arXiv subjects

M. Helm

Publications and source records attributed to M. Helm.

54 records · Page 3Linked to original sources

arXiv2012

Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation

The integration of ferromagnetic Mn5Ge3 with the Ge matrix is promising for spin injection in a silicon-compatible geometry. In this paper, we report the preparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mn ions implantation at elevated temperature. By X-ray diffraction and transmission electron microscopy, we observe crystalline Mn5Ge3 with variable size depending on the Mn ion fluence. The electronic structure of Mn in Mn5Ge3 nanocrystals is 3d6 configuration, the same as in bulk Mn5Ge3. A large positive magnetoresistance has been observed at low temperatures. It can be explained by the conductivity inhomogeneity in the magnetic/semiconductor hybrid system.

cond-mat.mtrl-sci↗

arXiv2012

Universal phase relation between longitudinal and transverse fields observed in focused terahertz beams

We directly observe longitudinal electromagnetic fields in focused freely propagating terahertz beams of radial and linear polarization. In accordance with theory, the longitudinal fields are phase shifted by a value of pi/2 with respect to the transverse field components. This behavior is found for all frequency components of single cycle THz radiation pulses. Additionally we show that the longitudinal field of a radially polarized THz beam has a smaller spot size as compared to the transverse field of a linearly polarized beam, that is focused under the same conditions.

physics.optics↗

arXiv2012

Optical study of superconducting Ga-rich layers in silicon

We performed phase-sensitive terahertz (0.12 - 1.2 THz) transmission measurements of Ga-enriched layers in silicon. Below the superconducting transition, T_{c} = 6.7 K, we find clear signatures of the formation of a superconducting condensate and of the opening of an energy gap in the optical spectra. The London penetration depth, λ(T), and the condensate density, n_{s} = λ^{2} 0)/λ^{2}(T), as functions of temperature demonstrate behavior, typical for conventional superconductors with λ(0) = 1.8 μm. The terahertz spectra can be well described within the framework of Eliashberg theory with strong electron-phonon coupling: the zero-temperature energy gap is 2Δ(0) = 2.64 meV and 2Δ(0)/k_{B}T_{c} = 4.6 \pm 0.1, consistent with the amorphous state of Ga. At temperatures just above T_{c}, the optical spectra demonstrate Drude behavior.

cond-mat.supr-con↗

arXiv2011

Near-field examination of perovskite-based superlenses and superlens-enhanced probe-object coupling

A planar slab of negative index material works as a superlens with sub-diffraction-limited imaging resolution, since propagating waves are focused and, moreover, evanescent waves are reconstructed in the image plane. Here, we demonstrate a superlens for electric evanescent fields with low losses using perovskites in the mid-infrared regime. The combination of near-field microscopy with a tunable free-electron laser allows us to address precisely the polariton modes, which are critical for super-resolution imaging. We spectrally study the lateral and vertical distributions of evanescent waves around the image plane of such a lens, and achieve imaging resolution of wavelength/14 at the superlensing wavelength. Interestingly, at certain distances between the probe and sample surface, we observe a maximum of these evanescent fields. Comparisons with numerical simulations indicate that this maximum originates from an enhanced coupling between probe and object, which might be applicable for multifunctional circuits, infrared spectroscopy, and thermal sensors.

physics.optics↗

arXiv2010

Tailoring the magnetism of GaMnAs films by ion irradiation

Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in GaMnAs films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease as the fluence increases. The electrical and structural characterization of the irradiated GaMnAs layers indicates that the controlled tailoring of magnetism results from a compensation of holes by generated electrical defects.

cond-mat.mtrl-sci↗

arXiv2010

Landau levels and magnetopolaron effect in dilute GaAs:N

The magnetic-field dependence of the energy spectrum of GaAs doped with nitrogen impurities is investigated. Our theoretical model is based on the phenomenological Band Anticrossing Model (BAC) which we extended in order to include magnetic field and electron - phonon interaction. Due to the highly localized nature of the nitrogen state, we find that the energy levels are very different from those of pure GaAs. The polaron correction results in a lower cyclotron resonance energy as compared to pure GaAs. The magneto-absorption spectrum exhibits series of asymmetric peaks close to the cyclotron energy.

cond-mat.mtrl-sci↗

arXiv2009

MnSi$_{1.7}$ nanoparticles embedded in Si: Superparamagnetism with a collective behavior

The doping of Mn in Si is attracting research attentions due to the possibility to fabricate Si-based diluted magnetic semiconductors. However, the low solubility of Mn in Si favors the precipitation of Mn ions even at non-equilibrium growth conditions. MnSi$_{1.7}$ nanoparticles are the common precipitates, which show exotic magnetic properties in comparison with the MnSi$_{1.7}$ bulk phase. In this paper we present the static and dynamic magnetic properties of MnSi$_{1.7}$ nanoparticles. Using the Preisach model, we derive the magnetic parameters, such as the magnetization of individual particles, the distribution of coercive fields and the inter-particle interaction field. Time-dependent magnetization measurements reveal a spin-glass behavior of the system.

