arXiv subjects

M. Kareev

Publications and source records attributed to M. Kareev.

53 records · Page 3Linked to original sources

arXiv2013

Metallic Conductance at the Interface of Tri-color Titanate Superlattices

Ultra-thin tri-color (tri-layer) titanate superlattices ([3u.c. LaTiO3/2u.c. SrTiO3/3u.c. YTiO3], u.c. = unit cells) were grown in a layer-by-layer way on single crystal TbScO3 (110) substrates by pulsed laser deposition. High sample quality and electronic structure were characterized by the combination of in-situ photoelectron and ex-situ structure and surface morphology probes. Temperature-dependent sheet resistance indicates the presence of metallic interfaces in both [3u.c. LaTiO3/2u.c. SrTiO3] bi-layers and all the tri-color structures, whereas a [3u.c. YTiO3/2u.c. SrTiO3] bi-layer shows insulating behavior. Considering that in the bulk YTiO3 is ferromagnetic below 30 K, the tri-color titanate superlattices provide an opportunity to induce tunable spin- polarization into the two-dimensional electron gas (2DEG) with Mott carriers.

cond-mat.str-el↗

arXiv2013

Strain mediated suppression of the metal-insulator transition in EuNiO3 thin films

Ultrathin epitaxial films of EuNiO3 were grown on a series of substrates traversing highly compressive (- 2.4%) to highly tensile (2.5%) lattice mismatch. X-ray diffraction measurements showed the expected c-lattice parameter shift for compressive strain, but no detectable shift for tensilely strained substrates, while reciprocal space mapping confirmed the tensile strained film maintained epitaxial coherence. Transport measurements showed a successively (from tensile to compressive) lower resistance and a complete suppression of the metalinsulator transition at highly compressive lattice mismatch. Corroborating these findings, X-ray absorption spectroscopy measurements revealed a strong multiplet splitting in the tensile samples that progressively weakens with increasing compressive strain that, combined with cluster calculations, showed enhanced covalence between Ni-d and O-p orbitals leads to the metallic state.

cond-mat.str-el↗

arXiv2013

Enhanced Spin and Electronic Reconstructions at the Cuprate-Manganite Interface

We report on a resonant soft X-ray spectroscopy study of the electronic and magnetic structure of the cuprate-manganite interface. Polarized X-ray spectroscopy measurements taken at the Cu L edge reveal up to a five-fold increase in the dichroic signal as compared to past experimental and theoretical values. Furthermore an increase in the degree of interlayer charge transfer up to 0.25e (where e is charge of an electron) per copper ion is observed leading to a profound reconstruction in the orbital scheme for these interfacial copper ions. It is inferred that these enhancement are related to an increase in TMI observed for manganite layers grown with rapidly modulated flux.

cond-mat.str-el↗

arXiv2012

Epitaxial growth of (111)-oriented LaAlO$_3$/LaNiO$_3$ ultra-thin superlattices

The epitaxial stabilization of a single layer or superlattice structures composed of complex oxide materials on polar (111) surfaces is severely burdened by reconstructions at the interface, that commonly arise to neutralize the polarity. We report on the synthesis of high quality LaNiO$_3$/mLaAlO$_3$ pseudo cubic (111) superlattices on polar (111)-oriented LaAlO$_3$, the proposed complex oxide candidate for a topological insulating behavior. Comprehensive X-Ray diffraction measurements, RHEED, and element specific resonant X-ray absorption spectroscopy affirm their high structural and chemical quality. The study offers an opportunity to fabricate interesting interface and topology controlled (111) oriented superlattices based on ortho-nickelates.

cond-mat.mtrl-sci↗

arXiv2012

Field-effect diode based on electron-induced Mott transition in NdNiO3

We studied an electron-induced metal-insulator transition in a two-terminal device based on oxide NdNiO3. In our device, the NdNiO3 is electrostatically doped by the voltage applied between the terminals, resulting in an asymmetric conductivity with respect to the bias polarity. The asymmetry is temperature-dependent and is most significant near the metal-insulator transition. The I-V characteristics exhibit a strong dependence both on the thermal history and the history of the applied voltage bias. Our two-terminal device represents a simple and efficient route for studies of the effect of electron doping on the metal-insulator transition.

cond-mat.mes-hall↗

arXiv2012

Metal-insulator transition and orbital reconstruction in Mott quantum wells of NdNiO$_{3}$

