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M. Opel

Publications and source records attributed to M. Opel.

At least 19 recordsLinked to original sources

Phonon anomalies in FeS

We present results from light scattering experiments on tetragonal FeS with the focus placed on lattice dynamics. We identify the Raman active A1g and B1g phonon modes, a second order scattering process involving two acoustic phonons, and contributions from potentially defect-induced scattering. The temperature dependence between 300 and 20K of all observed phonon energies is governed by the lattice contraction. Below 20K the phonon energies increase by 0.5-1 cm$^{-1}$ thus indicating putative short range magnetic order. Along with the experiments we performed lattice-dynamical simulations and a symmetry analysis for the phonons and potential overtones and find good agreement with the experiments. In particular, we argue that the two-phonon excitation observed in a gap between the optical branches becomes observable due to significant electron-phonon interaction.

cond-mat.supr-con

Converse Magnetoelectric Effects in Fe3O4/BaTiO3 Multiferroic Hybrids

The quantitative understanding of converse magnetoelectric effects, i.e., the variation of the magnetization as a function of an applied electric field, in extrinsic multiferroic hybrids is a key prerequisite for the development of future spintronic devices. We present a detailed study of the strain-mediated converse magnetoelectric effect in ferrimagnetic Fe3O4 thin films on ferroelectric BaTiO3 substrates at room temperature. The experimental results are in excellent agreement with numerical simulation based on a two-region model. This demonstrates that the electric field induced changes of the magnetic state in the Fe3O4 thin film can be well described by the presence of two different ferroelastic domains in the BaTiO3 substrate, resulting in two differently strained regions in the Fe3O4 film with different magnetic properties. The two-region model allows to predict the converse magnetoelectric effects in multiferroic hybrid structures consisting of ferromagnetic thin films on ferroelastic substrates.

cond-mat.mtrl-sci

Spin Hall Magnetoresistance Induced by a Non-Equilibrium Proximity Effect

We report anisotropic magnetoresistance in Pt|Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and Y3Fe5O12, excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it "spin Hall magnetoresistance."

cond-mat.mtrl-sci

Magnetic interference patterns in 0-Pi SIFS Josephson junctions: effects of asymmetry between 0 and Pi regions

We present a detailed analysis of the dependence of the critical current I_c on the magnetic field B of 0, Pi, and 0-Pi superconductor-insulator-ferromagnet-superconductor Josephson junctions. I_c(B) of the 0 and Pi junction closely follows a Fraunhofer pattern, indicating a homogeneous critical current density j_c(x). The maximum of I_c(B) is slightly shifted along the field axis, pointing to a small remanent in-plane magnetization of the F-layer along the field axis. I_c(B) of the 0-Pi junction exhibits the characteristic central minimum. I_c however has a finite value here, due to an asymmetry of j_c in the 0 and Pi part. In addition, this I_c(B) exhibits asymmetric maxima and bumped minima. To explain these features in detail, flux penetration being different in the 0 part and the Pi part needs to be taken into account. We discuss this asymmetry in relation to the magnetic properties of the F-layer and the fabrication technique used to produce the 0-Pi junctions.

cond-mat.supr-con

Giant magnetic anisotropy changes in Sr2CrReO6 thin films on BaTiO3

The integration of ferromagnetic and ferroelectric materials into hybrid heterostructures yields multifunctional systems with improved or novel functionality. We here report on the structural, electronic and magnetic properties of the ferromagnetic double perovskite Sr2CrReO6, grown as epitaxial thin film onto ferroelectric BaTiO3. As a function of temperature, the crystal-structure of BaTiO3 undergoes phase transitions, which induce qualitative changes in the magnetic anisotropy of the ferromagnet. We observe abrupt changes in the coercive field of up to 1.2T along with resistance changes of up to 6.5%. These results are attributed to the high sensitivity of the double perovskites to mechanical deformation.

cond-mat.mtrl-sci

Epitaxial growth and magnetic properties of Sr2CrReO6 thin films

The double perovskite Sr2CrReO6 is an interesting material for spintronics, showing ferrimagnetism up to 635 K with a predicted high spin polarization of about 86%. We fabricated Sr2CrReO6 epitaxial films by pulsed laser deposition on (001)-oriented SrTiO3 substrates. Phase-pure films with optimum crystallographic and magnetic properties were obtained by growing at a substrate temperature of 700 degree C in pure O2 of 6.6x10-4 mbar. The films are c-axis oriented, coherently strained, and show less than 20% anti-site defects. The magnetization curves reveal high saturation magnetization of 0.8 muB per formula unit and high coercivity of 1.1 T, as well as a strong magnetic anisotropy.

cond-mat.mtrl-sci

Voltage controlled inversion of magnetic anisotropy in a ferromagnetic thin film at room temperature

