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M. J. Manfra

Publications and source records attributed to M. J. Manfra.

At least 37 records · Page 2Linked to original sources

Stability of multielectron bubbles in high Landau levels

We study multielectron bubble phases in the $N=2$ and $N=3$ Landau levels in a high mobility GaAs/AlGaAs sample. We found that the longitudinal magnetoresistance versus temperature curves in the multielectron bubble region exhibit sharp peaks, irrespective of the Landau level index. We associate these peaks with an enhanced scattering caused by thermally fluctuating domains of a bubble phase and a uniform uncorrelated electron liquid at the onset of the bubble phases. Within the $N=3$ Landau level, onset temperatures of three-electron and two-electron bubbles exhibit linear trends with respect to the filling factor; the onset temperatures of three-electron bubbles are systematically higher than those of two-electron bubbles. Furthermore, onset temperatures of the two-electron bubble phases across $N=2$ and $N=3$ Landau levels are similar, but exhibit an offset. This offset and the dominant nature of the three-electron bubbles in the $N=3$ Landau level reveals the role of the short-range part of the electron-electron interaction in the formation of the bubbles.

cond-mat.str-el↗

Hydrodynamic and ballistic transport over large length scales in GaAs/AlGaAs

We study hydrodynamic and ballistic transport regimes through nonlocal resistance measurements and high-resolution kinetic simulations in a mesoscopic structure on a high-mobility two-dimensional electron system in a GaAs/AlGaAs heterostructure. We evince the existence of collective transport phenomena in both regimes and demonstrate that negative nonlocal resistances and current vortices are not exclusive to only the hydrodynamic regime. The combined experiments and simulations highlight the importance of device design, measurement schemes and one-to-one modeling of experimental devices to demarcate various transport regimes.

cond-mat.mes-hall↗

Zeeman-driven parity transitions in an Andreev quantum dot

The Andreev spectrum of a quantum dot embedded in a hybrid semiconductor-superconductor interferometer can be modulated by electrostatic gating, magnetic flux through the interferometer, and Zeeman splitting from in-plane magnetic field. We demonstrate parity transitions in the embedded quantum dot system, and show that the Zeeman-driven transition is accompanied by a 0-π transition in the superconducting phase across the dot. We further demonstrate that flux through the interferometer modulates both dot parity and 0-π transitions.

cond-mat.mes-hall↗

Hidden Quantum Hall Stripes in Al$_{x}$Ga$_{1-x}$As/Al$_{0.24}$Ga$_{0.76}$As Quantum Wells

We report on transport signatures of hidden quantum Hall stripe (hQHS) phases in high ($N > 2$) half-filled Landau levels of Al$_{x}$Ga$_{1-x}$As/Al$_{0.24}$Ga$_{0.76}$As quantum wells with varying Al mole fraction $x < 10^{-3}$. Residing between the conventional stripe phases (lower $N$) and the isotropic liquid phases (higher $N$), where resistivity decreases as $1/N$, these hQHS phases exhibit isotropic and $N$-independent resistivity. Using the experimental phase diagram we establish that the stripe phases are more robust than theoretically predicted, calling for improved theoretical treatment. We also show that, unlike conventional stripe phases, the hQHS phases do not occur in ultrahigh mobility GaAs quantum wells, but are likely to be found in other systems.

cond-mat.mes-hall↗

Accurate characterization of tip-induced potential using electron interferometry

Using the tip of a scanning probe microscope as a local electrostatic gate gives access to real space information on electrostatics as well as charge transport at the nanoscale, provided that the tip-induced electrostatic potential is well known. Here, we focus on the accurate characterization of the tip potential, in a regime where the tip locally depletes a two-dimensional electron gas (2DEG) hosted in a semiconductor heterostructure. Scanning the tip in the vicinity of a quantum point contact defined in the 2DEG, we observe Fabry-Pérot interference fringes at low temperature in maps of the device conductance. We exploit the evolution of these fringes with the tip voltage to measure the change in depletion radius by electron interferometry. We find that a semi-classical finite-element self-consistent model taking into account the conical shape of the tip reaches a faithful correspondence with the experimental data.

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Observation of Photoinduced Terahertz Gain in GaAs Quantum Wells: Evidence for Radiative Two-Exciton-to-Biexciton Scattering

We have observed photoinduced negative optical conductivity, or gain, in the terahertz frequency range in a GaAs multiple-quantum-well structure in a strong perpendicular magnetic field at low temperatures. The gain is narrow-band: it appears as a sharp peak (linewidth $<$0.45 meV) whose frequency shifts with applied magnetic field. The gain has a circular-polarization selection rule: a strong line is observed for hole-cyclotron-resonance-active polarization. Furthermore, the gain appears only when the exciton $1s$ state is populated, which rules out intraexcitonic transitions to be its origin. Based on these observations, we propose a possible process in which the stimulated emission of a terahertz photon occurs while two free excitons scatter into one biexciton in an energy and angular-momentum conserving manner.

