arXiv subjects

M. Putti

Publications and source records attributed to M. Putti.

86 records · Page 5Linked to original sources

arXiv2003

Effect of two bands on critical fields in MgB2 thin films with various resistivity values

Upper critical fields of four MgB2 thin films were measured up to 28 Tesla at Grenoble High Magnetic Field Laboratory. The films were grown by Pulsed Laser Deposition and showed critical temperatures ranging between 29.5 and 38.8 K and resistivities at 40 K varying from 5 to 50 mWcm. The critical fields in the perpendicular direction turned out to be in the 13-24 T range while they were estimated to be in 42-57 T the range in ab-planes. In contrast to the prediction of the BCS theory, we did not observe any saturation at low temperatures: a linear temperature dependence is exhibited even at lowest temperatures at which we made the measurements. Moreover, the critical field values seemed not to depend on the normal state resistivity value. In this paper, we analyze these data considering the multiband nature of superconductivity in MgB2 We will show how the scattering mechanisms that determine critical fields and resistivity can be different.

cond-mat.supr-con↗

arXiv2003

High critical fields in MgB2 thin films with various resistivity values

In this paper, we analyze the upper critical field of four MgB2 thin films, with different resistivity (between 5 to 50 mWcm) and critical temperature (between 29.5 to 38.8 K), measured up to 28 Tesla. In the perpendicular direction the critical fields vary from 13 to 24 T and we can estimate 42-57 T range in other direction. We observe linear temperature dependence even at low temperatures without saturation, in contrast to BCS theory. Considering the multiband nature of the superconductivity in MgB2, we conclude that two different scattering mechanisms influence separately resistivity and critical field. In this framework, resistivity values have been calculated from Hc2(T) curves and compared with the measured ones.

cond-mat.supr-con↗

arXiv2003

Thermal properties of MgB2: the effect of disorder on gap amplitudes and relaxation times of p and s bands

We present thermal conductivity and specific heat measurements on MgB2 and Mg-AlB2 samples. Thermal properties have been analysed by using a two-gap model in order to estimate the gap amplitudes, D(0)p and D(0)s and the intra-band scattering rates, Gss and Gpp. As a function of Al doping and disorder D(0)s rapidly decreases, while D(0)p is rather constant. Gss and Gpp are increased by the disorder, being Gpp more affected than Gss.

cond-mat.supr-con↗

arXiv2003

Upper critical fields of MgB2 thin films

Critical fields of four MgB2 thin films with a normal state resistivity ranging from 5 to 50 mWcm and Tc from 29.5 to 38.8 K were measured up to 28 T. Hc2(T) curves present a linear behavior towards low temperatures. Very high critical field values have been found, up to 24 T along the c-axis and 57 T in the basal plane not depending on the normal state resistivity values. In this paper, critical fields will be analyzed taking into account the multiband nature of MgB2; we will show that resistivity and upper critical fields can be ascribed to different scattering mechanisms.

cond-mat.supr-con↗

arXiv2002

Angular dependence of magnetoresistivity in c-oriented MgB2 thin film

The anisotropy of MgB2 is still under debate: its value, strongly dependent on the sample and on the measuring method, ranges between 1.2 and 13. In this work we present our results on a MgB2 c-oriented superconducting thin film. To evaluate the anisotropy, we followed two different approaches. Firstly, magnetoresistivity was measured as a function of temperature at selected magnetic fields applied both parallel and perpendicular to the c-axis; secondly, we measured magnetoresistivity at selected temperatures and magnetic fields, varying the angle q between the magnetic field and the c-axis. The anisotropy estimated from the ratio between the upper critical fields parallel and perpendicular to the c-axis and the one obtained in the framework of the scaling approach within the anisotropic Ginzburg-Landau theory are different but show a similar trend in the temperature dependence. The obtained results are compared and discussed in the light of the two-band nature of MgB2. A comparison between critical fields in thin films and single crystal is also performed.

cond-mat.supr-con↗

arXiv2002

Thermal conductivity of MgB$_{2}$ in the superconducting state

We present thermal conductivity measurements on very pure and dense bulk samples, as indicated by residual resistivity values as low as 0.5 mW cm and thermal conductivity values higher than 200 W/mK. In the normal state we found that the Wiedemann Franz law, in its generalized form, works well suggesting that phonons do not contribute to the heat transport. The thermal conductivity in the superconducting state has been analysed by using a two-gap model. Thank to the large gap anisotropy we were able to evaluate quantitatively intraband scattering relaxation times of $π$ and $σ$ bands, which depend on the disorder in different way; namely, as the disorder increases, it reduces more effectively the relaxation times of $π$ than of $σ$ bands, as suggested by a recent calculation [1].

cond-mat.supr-con↗

arXiv2002

Two-band effects in transport properties of MgB2

We present resistivity and thermal conductivity measurements on bulk samples, prepared either by a standard method or by a one-step technique. The latter samples, due to their high density and purity, show residual resistivity values as low as 0.5 mW cm and thermal conductivity values as high as 215 W/mK, higher than the single crystal ones. Thermal and electrical data of all the samples are analysed in the framework of the Bloch-Gruneisen equation giving reliable parameter values. In particular the temperature resitivity coefficient, obtained both from resistivity and thermal conductivity, in the dirty sample comes out ten time larger than in the clean ones. This result supports the hypothesis of ref. [1] that p and s bands conduct in parallel, prevailing p conduction in clean samples and s conduction in dirty samples .