cond-mat.mtrl-sci↗

arXiv2009

Spinel ferrite nanocrystals embedded inside ZnO: magnetic, electronic and magneto-transport properties

In this paper we show that spinel ferrite nanocrystals (NiFe2O4, and CoFe2O4) can be texturally embedded inside a ZnO matrix by ion implantation and post-annealing. The two kinds of ferrites show different magnetic properties, e.g. coercivity and magnetization. Anomalous Hall effect and positive magnetoresistance have been observed. Our study suggests a ferrimagnet/semiconductor hybrid system for potential applications in magneto-electronics. This hybrid system can be tuned by selecting different transition metal ions (from Mn to Zn) to obtain various magnetic and electronic properties.

cond-mat.mtrl-sci↗

arXiv2009

Suppression of secondary phase formation in Fe implanted ZnO single crystals

Unwanted secondary phases are one of the major problems in diluted magnetic semiconductor creation. Here, the authors show possibilities to avoid such phases in Fe implanted and postannealed ZnO(0001) single crystals. While -Fe nanoparticles are formed after such doping in as-polished crystals, high temperature (1273 K) annealing in O2 or high vacuum before implantation suppresses these phases. Thus, the residual saturation magnetization in the preannealed ZnO single crystals is about 20 times lower than for the as-polished ones and assigned to indirect coupling between isolated Fe ions rather than to clusters.

cond-mat.mtrl-sci↗

arXiv2009

Fe-implanted ZnO: Magnetic precipitates versus dilution

Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors argue that the observed ferromagnetism stems from ferromagnetic precipitates or spinodal decomposition rather than from carrier mediated magnetic impurities, as required for a diluted magnetic semiconductor. In the present paper we answer this question for Fe-implanted ZnO single crystals comprehensively. Different implantation fluences and temperatures and post-implantation annealing temperatures have been chosen in order to evaluate the structural and magnetic properties over a wide range of parameters. Three different regimes with respect to the Fe concentration and the process temperature are found: 1) Disperse Fe$^{2+}$ and Fe$^{3+}$ at low Fe concentrations and low processing temperatures, 2) FeZn$_2$O$_4$ at very high processing temperatures and 3) an intermediate regime with a co-existence of metallic Fe (Fe$^0$) and ionic Fe (Fe$^{2+}$ and Fe$^{3+}$). Ferromagnetism is only observed in the latter two cases, where inverted ZnFe$_2$O$_4$ and $α$-Fe nanocrystals are the origin of the observed ferromagnetic behavior, respectively. The ionic Fe in the last case could contribute to a carrier mediated coupling. However, their separation is too large to couple ferromagnetically due to the lack of p-type carrier. For comparison investigations of Fe-implanted epitaxial ZnO thin films are presented.

cond-mat.mtrl-sci↗

arXiv2009

Crystallographically oriented Co and Ni nanocrystals inside ZnO formed by ion implantation and postannealing

In the last decade, transition-metal-doped ZnO has been intensively investigated as a route to room-temperature diluted magnetic semiconductors (DMSs). However, the origin for the reported ferromagnetism in ZnO-based DMS remains questionable. Possible options are diluted magnetic semiconductors, spinodal decomposition, or secondary phases. In order to clarify this question, we have performed a thorough characterization of the structural and magnetic properties of Co- and Ni-implanted ZnO single crystals. Our measurements reveal that Co or Ni nanocrystals (NCs) are the major contribution of the measured ferromagnetism. Already in the as-implanted samples, Co or Ni NCs have formed and they exhibit superparamagnetic properties. The Co or Ni NCs are crystallographically oriented with respect to the ZnO matrix. Their magnetic properties, e.g., the anisotropy and the superparamagnetic blocking temperature, can be tuned by annealing. We discuss the magnetic anisotropy of Ni NCs embedded in ZnO concerning the strain anisotropy.

cond-mat.mtrl-sci↗

arXiv2009

Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?

Recently theoretical works predict that some semiconductors (e.g. ZnO) doped with magnetic ions are diluted magnetic semiconductors (DMS). In DMS magnetic ions substitute cation sites of the host semiconductor and are coupled by free carriers resulting in ferromagnetism. One of the main obstacles in creating DMS materials is the formation of secondary phases because of the solid-solubility limit of magnetic ions in semiconductor host. In our study transition metal ions were implanted into ZnO single crystals with the peak concentrations of 0.5-10 at.%. We established a correlation between structural and magnetic properties. By synchrotron radiation X-ray diffraction (XRD) secondary phases (Fe, Ni, Co and ferrite nanocrystals) were observed and have been identified as the source for ferromagnetism. Due to their different crystallographic orientation with respect to the host crystal these nanocrystals in some cases are very difficult to be detected by a simple Bragg-Brentano scan. This results in the pitfall of using XRD to exclude secondary phase formation in DMS materials. For comparison, the solubility of Co diluted in ZnO films ranges between 10 and 40 at.% using different growth conditions pulsed laser deposition. Such diluted, Co-doped ZnO films show paramagnetic behaviour. However, only the magnetoresistance of Co-doped ZnO films reveals possible s-d exchange interaction as compared to Co-implanted ZnO single crystals.

