arXiv subjects

M. J. Manfra

Publications and source records attributed to M. J. Manfra.

At least 91 records · Page 5Linked to original sources

arXiv2012

20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec

In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equivalent oxide thickness (EOT) and nanowire width (WNW) scaling down to 1.2nm and 20nm, respectively. SS and DIBL as low as 63mV/dec and 7mV/V have been demonstrated, indicating excellent interface quality and scalability. Highest ION = 0.63mA/μm and gm = 1.74mS/μm have also been achieved at VDD=0.5V, showing great promise of InGaAs GAA technology for 10nm and beyond high-speed low- power logic applications.

cond-mat.mes-hall↗

arXiv2012

Contrasting Energy Scales of the Reentrant Integer Quantum Hall States

We report drastically different onset temperatures of the reentrant integer quantum Hall states in the second and third Landau level. This finding is in quantitative disagreement with the Hartree-Fock theory of the bubble phases which is thought to describe these reentrant states. Our results indicate that the number of electrons per bubble in either the second or the third Landau level is likely different than predicted.

cond-mat.str-el↗

arXiv2012

Magnetoplasmon resonance in 2D electron system driven into a zero-resistance state

We report on a remarkably strong, and a rather sharp, photoresistance peak originating from a dimensional magnetoplasmon resonance (MPR) in a high mobility GaAs/AlGaAs quantum well driven by microwave radiation into a zero-resistance state (ZRS). The analysis of the MPR signalreveals a negative background providing experimental evidence for the concept of absolute negative resistance associated with the ZRS. When a system is further subject to a dc field, the maxima of microwave-induced resistance oscillations decay away and a system reveals a state with close-to-zero differential resistance. The MPR peak, on the other hand, remains essentially unchanged, indicating surprisingly robust Ohmic behavior under the MPR conditions.

cond-mat.mes-hall↗

arXiv2012

Exploration of the Limits to Mobility in Two-Dimensional Hole Systems in GaAs/AlGaAs Quantum Wells

We report on the growth and electrical characterization of a series of two-dimensional hole systems (2DHSs) used to study the density dependence of low temperature mobility in 20 nm GaAs/AlGaAs quantum wells. The hole density was controlled by changing the Al mole fraction and the setback of the delta-doping layer. We varied the density over a range from 1.8 $\times$ 10$^{10}$ cm$^{-2}$ to 1.9 $\times$ 10$^{11}$ cm$^{-2}$ finding a nonmonotonic dependence of mobility on density at T = 0.3 K. Surprisingly, a peak mobility of 2.3 $\times$ 10$^6$ cm$^2$/Vs was measured at a density of 6.5 $\times$ 10$^{10}$ cm$^{-2}$ with further increase in density resulting in reduced mobility. We discuss possible mechanisms leading to the observed non-monotonic density dependence of the mobility. Relying solely on interface roughness scattering to explain the observed drop in mobility at high density requires roughness parameters which are not consistent with measurements of similar electron structures. This leaves open the possibility of contributions from other scattering mechanisms at high density.

cond-mat.mes-hall↗

arXiv2011

Quantitative Analysis of the Disorder Broadening and the Intrinsic Gap for the $ν=5/2$ Fractional Quantum Hall State

We report a reliable method to estimate the disorder broadening parameter from the scaling of the gaps of the even and major odd denominator fractional quantum Hall states of the second Landau level. We apply this technique to several samples of vastly different densities and grown in different MBE chambers. Excellent agreement is found between the estimated intrinsic and numerically obtained energy gaps for the $ν=5/2$ fractional quantum Hall state. Futhermore, we quantify, for the first time, the dependence of the intrinsic gap at $ν=5/2$ on Landau level mixing.

cond-mat.str-el↗

arXiv2011

Evidence for the Collective Nature of the Reentrant Integer Quantum Hall States of the Second Landau Level

We report an unexpected sharp peak in the temperature dependence of the magnetoresistance of the reentrant integer quantum Hall states in the second Landau level. This peak defines the onset temperature of these states. We find that in different spin branches the onset temperatures of the reentrant states scale with the Coulomb energy. This scaling provides direct evidence that Coulomb interactions play an important role in the formation of these reentrant states evincing their collective nature.

cond-mat.str-el↗

arXiv2011

Particle-hole Asymmetry of Fractional Quantum Hall States in the Second Landau Level of a Two-dimensional Hole System

