arXiv subjects

M. Fanciulli

Publications and source records attributed to M. Fanciulli.

At least 19 recordsLinked to original sources

arXiv2025

Atomic-scale Origin of Interfacial Dzyaloshinskii--Moriya Interaction in Pt/Fe/Au

Recent results show remarkable interfacial--Dzyaloshinskii--Moriya interaction (i-DMI) in magnetic heterostructures composed of relatively thick Fe thin films ($\gg 1$ nm). To investigate its origin, we present a thorough magnetic characterization of the SiO$_2$/${}^{57}\mathrm{Fe}$($t$)/Au and SiO$_2$/Pt/${}^{57}\mathrm{Fe}$($t$)/Au heterostructures ($t = 1.6$ - $2.2$ nm). An i-DMI constant of $D_s^{\mathrm{Pt}} = 0.43\,\mathrm{mJ\,m^{-2}}$ is extracted for the Pt/Fe/Au system, as probed by wavevector-resolved Brillouin light scattering spectroscopy. Ferromagnetic resonance and conversion electron M\"ossbauer spectroscopy indicate that significant surface anisotropy is present in Pt/Fe/Au, and that an interfacial Fe fraction ($\sim18$) exhibits tilted magnetization ($\sim25^\circ$ out of plane) and an enhanced hyperfine field, correlating with the stronger i-DMI.

cond-mat.mtrl-sci↗

arXiv2023

High-resolution ptychographic imaging at a seeded free-electron laser source using OAM beams

Electromagnetic waves possessing orbital angular momentum (OAM) are powerful tools for applications in optical communications, new quantum technologies and optical tweezers. Recently, they have attracted growing interest since they can be harnessed to detect peculiar helical dichroic effects in chiral molecular media and in magnetic nanostructures. In this work, we perform single-shot per position ptychography on a nanostructured object at a seeded free-electron laser, using extreme ultraviolet OAM beams of different topological charge order $\ell$ generated with spiral zone plates. By controlling $\ell$, we demonstrate how the structural features of OAM beam profile determine an improvement of about 30% in image resolution with respect to conventional Gaussian beam illumination. This result extends the capabilities of coherent diffraction imaging techniques, and paves the way for achieving time-resolved high-resolution (below 100 nm) microscopy on large area samples.

physics.optics↗

arXiv2023

Giant spin-charge conversion in ultrathin films of the MnPtSb half-Heusler compound

Half-metallic half-Heusler compounds with strong spin-orbit-coupling and broken inversion symmetry in their crystal structure are promising materials for generating and absorbing spin-currents, thus enabling the electric manipulation of magnetization in energy-efficient spintronic devices. In this work, we report the spin-to-charge conversion in sputtered ultrathin films of the half-Heusler compound MnPtSb with thickness (t) in the range from 1 to 6 nm. A combination of X-ray and transmission electron microscopy measurements evidence the epitaxial nature of these ultrathin non-centrosymmetric MnPtSb films, with a clear (111)-orientation obtained on top of (0001) single-crystal sapphire substrates. The study of the thickness (t)-dependent magnetization dynamics of the MnPtSb(t)/Co(5nm)/Au(5nm) heterostructure revealed that the MnPtSb compound can be used as an efficient spin current generator, even at film thicknesses as low as 1 nm. By making use of spin pumping FMR, we measure a remarkable t-dependent spin-charge conversion in the MnPtSb layers, which clearly demonstrate the interfacial origin of the conversion. When interpreted as arising from the inverse Edelstein effect (IEE), the spin-charge conversion efficiency extracted at room temperature for the thinnest MnPtSb layer reaches {\lambda}IEE~3 nm, representing an extremely high spin-charge conversion efficiency at room temperature. The still never explored ultrathin regime of the MnPtSb films studied in this work and the discover of their outstanding functionality are two ingredients which demonstrate the potentiality of such materials for future applications in spintronics.

cond-mat.mtrl-sci↗

arXiv2023

Exploiting the close-to-Dirac point shift of Fermi level in Sb2Te3/Bi2Te3 topological insulator heterostructure for spin-charge conversion

Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here we report the full in situ Metal Organic Chemical Vapor Deposition (MOCVD) and study of a highly crystalline Bi2Te3/Sb2Te3 topological insulator heterostructure on top of large area (4'') Si(111) substrates. The bottom Sb2Te3 layer serves as an ideal seed layer for the growth of highly crystalline Bi2Te3 on top, also inducing a remarkable shift of the Fermi level to place it very close to the Dirac point, as visualized by angle-resolved photoemission spectroscopy. In order to exploit such ideal topologically-protected surface states, we fabricate the simple spin-charge converter Si(111)/Sb2Te3/Bi2Te3/Au/Co/Au and spin-charge conversion (SCC) is probed by spin pumping ferromagnetic resonance. A large SCC is measured at room temperature, which is interpreted within the inverse Edelstein effect (IEE), thus resulting in a conversion efficiency lambda_IEE of 0.44 nm. Our results demonstrate the successful tuning of the surface Fermi level of Bi2Te3 when grown on top of Sb2Te3 with a full in situ MOCVD process, which is highly interesting in view of its future technology transfer.

cond-mat.mtrl-sci↗

arXiv2020

Photoemission study on pristine and Ni-doped SrTiO$_{3}$ thin films

We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high quality ordered pristine and SrTiO3:Ni$_{x}$ films with x=0.06 and 0.12 were prepared by pulsed laser deposition. Electronic band structure calculations for the ground state, as well as one-step model photoemission calculations, which were obtained by means of the Korringa-Khon-Rostoker Greens's function method, predicted the formation of localised $3d$-impurity bands in the band gap of SrTiO$_{3}$ close to the valence band maxima. The measured valence bands at the resonance Ni2p excitation and band dispersion confirm these findings.

cond-mat.mtrl-sci↗

arXiv2020

Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO$_2$ interface

The main feature of amorphous materials is the presence of excess vibrational modes at low energies, giving rise to the so called "boson peak" in neutron and optical spectroscopy. These same modes manifest themselves as two level systems (TLSs) causing noise and decoherence in qubits and other sensitive devices. Here we present an experiment that uses the spin relaxation of dangling bonds at the Si/(amorphous)SiO$_2$ interface as a probe of TLSs. We introduce a model that is able to explain the observed non-exponential electron spin inversion recovery and provides a measure of the degree of spatial localization and concentration of the TLSs close to the interface, their maximum energy and its temperature dependence.

cond-mat.mes-hall↗

arXiv2019

Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots

We study theoretically the phonon-induced relaxation and decoherence processes in the hybrid qubit in silicon. Hybrid qubit behaves as a charge qubit when the detuning is close to zero and as spin qubit for large detuning values. It is realized starting from an electrostatically defined double quantum dot where three electrons are confined and manipulated through only electrical tuning. By employing a three-level effective model for the qubit and describing the environment bath as a series of harmonic oscillators in the thermal equilibrium states, we extract the relaxation and decoherence times as a function of the bath spectral density and of the bath temperature using the Bloch-Redfield theory. For Si quantum dots the energy dispersion is strongly affected by the physics of the valley, i.e. the conduction band minima, so we also included the contribution of the valley excitations in our analysis. Our results offer fundamental information on the system decoherence properties when the unavoidable interaction with the environment is included and temperature effects are considered.

quant-ph↗

arXiv2018

Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises

A comparison of gate fidelities between different spin qubit types defined in quantum dots and a donor under different control errors is reported. We studied five qubit types, namely the quantum dot spin qubit, the double quantum dot singlet-triplet qubit, the double quantum dot hybrid qubit, the donor qubit and the quantum dot spin-donor qubit. For each one, we derived analytical time sequences that realize single qubit rotations along the principal axis of the Bloch sphere. We estimated the effects of control errors on the gate fidelity by using a Gaussian noise model. Then we compared the gate fidelities among qubit implementations due to pulse timing errors by using a realistic set of values for the error parameters of control amplitudes.

quant-ph↗

arXiv2018

Coherence time analysis in semiconducting hybrid qubit under realistic experimental conditions

The unavoidable effect of the environmental noise due to nuclear spins and charge traps is included in the study of the hybrid qubit dynamics. Hybrid qubit dues its name to the advantageous combination of manipulation speed of a charge qubit with the longevity of a spin qubit. It consists of three electrons confined through external gate voltages in a double quantum dot and deserves special interest in quantum computation applications due to its advantages in terms of fabrication, control and only electrical manipulation. Hybrid qubit is protected against global magnetic fluctuations since it is a decoherence-free subspace qubit. It is only affected by local fluctuations, such as the Overhauser field, in addition to charge fluctuations on the electrostatic gates. In the configuration studied, the control parameters, that are the gate voltages, are always turned on. Coherence time of the hybrid qubit is extracted when model parameters take values achievable experimentally in the nuclear free isotope $^{28}$Si, natural Si and GaAs hosts.