cond-mat.mes-hall↗

Disorder broadening of even denominator fractional quantum Hall states in the presence of a short-range alloy potential

We study energy gaps of the $ν=7/2$ and $ν=5/2$ fractional quantum Hall states in a series of two-dimensional electron gases containing alloy disorder. We found that gaps at these two filling factors have the same suppression rate with alloy disorder. The dimensionless intrinsic gaps in our alloy samples obtained from the model proposed by Morf and d'Ambrumenil are consistent with numerical results, but are larger than those obtained from experiments on pristine samples published in the literature. The disorder broadening parameter has large uncertainties. However, a modified analysis relying on shared intrinsic gaps yields consistent results for both the $ν=5/2$ and $7/2$ fractional quantum Hall states and establishes a linear relationship between the disorder broadening parameter and alloy concentration. Furthermore, we find that we can separate contributions to the disorder broadening of the long-range and short-range scattering.

cond-mat.str-el↗

Coherent transport through a Majorana island in an Aharonov-Bohm interferometer

Majorana zero modes are leading candidates for topological quantum computation due to non-local qubit encoding and non-abelian exchange statistics. Spatially separated Majorana modes are expected to allow phase-coherent single-electron transport through a topological superconducting island via a mechanism referred to as teleportation. Here we experimentally investigate such a system by patterning an elongated epitaxial InAs-Al island embedded in an Aharonov-Bohm interferometer. With increasing parallel magnetic field, a discrete sub-gap state in the island is lowered to zero energy yielding persistent 1e-periodic Coulomb blockade conductance peaks (e is the elementary charge). In this condition, conductance through the interferometer is observed to oscillate in a perpendicular magnetic field with a flux period of h/e (h is Planck's constant), indicating coherent transport of single electrons through the islands, a signature of electron teleportation via Majorana modes, could also be observed, suggesting additional non-Majorana mechanisms for 1e transport through these moderately short wires.

cond-mat.mes-hall↗

Closing of the Induced Gap in a Hybrid Superconductor-Semiconductor Nanowire

Hybrid superconductor-semiconductor nanowires are predicted to undergo a field-induced phase transition from a trivial to a topological superconductor, marked by the closure and re-opening of the excitation gap, followed by the emergence of Majorana bound states at the nanowire ends. Many local density-of-states measurements have reported signatures of the topological phase, however this interpretation has been challenged by alternative explanations. Here, by measuring nonlocal conductance, we identify the closure of the excitation gap in the bulk of the semiconductor before the emergence of zero-bias peaks. This observation is inconsistent with scenarios where zero-bias peaks occur due to end-states with a trivially gapped bulk, which have been extensively considered in the theoretical and experimental literature. We observe that after the gap closes, nonlocal signals fluctuate strongly and persist irrespective of the presence of local-conductance zero-bias peaks. Thus, our observations are also incompatible with a simple picture of clean topological superconductivity. This work presents a new experimental approach for probing the spatial extent of states in Majorana wires, and reveals the presence of a regime with a continuum of spatially extended states and uncorrelated zero-bias peaks.

cond-mat.mes-hall↗

Anomalous Nematic States in High Half-Filled Landau Levels

It is well established that the ground states of a two-dimensional electron gas with half-filled high ($N \ge 2$) Landau levels are compressible charge-ordered states, known as quantum Hall stripe (QHS) phases. The generic features of QHSs are a maximum (minimum) in a longitudinal resistance $R_{xx}$ ($R_{yy}$) and a non-quantized Hall resistance $R_H$. Here, we report on emergent minima (maxima) in $R_{xx}$ ($R_{yy}$) and plateau-like features in $R_H$ in half-filled $N \ge 3$ Landau levels. Remarkably, these unexpected features develop at temperatures considerably lower than the onset temperature of QHSs, suggesting a new ground state.

cond-mat.mes-hall↗

Quest for topological superconductivity at superconductor-semiconductor interfaces

We analyze the evidence of Majorana zero modes in nanowires that came from tunneling spectroscopy and other experiments, and scout the path to topologically protected states that are of interest for quantum computing. We illustrate the importance of the superconductor-semiconductor interface quality and sketch out where further progress in materials science of these interfaces can take us. Finally, we discuss the prospects of observing more exotic non-Abelian anyons based on the same materials platform, and how to make connections to high energy physics.

cond-mat.mes-hall↗

Relating Andreev Bound States and Supercurrents in Hybrid Josephson Junctions

We investigate superconducting quantum interference devices consisting of two highly transmissive Josephson junctions coupled by a superconducting loop, all defined in an epitaxial InAs/Al heterostructure. A novel device design allows for independent measurements of the Andreev bound state spectrum within the normal region of a junction and the resulting current-phase relation. We show that knowledge of the Andreev bound state spectrum alone is enough to derive the independently measured phase dependent supercurrent. On the other hand, the opposite relation does not generally hold true as details of the energy spectrum are averaged out in a critical current measurement. Finally, quantitative understanding of field dependent spectrum and supercurrent require taking into account the second junction in the loop and the kinetic inductance of the epitaxial Al film.