We report the first unambiguous observation of a fractional quantum Hall state in the Landau level of a two-dimensional hole sample at the filling factor $ν=8/3$. We identified this state by a quantized Hall resistance and an activated temperature dependence of the longitudinal resistance and found an energy gap of 40 mK. To our surprise the particle-hole conjugate state at filling factor $ν=7/3$ in our sample does not develop down to 6.9 mK. This observation is contrary to that in electron samples in which the 7/3 state is typically more stable than the 8/3 state. We present evidence that the asymmetry between the 7/3 and 8/3 states in our hole sample is due to Landau level mixing.

cond-mat.mes-hall↗

arXiv2011

Scattering Mechanisms in a High Mobility Low Density Carbon-Doped (100) GaAs Two-Dimensional Hole System

We report on a systematic study of the density dependence of mobility in a low-density Carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T= 50 mK, a mobility of 2.6 x 10^6 cm^2/Vs at a density p=6.2 x 10^10 cm^- was measured. This is the highest mobility reported for a 2DHS to date. Using a back-gated sample geometry, the density dependence of mobility was studied from 2.8 x 10^10 cm^-2 to 1 x 10^11 cm^-2. The mobility vs. density cannot be fit to a power law dependence of the form mu ~ p^alpha using a single exponent alpha. Our data indicate a continuous evolution of the power law with alpha ranging from ~ 0.7 at high density and increasing to ~ 1.7 at the lowest densities measured. Calculations specific to our structure indicate a crossover of the dominant scattering mechanism from uniform background impurity scattering at high density to remote ionized impurity scattering at low densities. This is the first observation of a carrier density-induced transition from background impurity dominated to remote dopant dominated transport in a single sample.

cond-mat.str-el↗

arXiv2011

Integrated Electronic Transport and Thermometry at milliKelvin Temperatures and in Strong Magnetic Fields

We fabricated a He-3 immersion cell for transport measurements of semiconductor nanostructures at ultra low temperatures and in strong magnetic fields. We have a new scheme of field-independent thermometry based on quartz tuning fork Helium-3 viscometry which monitors the local temperature of the sample's environment in real time. The operation and measurement circuitry of the quartz viscometer is described in detail. We provide evidence that the temperature of two-dimensional electron gas confined to a GaAs quantum well follows the temperature of the quartz viscometer down to 4mK.

cond-mat.mes-hall↗

arXiv2010

Nonconventional odd denominator fractional quantum Hall states in the second Landau level

We report the observation of a new fractional quantum Hall state in the second Landau level of a two-dimensional electron gas at the Landau level filling factor $ν=2+6/13$. We find that the model of noninteracting composite fermions can explain the magnitude of gaps of the prominent 2+1/3 and 2+2/3 states. The same model fails, however, to account for the gaps of the 2+2/5 and the newly observed 2+6/13 states suggesting that these two states are of exotic origin.omposite fermion model. However, the weaker 2+2/5 and 2+6/13 states deviate significantly suggesting that these states are of exotic origin.

cond-mat.mes-hall↗

arXiv2007

Transport and percolation in a low-density high-mobility two-dimensional hole system

We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime ($p\agt 4 \times 10^{9}$ cm$^{-2}$), the nonmonotonic temperature dependence ($\sim 50-300$ mK) of the resistivity is consistent with temperature dependent screening of residual impurities. At a fixed temperature of $T$= 50 mK, the conductivity vs. density data indicates an inhomogeneity driven percolation-type transition to an insulating state at a critical density of $3.8\times 10^9$ cm$^{-2}$.

cond-mat.mes-hall↗

arXiv2007

Impact of spin-orbit coupling on quantum Hall nematic phases

Anisotropic charge transport is observed in a two-dimensional (2D) hole system in a perpendicular magnetic field at filling factors nu=7/2, nu=11/2, and nu=13/2 at low temperature. In stark contrast, the transport at nu=9/2 is isotropic for all temperatures. Isotropic hole transport at nu=7/2 is restored for sufficiently low 2D densities or an asymmetric confining potential. The density and symmetry dependences of the observed anisotropies suggest that strong spin-orbit coupling in the hole system contributes to the unusual transport behavior.

cond-mat.mes-hall↗

arXiv2007

Mesoscopic structures and 2D hole systems in fully field effect controlled heterostructures