quant-ph↗

arXiv2018

Semiconducting double-dot exchange-only qubit dynamics in presence of magnetic and charge noises

The effects of magnetic and charge noises on the dynamical evolution of the double-dot exchange-only qubit (DEOQ) is theoretically investigated. The DEOQ consisting of three electrons arranged in an electrostatically defined double quantum dot deserves special interest in quantum computation applications due to its advantages in terms of fabrication, control and manipulation in view of implementation of fast single and two qubit operations through only electrical tuning. The presence of the environmental noise due to nuclear spins and charge traps, in addition to fluctuations in the applied magnetic field and charge fluctuations on the electrostatic gates adopted to confine the electrons, is taken into account including random magnetic field and random coupling terms in the Hamiltonian. The behavior of the return probability as a function of time for initial conditions of interest is presented. Moreover, through an envelope-fitting procedure on the return probabilities, coherence times are extracted when model parameters take values achievable experimentally in semiconducting devices.

quant-ph↗

arXiv2017

Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment

Explicit controlled-NOT gate sequences between two qubits of different types are presented in view of applications for large-scale quantum computation. Here, the building blocks for such composite systems are qubits based on the electrostatically confined electronic spin in semiconductor quantum dots. For each system the effective Hamiltonian models expressed by only exchange interactions between pair of electrons are exploited in two different geometrical configurations. A numerical genetic algorithm that takes into account the realistic physical parameters involved is adopted. Gate operations are addressed by modulating the tunneling barriers and the energy offsets between different couple of quantum dots. Gate infidelities are calculated considering limitations due to unideal control of gate sequence pulses, hyperfine interaction and charge noise.

quant-ph↗

arXiv2017

Spin-resolved electronic structure of ferroelectric α-GeTe and multiferroic Ge1-xMnxTe

Germanium telluride features special spin-electric effects originating from spin-orbit coupling and symmetry breaking by the ferroelectric lattice polarization, which opens up many prospectives for electrically tunable and switchable spin electronic devices. By Mn doping of the α-GeTe host lattice, the system becomes a multiferroic semiconductor possessing magnetoelectric properties in which the electric polarization, magnetization and spin texture are coupled to each other. Employing spin- and angle-resolved photoemission spectroscopy in bulk- and surface-sensitive energy ranges and by varying dipole transition matrix elements, we disentangle the bulk, surface and surface-resonance states of the electronic structure and determine the spin textures for selected parameters. From our results, we derive a comprehensive model of the α-GeTe surface electronic structure which fits experimental data and first principle theoretical predictions and we discuss the unconventional evolution of the Rashba-type spin splitting upon manipulation by external B- and E-fields.

cond-mat.mtrl-sci↗

arXiv2017

Operando imaging of all-electric spin texture manipulation in ferroelectric and multiferroic Rashba semiconductors

The control of the electron spin by external means is a key issue for spintronic devices. Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectric GeTe and multiferroic Ge1-xMnxTe. We not only demonstrate for the first time electrostatic spin manipulation in Rashba semiconductors due to ferroelectric polarization reversal, but are also able to follow the switching pathway in detail, and show a gain of the Rashba-splitting strength under external fields. In multiferroic Ge1-xMnxTe operando SARPES reveals switching of the perpendicular spin component due to electric field induced magnetization reversal. This provides firm evidence of effective multiferroic coupling which opens up magnetoelectric functionality with a multitude of spin-switching paths in which the magnetic and electric order parameters are coupled through ferroelastic relaxation paths. This work thus provides a new type of magnetoelectric switching entangled with Rashba-Zeeman splitting in a multiferroic system.

