arXiv subjects

M. Rudolph

Publications and source records attributed to M. Rudolph.

13 recordsLinked to original sources

arXiv2019

Simultaneous observation of high order multiple quantum coherences at ultralow magnetic fields

We present a method for the simultaneous observation of heteronuclear multi-quantum coherences (up to the 3rd order), which give an additional degree of freedom for ultralow magnetic field (ULF) MR experiments, where the chemical shift is negligible. The nonequilibrium spin state is generated by Signal Amplification By Reversible Exchange (SABRE) and detected at ULF with SQUID-based NMR. We compare the results obtained by the heteronuclei Correlated SpectroscopY (COSY) with a Flip Angle FOurier Series (FAFOS) method. COSY allows a quantitative analysis of homo- and heteronuclei quantum coherences.

quant-ph↗

arXiv2019

Quantum dots with split enhancement gate tunnel barrier control

We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the reservoir, is observed in all devices, and is expected to play a role in the sizable tuning orthogonality of the split enhancement gate structure. The all-silicon process is expected to minimize strain gradients from electrode thermal mismatch, while the single gate layer should avoid issues related to overlayers (e.g., additional dielectric charge noise) and help improve yield. Finally, reservoir gate control of the tunnel barrier has implications for initialization, manipulation and readout schemes in multi-quantum dot architectures.

cond-mat.mes-hall↗

arXiv2019

Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures

High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 μW whereas the power of the AC-HBT ranges from 1 to 20 μW. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/$\sqrt{\textrm{Hz}}$ range. The charge sensitivity for the CB-HBT and AC-HBT is 330 μe/$\sqrt{\textrm{Hz}}$ and 400 μe/$\sqrt{\textrm{Hz}}$, respectively. For the single-shot readout performed, less than 10 μs is required for both circuits to achieve bit error rates below $10^{-3}$, which is a putative threshold for quantum error correction.

cond-mat.mes-hall↗

arXiv2017

Coupling MOS Quantum Dot and Phosphorus Donor Qubit Systems

Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.

cond-mat.mes-hall↗

arXiv2014

Imaging and registration of buried atomic-precision donor devices using scanning capacitance microscopy

We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical challenge in completing atomic-precision nanoelectronic devices is to accurately align mesoscopic metal contacts to the STM defined nanostructures. Utilizing the SCMs ability to image buried dopant nanostructures, we have developed a technique by which we are able to position metal electrodes on the surface to form contacts to underlying STM fabricated donor nanostructures with a measured accuracy of 300 nm. Low temperature (T=4K) transport measurements confirm successful placement of the contacts to the donor nanostructures.

cond-mat.mtrl-sci↗

arXiv2014

Probing limits of STM field emission patterned Si:P $δ$-doped devices

Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in precision, achieved by operating the STM in the conventional tunneling mode, typically utilizes very slow ($\sim\!10^2~\mathrm{nm^2/s}$) patterning speeds. By contrast, using the STM in a high voltage ($>10~\mathrm{V}$) field emission mode, patterning speeds can be increased by orders of magnitude to $\gtrsim\!10^4~\mathrm{nm^2/s}$. We show that the rapid patterning negligibly affects the functionality of relatively large micron-sized features, which act as contacting pads on these devices. For nanoscale structures, we show that the resulting transport is consistent with the donor incorporation chemistry enhancing the device definition to a scale of $10~\mathrm{nm}$ even though the pattering spot size is $40~\mathrm{nm}$.

cond-mat.mes-hall↗

arXiv2013

Trapping of ultra cold atoms in a 3He/4He dilution refrigerator

We describe the preparation of ultra cold atomic clouds in a dilution refrigerator. The closed cycle 3He/4He cryostat was custom made to provide optical access for laser cooling, optical manipulation and detection of atoms. We show that the cryostat meets the requirements for cold atom experiments, specifically in terms of operating a magneto-optical trap, magnetic traps and magnetic transport under ultra high vacuum conditions. The presented system is a step towards the creation of a quantum hybrid system combining ultra cold atoms and solid state quantum devices.

physics.atom-ph↗

arXiv2012

Direct current superconducting quantum interferometers with asymmetric shunt resistors