The metal-insulator transition (MIT) and the underlying electronic and orbital structure in $e_{g}^{1}$ quantum wells based on NdNiO$_{3}$ was investigated by d.c. transport and resonant soft x-ray absorption spectroscopy. By comparing quantum wells of the same dimension but with two different confinement structures, we explicitly demonstrate that the quantum well boundary condition of correlated electrons is critical to selecting the many-body ground state. In particular, the long-range orderings and the MIT are found to be strongly enhanced under quantum confinement by sandwiching NdNiO$_{3}$ with the wide-gap dielectric LaAlO$_{3}$, while they are suppressed when one of the interfaces is replaced by a surface (interface with vacuum). Resonant spectroscopy reveals that the reduced charge fluctuations in the sandwich structure are supported by the enhanced propensity to charge ordering due to the suppressed $e_g$ orbital splitting when interfaced with the confining LaAlO$_{3}$ layer.

cond-mat.str-el↗

arXiv2012

Strain-controlled band engineering and self-doping in ultrathin LaNiO$_3$ films

We report on a systematic study of the temperature-dependent Hall coefficient and thermoelectric power in ultra-thin metallic LaNiO$_3$ films that reveal a strain-induced, self-doping carrier transition that is inaccessible in the bulk. As the film strain varies from compressive to tensile at fixed composition and stoichiometry, the transport coefficients evolve in a manner strikingly similar to those of bulk hole-doped superconducting cuprates with varying doping level. Density functional calculations reveal that the strain-induced changes in the transport properties are due to self-doping in the low-energy electronic band structure. The results imply that thin-film epitaxy can serve as a new means to achieve hole-doping in other (negative) charge-transfer gap transition metal oxides without resorting to chemical substitution.

cond-mat.str-el↗

arXiv2012

Orbital control in strained ultra-thin LaNiO$_3$/LaAlO$_3$ superlattices

In pursuit of rational control of orbital polarization, we present a combined experimental and theoretical study of single unit cell superlattices of the correlated metal LaNiO$_3$ and the band insulator LaAlO$_3$. Polarized x-ray absorption spectra show a distinct asymmetry in the orbital response under strain. A splitting of orbital energies consistent with octahedral distortions is found for the case of compressive strain. In sharp contrast, for tensile strain, no splitting is found although a strong orbital polarization is present. Density functional theory calculations including a Hubbard U term reveal that this asymmetry is a result of the interplay of strain and confinement induces octahedral rotations and distortions and altered covalency in the bonding across the interfacial Ni-O-Al apical oxygen, leading to a charge disporportionation at the Ni sites for tensile strain.

cond-mat.str-el↗

arXiv2011

Epitaxial Stabilization of Ultrathin Films of Rare-Earth Nickelates

We report on the synthesis of ultrathin films of highly distorted EuNiO3 (ENO) grown by interrupted pulse laser epitaxy on YAlO3 (YAO) substrates. Through mapping the phase space of nickelate thin film epitaxy, the optimal growth temperatures were found to scale linearly with the Goldschmidt tolerance factor. Considering the gibbs energy of the expanding film, this empirical trend is discussed in terms of epitaxial stabilization and the escalation of the lattice energy due to lattice distortions and decreasing symmetry. These findings are fundamental to other complex oxide perovskites, and provide a route to the synthesis of other perovskite structures in ultrathin-film form.

cond-mat.str-el↗

arXiv2011

Asymmetric orbital-lattice interactions in ultra-thin correlated oxide films

Using resonant X-ray spectroscopies combined with density functional calculations, we find an asymmetric bi-axial strain-induced $d$-orbital response in ultra-thin films of the correlated metal LaNiO$_3$ which are not accessible in the bulk. The sign of the misfit strain governs the stability of an octahedral "breathing" distortion, which, in turn, produces an emergent charge-ordered ground state with an altered ligand-hole density and bond covalency. Control of this new mechanism opens a pathway to rational orbital engineering, providing a platform for artificially designed Mott materials.

cond-mat.mtrl-sci↗

arXiv2011

Strain dependent transport properties of the quasi two-dimensional correlated metal, LaNiO$_{3}$

We explore the electrical transport and magneto-conductance in quasi two-dimensional strongly correlated ultrathin films of LaNiO$_{3}$ (LNO) to investigate the effect of hetero-epitaxial strain on electron-electron and electron-lattice interactions from the low to intermediate temperature range (2K$\sim$170K). The fully epitaxial 10 unit cell thick films spanning tensile strain up to $\sim4%$ are used to investigate effects of enhanced carrier localization driven by a combination of weak localization and electron-electron interactions at low temperatures. The magneto-conductance data shows the importance of the increased contribution of weak localization to low temperature quantum corrections. The obtained results demonstrate that with increasing tensile strain and reduced temperature the quantum confined LNO system gradually evolves from the Mott into the Mott-Anderson regime.