The control of magnetic properties by means of an electric field is an important aspect in magnetism and magnetoelectronics. We here utilize magnetoelastic coupling in ferromagnetic/piezoelectric hybrids to realize a voltage control of magnetization orientation at room temperature. The samples consist of polycrystalline nickel thin films evaporated onto piezoelectric actuators. The magnetic properties of these multifunctional hybrids are investigated at room temperature as a function of the voltage controlled stress exerted by the actuator on the Ni film. Ferromagnetic resonance spectroscopy shows that the magnetic easy axis in the Ni film plane is rotated by 90 degree upon changing the polarity of the voltage Vp applied to the actuator. In other words, the in-plane uniaxial magnetic anisotropy of the Ni film can be inverted via the application of an appropriate voltage Vp. Using SQUID magnetometry, the evolution of the magnetization vector is recorded as a function of Vp and of the external magnetic field. Changing Vp allows to reversibly adjust the magnetization orientation in the Ni film plane within a range of approximately 70 degree. All magnetometry data can be quantitatively understood in terms of the magnetic free energy determined from the ferromagnetic resonance experiments. These results demonstrate that magnetoelastic coupling in hybrid structures indeed is a viable option to control magnetization orientation in technologically relevant ferromagnetic thin films at room temperature.

cond-mat.mtrl-sci

All Oxide Ferromagnet/Semiconductor Epitaxial Heterostructures

Oxide based ferromagnet/semiconductor heterostructures offer substantial advantages for spin electronics. We have grown (111) oriented Fe3O4 thin films and Fe3O4/ZnO heterostructures on ZnO(0001) and Al2O3(0001) substrates by pulsed laser deposition. High quality crystalline films with mosaic spread as small as 0.03 degree, sharp interfaces, and rms surface roughness of 0.3 nm were achieved. Magnetization measurements show clear ferromagnetic behavior of the magnetite layers with a saturation magnetization of 3.2 muB/f.u. at 300 K. Our results demonstrate that the Fe3O4/ZnO system is an intriguing and promising candidate for the realization of multi-functional heterostructures.

cond-mat.mtrl-sci

Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching

We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we quantify the magnetic anisotropy as a function of the voltage V_p applied to the piezoelectric actuator using anisotropic magnetoresistance techniques. We find that the easy axis of the strain-induced uniaxial magnetic anisotropy contribution can be inverted from the [110] to the [1-10] direction via the application of appropriate voltages V_p. At T=5K the magnetoelastic term is a minor contribution to the magnetic anisotropy. Nevertheless, we show that the switching fields of rho(H) loops are shifted as a function of V_p at this temperature. At 50K - where the magnetoelastic term dominates the magnetic anisotropy - we are able to tune the magnetization orientation by about 70 degree solely by means of the electrical voltage V_p applied. Furthermore, we derive the magnetostrictive constant lambda_111 as a function of temperature and find values consistent with earlier results. We argue that the piezo-voltage control of magnetization orientation is directly transferable to other ferromagnetic/piezoelectric hybrid structures, paving the way to innovative multifunctional device concepts. As an example, we demonstrate piezo-voltage induced irreversible magnetization switching at T=40K, which constitutes the basic principle of a nonvolatile memory element.

cond-mat.mtrl-sci

Suppression of hole-mediated ferromagnetism in GaMnP by hydrogen

We report the successful passivation of the Mn acceptors in GaMnP upon exposure to a remote dc hydrogen plasma. The as-grown films are non-metallic and ferromagnetic with a Curie temperature of T_C=55K. After hydrogenation the sample resistivity increases by approximately three orders of magnitude at room temperature and six orders of magnitude at 25 K. Furthermore, the hydrogenated samples are paramagnetic, which is evidenced by a magnetization curve at 5 K that is best described by a Brillouin function with g=2 and J=5/2 expected for Mn atoms in the 3d^5 configuration. These observations unambiguously proof that the ferromagnetism is carrier-mediated also in GaMnP.

cond-mat.mtrl-sci

Magnetocrystalline anisotropy and magnetization reversal in GaMnP synthesized by ion implantation and pulsed-laser melting

We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of GaMnP with x=0.042. The contributions to the magnetic anisotropy were determined by measuring the angular- and the temperature-dependencies of the FMR resonance fields and by superconducting quantum interference device magnetometry. The largest contribution to the anisotropy is a uniaxial component perpendicular to the film plane; however, a negative contribution from cubic anisotropy is also found. Additional in-plane uniaxial components are observed at low temperatures, which lift the degeneracy between the in-plane [011] and [01-1] directions as well as between the in-plane [010] and [001] directions. Near T=5K, the easy magnetization axis is close to the in-plane [01-1] direction. All anisotropy parameters decrease with increasing temperature and disappear above the Curie temperature T_C. A consistent picture of the magnetic anisotropy of ferromagnetic GaMnP emerges from the FMR and magnetometry data. The latter can be successfully modeled when both coherent magnetization rotation and magnetic domain nucleation are considered.

cond-mat.mtrl-sci

Magnetic and structural properties of GeMn films: precipitation of intermetallic nanomagnets

