" coupled superconductivity in ultrathin superconductor-normal-metal bilayers

Tunneling measurements of the temperature dependence of the electronic density of states (DOS) of ultrathin bilayers of Pb and Ag reveal that their superconducting energy gap, $Δ(T)$, evolves similarly to BCS predictions despite the presence of a large anomalous DOS at the Fermi energy that persists as $T\to 0$. The gap ratio, ${2Δ(0)}\over {k_BT_c}$, systematically decreases more than 20% below the BCS universal value of 3.52 in bilayers with the lowest superconducting transition temperatures, $T_c$; a behavior we deem super weakly coupled. A semi-quantitative model suggests that the reduced gap ratios result from a systematic depletion of the DOS available for pairing that occurs with the growth of the anomalous DOS at the Fermi energy.

cond-mat.supr-con↗