arXiv subjects

M. Fanciulli

Publications and source records attributed to M. Fanciulli.

23 records · Page 2Linked to original sources

arXiv2015

Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations

Double-dot exchange-only qubit represents a promising compromise between high speed and simple fabrication in solid-state implementations. A couple of interacting double-dot exchange-only qubits, each composed by three electrons distributed in a double quantum dot, is exploited to realize controlled-NOT (CNOT) operations. The effective Hamiltonian model of the composite system is expressed by only exchange interactions between pairs of spins. Consequently, the evolution operator has a simple form and represents the starting point for the research of sequences of operations that realize CNOT gates. Two different geometrical configurations of the pair are considered, and a numerical mixed simplex and genetic algorithm is used. We compare the nonphysical case in which all the interactions are controllable from the external and the realistic condition in which intra-dot interactions are fixed by the geometry of the system. In the latter case, we find the CNOT sequences for both the geometrical configurations and we considered a qubit system where electrons are electrostatically confined in two quantum dots in a silicon nanowire. The effects of the geometrical sizes of the nanowire and of the gates on the fundamental parameters controlling the qubit are studied by exploiting a spin-density-functional theory-based simulator. Consequently, CNOT gate performances are evaluated.

quant-ph↗

arXiv2013

Effective Hamiltonian for the hybrid double quantum dot qubit

Quantum dot hybrid qubits formed from three electrons in double quantum dots represent a promising compromise between high speed and simple fabrication for solid state implementations of single qubit and two qubits quantum logic ports. We derive the Schrieffer-Wolff effective Hamiltonian that describes in a simple and intuitive way the qubit by combining a Hubbard-like model with a projector operator method. As a result, the Hubbard-like Hamiltonian is transformed in an equivalent expression in terms of the exchange coupling interactions between pairs of electrons. The effective Hamiltonian is exploited to derive the dynamical behaviour of the system and its eigenstates on the Bloch sphere to generate qubits operation for quantum logic ports. A realistic implementation in silicon and the coupling of the qubit with a detector are discussed.

quant-ph↗

arXiv2013

Getting through the nature of silicene: sp2-sp3 two-dimensional silicon nanosheet

By combining experimental techniques with ab-initio density functional theory calculations, we describe the Si/Ag(111) two-dimensional system in terms of a sp2-sp3 crystalline form of silicon characterized by a vertically distorted honeycomb lattice. We show that 2D sp2-sp3 Si NSs are qualified by a prevailing Raman peak which can be assigned to a graphene-like E2g vibrational mode and that highly distorted superstructures are semiconductive whereas low distorted ones behave as semimetals.

cond-mat.mes-hall↗

arXiv2012

Charge dynamics of a single donor coupled to a few electrons quantum dot in silicon

We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field effect transistor) biased near threshold in the SET regime with two side gates to control both the device conductance and the donor charge. Temperature and magnetic field independent tunneling time is measured. We measure the statistics of the transfer of electrons observed when the ground state D0 of the donor is aligned with the SET states.

cond-mat.mes-hall↗

arXiv2005

Electron spin echo relaxation and envelope modulation of phosphorus shallow donors in silicon

Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon, since quantum computation can be realized through the manipulation of electron and/or nuclear spins. We here report on two-pulse electron spin echo experiments on phosphorus shallow donors in natural and 28Si-enriched silicon epilayers doped with 10^16 cm-3 P donors. The experiments address the spin-spin relaxation times and mechanisms and provide, through the electron spin echo envelope modulation (ESEEM) effect, information on the donor electron wave function. Experiments performed as a function of the pulse turning angle allowed us to measure the exponential relaxation and spectral diffusion times depurated by instantaneous diffusion. According to these results, isotopically purified samples are necessary to reduce the spectral diffusion contribution and the P shallow donors concentration plays a fundamental role in determining the intrinsic phase memory time. ESEEM peaks have been assigned to hyperfine-coupled silicon-29 nuclei at specific crystallographic positions on the basis of a spectral fit procedure including instrumental distortions.

cond-mat.mtrl-sci↗