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M. Naito

Publications and source records attributed to M. Naito.

At least 37 records · Page 2Linked to original sources
arXiv2005

Origin of superconducting carriers in "non-doped" T'- (La,RE)2CuO4 (RE = Sm, Eu, Gd, Tb, Lu, and Y) prepared by molecular beam epitaxy

We have performed a systematic investigation of the variations of the lattice constants with substituent rare-earth element concentration x in the nominally undoped superconductors T'-(La3+)2-x(RE3+)xCuO4 (RE = Sm, Eu, Gd, Tb, Lu, and Y), which we have recently discovered using MBE. The results show both the in-plane and out-of-plane lattice constants (a0 and c0) linearly decrease with x, whose extrapolation to x = 2 agrees well with the reported a0 and c0 values for each T'-RE2CuO4. This behavior is what one would expect simply from the ionic size difference between La3+ and RE3+. The absence of the Cu-O bond stretching due to electron-doping, which is commonly observed in electron-doped T' and infinite-layer superconductors, implies that electron doping via oxygen deficiencies is, at least, not a main source of charge carriers.

cond-mat.supr-con↗
arXiv2005

New class of T-prime-structure cuprate superconductors

High-temperature superconductivity has been discovered in La2-xBaxCuO4 [1], a compound that derives from the undoped La2CuO4 crystallizing in the perovskite T-structure. In this structure oxygen octahedra surround the copper ions. It is common knowledge that charge carriers induced by doping in such an undoped antiferromagnetic Mott-insulator lead to high-temperature superconductivity [2- 4]. The undoped material La2CuO4 is also the basis of the electron-doped cuprate superconductors [5] of the form La2-xCexCuO4+y [6,7] which however crystallize in the so called T-prime-structure, i.e. without apical oxygen above or below the copper ions of the CuO2-plane. It is well known that for La2-xCexCuO4+y the undoped T-prime-structure parent compound cannot be prepared due to the structural phase transition back into the T-structure occuring around x ~ 0.05. Here, we report that if La is substituted by RE = Y, Lu, Sm, Eu, Gd, or Tb, which have smaller ionic radii but have the same valence as La, nominally undoped La2-xRExCuO4 can be synthesized by molecular beam epitaxy in the T-prime-structure. The second important result is that all these new T-prime-compounds are superconductors with fairly high critical temperatures up to 21 K. For this new class of cuprates La2-xRExCuO4, which forms the T-prime-parent compounds of the La-based electron doped cuprates, we have not been able to obtain the Mott-insulating ground state for small x before the structural phase transition into the T-structure takes place.

cond-mat.supr-con↗
arXiv2004

All-MgB2 Josephson tunnel junctions

Sandwich-type all-MgB2 Josephson tunnel junctions (MgB2/AlOx/MgB2) have been fabricated for the first time with as-grown MgB2 films formed by molecular beam epitaxy. The junctions exhibit substantial superconducting current (IcRN product ~ 0.8 mV at 4.2K), a well-defined superconducting gap (delta = ~2.3 mV), and clear Fraunhofer patterns. The superconducting gap voltage of delta agrees well with the smaller gap in the multi-gap scenario. The results demonstrate that MgB2 has great promise for superconducting electronics that can be operated at T ~ 20 K.

cond-mat.supr-con↗
arXiv2004

New superconduting cuprates with no effective doping: T'-(La3+)2-x(RE3+)xCuO4

We report the synthesis of new superconducting cuprates T'-La2-xRExCuO4 (RE = Sm, Eu, Tb, Lu, and Y) using molecular beam epitaxy. The new superconductors have no effective dopant, at least nominally. The substitution of isovalent RE for La was essentially performed to stabilize the T' phase of La2CuO4 instead of the T phase. The maximum Tconset is ~ 25 K and Tczero is ~ 21 K. The keys to our discovery are (1) the preparation of high-crystalline-quality La-based T' films by low-temperature (~ 650C) thin film processes, and (2) more thorough removal of impurity oxygen at the apical site, which is achieved by the larger in-plane lattice constant (a0) of T'-La2-xRExCuO4 than other T'-Ln2CuO4 (Ln = Pr, Nd, Sm, Eu, Gd) with the aid of large surface-to-volume ratio of thin films.