cond-mat.mtrl-sci↗

arXiv2017

Universal response of the type-II Weyl semimetals phase diagram

The discovery of Weyl semimetals represents a significant advance in topological band theory. They paradigmatically enlarged the classification of topological materials to gapless systems while simultaneously providing experimental evidence for the long-sought Weyl fermions. Beyond fundamental relevance, their high mobility, strong magnetoresistance, and the possible existence of even more exotic effects, such as the chiral anomaly, make Weyl semimetals a promising platform to develop radically new technology. Fully exploiting their potential requires going beyond the mere identification of materials and calls for a detailed characterization of their functional response, which is severely complicated by the coexistence of surface- and bulk-derived topologically protected quasiparticles, i.e., Fermi arcs and Weyl points, respectively. Here, we focus on the type-II Weyl semimetal class where we find a stoichiometry-dependent phase transition from a trivial to a non-trivial regime. By exploring the two extreme cases of the phase diagram, we demonstrate the existence of a universal response of both surface and bulk states to perturbations. We show that quasi-particle interference patterns originate from scattering events among surface arcs. Analysis reveals that topologically non-trivial contributions are strongly suppressed by spin texture. We also show that scattering at localized impurities generate defect-induced quasiparticles sitting close to the Weyl point energy. These give rise to strong peaks in the local density of states, which lift the Weyl node significantly altering the pristine low-energy Weyl spectrum. Visualizing the microscopic response to scattering has important consequences for understanding the unusual transport properties of this class of materials. Overall, our observations provide a unifying picture of the Weyl phase diagram.

cond-mat.mes-hall↗

arXiv2017

Selective probing of hidden spin-polarized states in inversion-symmetric bulk MoS2

Spin- and angle-resolved photoemission spectroscopy is used to reveal that a large spin polarization is observable in the bulk centrosymmetric transition metal dichalcogenide MoS2. It is found that the measured spin polarization can be reversed by changing the handedness of incident circularly-polarized light. Calculations based on a three-step model of photoemission show that the valley and layer-locked spin-polarized electronic states can be selectively addressed by circularly-polarized light, therefore providing a novel route to probe these hidden spin-polarized states in inversion-symmetric systems as predicted by Zhang et al. [Nature Physics 10, 387 (2014)].

cond-mat.mtrl-sci↗

arXiv2016

Entanglement and manipulation of the magnetic and spin-orbit order in multiferroic Rashba semiconductors

The interplay between electronic eigenstates, spin, and orbital degrees of freedom, combined with fundamental breaking of symmetries is currently one of the most exciting fields of research. Multiferroics such as (GeMn)Te fulfill these requirements providing unusual physical properties due to the coexistence and coupling between ferromagnetic and ferroelectric order in one and the same system. Here we show that multiferroic (GeMn)Te inherits from its parent ferroelectric α-GeTe compound a giant Rashba splitting of three-dimensional bulk states which competes with the Zeeman spin splitting induced by the magnetic exchange interactions. The collinear alignment of ferroelectric and ferromagnetic polarization leads to an opening of a tunable Zeeman gap of up to 100 meV around the Dirac point of the Rashba bands, coupled with a change in spin texture by entanglement of magnetic and spin-orbit order. Through applications of magnetic fields, we demonstrate manipulation of spin- texture by spin resolved photoemission experiments, which is also expected for electric fields based on the multiferroic coupling. The control of spin helicity of the bands and its locking to ferromagnetic and ferroelectric order opens fascinating new avenues for highly multifunctional multiferroic Rashba devices suited for reprogrammable logic and/or nonvolatile memory applications.

cond-mat.mtrl-sci↗

arXiv2015

Valley blockade and multielectron spin-valley Kondo effect in silicon

We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunnelling processes, and consistently with those allowed by the valley blockade regime, the manifestation of Kondo effect obeys to the periodicity 4 of the electron filling sequence typical of silicon emerging at occupation N=1, 2, 3. The spin-valley Kondo effect emerges under different kinds of screening depending on the electron filling. By exploiting the valley blockade regime, valley index conservation in the Kondo SU(4) is deduced without the employment of an external magnetic field. Microwave irradiation suppresses the Kondo effect at occupancies up to three electrons.

cond-mat.mes-hall↗

arXiv2015

Coherent Tunneling by Adiabatic Passage of an exchange-only spin qubit in a double quantum dot chain

A scheme based on Coherent Tunneling by Adiabatic Passage (CTAP) of exchange-only spin qubit quantum states in a linearly arranged double quantum dot chain is demonstrated. Logical states for the qubit are defined by adopting the spin state of three electrons confined in a double quantum dot. The possibility to obtain gate operations entirely with electrical manipulations makes this qubit a valuable architecture in the field of quantum computing for the implementation of quantum algorithms. The effect of the external control parameters as well as the effect of the dephasing on the coherent tunneling in the chain is studied. During adiabatic transport, within a constant energy degenerate eigenspace, the states in the double quantum dots internal to the chain are not populated, while transient populations of the mixed states in the external ones are predicted.

quant-ph↗