cond-mat.mes-hall↗

Autonomous tuning and charge state detection of gate defined quantum dots

Defining quantum dots in semiconductor based heterostructures is an essential step in initializing solid-state qubits. With growing device complexity and increasing number of functional devices required for measurements, a manual approach to finding suitable gate voltages to confine electrons electrostatically is impractical. Here, we implement a two-stage device characterization and dot-tuning process which first determines whether devices are functional and then attempts to tune the functional devices to the single or double quantum dot regime. We show that automating well established manual tuning procedures and replacing the experimenter's decisions by supervised machine learning is sufficient to tune double quantum dots in multiple devices without pre-measured input or manual intervention. The quality of measurement results and charge states are assessed by four binary classifiers trained with experimental data, reflecting real device behaviour. We compare and optimize eight models and different data preprocessing techniques for each of the classifiers to achieve reliable autonomous tuning, an essential step towards scalable quantum systems in quantum dot based qubit architectures.

quant-ph↗

A Cryogenic Interface for Controlling Many Qubits

A scaled-up quantum computer will require a highly efficient control interface that autonomously manipulates and reads out large numbers of qubits, which for solid-state implementations are usually held at millikelvin (mK) temperatures. Advanced CMOS technology, tightly integrated with the quantum system, would be ideal for implementing such a control interface but is generally discounted on the basis of its power dissipation that leads to heating of the fragile qubits. Here, we demonstrate an ultra low power, CMOS-based quantum control platform that takes digital commands as input and generates many parallel qubit control signals. Realized using 100,000 transistors operating near 100 mK, our platform alleviates the need for separate control lines to every qubit by exploiting the low leakage of transistors at cryogenic temperatures to store charge on floating gate structures that are used to tune-up quantum devices. This charge can then be rapidly shuffled between on-chip capacitors to generate the fast voltage pulses required for dynamic qubit control. We benchmark this architecture on a quantum dot test device, showing that the control of thousands of gate electrodes is feasible within the cooling power of commercially available dilution refrigerators.

quant-ph↗

Repairing the Surface of InAs-based Topological Heterostructures

Candidate systems for topologically-protected qubits include two-dimensional electron gases (2DEGs) based on heterostructures exhibiting a strong spin-orbit interaction (SOI) and superconductivity via the proximity effect. For InAs- or InSb-based materials, the need to form shallow quantum wells to create a hard-gapped $p$-wave superconducting state often subjects them to fabrication-induced damage, limiting their mobility. Here we examine scattering mechanisms in processed InAs 2DEG quantum wells and demonstrate a means of increasing their mobility via repairing the semiconductor-dielectric interface. Passivation of charged impurity states with an argon-hydrogen plasma results in a significant increase in the measured mobility and reduction in its variance relative to untreated samples, up to 45300 cm$^2$/(V s) in a 10 nm deep quantum well.

cond-mat.mes-hall↗

Characterising Quantum Devices at Scale with Custom Cryo-CMOS

We make use of a custom-designed cryo-CMOS multiplexer (MUX) to enable multiple quantum devices to be characterized in a single cool-down of a dilution refrigerator. Combined with a packaging approach that integrates cryo-CMOS chips and a hot-swappable, parallel device test platform, we describe how this setup takes a standard wiring configuration as input and expands the capability for batch-characterization of quantum devices at milli-Kelvin temperatures and high magnetic fields. The architecture of the cryo-CMOS multiplexer is discussed and performance benchmarked using few-electron quantum dots and Hall mobility-mapping measurements.

physics.app-ph↗

Electron Bubbles and the Structure of the Orbital Wavefunction

Stripe-like and bubble-like patterns spontaneously form in numerous physical, chemical, and biological systems when competing long-range and short-range interactions banish uniformity. Stripe-like and the related nematic morphology are also under intense scrutiny in various strongly correlated electron systems. In contrast, the electronic bubble morphology is rare. Some of the most intriguing electron bubbles develop in the two-dimensional electron gas subjected to a perpendicular magnetic field. However, in contrast to bubbles forming in classical systems such as the Turing activator-inhibitor reaction or Langmuir films, bubbles in electron gases owe their existence to elementary quantum mechanics: they are stabilized as wavefunctions of individual electrons overlap. Here we report a rich pattern of multi-electron bubble phases in a high Landau level and we conclude that this richness is due to the nodal structure of the orbital component of the electronic wavefunction.

cond-mat.str-el↗

Effect of density on microwave-induced resistance oscillations in back-gated GaAs quantum wells

We report on microwave-induced resistance oscillations (MIROs) in a tunable-density 30-nm-wide GaAs/AlGaAs quantum well. We find that the MIRO amplitude increases dramatically with carrier density. Our analysis shows that the anticipated increase in the effective microwave power and quantum lifetime with density is not sufficient to explain the observed growth of the amplitude. We further observe that the fundamental oscillation extrema move towards cyclotron resonance with increasing density, which also contradicts theoretical predictions. These findings reveal that the density dependence is not properly captured by existing theories, calling for further studies.

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