cond-mat.supr-con↗
arXiv2003

New superconducting T'-(La3+)2-x(RE3+)xCuO4 with isovalent doping (RE = Sm, Eu, Tb, Lu, and Y)

We report the synthesis of new superconducting cuprates T'-La2-xRExCuO4 (RE = Sm, Eu, Tb, Lu, and Y) using molecular beam epitaxy. The new superconductors have no effective dopant, at least nominally. The substitution of isovalent RE for La was essentially performed to stabilize the T' phase of La2CuO4 instead of the T phase. The maximum Tconset is ~ 25 K and Tczero is ~ 21 K. The keys to our discovery are (1) the preparation of high-crystalline-quality La-based T' films by low-temperature (~650C) thin film processes, and (2) more thorough removal of impurity oxygen at the apical site, which is achieved by the larger in-plane lattice constant (a0) of T'-La2-xRExCuO4 than other T'-Ln2CuO4 (Ln = Pr, Nd, Sm, Eu, Gd) with the aid of large surface-to-volume ratio of thin films. The photoemission spectra suggest that the end member compounds of the T' system may not be a Mott insulator.

cond-mat.supr-con↗
arXiv2003

Doping dependence of the gap anisotropy in LCCO studied by millimeter-wave spectroscopy

We measure the penetration depth of optimally doped and underdoped La2-xCexCuO4 in the millimeter frequency domain (4 - 7 cm-1) and for temperatures 2 K < T < 300 K. The penetration depth as function of temperature reveals significant changes on electron doping. It shows quadratic temperature dependence in underdoped samples, but increases almost exponentially at optimal doping. Significant changes in the gap anisotropy (or even in the gap symmetry) may account for this transition.

cond-mat.supr-con↗
arXiv2003

Magnetic Penetration Depth Measurements of Pr$_{2-x}$Ce$_x$CuO$_{4-δ}$ Films on Buffered Substrates: Evidence for a Nodeless Gap

We report measurements of the inverse squared magnetic penetration depth, $λ^{-2}(T)$, in Pr$_{2-x}$Ce$_{x}$CuO$_{4-δ}$ ($0.115 \leq x \leq 0.152$) superconducting films grown on SrTiO$_3$ (001) substrates coated with a buffer layer of insulating Pr$_{2}$CuO$_{4}$. $λ^{-2}(0)$, $T_c$ and normal-state resistivities of these films indicate that they are clean and homogeneous. Over a wide range of Ce doping, $0.124\leq x \leq 0.144$, $λ^{-2}(T)$ at low $T$ is flat: it changes by less than 0.15% over a factor of 3 change in $T$, indicating a gap in the superconducting density of states. Fits to the first 5% decrease in $λ^{-2}(T)$ produce values of the minimum superconducting gap in the range of $0.29\leqΔ_{\rm min}/k_BT_c\leq1.01$.

cond-mat.supr-con↗
arXiv2003

Superconducting Density of States from the Magnetic Penetration Depth of Electron-Doped Cuprates La_{2-x}Ce_xCuO_{4-y} and Pr_{2-x}Ce_xCuO_{4-y}

From measurements of the magnetic penetration depth, $λ(T)$, from 1.6 K to $T_c$ in films of electron-doped cuprates La$_{2-x}$Ce$_x$CuO$_{4-y}$ and Pr$_{2-x}$Ce$_x$CuO$_{4-y}$ we obtain the normalized density of states, $N_s(E)$ at T=0 by using a simple model. In this framework, the flat behavior of $λ^{-2}(T)$ at low $T$ implies $N_s(E)$ is small, possibly gapped, at low energies. The upward curvature in $λ^{-2}(T)$ near $T_c$ seen in overdoped films implies that superfluid comes from an anomalously small energy band within about $3k_BT_c$ of the Fermi surface.