Two fundamental extensions to the function of previously described fully field effect two-dimensional (2D) electron heterostructures are presented: First, using the same basic heterostructure design of lithographically defined contacts overlain by both an insulating layer and top-gate employed for electron systems, appropriate contact material allows a high mobility 2D hole layer to be populated. Second, a simple method for producing mesoscopic structures in these devices is presented in which small-scale metallic patterns are placed on the heterostructure under the insulating and global gate layers which allows local carrier density tuning via the overlapping gate arrays. Example devices using these generally applicable methods are demonstrated.

cond-mat.mes-hall↗

arXiv2007

Confinement of fractional quantum Hall states in narrow conducting channels

Confinement of small-gapped fractional quantum Hall states facilitates quasiparticle manipulation and is an important step towards quasiparticle interference measurements. Demonstrated here is conduction through top gate defined, narrow channels in high density, ultra-high mobility heterostructures. Transport evidence for the persistence of a correlated state at filling fraction 5/3 is shown in channels of 2micron length but gated to near 0.3micron in width. The methods employed to achieve this confinement hold promise for interference devices proposed for studying potential non-Abelian statistics at filling fraction 5/2.

cond-mat.mes-hall↗

arXiv2006

Large Bychkov-Rashba spin-orbit coupling in high-mobility GaN/AlGaN heterostructures

We present low temperature magnetoconductivity measurements of a density-tunable and high mobility two-dimensional electron gas confined in the wide bandgap GaN/AlGaN system. We observed pronounced anti-localization minima in the low-field conductivity, indicating the presence of strong spin-orbit coupling. Density dependent measurements of magnetoconductivity indicate that the coupling is mainly due to the Bychkov-Rashba mechanism. In addition, we have derived a closed-form expression for the magnetoconductivity, allowing us to extract reliable transport parameters for our devices. The Rashba spin-orbit coupling constant is $α_{so}$ $\sim$ 6$\times$ 10$^{-13}$eVm, while the conduction band spin-orbit splitting energy amounts to $Δ_{so}$ $\sim$ 0.3meV at n$_e$=1$\times10^{16}$m$^{-2}$.

cond-mat.mes-hall↗

arXiv2006

Reentrant anisotropic phases in a two-dimensional hole system

Anisotropic charge transport is observed in a two-dimensional (2D) hole system in a perpendicular magnetic field at filling factors nu=7/2 and nu=11/2 for temperatures below 150mK. In stark contrast, the transport at nu=9/2 is isotropic for all temperatures. Our results for a two-dimensional hole system differ substantially from 2D electron transport where no anisotropy has been observed at nu=7/2, the strongest anisotropy occurs at nu=9/2, and reentrant behavior is not evident. We attribute this difference to strong spin-orbit coupling in the hole system.

cond-mat.mes-hall↗

arXiv2005

Acoustic phonon scattering in a low density, high mobility AlGaN/GaN field effect transistor

We report on the temperature dependence of the mobility, $μ$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to 3.0$\times10^{12}$ cm$^{-2}$ and a peak mobility of 80,000 cm$^{2}$/Vs. Between 20 K and 50 K we observe a linear dependence $μ_{ac}^{-1} = α$T indicating that acoustic phonon scattering dominates the temperature dependence of the mobility, with $α$ being a monotonically increasing function of decreasing 2D electron density. This behavior is contrary to predictions of scattering in a degenerate electron gas, but consistent with calculations which account for thermal broadening and the temperature dependence of the electron screening. Our data imply a deformation potential D = 12-15 eV.

cond-mat.mtrl-sci↗

arXiv2005

High mobility two-dimensional hole system in GaAs/AlGaAs quantum wells grown on (100) GaAs substrates

We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation-doped with carbon utilizing a novel resistive filament source. At T=0.3K and carrier density p=1x10^11cm^-2, a mobility of 10^6cm^2/Vs is achieved. At fixed carrier density p=10^11cm^-2, the mobility is found to be a non-monotonic function of the quantum well width. The mobility peaks at 10^6cm^2/Vs for a 15nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along (0\bar11) is approximately 20% higher than along the (011) direction. In addition, the low temperature carrier density is found to have low sensitivity to light. The hole density increases by only ~10% after exposure to red light at T=4.2K. In structures designed for a lower carrier density of 3.6x10^10cm^-2, a mobility of 800,000cm^2/Vs is achieved at T=15mK.

cond-mat.mes-hall↗