cond-mat.str-el↗

arXiv2011

Quantum confinement of Mott electrons in ultrathin LaNiO3/LaAlO3 superlattice

We investigate the electronic reconstruction in (LaNiO$_{3}$)$_n$/(LaAlO$_{3}$)$_3$ (n=3, 5 and 10) superlattices due to the quantum confinement (QC) by d.c. transport and resonant soft x-ray absorption spectroscopy. In proximity to the QC limit, a Mott-type transition from an itinerant electron behavior to a localized state is observed. The system exhibits tendency towards charge-order during the transition. ab initio cluster calculations are in good agreement with the absorption spectra, indicating that the apical ligand hole density is highly suppressed resulting in a strong modification of the electronic structure. At the dimensional crossover cellular dynamical-mean-field calculations support the emergence of a Mott insulator ground state in the heterostructured ultra-thin slab of LaNiO$_{3}$.

cond-mat.str-el↗

arXiv2010

Sub-monolayer nucleation and growth of complex oxide heterostructures at high supersaturation and rapid flux modulation

We report on the non-trivial nanoscale kinetics of the deposition of novel complex oxide heterostructures composed of a unit-cell thick correlated metal LaNiO3 and dielectric LaAlO3. The multilayers demonstrate exceptionally good crystallinity and surface morphology maintained over the large number of layers, as confirmed by AFM, RHEED, and synchrotron X-ray diffraction. To elucidate the physics behind the growth, the temperature of the substrate and the deposition rate were varied over a wide range and the results were treated in the framework of a two-layer model. These results are of fundamental importance for synthesis of new phases of complex oxide heterostructures.

cond-mat.str-el↗

arXiv2010

Strain-mediated metal-insulator transition in epitaxial ultra-thin films of NdNiO3

We have synthesized epitaxial NdNiO$_{3}$ ultra-thin films in a layer-by-layer growth mode under tensile and compressive strain on SrTiO$_{3}$ (001) and LaAlO$_3$ (001), respectively. A combination of X-ray diffraction, temperature dependent resistivity, and soft X-ray absorption spectroscopy has been applied to elucidate electronic and structural properties of the samples. In contrast to the bulk NdNiO$_{3}$, the metal-insulator transition under compressive strain is found to be completely quenched, while the transition remains under the tensile strain albeit modified from the bulk behavior.

cond-mat.str-el↗

arXiv2010

Effect of polar discontinuity on the growth of LaNiO3/LaAlO3 superlattices

We have conducted a detailed microscopic investigation of [LaNiO3(1 u.c.)/LaAlO3(1 u.c.)]N superlattices grown on (001) SrTiO3 and LaAlO3 to explore the influence of polar mismatch on the resulting electronic and structural properties. Our data demonstrate that the initial growth on the non-polar SrTiO3 surface leads to a rough morphology and unusual 2+ valence of Ni in the first LaNiO3 layer, which is not observed after growth on the polar surface of LaAlO3. A newly devised model suggests that the polar mismatch can be resolved if the perovskite layers grow with an excess of LaO, which also accounts for the observed electronic, chemical, and structural effects.

cond-mat.mtrl-sci↗

arXiv2009

Electronic and Magnetic Properties of the Interface between a doped cuprate Y0.6Pr0.4Ba2Cu3O7 and a colossal-magnetoresistance manganite La2/3Ca1/3MnO3

The interfacial properties of Y0.6Pr0.4Ba2Cu3O7/La2/3Ca1/3MnO3 superlattices have been studied by resonant soft x-rays and diffuse scattered neutrons. Linearly polarized X-ray absorption at Cu L3 -edge reveals dramatic interfacial changes from the bulk including charge transfer between LCMO and YPBCO and an orbital reconstruction in the interface CuO2 plane. The similarities to the case of zero Pr-doping are due to the strongly hybridized covalent bond between Cu and Mn. However, reduced charge transfer and a more bulk-like interfacial orbital occupation are observed and related to the effect of Pr-doping. Neutron reflectometry measurements reveal a drastic increase in diffuse scattering with decreasing temperature, likely due to buckling caused by the structural phase transition of the SrTiO3 substrate. We observe no evidence that this diffuse scattering is related to the superconducting transition.

cond-mat.str-el↗

arXiv2009

Depth-Resolved Subsurface Defects in Chemically Etched SrTiO3

Depth-resolved cathodoluminescence spectroscopy of atomically flat TiO2-terminated SrTiO3 single crystal surfaces reveals dramatic differences in native point defects produced by conventional etching with buffered HF (BHF) and an alternative procedure using HCl-HNO3 acidic solution (HCLNO), which produces three times fewer oxygen vacancies before and nearly an order of magnitude fewer after pure oxygen annealing. BHF-produced defect densities extend hundreds of nm below the surface, whereas the lower HCLNO-treated densities extend less than 50 nm. This "Arkansas" HCLNO etch and anneal method avoids HF handling and provides high quality SrTiO3 surfaces with low native defect density for complex oxide heterostructure growth

cond-mat.mtrl-sci↗