cond-mat.supr-con↗
arXiv2002

Far-infrared and submillimeter-wave conductivity in electron-doped cuprate La_{2-x}Ce_xCuO_4

We performed far-infrared and submillimeter-wave conductivity experiments in the electron-doped cuprate La_{2-x}Ce_xCuO_4 with x = 0.081 (underdoped regime, T_c = 25 K). The onset of the absorption in the superconducting state is gradual in frequency and is inconsistent with the isotropic s-wave gap. Instead, a narrow quasiparticle peak is observed at zero frequency and a second peak at finite frequencies, clear fingerprints of the conductivity in a d-wave superconductor. A far-infrared conductivity peak can be attributed to 4Delta_0, or to 2Delta_0 + Delta_spin, where Delta_spin is the resonance frequency of the spin-fluctuations. The infrared conductivity as well as the suppression of the quasiparticle scattering rate below T_c are qualitatively similar to the results in the hole-doped cuprates.

cond-mat.supr-con↗
arXiv2002

In-situ growth of superconducting MgB2 thin films by molecular beam epitaxy

The in-situ growth of superconducting MgB2 thin films was examined from various perspectives. The paper discusses (1) growth temperature, (2) the effect of excess Mg, (3) the effect of residual gas during growth, (4) the effect of in-situ annealing, (5) thickness dependence and (6) the effect of substrates. Our results provide a guide to the preparation of high-quality superconducting MgB2 films for potential electronics applications.

cond-mat.supr-con↗
arXiv2002

Synthesis and photoemission study of as-grown superconducting MgB2 thin films

As-grown superconducting thin films of MgB2 were prepared by molecular beam epitaxy (MBE), and studied by X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS). Only films prepared at temperatures between 150 and 320 deg. showed superconductivity. A best TC onset of 36 K with a sharp transition width of -1 K was obtained although the film crystallinity was poor. The in-situ photoelectron spectra obtained on the surfaces of the MBE grown MgB2 films were free from dirt peaks. XPS revealed that the binding energy of the Mg 2p levels in MgB2 is close to that of metallic Mg, and the binding energy of B 1s is close to that of transition-metal diborides. The valence UP spectra showed a clear Fermi edge although the density of states (DOS) at EF is low and the major components of the valence band are located between 5 and 11 eV.

cond-mat.supr-con↗
arXiv2002

Tunnel junctions on as-grown superconducting MgB2 thin films

We demonstrate that good superconductor/insulator/normal-metal tunnel junctions can be fabricated on as-grown superconducting MgB2 thin films. The as-grown films were prepared by coevaporation at low growth temperatures of around 280deg. The insulating barrier was formed by an Mg overlayer, which is subsequently oxidized in air. The tunneling spectra for Au/MgOx/MgB2 junctions showed a reproducible and well-defined superconducting gap (delta= ~ 2.5 meV). The resultant 2delta/ kBTc was significantly smaller than the predicted BCS value of 3.52.

cond-mat.supr-con↗
arXiv2002

Phase control of La2CuO4 in thin-film synthesis

The lanthanum copper oxide, La2CuO4, which is an end member of the prototype high-Tc superconductors (La,Sr)2CuO4 and (La,Ba)2CuO4, crystallizes in the "K2NiF4" structure in high-temperature bulk synthesis. The crystal chemistry, however, predicts that La2CuO4 is at the borderline of the K2NiF4 stability and that it can crystallize in the Nd2CuO4 structure at low synthesis temperatures. In this article we demonstrate that low-temperature thin-film synthesis actually crystallizes La2CuO4 in the Nd2CuO4 structure. We also show that the phase control of "K2NiF4"-type La2CuO4 versus "Nd2CuO4"-type La2CuO4 can be achieved by varying the synthesis temperature and using different substrates.

