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arXiv · 1410.4793

Imaging and registration of buried atomic-precision donor devices using scanning capacitance microscopy

E. Bussmann·M. Rudolph·G. S. Subramania·S. Misra·S. M. Carr·E. Langlois·J. Dominguez·T. Pluym·M. P. Lilly·M. S. Carroll
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Abstract

We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical challenge in completing atomic-precision nanoelectronic devices is to accurately align mesoscopic metal contacts to the STM defined nanostructures. Utilizing the SCMs ability to image buried dopant nanostructures, we have developed a technique by which we are able to position metal electrodes on the surface to form contacts to underlying STM fabricated donor nanostructures with a measured accuracy of 300 nm. Low temperature (T=4K) transport measurements confirm successful placement of the contacts to the donor nanostructures.

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E. Bussmann, M. Rudolph, G. S. Subramania, S. Misra, S. M. Carr, E. Langlois, J. Dominguez, T. Pluym, M. P. Lilly, M. S. Carroll. 2014-10-17. Imaging and registration of buried atomic-precision donor devices using scanning capacitance microscopy. https://arxiv.org/abs/1410.4793

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