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M. Hentschel

Publications and source records attributed to M. Hentschel.

7 recordsLinked to original sources

MadQCI: a heterogeneous and scalable SDN QKD network deployed in production facilities

Current quantum key distribution (QKD) networks focus almost exclusively on transporting secret keys with the highest possible rate. Consequently, they are built as mostly fixed, ad hoc, logically, and physically isolated infrastructures designed to avoid any penalty to the quantum channel. This architecture is neither scalable nor cost-effective and future, real-world deployments will differ considerably. The structure of the MadQCI QKD network presented here is based on disaggregated components and modern paradigms especially designed for flexibility, upgradability, and facilitating the integration of QKD in the security and telecommunications-networks ecosystem. These underlying ideas have been tested by deploying many QKD systems from several manufacturers in a real-world, multi-tenant telecommunications network, installed in production facilities and sharing the infrastructure with commercial traffic. Different technologies have been used in different links to address the variety of situations and needs that arise in real networks, exploring a wide range of possibilities. Finally, a set of realistic use cases have been implemented to demonstrate the validity and performance of the network. The testing took place during a period close to three years, where most of the nodes were continuously active.

quant-ph

Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy

Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er0.99Ca0.01MnO3. By combining X-PEEM with scanning probe microscopy and theory, we develop a model that relates the detected X-PEEM contrast to the emergence of uncompensated bound charges, explaining the image formation based on intrinsic electronic domain-wall properties. In contrast to previously applied low-temperature electrostatic force microscopy (EFM), X-PEEM readily distinguishes between positive and negative bound charges at domain walls. Our study introduces an X-PEEM based approach for low-temperature electrostatic potential mapping, facilitating nanoscale spatial resolution and data acquisition times in the order of 0.1-1 sec.

cond-mat.mtrl-sci

Imaging and characterization of conducting ferroelectric domain walls by photoemission electron microscopy

High-resolution X-ray photoemission electron microscopy (X-PEEM) is a well-established method for imaging ferroelectric domain structures. Here, we expand the scope of application of X-PEEM and demonstrate its capability for imaging and investigating domain walls in ferroelectrics with high-spatial resolution. Using ErMnO3 as test system, we show that ferroelectric domain walls can be visualized based on photo-induced charging effects and local variations in their electronic conductance can be mapped by analyzing the energy distribution of photoelectrons. Our results open the door for non-destructive, contract-free, and element-specific studies of the electronic and chemical structure at domain walls in ferroelectrics.

cond-mat.mtrl-sci

Three-color Sagnac source of polarization-entangled photon pairs

We demonstrate a compact and stable source of polarization-entangled pairs of photons, one at 810 nm wavelength for high detection efficiency and the other at 1550 nm for long-distance fiber communication networks. Due to a novel Sagnac-based design of the interferometer no active stabilization is needed. Using only one 30 mm ppKTP bulk crystal the source produces photons with a spectral brightness of 1.13x10^6 pairs/s/mW/THz with an entanglement fidelity of 98.2%. Both photons are single-mode fiber coupled and ready to be used in quantum key distribution (QKD) or transmission of photonic quantum states over large distances.

quant-ph

Fermi Edge Singularities in the Mesoscopic Regime: II. Photo-absorption Spectra

We study Fermi edge singularities in photo-absorption spectra of generic mesoscopic systems such as quantum dots or nanoparticles. We predict deviations from macroscopic-metallic behavior and propose experimental setups for the observation of these effects. The theory is based on the model of a localized, or rank one, perturbation caused by the (core) hole left behind after the photo-excitation of an electron into the conduction band. The photo-absorption spectra result from the competition between two many-body responses, Anderson's orthogonality catastrophe and the Mahan-Nozieres-DeDominicis contribution. Both mechanisms depend on the system size through the number of particles and, more importantly, fluctuations produced by the coherence characteristic of mesoscopic samples. The latter lead to a modification of the dipole matrix element and trigger one of our key results: a rounded K-edge typically found in metals will turn into a (slightly) peaked edge on average in the mesoscopic regime. We consider in detail the effect of the "bound state" produced by the core hole.

cond-mat.mes-hall

The sequential-reflection model in deformed dielectric cavities

The stationary states of a microlaser are related to the decaying quasibound states of the corresponding passive cavity. These are interpreted classically as originating from sequential escape attempts of an ensemble of rays obeying a curvature-corrected Fresnel formula. Polarization-dependent predictions of this model, and its limitations for stable orbits in partially chaotic systems are discussed.

physics.optics

Fresnel laws at curved dielectric interfaces of microresonators

We discuss curvature corrections to Fresnel's laws for the reflection and transmission of light at a non-planar refractive-index boundary. The reflection coefficients are obtained from the resonances of a dielectric disk within a sequential-reflection model. The Goos-Hänchen effect for curved light fronts at a planar interface can be adapted to provide a qualitative and quantitative extension of the ray model which explains the observed deviations from Fresnel's laws.

physics.optics