cond-mat.supr-con↗
arXiv2002

Phase control in La-214 epitaxial thin films

The lanthanide (Ln) copper oxides of the general chemical formula Ln2CuO4 take two different crystal structures: K2NiF4(T) and Nd2CuO4(T'). La2CuO4 takes the T structure by high-temperature bulk processes. The "thermal expansion mismatch" between the La-O and Cu-O bonds predicts that the T' phase of La2CuO4 can be stabilized at synthesis temperatures below 425 deg. Such low synthesis temperatures are difficult to access by bulk processes, but easy by thin-film processes. We have surveyed growth parameters in molecular beam epitaxy, and succeeded in the selective stabilization of T- and T'-La2CuO4. From our observations, it turns out that the growth temperature as well as the substrate play a crucial role in the selective stabilization: the T' structure is stabilized at low growth temperatures (< 600 deg.) and with substrates of a < 3.70 Ang or a > 3.90 Ang, while the T structure is stabilized at high growth temperatures (> 650 deg) or with substrates of a ~ 3.70 - 3.85 Ang. We have also been attempting hole (Ca, Sr, and Ba) and electron (Ce) doping into both of T- and T'-La2CuO4. In T-La2CuO4, hole doping produces the well-known LSCO and LBCO. Surprisingly, contrary to the empirical law, electron doping is also possible up to x ~ 0.06 - 0.08, although the films do not show superconductivity. In T'-La2CuO4, electron doping produces superconducting T'-(La,Ce)2CuO4 with Tc ~ 30 K, although hole doping has as yet been unsuccessful.

cond-mat.supr-con↗
arXiv2002

On the peak in the far-infrared conductivity of strongly anisotropic cuprates

We investigate the far-infrared and submillimeter-wave conductivity of electron-doped La_(2-x)Ce_xCuO_4 tilted 1 degree off from the ab-plane. The effective conductivity measured for this tilt angle reveals an intensive peak at finite frequency (ν~ 50 cm{-1}) due to a mixing of the in-plane and out-of-plane responses. The peak disappears for the pure in-plane response and transforms to the Drude-like contribution. Comparative analysis of the mixed and the in-plane contributions allows to extract the c-axis conductivity which shows a Josephson plasma resonance at 11.7 cm{-1} in the superconducting state.

cond-mat.supr-con↗
arXiv2002

Evidence for a Nodeless Gap from the Superfluid Density of Optimally Doped Pr_{1.855}Ce_{0.145}CuO_{4-y} Films

We present measurements of the ab-plane magnetic penetration depth, λ(T), in five optimally doped Pr_{1.855}Ce_{0.145}CuO_{4-y} films for 1.6 K \leq T \leq T_c \sim 24 K. Low resistivities, high superfluid densities n_s(T)\propto λ^{-2}(T), high T_c's, and small transition widths are reproducible and indicative of excellent film quality. For all five films, λ^{-2}(T)/λ^{-2}(0) at low T is well fitted by an exponential temperature dependence with a gap, Δ_{min}, of 0.85 k_B T_c. This behavior is consistent with a nodeless gap and is incompatible with d-wave superconductivity.

cond-mat.supr-con↗
arXiv2002

Evidence for a Transition in the Pairing Symmetry of the Electron-Doped Cuprates La_{2-x}Ce_xCuO_{4-y} and Pr_{2-x}Ce_xCuO_{4-y}

We present measurements of the magnetic penetration depth, λ^{-2}(T), in Pr_{2-x}Ce_{x}CuO_{4-y} and La_{2-x}Ce_{x}CuO_{4-y} films at three Ce doping levels, x, near optimal. Optimal and overdoped films are qualitatively and quantitatively different from underdoped films. For example, λ^{-2}(0) decreases rapidly with underdoping but is roughly constant above optimal doping. Also, λ^{-2}(T) at low T is exponential at optimal and overdoping but is quadratic at underdoping. In light of other studies that suggest both d- and s-wave pairing symmetry in nominally optimally doped samples, our results are evidence for a transition from d- to s-wave pairing near optimal doping.

cond-mat.supr-con↗