arXiv subjects

M. Dawber

Publications and source records attributed to M. Dawber.

11 recordsLinked to original sources

arXiv2020

Domain alignment within ferroelectric/dielectric PbTiO$_3$/SrTiO$_3$ superlattice nanostructures

The ferroelectric domain pattern within lithographically defined PbTiO3/SrTiO3 ferroelectric/dielectric heteroepitaxial superlattice nanostructures is strongly influenced by the edges of the structures. Synchrotron x-ray nanobeam diffraction reveals that the spontaneously formed 180° ferroelectric stripe domains exhibited by such superlattices adopt a configuration in rectangular nanostructures in which domain walls are aligned with long patterned edges. The angular distribution of x-ray diffuse scattering intensity from nanodomains indicates that domains are aligned within an angular range of approximately 20° with respect to the edges. Computational studies based on a time-dependent Landau-Ginzburg-Devonshire model show that the preferred direction of the alignment results from lowering of the bulk and electrostrictive contributions to the free energy of the system due to the release of the lateral mechanical constraint. This unexpected alignment appears to be intrinsic and not a result of distortions or defects caused by the patterning process. Our work demonstrates how nanostructuring and patterning of heteroepitaxial superlattices allow for pathways to create and control ferroelectric structures that may appear counterintuitive.

cond-mat.mes-hall↗

arXiv2012

Engineering polarization rotation in a ferroelectric superlattice

A key property that drives research in ferroelectric perovskite oxides is their strong piezoelectric response in which an electric field is induced by an applied strain, and vice-versa for the converse piezoelectric effect. We have achieved an experimental enhancement of the piezoelectric response and dielectric tunability in artificially layered epitaxial PbTiO$_{3}$/CaTiO$_{3}$ superlattices through an engineered rotation of the polarization direction. As the relative layer thicknesses within the superlattice were changed from sample to sample we found evidence for polarization rotation in multiple x-ray diffraction measurements. Associated changes in functional properties were seen in electrical measurements and piezoforce microscopy. The results demonstrate a new approach to inducing polarization rotation under ambient conditions in an artificially layered thin film.

cond-mat.mtrl-sci↗

arXiv2012

Ferroelectric PbTiO$_{3}$/SrRuO$_{3}$ superlattices with broken inversion symmetry

We have fabricated PbTiO$_{3}$/SrRuO$_{3}$ superlattices with ultra-thin SrRuO$_{3}$ layers. Due to the superlattice geometry, the samples show a large anisotropy in their electrical resistivity, which can be controlled by changing the thickness of the PbTiO$_{3}$ layers. Therefore, along the ferroelectric direction, SrRuO$_{3}$ layers can act as dielectric, rather than metallic, elements. We show that, by reducing the concentration of PbTiO$_{3}$, an increasingly important effect of polarization asymmetry due to compositional inversion symmetry breaking occurs. The results are significant as they represent a new class of ferroelectric superlattices, with a rich and complex phase diagram. By expanding our set of materials we are able to introduce new behaviors that can only occur when one of the materials is not a perovskite titanate. Here, compositional inversion symmetry breaking in bi-color superlattices, due to the combined variation of A and B site ions within the superlattice, is demonstrated using a combination of experimental measurements and first principles density functional theory.

cond-mat.mtrl-sci↗

arXiv2005

Combining half-metals and multiferroics into epitaxial heterostructures for spintronics

We report on the growth of epitaxial bilayers of the La2/3Sr1/3MnO3 (LSMO) half-metallic ferromagnet and the BiFeO3 (BFO) multiferroic, on SrTiO3(001) by pulsed laser deposition. The growth mode of both layers is two-dimensional, which results in unit-cell smooth surfaces. We show that both materials keep their properties inside the heterostructures, i.e. the LSMO layer (11 nm thick) is ferromagnetic with a Curie temperature of ~330K, while the BFO films shows ferroelectricity down to very low thicknesses (5 nm). Conductive-tip atomic force microscope mappings of BFO/LSMO bilayers for different BFO thicknesses reveal a high and homogeneous resistive state for the BFO film that can thus be used as a ferroelectric tunnel barrier in tunnel junctions based on a half-metal.

cond-mat.mtrl-sci↗

arXiv2005

Unusual behaviour of the ferroelectric polarization in PbTiO$_{3}$/SrTiO$_{3}$ superlattices