We have investigated asymmetrically shunted Nb/Al-AlO$_x$/Nb direct current (dc) superconducting quantum interference devices (SQUIDs). While keeping the total resistance $R$ identical to a comparable symmetric SQUID with $R^{-1} = R_1^{-1} + R_2^{-1}$, we shunted only one of the two Josephson junctions with $R = R_{1,2}/2$. Simulations predict that the optimum energy resolution $ε$ and thus also the noise performance of such an asymmetric SQUID can be 3--4 times better than that of its symmetric counterpart. Experiments at a temperature of 4.2\,K yielded $ε\approx 32\,\hbar$ for an asymmetric SQUID with an inductance of $22\,\rm{pH}$. For a comparable symmetric device $ε= 110\,\hbar$ was achieved, confirming our simulation results.

cond-mat.supr-con↗

arXiv2007

Simulation of networks of spiking neurons: A review of tools and strategies

We review different aspects of the simulation of spiking neural networks. We start by reviewing the different types of simulation strategies and algorithms that are currently implemented. We next review the precision of those simulation strategies, in particular in cases where plasticity depends on the exact timing of the spikes. We overview different simulators and simulation environments presently available (restricted to those freely available, open source and documented). For each simulation tool, its advantages and pitfalls are reviewed, with an aim to allow the reader to identify which simulator is appropriate for a given task. Finally, we provide a series of benchmark simulations of different types of networks of spiking neurons, including Hodgkin-Huxley type, integrate-and-fire models, interacting with current-based or conductance-based synapses, using clock-driven or event-driven integration strategies. The same set of models are implemented on the different simulators, and the codes are made available. The ultimate goal of this review is to provide a resource to facilitate identifying the appropriate integration strategy and simulation tool to use for a given modeling problem related to spiking neural networks.

q-bio.NC↗

arXiv1999

Towards an Effective Field Theory of QED

A procedure for reducing the functional integral of QED to an integral over bosonic gauge invariant fields is presented. Next, a certain averaging method for this integral, giving a tractable effective quantum field theory, is proposed. Finally, the current-current propagator and the chiral anomaly are calculated within this new formulation. These results are part of our programme of analyzing gauge theories with fermions in terms of local gauge invariants.

hep-th↗

arXiv1998

String Theory and Beyond

This is the written version of a short talk given at the University of Leipzig in December 1998. It reviews some general aspects of string theory from the viewpoint of the search for an unifying theory. Here, special emphasis lies on the motivation to consider string theory not only as the leading candidate for the unification of gravity and the other fundamental forces of nature, but also as a possible step towards a new understanding of nature and its description within the framework of physical models. Without going into details, some recent developments, including duality symmetries and the appearance of $M$--theory, are reviewed.

hep-th↗

arXiv1997

Gauge Invariant Formulation and Bosonisation of the Schwinger Model

The functional integral of the massless Schwinger model in $(1+1)$ dimensions is reduced to an integral in terms of local gauge invariant quantities. It turns out that this approach leads to a natural bosonisation scheme, yielding, in particular the famous `bosonisation rule'' and giving some deeper insight into the nature of the bosonisation phenomenon. As an application, the chiral anomaly is calculated within this formulation.

hep-th↗

arXiv1996

Effective Bosonic Degrees of Freedom for One-Flavour Chromodynamics

We apply an earlier formulated programme for quantization of nonabelian gauge theories to one-flavour chromodynamics. This programme consists in a complete reformulation of the functional integral in terms of gauge invariant quantities. For the model under consideration two types of gauge invariants occur -- quantities, which are bilinear in quarks and antiquarks (mesons) and a matrix-valued covector field, which is bilinear in quarks, antiquarks and their covariant derivatives. This covector field is linear in the original gauge potential, and can be, therefore, considered as the gauge potential ``dressed'' in a gauge invariant way with matter. Thus, we get a complete bosonization of the theory. The strong interaction is described by a highly non-linear effective action obtained after integrating out quarks and gluons from the functional integral. All constructions are done consequently on the quantum level, where quarks and antiquarks are anticommuting objects. Our quantization procedure circumvents the Gribov ambiguity.

hep-th↗