arXiv subjects

M. Opel

Publications and source records attributed to M. Opel.

25 records · Page 2Linked to original sources

arXiv2003

Epitaxy of Fe3O4 on Si(001) by pulsed laser deposition using a TiN/MgO buffer layer

Epitaxy of oxide materials on silicon (Si) substrates is of great interest for future functional devices using the large variety of physical properties of the oxides as ferroelectricity, ferromagnetism, or superconductivity. Recently, materials with high spin polarization of the charge carriers have become interesting for semiconductor-oxide hybrid devices in spin electronics. Here, we report on pulsed laser deposition of magnetite (Fe3O4) on Si(001) substrates cleaned by an in situ laser beam high temperature treatment. After depositing a double buffer layer of titanium nitride (TiN) and magnesium oxide (MgO), a high quality epitaxial magnetite layer can be grown as verified by RHEED intensity oscillations and high resolution x-ray diffraction.

cond-mat.mtrl-sci↗

arXiv2002

Epitaxial growth and transport properties of Sr$_2$CrWO$_6$ thin films

We report on the preparation and characterization of epitaxial thin films of the double-perovskite Sr$_2$CrWO$_6$ by Pulsed Laser Deposition (PLD). On substrates with low lattice mismatch like SrTiO$_3$, epitaxial Sr$_2$CrWO$_6$ films with high crystalline quality can be grown in a molecular layer-by-layer growth mode. Due to the similar ionic radii of Cr and W, these elements show no sublattice order. Nevertheless, the measured Curie temperature is well above 400 K. Due to the reducing growth atmosphere required for double perovskites, the SrTiO$_3$ substrate surface undergoes an insulator-metal transition impeding the separation of thin film and substrate electric transport properties.

cond-mat.str-el↗

arXiv2002

Observation of an unconventional metal-insulator transition in overdoped CuO_2 compounds

The electron dynamics in the normal state of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ is studied by inelastic light scattering over a wide range of doping. A strong anisotropy of the electron relaxation is found which cannot be explained by single-particle properties alone. The results strongly indicate the presence of an unconventional quantum-critical metal-insulator transition where "hot" (antinodal) quasiparticles become insulating while "cold" (nodal) quasiparticles remain metallic. A phenomenology is developed which allows a quantitative understanding of the Raman results and provides a scenario which links single- and many-particle properties.

cond-mat.supr-con↗

arXiv2001

Doping dependence of the electronic Raman spectra in cuprates

We report electronic Raman scattering measurements on Bi$_2$Sr$_2$(Y$_{1-x}$Ca$_x$)Cu$_2$O$_{8+δ}$ single crystals at different doping levels. The dependence of the spectra on doping and on incoming photon energy is analyzed for different polarization geometries, in the superconducting and in the normal state. We find the scaling behavior of the superconductivity pair-breaking peak with the carrier concentration to be very different in B$_{1g}$ and B$_{2g}$ geometries. Also, we do not find evidence of any significant variation of the lineshape of the spectra in the overdoped region in both symmetries, while we observe a reduction of the intensity in B$_{2g}$ upon decreasing photon energies. The normal state data are analyzed in terms of the memory-function approach. The quasiparticle relaxation rates in the two symmetries display a dependence on energy and temperature which varies with the doping level.

cond-mat.supr-con↗

arXiv1999

Carrier relaxation, pseudogap, and superconducting gap in high-Tc cuprates: A Raman scattering study

We describe results of electronic Raman-scattering experiments in differently doped single crystals of Y-123 and Bi-2212. The comparison of AF insulating and metallic samples suggests that at least the low-energy part of the spectra originates predominantly from excitations of free carriers. We therefore propose an analysis of the data in terms of a memory function approach. Dynamical scattering rates and mass-enhancement factors for the carriers are obtained. In B2g symmetry the Raman data compare well to the results obtained from ordinary and optical transport. For underdoped materials the dc scattering rates in B1g symmetry become temperature independent and considerably larger than in B2g symmetry. This increasing anisotropy is accompanied by a loss of spectral weight in B2g symmetry in the range between the superconducting transition at Tc and a characteristic temperature T* of order room temperature which compares well with the pseudogap temperature found in other experiments. The energy range affected by the pseudogap is doping and temperature independent. The integrated spectral loss is approximately 25% in underdoped samples and becomes much weaker towards higher carrier concentration. In underdoped samples, superconductivity related features in the spectra can be observed only in B2g symmetry. The peak frequencies scale with Tc. We do not find a direct relation between the pseudogap and the superconducting gap.

cond-mat.supr-con↗

arXiv1998

Physical origin of the buckling in CuO$_2$: Electron-phonon coupling and Raman spectra

It is shown theoretically that the buckling of the CuO$_{2}$ planes in certain cuprate systems can be explained in terms of an electric field across the planes which originates from different valences of atoms above and below the plane. This field results also in a strong coupling of the Raman-active out-of-phase vibration of the oxygen atoms ($B_{1g}$ mode) to the electronic charge transfer between the two oxygens in the CuO$_{2}$ plane. Consequently, the electric field can be deduced from the Fano-type line shape of the $B_{1g}$ phonon. Using the electric field estimated from the electron-phonon coupling the amplitude of the buckling is calculated and found to be in good agreement with the structural data. Direct experimental support for the idea proposed is obtained in studies of YBa$_{2}$Cu$_{3}$O$_{6+x}$ and Bi$_{2}$Sr$_{2}$(Ca$_{1-x}$Y$_{x}$)Cu$_{2}$O$_{8}$ with different oxygen and yttrium doping, respectively, including antiferromagnetic samples. In the latter compound, symmetry breaking by replacing Ca partially by Y leads to an enhancement of the electron-phonon coupling by an order of magnitude.

cond-mat.supr-con↗

arXiv1998

Enhanced Electron-Phonon Coupling and its Irrelevance to High T$_{c}$ Superconductivity

It is argued that the origin of the buckling of the CuO$_{2}$ planes in certain cuprates as well as the strong electron-phonon coupling of the $B_{1g}$ phonon is due to the electric field across the planes induced by atoms with different valence above and below. The magnitude of the electric field is deduced from new Raman results on YBa$_{2}$Cu$_{3}$O$_{6+x}$ and Bi$_{2}$Sr$_{2}$(Ca$_{1-x}$Y$_{x}$)Cu$_{2}$O$_{8}$ with different O and Y doping, respectively. In the latter case it is shown that the symmetry breaking by replacing Ca partially by Y enhances the coupling by an order of magnitude, while the superconducting $T_c$ drops to about two third of its original value.

cond-mat.supr-con↗