We present a comprehensive study relating the nanostructure of Ge_0.95Mn_0.05 films to their magnetic properties. The formation of ferromagnetic nanometer sized inclusions in a defect free Ge matrix fabricated by low temperature molecular beam epitaxy is observed down to substrate temperatures T_S as low as 70 deg. Celsius. A combined transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS) analysis of the films identifies the inclusions as precipitates of the ferromagnetic compound Mn_5Ge_3. The volume and amount of these precipitates decreases with decreasing T_S. Magnetometry of the films containing precipitates reveals distinct temperature ranges: Between the characteristic ferromagnetic transition temperature of Mn_5Ge_3 at approximately room temperature and a lower, T_S dependent blocking temperature T_B the magnetic properties are dominated by superparamagnetism of the Mn_5Ge_3 precipitates. Below T_B, the magnetic signature of ferromagnetic precipitates with blocked magnetic moments is observed. At the lowest temperatures, the films show features characteristic for a metastable state.

cond-mat.mtrl-sci

Spin-glass-like behavior of Ge:Mn

We present a detailed study of the magnetic properties of low-temperature-molecular-beam-epitaxy grown Ge:Mn dilute magnetic semiconductor films. We find strong indications for a frozen state of Ge_{1-x}Mn_{x}, with freezing temperatures of T_f=12K and T_f=15K for samples with x=0.04 and x=0.2, respectively, determined from the difference between field-cooled and zero-field-cooled magnetization. For Ge_{0.96}Mn_{0.04}, ac susceptibility measurements show a peak around T_f, with the peak position T'_f shifting as a function of the driving frequency f by Delta T_f' / [T_f' Delta log f] ~ 0.06, whereas for sample Ge_{0.8}Mn_{0.2} a more complicated behavior is observed. Furthermore, both samples exhibit relaxation effects of the magnetization after switching the magnitude of the external magnetic field below T_f which are in qualitative agreement with the field- and zero-field-cooled magnetization measurements. These findings consistently show that Ge:Mn exhibits a frozen magnetic state at low temperatures and that it is not a conventional ferromagnet.

cond-mat.mtrl-sci

X-ray magnetic circular dichroism study of Re 5d magnetism in Sr2CrReO6

We have measured Re 5d spin and orbital magnetic moments in the ferrimagnetic double perovskite Sr2CrReO6 by X-ray magnetic circular dichroism at the L_{2,3} edges. In fair agreement with recent band-structure calculations [Vaitheeswaran et. al., Ref 1], at the Re site a large 5d spin magnetic moment of -0.68 mu_B and a considerable orbital moment of +0.25 mu_B have been detected. We found that the Curie temperature of the double perovskites A2BB'O6 scales with the spin magnetic moment of the 'non-magnetic' B' ion.

cond-mat.mtrl-sci

Magnetic moments of W 5d in Ca2CrWO6 and Sr2CrWO6 double perovskites

We have investigated the magnetic moment of the W ion in the ferrimagnetic double perovskites Sr2CrWO6 and Ca2CrWO6 by X-ray magnetic circular dichroism (XMCD) at the W L(2,3) edges. In both compounds a finite negative spin and positive orbital magnetic moment was detected. The experimental results are in good agreement with band-structure calculations for (Sr/Ca)2CrWO6 using the full-potential linear muffin-tin orbital method. It is remarkable, that the magnetic ordering temperature, TC, is correlated with the magnetic moment at the 'non-magnetic' W atom.

cond-mat.mtrl-sci

Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier

Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier showed reproducibly a tunneling magnetoresistance (TMR) effect at room temperature of up to 5% with almost ideal switching behavior. This number only partially reflects the intrinsic high spin polarization of Fe3O4. It is considerably decreased due to an additional series resistance within the junction. Only SiO2 and Al2O(3-x) barriers provide magnetically decoupled electrodes as necessary for sharp switching. The observed decrease of the TMR effect as a function of increasing temperature is due to a decrease in spin polarization and an increase in spin-scattering in the barrier. Among the oxide half-metals magnetite has the potential to enhance the performance of TMR based devices.

cond-mat.mtrl-sci

Study of Magnetic Properties of A_2B^'NbO_6 (A=Ba,Sr, (BaSr): and B^'=Fe and Mn) double perovskites

We have studied the magnetic properties of Ba_2FeNbO_6 and Ba_2MnNbO_6. it is seen that Ba_2FeNbO_6 is an antiferromagnet with a weak ferromagnetic behaviour at 5K while Ba_2MnNbO_6 shows two magnetic transitions one at 45 K and the other at 12K. Electron spin resonance (ESR) measurements at room temperature show that the Mn compound does not show any Jahn-Teller distortion. It is also seen that the Neel temperature of the A_2FeNbO_6 (A=Ba,Sr, BaSr) compounds do not vary significantly. However variations in the average A-site ionic radius influence the formation of short range correlations that persist above T_N.

cond-mat.str-el

Hall effect in Fe$_3$O$_4$ epitaxial thin films

Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick films, the saturation magnetization and conductivity are respectively 453 emu/cm^3 and 225 1/(Ohm cm) at room temperature. The Verwey transition is at 117 K. The Hall effect indicates an electron concentration corresponding to 0.22 electrons per formula unit at room temperature. Normal and anomalous Hall effect both have a negative sign.

cond-mat.mtrl-sci