cond-mat.mtrl-sci↗

arXiv2009

Origin of magnetic moments in defective TiO2 single crystals

In this paper we show that ferromagnetism can be induced in pure TiO2 single crystals by oxygen ion irradiation. By combining x-ray diffraction, Raman-scattering, and electron spin resonance spectroscopy, a defect complex, \emph{i.e.} Ti$^{3+}$ ions on the substitutional sites accompanied by oxygen vacancies, has been identified in irradiated TiO2. This kind of defect complex results in a local (TiO$_{6-x}$) stretching Raman mode. We elucidate that Ti$^{3+}$ ions with one unpaired 3d electron provide the local magnetic moments.

cond-mat.mtrl-sci↗

arXiv2006

Structural and magnetic properties of Mn-implanted Si

Structural and ferromagnetic properties in Mn implanted, p-type Si were investigated. High resolution structural analysis techniques like synchrotron X-ray diffraction revealed the formation of MnSi1.7 nanoparticles already in the as implanted samples. Depending on the Mn-fluence, the size increases from 5 nm to 20 nm upon rapid thermal annealing. No significant evidence is found for Mn substituting Si sites either in the as-implanted or annealed samples. The observed ferromagnetism yields a saturation moment of 0.21 mu_B per implanted Mn at 10 K, which could be assigned to MnSi1.7 nanoparticles as revealed by a temperature dependent magnetization measurement.

cond-mat.mtrl-sci↗

arXiv2006

Crystallographically oriented magnetic ZnFe2O4 nanoparticles synthesized by Fe implantation into ZnO

In this paper, a correlation between structural and magnetic properties of Fe implanted ZnO is presented. High fluence Fe^+ implantation into ZnO leads to the formation of superparamagnetic alpha-Fe nanoparticles. High vacuum annealing at 823 K results in the growth of alpha-Fe particles, but the annealing at 1073 K oxidized the majority of the Fe nanoparticles. After a long term annealing at 1073 K, crystallographically oriented ZnFe2O4 nanoparticles were formed inside ZnO with the orientation relationship of ZnFe2O4(111)[110]//ZnO(0001)[1120]. These ZnFe2O4 nanoparticles show a hysteretic behavior upon magnetization reversal at 5 K.

cond-mat.mtrl-sci↗

arXiv2006

Absence of ferromagnetism in V-implanted ZnO single crystals

The structural and magnetic properties of V doped ZnO are presented. V ions were introduced into hydrothermal ZnO single crystals by ion implantation with fluences of 1.2*10^16 to 6*10^16 cm^-2. Post-implantation annealing was performed in high vacuum from 823 K to 1023 K. The ZnO host material still partly remains in a crystalline state after irradiation, and is partly recovered by annealing. The V ions show a thermal mobility as revealed by depth profile Auger electron spectroscopy. Synchrotron radiation x-ray diffraction revealed no secondary phase formation which indicates the substitution of V onto Zn site. However in all samples no pronounced ferromagnetism was observed down to 5 K by a superconducting quantum interference device magnetometer.

cond-mat.mtrl-sci↗

arXiv2006

Crystalline Ni nanoparticles as the origin of ferromagnetism in Ni implanted ZnO crystals

We report the structural and magnetic properties of ZnO single crystals implanted at 623 K with up to 10 at. % of Ni. As revealed by X-ray diffraction, crystalline fcc-Ni nanoparticles were formed inside ZnO. The magnetic behavior (magnetization with field reversal and with different temperature protocol) of all samples is well explained by a magnetic Ni-nanoparticle system. Although the formation of Ni:ZnO based diluted magnetic semiconductor cannot be ruled out, the major contribution to the magnetic properties stems from crystalline nanoparticles synthesized under these implantation conditions.

cond-mat.mtrl-sci↗

arXiv2005

Fe implanted ferromagnetic ZnO

Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-doping with Fe ions. For an implantation temperature of 620 K and an ion fluence of 4x10^16 cm^-2, very tiny Fe particles, formed inside the host matrix, are responsible for the ferromagnetic properties. They were identified using synchrotron X-ray diffraction and Moessbauer spectroscopy. On the other hand, Fe ions implanted at a temperature of 253 K and an ion fluence of 4x10^15 cm^-2 are incorporated into the host matrix and develop a room temperature diluted magnetic semiconductor (DMS).

cond-mat.mtrl-sci↗