Artificial PbTiO$_{3}$/SrTiO$_{3}$ superlattices were constructed using off-axis RF magnetron sputtering. X-ray diffraction and piezoelectric atomic force microscopy were used to study the evolution of the ferroelectric polarization as the ratio of PbTiO$_{3}$ to SrTiO$_{3}$ was changed. For PbTiO$_{3}$ layer thicknesses larger than the 3-unit cells SrTiO$_{3}$ thickness used in the structure, the polarization is found to be reduced as the PbTiO$_{3}$ thickness is decreased. This observation confirms the primary role of the depolarization field in the polarization reduction in thin films. For the samples with ratios of PbTiO$_{3}$ to SrTiO$_{3}$ of less than one a surprising recovery of ferroelectricity that cannot be explained by electrostatic considerations was observed.

cond-mat.mtrl-sci↗

arXiv2005

Physics of thin-film ferroelectric oxides

This review covers the important advances in recent years in the physics of thin film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin film form. We introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this we cover the enormous progress that has been made in the first principles computational approach to understanding ferroelectrics. We then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, we look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in non conventional nanoscale geometries.

cond-mat.mtrl-sci↗

arXiv2004

Negative Differential Resistivity and Positive Temperature Coefficient of Resistivity effect in the diffusion limited current of ferroelectric thin film capacitors

We present a model for the leakage current in ferroelectric thin- film capacitors which explains two of the observed phenomena that have escaped satisfactory explanation, i.e. the occurrence of either a plateau or negative differential resistivity at low voltages, and the observation of a Positive Temperature Coefficient of Resistivity (PTCR) effect in certain samples in the high-voltage regime. The leakage current is modelled by considering a diffusion-limited current process, which in the high-voltage regime recovers the diffusion-limited Schottky relationship of Simmons already shown to be applicable in these systems.

cond-mat.mtrl-sci↗

arXiv2003

Scaling of the Coercive Field with Thickness in Thin-Film Ferroelectrics

Motivated by the observed thickness-scaling of the coercive field in ferroelectric films over five decades, we develop a statistical approach towards understanding the conceptual underpinnings of this behavior. Here the scaling exponent is determined by the field-dependence of a known and measured quantity, the nucleation rate per unit area. We end with a discussion of our initial assumptions and point to instances where they could no longer be applicable.

cond-mat.mtrl-sci↗

arXiv2003

Orientation Dependence of Ferroelectric Properties of Pulsed-Laser-Ablated Bi4-xNdxTi3O12 Films

Epitaxial (001)-, (118)-, and (104)-oriented Nd-doped Bi4Ti3O12 films have been grown by pulsed-laser deposition from a Bi4-xNdxTi3O12 (x=0.85) target on SrRuO3 coated single-crystal (100)-, (110)-, and (111)-oriented SrTiO3 substrates, respectively. X-ray diffraction illustrated a unique epitaxial relationship between film and substrate for all orientations. We observed a strong dependence of ferroelectric properties on the film orientation, with no ferroelectric activity in an (001)-oriented film; a remanent polarization, 2Pr, of 12 microC/cm2 and coercive field, Ec, of 120 kV/cm in a (118)-oriented film; and 2Pr = 40 microC/cm2, Ec = 50 kV/cm in a (104)-oriented film. The lack of ferroelectric activity along the c-axis is consistent with the orthorhombic nature of the crystal structure of the bulk material, as determined by powder neutron diffraction.

cond-mat.mtrl-sci↗

arXiv2002

Reply to cond-mat/0211660: Comments on "A model for fatigue in ferroelectric perovskite thin films" published in Appl. Phys. Lett, 76, 1060 (2000); addendum, ibid. p.3655

This is a reply to cond-mat/0211660 by A.K. Taganstev, which consists of a set of criticisms of our publications on polarisation fatigue in Applied Physics Letters. Although his comments were rejected by Applied Physics Letters more than two years ago, Dr Tagantsev has published them in this archive on 29/11/2002. We reply to each of his criticisms here.

cond-mat.mtrl-sci↗

arXiv2002

Thickness-Dependence of the Coercive Field in Ferroelectrics

For forty years researchers on ferroelectric switching have used the Kay-Dunn theory to model the thickness-dependence of the coercive field; it works surprisingly well, despite the fact that it is based upon homogeneous nucleation and a small-field expansion, neither of which is realized in thin films. Here we demonstrate that this result can be obtained from a more general Kolmogorov-Avrami model of (inhomogeneous) nucleation and growth. By including a correction to the switching field across the dielectric that includes Thomas-Fermi screening in the metal electrode, we show that our theory quantitatively describes the coercive fields versus thickness in several different families of ferroelectric (lead zirconate-titanate [PZT], potassium nitrate, and polyvinylidenefluoride [PVDF]) over a wide range of thickness (5 decades). This agreement is particularly satisfying in the case of PVDF, as it indicates that the switching kinetics are domain-wall limited down to 1 nanometer and thus require no new effects.

cond-mat.mtrl-sci↗