cond-mat.supr-con↗

arXiv2001

Synthesis and characterization of superconducting RuSr2GdCu2O8

We report on structural, electrical and magnetic properties of RuSr2GdCu2O8 samples made by systematic synthesis work so that they differ from one onether in number of annealings and sintering temperature. Our aim is to highlight the different behaviours as a consequence of the thermal treatments. In particular, we deal with the onset of superconductivity in relation to the homogenisation process, and its influence on resistivity, structural and magnetic ordering. Finally, the problems related to the magnetic measurements due to the superimposition of different magnetic states are examined.

cond-mat.supr-con↗

arXiv2001

Anisotropy in c-oriented MgB2 thin films grown by Pulsed Laser Deposition

The electronic anisotropy in MgB2, is still a not completely clear topic; high quality c-oriented films are suitable systems to investigate this property. In this work we present our results on MgB2 superconducting thin films grown on MgO and sapphire substrates. The films are deposited in high vacuum, at room temperature, by Laser Ablation, starting from two different targets: pure Boron and stoichiometric MgB2. In both cases, to obtain and crystallize the superconducting phase, an ex-situ annealing in magnesium vapor is needed. The films were characterized by Synchrotron radiation diffraction measurements; the films turned out to be strongly c-oriented, with the c-axis perpendicular to the film surface and an influence of the substrate on crystallographic parameters is observed. Resisivity measurements with the magnetic field perpendicular and parallel directions to the film surface evidenced an anisotropic upper critical field behavior. The Hc2 ratios (h) resulted in the range 1.2-1.8; this difference will be discussed also in comparison with the literature data.

cond-mat.supr-con↗

arXiv2001

Transport properties of c-oriented MgB2 thin films grown by Pulsed Laser Deposition

The electronic anisotropy in MgB2, which arises from its layered crystal structure is not completely clear until now. High quality c-oriented films offer the opportunity of studying such property. MgB2 thin films were deposited by using two methods both based on room temperature precursor deposition (by Pulsed Laser Ablation) and ex-situ annealing in Mg atmosphere. The two methods differ for the starting targets: stoichiometric MgB2 in one case and Boron in the other. The two films presented in this paper are grown by means of the two techniques on MgO substrates and are both c-oriented; they present TC values of 31.5 and 37.4 K respectively. Upper critical field measurements, up to 9T, with the magnetic field in perpendicular and parallel directions in respect to the film surface evidenced anisotropy ratios of 1.8 and 1.4 respectively. In this paper we will discuss this remarkable and surprising difference also in comparison with the literature data.

cond-mat.supr-con↗

arXiv2001

Transport properties of MgB2

In this paper we present the resistivity, the Seebeck effect, and the thermal conductivity measurements on a MgB2 sintered sample. Such transport properties highlight the role of the junctions between the grains to a different extent. In particular, the temperature dependence of resistivity may be explained with the assumption that grain boundaries have a resistance, independent of temperature, in series with the resistance of grains. Also the behaviour of the Seebeck effect, as long as the scattering at the grain boundaries is elastic, is not affected at all by granularity. Thus, the thermopower can be a useful tool to provide information on the electronic structure. On the other hand, the grain boundary resistance affects the thermal conductivity strongly, masking the superconducting transition completely.

cond-mat.supr-con↗

arXiv2001

Electron transport properties of MgB2 in the normal state

We have measured the resistivity and the Seebeck coefficient of a MgB2 sintered sample. The temperature dependence of resistivity is fitted well by a generalized Bloch-Gruneisen equation with a Debye temperature of 1050 K. The Seebeck coefficient is given by the sum of a diffusive and a phonon drag term and the behavior in the temperature region $% Tc<T<0.1Θ_{R}$ follows a relationship $AT+BT^{3}$ where the two terms are proportional to the electron and to the phonon specific heat, respectively. The phonon drag term, here emphasized for the first time, is rather large, indicating a strong electron-phonon interaction. The diffusive term is positive and increases with Al doping. The comparison of the experimental values with calculations including precise electronic structure suggests that $σ$ bands give the main contribution to the Seebeck effect.

cond-mat.supr-con↗

arXiv2001

In-situ Magnesium Diboride Superconducting Thin Films grown by Pulsed Laser Deposition

Superconducting thin films of MgB2 were deposited by Pulsed Laser Deposition on magnesium oxide and sapphire substrates. Samples grown at 450C in an argon buffer pressure of about 10-2 mbar by using a magnesium enriched target resulted to be superconducting with a transition temperature of about 25 K. Film deposited from a MgB2 sintered pellet target in ultra high vacuum conditions showed poor metallic or weak semiconducting behavior and they became superconducting only after an ex-situ annealing in Mg vapor atmosphere. Up to now, no difference in the superconducting properties of the films obtained by these two procedures has been evidenced.

cond-mat.supr-con↗

arXiv1997

The Crossover beteween Aslamazov-Larkin and Short Wavelength Fluctuations Regimes in HTS Conductivity Experiments

We present paraconductivity (AL) measurements in three different high temperature superconductors: a melt textured $YBa_2Cu_3O_7$ sample, a $Bi_2Sr_2CaCu_2O_8$ epitaxial thin film and a highly textured $Bi_2Sr_2Ca_2Cu_3O_{10}$ tape. The crossovers between different temperature regimes in excess conductivity have been analysed. The Lawrence-Doniach (LD) crossover, which separates the 2D and 3D regimes, shifts from lower to higher temperatures as the compound anisotropy decreases. Once the LD crossover is overcome, the fluctuation conductivity of the three compounds shows the same universal behaviour: for $ε=\ln T/T_c > 0.23$ all the curves bend down according to the $1/ε^3$ law. This asymptotic behaviour was theoretically predicted previously for the high temperature region where the short wavelength fluctuations (SWF) become important.

cond-mat↗